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Toshiba Semiconductor and Storage TK11S10N1L,LXHQ
- Part No.:
- TK11S10N1L,LXHQ
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
TK11S10N1L,LXHQ.pdf
- Description:
- MOSFET N-CH 100V 11A DPAK
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
TK11S10N1L,LXHQ from Toshiba Electronic Devices & Storage Corporation is an AEC-Q101-qualified silicon N-channel power MOSFET in U-MOSⅧ-H process, designed for high-reliability automotive switching. It delivers RDS(ON) = 23 mΩ (typ.) at VGS = 10 V, supports 100 V drain-source voltage, and handles 11 A DC drain current with DPAK+ package thermal resistance of 2.3 °C/W - enabling robust motor driver and DC-DC regulator designs.
For engineers reviewing the TK11S10N1L,LXHQ datasheet, TK11S10N1L,LXHQ pinout, TK11S10N1L,LXHQ application, or TK11S10N1L,LXHQ equivalent, key selection considerations include its AEC-Q101 qualification, low on-resistance at 4.5 V gate drive, single-pulse avalanche energy rating of 33.8 mJ, and guaranteed turn-off dVDS/dt ruggedness of 8.4 V/ns for noisy automotive environments.
Technical Context
This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate structure to achieve enhanced cell density and reduced specific on-resistance. Its enhancement-mode operation (Vth = 1.5–2.5 V) ensures reliable gate control with standard logic-level drivers, while the integrated body diode supports synchronous rectification in buck converters.
The device features optimized gate charge characteristics (Qg = 15 nC typ., Qgd = 4 nC typ.) for fast switching with minimal Miller-induced oscillation. Its safe operating area (SOA) is defined up to Tch = 175 °C, and it meets AEC-Q101 stress test requirements including HTRB, HAST, and temperature cycling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - supports 48 V automotive bus systems with margin against load-dump transients |
| RDS(ON) @ VGS = 10 V | 23 mΩ (typ.) - enables <1.3 W conduction loss at 7.5 A, reducing heatsink requirements |
| ID (DC) | 11 A - rated for continuous motor phase current in 12 V/24 V BLDC drivers |
| EAS | 33.8 mJ - withstands inductive energy during hard-switching events without failure |
| dVDS/dt ruggedness | 8.4 V/ns - prevents false turn-on in high-noise engine control modules |
| Qg | 15 nC (typ.) - allows efficient gate driving with ≤1 W peak power using 5 V logic-level drivers |
| Rth(ch-c) | 2.3 °C/W - enables 65 W power dissipation with ≤150 °C case temperature rise |
Pinout & Package
TK11S10N1L,LXHQ uses the DPAK+ (TOSHIBA 2-7M1A) surface-mount package with exposed drain pad for thermal and electrical performance. The drain terminal serves as the heatsink interface, requiring direct PCB copper pour connection for optimal thermal management.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1: Gate | Control input | Accepts 0–10 V logic-level signals; threshold range 1.5–2.5 V ensures compatibility with 3.3 V and 5 V microcontrollers |
| 2: Drain (heatsink) | High-side power path / thermal interface | Exposed metal pad must be soldered to ≥100 mm² copper area for Rth(ch-c) = 2.3 °C/W performance |
| 3: Source | Power return / reference node | Serves as common return for gate drive and load current; requires low-inductance layout to minimize switching noise |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive underhood applications per stress test requirements including HTGB, HTRB, and TC |
| Low RDS(ON) at 4.5 V | 31 mΩ (typ.) - enables full-load operation with 3.3 V GPIO or automotive CAN/LIN transceiver outputs |
| Enhancement-mode Vth | 1.5–2.5 V - ensures clean turn-on without floating-gate risk in unpowered systems |
| Single-pulse avalanche rating | 33.8 mJ - eliminates need for external snubbers in flyback and boost converter primary switches |
| Low Qgd/Qg ratio | 4/15 nC = 0.27 - reduces Miller plateau duration and improves EMI profile during hard switching |
Applications
| Automotive Body Control Module | 12 V DC-DC Synchronous Buck Converter |
|---|---|
Use Scenario: Driving solenoids, relays, and LED arrays in door modules and lighting control units. IC Role / Device Role / Timing Role: High-side switch controlling 12 V loads with PWM dimming and diagnostic feedback. Use Value: AEC-Q101 qualification ensures reliability over 15-year vehicle life; 23 mΩ RDS(ON) limits self-heating during 100% duty-cycle operation. |
Use Scenario: High-efficiency step-down conversion from 12 V battery to 3.3 V/5 V for infotainment and ADAS sensors. IC Role / Device Role / Timing Role: Synchronous rectifier in continuous conduction mode (CCM), replacing Schottky diode. Use Value: Low Qgd and 31 mΩ RDS(ON) at 4.5 V enable >92% efficiency at 5 A output with minimal thermal derating. |
| Electric Power Steering (EPS) Motor Driver | Industrial 24 V Brushless DC Motor Controller |
Use Scenario: Half-bridge phase leg in 3-phase inverter for EPS assist motor (≤500 W). IC Role / Device Role / Timing Role: Low-side switch handling bidirectional regenerative current during torque reversal. Use Value: 8.4 V/ns dVDS/dt ruggedness prevents shoot-through during fast commutation; 11 A DC rating supports peak assist currents. |
Use Scenario: Phase switching in factory automation motors operating in harsh ambient temperatures (−40 to 125 °C). IC Role / Device Role / Timing Role: Power stage switch in field-oriented control (FOC) inverters with isolated gate drivers. Use Value: 175 °C channel temperature limit and 2.3 °C/W Rth(ch-c) allow sustained operation at 85 °C ambient without forced cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL10DN10LH-1 | 100 V, 10 A, RDS(ON) = 25 mΩ @ 10 V; DPAK package; AEC-Q101 qualified | Lower ID rating and higher RDS(ON) reduce conduction margin in 11 A motor phases | Preferred where cost sensitivity outweighs 0.2 A current headroom and 2 mΩ RDS(ON) penalty |
| IXTP10N10P | 100 V, 10 A, RDS(ON) = 220 mΩ @ 10 V; TO-220 package; not AEC-Q101 qualified | Larger package and absence of automotive qualification restrict use to industrial non-safety-critical systems | Selected only when through-hole mounting and legacy footprint compatibility are mandatory |
Compared with STL10DN10LH-1 and IXTP10N10P, TK11S10N1L,LXHQ provides superior current capability (11 A vs. 10 A), lower on-resistance (23 mΩ vs. 25/220 mΩ), and automotive-grade reliability - making it the optimal choice for space-constrained, thermally demanding automotive power stages where conduction loss and SOA margins are critical.
