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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK12A53D(STA4,Q,M)

Name: TK12A53D(STA4,Q,M)
Brand: Toshiba Semiconductor and Storage
SKU: TK12A53D(STA4,Q,M)
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK12A53D(STA4,Q,M)

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: TK12A53D(STA4,Q,M).pdf

Description:: MOSFET N-CH 525V 12A TO220SIS

Quantity:: RFQ Add To RFQ list

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Inventory:2,379

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Product details

Overview

TK12A53D(STA4,Q,M) from TOSHIBA is a silicon N-channel power MOSFET designed for high-voltage switching regulator applications. It features 525 V drain-source breakdown voltage, 0.5 Ω typical R_DS(ON) at V_GS = 10 V and I_D = 6 A, 6.0 S typical forward transfer admittance, 12 A continuous drain current, and SC-67 (JEITA: SC-67 / Toshiba: 2-10U1B) package with isolated heatsink tab.

For engineers reviewing the TK12A53D(STA4,Q,M) datasheet, TK12A53D(STA4,Q,M) pinout, TK12A53D(STA4,Q,M) application, or TK12A53D(STA4,Q,M) equivalent, key selection criteria include avalanche ruggedness (378 mJ single-pulse), gate threshold range (2.0–4.0 V), thermal resistance (2.78 °C/W channel-to-case), integrated body diode performance (V_DSF = −1.7 V at 12 A), and RoHS-compliant marking per Toshiba's [[G]]/RoHS labeling convention.

Technical Context

This MOSFET employs π-MOSⅦ process technology optimized for high-voltage DC-DC conversion. Its enhancement-mode operation requires gate drive ≥2.0 V to initiate conduction, and it supports hard-switched topologies with verified unclamped inductive switching (UIS) capability up to 378 mJ at T_ch = 25°C.

The device integrates a fast-recovery body diode (t_rr = 1300 ns, Q_rr = 12 μC) suitable for synchronous rectification or freewheeling in flyback and forward converters. Thermal design must respect R_th(ch-c) = 2.78 °C/W and limit T_ch to 150°C under all operating conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	525 V - supports input rails up to 400 V DC in offline SMPS without derating
R_DS(ON)	0.50 Ω (typ.) - enables <1 W conduction loss at 6 A, critical for efficiency in 100–500 W converters
\|Y_fs\|	6.0 S (typ.) - high transconductance ensures strong gate control and fast turn-on under load
Q_g	25 nC - determines gate driver power requirement and switching speed trade-off
E_AS	378 mJ - validates robustness against inductive energy spikes during overcurrent or startup
t_rr	1300 ns - body diode recovery time impacts snubber design and EMI in discontinuous mode
R_th(ch-c)	2.78 °C/W - defines minimum heatsink thermal resistance needed to sustain 45 W dissipation

Pinout & Package

TK12A53D(STA4,Q,M) uses the SC-67 surface-mount package (Toshiba designation: 2-10U1B), featuring an isolated metal tab for direct heatsinking and mechanical stability in high-power layouts. The case is rated for 150°C channel temperature and weighs 1.7 g.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives voltage-controlled signal; threshold 2.0–4.0 V; max ±30 V rating prevents gate oxide damage
2 (Drain)	High-side power terminal	Connected to HV input or transformer primary; carries full load current and withstands 525 V transient
3 (Source)	Reference and return path	Serves as common node for gate drive reference and current sensing; tied to power ground in low-side configuration

Key Features

Feature	Design Value
π-MOSⅦ silicon process	Delivers optimized R_DS(ON) × Q_g figure-of-merit for high-frequency switching at >100 kHz
Unclamped inductive switching (UIS) rated	Validated 378 mJ single-pulse avalanche energy enables reliable operation without external clamping
Integrated fast-recovery body diode	12 A reverse current capability with 1300 ns t_rr reduces need for external diodes in flyback snubbers
Low IDSS leakage	≤10 μA at 525 V ensures minimal standby power loss in high-input-voltage standby circuits
RoHS-compliant marking	Underlined Lot No. indicates [[G]]/RoHS compatibility per EU Directive 2011/65/EU

