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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK12A50D(STA4,Q,M)

Name: TK12A50D(STA4,Q,M)
Brand: Toshiba Semiconductor and Storage
SKU: TK12A50D(STA4,Q,M)
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK12A50D(STA4,Q,M)

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: TK12A50D(STA4,Q,M).pdf

Description:: MOSFET N-CH 500V 12A TO220SIS

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Product details

Overview

TK12A50D(STA4,Q,M) from Toshiba is a silicon N-channel power MOSFET in the π-MOSⅦ family, designed for high-voltage switching regulator applications. It features 500 V drain-source breakdown voltage (V_(BR)DSS), 12 A continuous drain current (I_D), and low on-resistance of 0.45 Ω (typ.) at V_GS = 10 V - enabling efficient DC-DC conversion in industrial SMPS and AC-DC adapters.

For engineers reviewing the TK12A50D(STA4,Q,M) datasheet, TK12A50D(STA4,Q,M) pinout, TK12A50D(STA4,Q,M) application, or TK12A50D(STA4,Q,M) equivalent, key selection criteria include avalanche ruggedness (E_AS = 364 mJ), gate threshold voltage range (2.0–4.0 V), thermal resistance (R_th(ch-c) = 2.78 °C/W), and RoHS-compliant SC-67 package compatibility with through-hole mounting.

Technical Context

This MOSFET employs a planar vertical structure optimized for high-voltage blocking and fast switching in hard-switched topologies. Its enhancement-mode operation, low R_DS(ON), and high |Y_fs| (6.0 S typ.) support stable gate drive and high transconductance in flyback and forward converter primary-side switches.

Designed for unidirectional power flow, it integrates an intrinsic body diode with reverse recovery time (t_rr) of 1300 ns and Q_rr of 12 μC - critical for managing commutation losses in discontinuous conduction mode (DCM) operation. The device is rated for channel temperature up to 150°C and supports single-pulse avalanche energy handling per JEITA SC-67 mechanical standard.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	500 V - supports input voltages up to 400 V DC in offline SMPS without derating
R_DS(ON)	0.45 Ω (typ.) at V_GS = 10 V - reduces conduction loss in 12 A continuous load paths
I_D (continuous)	12 A - enables use in medium-power converters up to ~600 W with proper heatsinking
E_AS	364 mJ - withstands single-pulse inductive energy during overcurrent or short-circuit events
Q_g	25 nC - determines gate drive power requirement and switching speed in 100 kHz-class designs
R_th(ch-c)	2.78 °C/W - allows direct thermal coupling to heatsink for T_ch ≤ 150°C at P_D = 45 W
V_th	2.0–4.0 V - ensures reliable turn-on with standard 5 V or 12 V gate drivers

Pinout & Package

TK12A50D(STA4,Q,M) uses the JEITA SC-67 (Toshiba 2-10U1B) through-hole package - a 3-pin, insulated case design with 1.7 g typical weight and creepage/clearance optimized for ≥500 V isolation. Mounting requires soldering leads 1 (Gate), 2 (Drain), and 3 (Source) to PCB pads per Toshiba's mechanical drawing.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives voltage-controlled signal to modulate channel conductivity; requires <±1 μA leakage per datasheet
2 (Drain)	High-side power output	Connects to primary winding or HV rail; carries full switched current and blocks 500 V
3 (Source)	Reference/return path	Serves as common return for gate drive and current sensing; tied to power ground in low-side configurations

Key Features

Feature	Design Value
π-MOSⅦ process technology	Enables lower R_DS(ON) × Q_g figure-of-merit versus prior generations, improving efficiency in 50–200 kHz SMPS
Single-pulse avalanche rating	Validated E_AS = 364 mJ at V_DD = 90 V, L = 4.3 mH - supports robustness in non-clamped inductive switching
Intrinsic body diode	V_DSF = −1.7 V at I_DR = 12 A - provides freewheeling path in flyback/forward converters without external diode
Electrostatic-sensitive handling	Requires ESD-safe protocols (IEC 61340-5-1); gate oxide integrity verified per JEDEC JESD22-A114
RoHS-compliant marking	Underlined Lot No. indicates [[G]]/RoHS COMPATIBLE - meets EU Directive 2011/65/EU substance restrictions