Availability
TK11S10N1L,LXHQ is available at Aetrix Electronics and suitable for automotive body control modules, 12 V DC-DC synchronous buck converters, and electric power steering motor drivers requiring stable component supply across extended production lifecycles.
Supply support for TK11S10N1L,LXHQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs high-reliability semiconductor components for automotive, industrial, and consumer applications, with emphasis on power efficiency and functional safety compliance.
The TK11S10N1L,LXHQ belongs to Toshiba's U-MOSⅧ-H automotive MOSFET product line, engineered specifically for high-current, high-temperature switching in engine control, chassis, and electrification systems.
FAQ
What is the maximum continuous drain current rating for TK11S10N1L,LXHQ?
The TK11S10N1L,LXHQ has a DC drain current rating of 11 A at Tc = 25 °C. This rating assumes proper PCB thermal design with the drain pad soldered to ≥100 mm² copper area. At elevated case temperatures, current must be derated per the Safe Operating Area curve in the datasheet - for example, to ~7.5 A at Tc = 100 °C.
Is TK11S10N1L,LXHQ suitable for 48 V automotive applications?
Yes, TK11S10N1L,LXHQ is rated for VDSS = 100 V, providing sufficient margin for 48 V nominal systems subject to ISO 7637-2 load-dump transients (up to 75 V). Its AEC-Q101 qualification, 175 °C channel temperature limit, and 8.4 V/ns dVDS/dt ruggedness make it appropriate for 48 V mild-hybrid and onboard charger auxiliary power stages.
Does TK11S10N1L,LXHQ support logic-level gate drive?
Yes, TK11S10N1L,LXHQ is enhancement-mode with Vth = 1.5–2.5 V and specifies RDS(ON) = 31 mΩ (typ.) at VGS = 4.5 V - confirming full enhancement using standard 3.3 V or 5 V microcontroller GPIOs. No level-shifting circuitry is required for compatible gate drivers.
What is the thermal resistance from channel to case for TK11S10N1L,LXHQ?
The channel-to-case thermal resistance (Rth(ch-c)) of TK11S10N1L,LXHQ is 2.3 °C/W (max), measured with the drain pad fully soldered to a large copper plane. This value enables 65 W power dissipation with a 150 °C temperature rise from case to channel - critical for calculating junction temperature in automotive underhood environments.
How does TK11S10N1L,LXHQ handle avalanche energy during inductive switching?
TK11S10N1L,LXHQ is characterized for single-pulse avalanche energy (EAS) of 33.8 mJ at Tch = 25 °C. This rating applies to unclamped inductive switching events such as relay coil de-energization or motor phase commutation, allowing the device to absorb transient energy without failure - eliminating need for external clamping diodes in many designs.
TK11S10N1L,LXHQ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- U-MOSVIII-H
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 28mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 850 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 65W (Tc)
- Operating Temperature:
- 175°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK+
TK11S10N1L,LXHQ FAQ
1.How can I place an order for TK11S10N1L,LXHQ through Aetrix?
Please submit a Request for Quotation (RFQ) for TK11S10N1L,LXHQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TK11S10N1L,LXHQ reliable?
The price and inventory of TK11S10N1L,LXHQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK11S10N1L,LXHQ is usually 5 days.
3.What payment methods are accepted for TK11S10N1L,LXHQ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK11S10N1L,LXHQ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TK11S10N1L,LXHQ?
TK11S10N1L,LXHQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TK11S10N1L,LXHQ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TK11S10N1L,LXHQ?
For technical support, including TK11S10N1L,LXHQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK11S10N1L,LXHQ requirements.
6.How does Aetrix verify that TK11S10N1L,LXHQ is sourced from the original manufacturer or authorized distributors?
All TK11S10N1L,LXHQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK11S10N1L,LXHQ meets industry standards.
7.What is the process for return or replacement of TK11S10N1L,LXHQ?
All TK11S10N1L,LXHQ units undergo pre-shipment inspection (PSI). If there is an issue with TK11S10N1L,LXHQ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TK11S10N1L,LXHQ part is unused and in its original packaging.
Return procedure for TK11S10N1L,LXHQ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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