Applications

AC-DC Adapter	Industrial DC-DC Converter
Use Scenario: 90–264 V AC input, 12–24 V output, 150 W open-frame adapter for industrial HMIs. IC Role / Device Role / Timing Role: Primary-side switching transistor in quasi-resonant flyback topology. Use Value: 525 V V_DSS and 378 mJ E_AS ensure margin against line surges and transformer leakage spikes without snubber redesign.	Use Scenario: 48 V input, 5 V/20 A output isolated converter for PLC backplane power. IC Role / Device Role / Timing Role: High-side switch in active-clamp forward converter operating at 250 kHz. Use Value: 0.5 Ω R_DS(ON) minimizes conduction loss at 12 A RMS, while 6.0 S \|Y_fs\| maintains stable gate drive under wide-load variation.
Telecom Rectifier Module	LED Driver Power Stage
Use Scenario: −48 V telecom system with 3 kW distributed power architecture using phase-shifted full-bridge. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier MOSFET in center-tapped configuration. Use Value: Integrated body diode with −1.7 V V_DSF and 12 μC Q_rr reduces reverse recovery loss and EMI vs. discrete Schottky solutions.	Use Scenario: 300 V DC bus LED streetlight driver with 150 W constant-current output. IC Role / Device Role / Timing Role: Main switch in boost PFC + LLC resonant dual-stage architecture. Use Value: 2.78 °C/W R_th(ch-c) allows direct mounting to aluminum extrusion heatsink, eliminating thermal interface material in cost-sensitive outdoor enclosures.

AC-DC Adapter

Industrial DC-DC Converter

Use Scenario: 90–264 V AC input, 12–24 V output, 150 W open-frame adapter for industrial HMIs.

IC Role / Device Role / Timing Role: Primary-side switching transistor in quasi-resonant flyback topology.

Use Value: 525 V V_DSS and 378 mJ E_AS ensure margin against line surges and transformer leakage spikes without snubber redesign.

Use Scenario: 48 V input, 5 V/20 A output isolated converter for PLC backplane power.

IC Role / Device Role / Timing Role: High-side switch in active-clamp forward converter operating at 250 kHz.

Use Value: 0.5 Ω R_DS(ON) minimizes conduction loss at 12 A RMS, while 6.0 S |Y_fs| maintains stable gate drive under wide-load variation.

Telecom Rectifier Module

LED Driver Power Stage

Use Scenario: −48 V telecom system with 3 kW distributed power architecture using phase-shifted full-bridge.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier MOSFET in center-tapped configuration.

Use Value: Integrated body diode with −1.7 V V_DSF and 12 μC Q_rr reduces reverse recovery loss and EMI vs. discrete Schottky solutions.

Use Scenario: 300 V DC bus LED streetlight driver with 150 W constant-current output.

IC Role / Device Role / Timing Role: Main switch in boost PFC + LLC resonant dual-stage architecture.

Use Value: 2.78 °C/W R_th(ch-c) allows direct mounting to aluminum extrusion heatsink, eliminating thermal interface material in cost-sensitive outdoor enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NK52ZFP	520 V V_DSS, 0.52 Ω R_DS(ON), TO-220FP package, no UIS rating published	Requires external avalanche protection circuitry in high-energy inductive loads	Prefer where cost sensitivity outweighs ruggedness requirements and PCB layout permits through-hole mounting
IXTH12N50L	500 V V_DSS, 0.55 Ω R_DS(ON), TO-247 package, 230 mJ E_AS (lower than TK12A53D's 378 mJ)	Limited surge margin in 277 V AC-fed systems with high transformer leakage inductance	Select when higher peak current (48 A pulsed) is prioritized over voltage headroom and avalanche endurance

Compared with STP12NK52ZFP and IXTH12N50L, TK12A53D(STA4,Q,M) offers superior voltage rating (525 V), highest UIS energy (378 mJ), and surface-mount SC-67 packaging-making it optimal for space-constrained, high-reliability offline SMPS where board area and surge immunity are critical.

Availability

TK12A53D(STA4,Q,M) is available at Aetrix Electronics and suitable for AC-DC adapters, industrial DC-DC converters, and telecom rectifier modules requiring stable component supply across extended product lifecycles.

Supply support for TK12A53D(STA4,Q,M) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, thermal performance, and industrial-grade robustness.

The TK12A53D(STA4,Q,M) belongs to Toshiba's π-MOSⅦ high-voltage power MOSFET family, engineered specifically for high-efficiency, high-reliability switching regulators in industrial, telecom, and lighting applications demanding tight thermal control and avalanche survivability.

FAQ

What is the maximum allowable gate-source voltage for TK12A53D(STA4,Q,M)?