Applications

AC-DC Adapters	Flyback Converters
Use Scenario: 90–264 V AC input, 12–24 V DC output, 30–60 W isolated power supply for consumer electronics. IC Role / Device Role / Timing Role: Primary-side high-voltage switch in self-oscillating or PWM-controlled flyback topology. Use Value: Low R_DS(ON) minimizes conduction loss at 50–100 kHz switching; avalanche rating handles transformer leakage energy.	Use Scenario: Universal-input offline flyback for industrial sensors and PLC I/O modules requiring reinforced isolation. IC Role / Device Role / Timing Role: Main power switch synchronized to controller IC (e.g., UC384x) with current-mode feedback. Use Value: 500 V V_DSS eliminates need for snubber networks in 230 V AC designs; 12 A I_D supports peak power surges.
Forward Converters	DC-DC Industrial SMPS
Use Scenario: 48 V input telecom rectifier feeding 5/3.3 V logic rails in base station power systems. IC Role / Device Role / Timing Role: Primary-side switch operating in continuous conduction mode (CCM) with reset winding. Use Value: High \|Y_fs\| ensures linear gain for precise current sensing; low C_iss (1350 pF) eases gate driver selection.	Use Scenario: 300–400 V DC bus step-down for motor control gate drivers or servo amplifier auxiliary supplies. IC Role / Device Role / Timing Role: High-side switch in half-bridge or buck-derived topology with isolated gate drive. Use Value: R_th(ch-c) = 2.78 °C/W enables compact heatsink integration; 150°C T_ch rating supports high ambient environments.

AC-DC Adapters

Flyback Converters

Use Scenario: 90–264 V AC input, 12–24 V DC output, 30–60 W isolated power supply for consumer electronics.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch in self-oscillating or PWM-controlled flyback topology.

Use Value: Low R_DS(ON) minimizes conduction loss at 50–100 kHz switching; avalanche rating handles transformer leakage energy.

Use Scenario: Universal-input offline flyback for industrial sensors and PLC I/O modules requiring reinforced isolation.

IC Role / Device Role / Timing Role: Main power switch synchronized to controller IC (e.g., UC384x) with current-mode feedback.

Use Value: 500 V V_DSS eliminates need for snubber networks in 230 V AC designs; 12 A I_D supports peak power surges.

Forward Converters

DC-DC Industrial SMPS

Use Scenario: 48 V input telecom rectifier feeding 5/3.3 V logic rails in base station power systems.

IC Role / Device Role / Timing Role: Primary-side switch operating in continuous conduction mode (CCM) with reset winding.

Use Value: High |Y_fs| ensures linear gain for precise current sensing; low C_iss (1350 pF) eases gate driver selection.

Use Scenario: 300–400 V DC bus step-down for motor control gate drivers or servo amplifier auxiliary supplies.

IC Role / Device Role / Timing Role: High-side switch in half-bridge or buck-derived topology with isolated gate drive.

Use Value: R_th(ch-c) = 2.78 °C/W enables compact heatsink integration; 150°C T_ch rating supports high ambient environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NK50ZFP	500 V V_DSS, 12 A I_D, R_DS(ON) = 0.52 Ω (max), Zener-protected gate, TO-220FP package	Higher R_DS(ON) tolerance and integrated gate protection reduce layout sensitivity but increase conduction loss marginally	Preferred where gate robustness outweighs minimal efficiency gain; not pin-compatible due to different leadframe geometry
IRFBC40APBF	500 V V_DSS, 10 A I_D, R_DS(ON) = 0.55 Ω (max), TO-220AB package, no avalanche rating specified	Lacks published E_AS data and has lower current rating - limits use in high-reliability or surge-prone designs	Acceptable for cost-sensitive, low-stress 50–60 W applications; requires external gate clamping and thermal derating

Compared with STP12NK50ZFP and IRFBC40APBF, TK12A50D(STA4,Q,M) offers tighter R_DS(ON) control (0.45 Ω typ.), validated avalanche capability, and SC-67 package insulation - making it preferable for space-constrained, high-reliability offline SMPS where thermal management and transient resilience are prioritized.

