Toshiba Semiconductor and Storage TK12A45D(STA4,Q,M)

Overview

TK12A45D(STA4,Q,M) from Toshiba is a silicon N-channel power MOSFET in the π-MOSⅦ family, designed for high-efficiency switching regulator applications. It features 450 V drain-source breakdown voltage (V_(BR)DSS), 12 A continuous drain current (I_D), and low R_DS(ON) of 0.43 Ω (typ.) at V_GS = 10 V - enabling compact, thermally efficient DC-DC converters in industrial power supplies.

For engineers reviewing the TK12A45D(STA4,Q,M) datasheet, TK12A45D(STA4,Q,M) pinout, TK12A45D(STA4,Q,M) application, or TK12A45D(STA4,Q,M) equivalent, key selection criteria include avalanche ruggedness (E_AS = 292 mJ), gate charge (Q_g = 24 nC), thermal resistance (R_th(ch-c) = 2.78 °C/W), and RoHS-compliant SC-67 package compatibility with through-hole mounting.

Technical Context

This MOSFET employs a planar vertical structure optimized for high-voltage switching with enhancement-mode operation (V_th = 2.0–4.0 V). Its low output capacitance (C_oss = 120 pF at V_DS = 25 V) and fast switching times (t_r = 25 ns, t_f = 12 ns) support high-frequency PWM control in flyback and forward converters.

The integrated body diode exhibits V_DSF = −1.7 V at I_DR = 12 A and t_rr = 1300 ns, making it suitable for freewheeling paths where controlled reverse recovery is required. Avalanche-rated design (I_AR = 12 A, E_AS = 292 mJ) enables robust operation under inductive load transients without external snubbers.

Key Specifications

Pinout & Package

TK12A45D(STA4,Q,M) uses the JEITA SC-67 (Toshiba 2-10U1B) through-hole package - a variant of TO-220AB with isolated tab, 1.7 g mass, and standardized 2.54 mm lead pitch. Thermal performance is optimized for PCB-mounted heatsink attachment via the drain-connected metal tab.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP12NK45Z and IRF840APBF, TK12A45D(STA4,Q,M) offers the lowest R_DS(ON) and highest avalanche energy in a through-hole SC-67 package - delivering superior thermal efficiency and transient robustness for industrial SMPS where layout stability and reliability under surge conditions are critical.

Availability

TK12A45D(STA4,Q,M) is available at Aetrix Electronics and suitable for industrial switching power supplies, AC-DC adapters for office equipment, uninterruptible power supplies (UPS), and LED driver power stages requiring stable component supply and long-term manufacturability.

Supply support for TK12A45D(STA4,Q,M) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a global semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with decades of expertise in high-reliability discrete components.

The π-MOSⅦ series - including TK12A45D(STA4,Q,M) - was engineered specifically for high-efficiency, high-voltage switching regulators demanding low R_DS(ON), fast switching, and guaranteed avalanche capability in industrial and infrastructure power systems.

FAQ

What is the maximum continuous drain current for TK12A45D(STA4,Q,M) at Tc = 25°C?

The TK12A45D(STA4,Q,M) supports a maximum continuous drain current (I_D) of 12 A when case temperature is maintained at 25°C. This rating assumes proper heatsinking to limit channel temperature to ≤150°C per the absolute maximum ratings table. At elevated case temperatures, derating is required - e.g., ~8 A at Tc = 100°C - based on the linear thermal derating curve defined in the datasheet.

Does TK12A45D(STA4,Q,M) have an avalanche-rated design, and what is its single-pulse energy capability?

Yes, TK12A45D(STA4,Q,M) is fully avalanche-rated with a specified single-pulse avalanche energy (E_AS) of 292 mJ under the test condition V_DD = 90 V, L = 3.38 mH, R_G = 25 Ω, and I_AR = 12 A. This rating is validated per JEDEC standards and enables reliable operation during inductive switching transients without external protection circuitry.

What package type does TK12A45D(STA4,Q,M) use, and is the drain electrically connected to the tab?

TK12A45D(STA4,Q,M) uses the JEITA SC-67 package (Toshiba designation 2-10U1B), a through-hole variant compatible with TO-220 mounting. The drain terminal is directly connected to the metal tab - confirmed by internal connection diagram and thermal resistance specification R_th(ch-c) = 2.78 °C/W - requiring electrical isolation if mounted to a grounded heatsink.

What is the gate threshold voltage range for TK12A45D(STA4,Q,M), and how does it affect driver selection?

The gate threshold voltage (V_th) for TK12A45D(STA4,Q,M) is specified as 2.0–4.0 V at V_DS = 10 V and I_D = 1 mA. This enhancement-mode range ensures full turn-on with standard 5 V or 10 V gate drivers, while providing noise margin against spurious turn-on. For robust operation, gate drive should exceed 10 V to achieve rated R_DS(ON) and minimize switching losses.

Is TK12A45D(STA4,Q,M) RoHS compliant, and how is compliance indicated on the device marking?

Yes, TK12A45D(STA4,Q,M) is RoHS compliant, as confirmed by Toshiba's marking convention [[G]]/RoHS COMPATIBLE printed on the device body. This indicates conformity with EU Directive 2011/65/EU, including restrictions on lead, mercury, cadmium, hexavalent chromium, PBB, and PBDE. Full compliance documentation is available from Toshiba upon request.