The absolute maximum gate-source voltage for TK12A53D(STA4,Q,M) is ±30 V. Exceeding this rating risks irreversible gate oxide breakdown. In practice, gate drive should be limited to 10–15 V for optimal R_DS(ON) and safe switching. The device's V_th range of 2.0–4.0 V ensures reliable turn-on with standard logic-level or dedicated gate drivers. Always include gate resistor and clamping (e.g., Zener) in high-noise environments to protect TK12A53D(STA4,Q,M).

Does TK12A53D(STA4,Q,M) have an integrated body diode, and what are its key parameters?

Yes, TK12A53D(STA4,Q,M) includes a monolithic body diode with forward voltage V_DSF = −1.7 V at I_DR = 12 A and V_GS = 0 V. Its reverse recovery time t_rr is 1300 ns and reverse recovery charge Q_rr is 12 μC under specified test conditions. These values enable use in freewheeling and synchronous rectification roles without external diodes in many flyback and forward converters. The body diode characteristics are fully characterized in the TK12A53D(STA4,Q,M) datasheet Section "Source-Drain Ratings and Characteristics".

What thermal resistance values apply to TK12A53D(STA4,Q,M), and how do they affect heatsink selection?

TK12A53D(STA4,Q,M) has R_th(ch-c) = 2.78 °C/W (channel-to-case) and R_th(ch-a) = 62.5 °C/W (channel-to-ambient). For continuous 45 W dissipation, the case-to-ambient thermal path must limit total rise to ≤150°C − T_a; thus, a heatsink with ≤2.78 °C/W thermal resistance (plus interface resistance) is required when mounted to a large copper plane or extruded aluminum. The SC-67 package's isolated metal tab allows direct thermal attachment, making TK12A53D(STA4,Q,M) suitable for compact, high-power-density layouts.

Is TK12A53D(STA4,Q,M) suitable for avalanche-rated applications, and what is its rated energy?

Yes, TK12A53D(STA4,Q,M) is explicitly rated for unclamped inductive switching (UIS) with single-pulse avalanche energy E_AS = 378 mJ at V_DD = 90 V, L = 4.5 mH, R_G = 25 Ω, and I_AR = 12 A. This rating is validated per JEDEC standards and confirms robustness against transient overvoltage events in switching regulators. Repetitive avalanche energy is limited to 4.5 mJ per pulse. Designers must ensure channel temperature remains ≤150°C during avalanche events, as specified in the TK12A53D(STA4,Q,M) datasheet Absolute Maximum Ratings table.

How is RoHS compliance indicated on TK12A53D(STA4,Q,M) packaging and marking?

RoHS compliance for TK12A53D(STA4,Q,M) is indicated by an underlined Lot Number on the device marking (e.g., K12A53D), which denotes [[G]]/RoHS COMPATIBLE per Toshiba's labeling convention. Non-underlined markings indicate lead-containing versions. The device meets EU Directive 2011/65/EU requirements. Environmental documentation, including substance declarations and test reports, is available from Toshiba upon request and applies specifically to TK12A53D(STA4,Q,M) - not generic family-level data.

TK12A53D(STA4,Q,M) Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: π-MOSVII

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 525 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 580mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1350 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 45W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220SIS

TK12A53D(STA4,Q,M) FAQ

1.How can I place an order for TK12A53D(STA4,Q,M) through Aetrix?

Please submit a Request for Quotation (RFQ) for TK12A53D(STA4,Q,M) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK12A53D(STA4,Q,M) reliable?

The price and inventory of TK12A53D(STA4,Q,M) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK12A53D(STA4,Q,M) is usually 5 days.

3.What payment methods are accepted for TK12A53D(STA4,Q,M)?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK12A53D(STA4,Q,M) transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK12A53D(STA4,Q,M)?

TK12A53D(STA4,Q,M) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK12A53D(STA4,Q,M) order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK12A53D(STA4,Q,M)?

For technical support, including TK12A53D(STA4,Q,M) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK12A53D(STA4,Q,M) requirements.

6.How does Aetrix verify that TK12A53D(STA4,Q,M) is sourced from the original manufacturer or authorized distributors?

All TK12A53D(STA4,Q,M) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK12A53D(STA4,Q,M) meets industry standards.

7.What is the process for return or replacement of TK12A53D(STA4,Q,M)?

All TK12A53D(STA4,Q,M) units undergo pre-shipment inspection (PSI). If there is an issue with TK12A53D(STA4,Q,M), returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK12A53D(STA4,Q,M) part is unused and in its original packaging.

Return procedure for TK12A53D(STA4,Q,M):

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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