Availability

TK12A50D(STA4,Q,M) is available at Aetrix Electronics and suitable for AC-DC adapters, flyback converters, and industrial DC-DC SMPS requiring stable component supply, long-lifecycle assurance, and RoHS-compliant through-hole power semiconductors.

Supply support for TK12A50D(STA4,Q,M) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, efficiency, and industrial-grade performance.

The TK12A50D(STA4,Q,M) belongs to Toshiba's π-MOSⅦ high-voltage N-channel MOSFET product line, engineered specifically for energy-efficient switching regulators in industrial, consumer, and infrastructure power supplies.

FAQ

What is the maximum continuous drain current for TK12A50D(STA4,Q,M) at 25°C case temperature?

The TK12A50D(STA4,Q,M) supports a maximum continuous drain current (I_D) of 12 A at T_c = 25°C, as specified in its Absolute Maximum Ratings table. This rating assumes proper heatsinking to maintain channel temperature ≤150°C and accounts for pulse conditions defined in Note 1. Derating is required above 25°C case temperature per the PD–Tc curve.

Does TK12A50D(STA4,Q,M) have a specified avalanche energy rating?

Yes, TK12A50D(STA4,Q,M) specifies a single-pulse avalanche energy (E_AS) of 364 mJ under test conditions of V_DD = 90 V, L = 4.3 mH, R_G = 25 Ω, and I_AR = 12 A. This validated rating confirms its ability to absorb inductive switching energy without failure - a key reliability parameter for flyback and forward converter designs.

What package type does TK12A50D(STA4,Q,M) use, and is it RoHS-compliant?

TK12A50D(STA4,Q,M) uses the JEITA SC-67 package (Toshiba designation 2-10U1B), a through-hole insulated case format. Per Toshiba's marking convention, underlined lot numbers indicate [[G]]/RoHS COMPATIBLE status, confirming compliance with EU Directive 2011/65/EU. The device contains no lead exceeding RoHS thresholds.

What is the gate threshold voltage range for TK12A50D(STA4,Q,M)?

The gate threshold voltage (V_th) for TK12A50D(STA4,Q,M) is specified as 2.0 V to 4.0 V at V_DS = 10 V and I_D = 1 mA. This range ensures reliable turn-on with standard 5 V logic-level gate drivers while maintaining sufficient noise margin against false triggering in electrically noisy environments.

Can TK12A50D(STA4,Q,M) be used in synchronous rectification applications?

No, TK12A50D(STA4,Q,M) is not optimized for synchronous rectification. Its body diode has relatively high forward voltage (V_DSF = −1.7 V at 12 A) and slow reverse recovery (t_rr = 1300 ns), resulting in excessive conduction and switching losses in secondary-side roles. It is intended exclusively for primary-side high-side switching in isolated topologies.

TK12A50D(STA4,Q,M) Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: π-MOSVII

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 520mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1350 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 45W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220SIS

TK12A50D(STA4,Q,M) FAQ

1.How can I place an order for TK12A50D(STA4,Q,M) through Aetrix?

Please submit a Request for Quotation (RFQ) for TK12A50D(STA4,Q,M) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK12A50D(STA4,Q,M) reliable?

The price and inventory of TK12A50D(STA4,Q,M) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK12A50D(STA4,Q,M) is usually 5 days.

3.What payment methods are accepted for TK12A50D(STA4,Q,M)?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK12A50D(STA4,Q,M) transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK12A50D(STA4,Q,M)?

TK12A50D(STA4,Q,M) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK12A50D(STA4,Q,M) order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK12A50D(STA4,Q,M)?

For technical support, including TK12A50D(STA4,Q,M) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK12A50D(STA4,Q,M) requirements.

6.How does Aetrix verify that TK12A50D(STA4,Q,M) is sourced from the original manufacturer or authorized distributors?

All TK12A50D(STA4,Q,M) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK12A50D(STA4,Q,M) meets industry standards.

7.What is the process for return or replacement of TK12A50D(STA4,Q,M)?

All TK12A50D(STA4,Q,M) units undergo pre-shipment inspection (PSI). If there is an issue with TK12A50D(STA4,Q,M), returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK12A50D(STA4,Q,M) part is unused and in its original packaging.

Return procedure for TK12A50D(STA4,Q,M):

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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