Toshiba Semiconductor and Storage TK12A80W,S4X

Overview

TK12A80W,S4X from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline power supplies. It features 800 V drain-source breakdown voltage, 0.38 Ω typical R_DS(ON) at V_GS = 10 V and I_D = 5.8 A, 11.5 A continuous drain current, and TO-220SIS package with isolated mounting. It is used in AC-DC adapters and industrial SMPS where high efficiency and avalanche ruggedness are required.

For engineers reviewing the TK12A80W,S4X datasheet, TK12A80W,S4X pinout, TK12A80W,S4X application, or TK12A80W,S4X equivalent, this page provides verified electrical specs, thermal performance data, gate charge characteristics, diode recovery behavior, and real-world selection guidance for high-voltage flyback and PFC stages.

Technical Context

This device implements Toshiba's DTMOS™ IV super-junction architecture to achieve low conduction loss while maintaining fast switching and high dv/dt immunity. Its 2.78 °C/W channel-to-case thermal resistance enables high-power operation with standard heatsinking, and its 358 mJ single-pulse avalanche energy rating supports robust operation under transient overvoltage conditions.

The TK12A80W,S4X integrates an intrinsic body diode with 330 ns reverse recovery time and 3.6 µC reverse recovery charge, enabling quasi-resonant and discontinuous conduction mode (DCM) flyback designs without external snubbers. Gate threshold voltage of 3.0–4.0 V ensures compatibility with standard 5 V and 15 V gate drivers.

Key Specifications

Pinout & Package

TK12A80W,S4X uses the TO-220SIS (JEITA SC-67 / Toshiba 2-10U1S) package - a fully isolated variant of TO-220 with electrically insulated tab rated for 2000 V_RMS. This allows direct mounting to heatsinks without insulating pads or shoulder washers, reducing thermal resistance and assembly cost.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with STP12N80K5 and IXTH12N80L2, the TK12A80W,S4X delivers superior thermal efficiency via isolated TO-220SIS packaging and lowest R_DS(ON), making it optimal for space-constrained, thermally demanding 100–200 W industrial power supplies where reliability under surge and avalanche stress is critical.

Availability

TK12A80W,S4X is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, universal input adapters, and LED driver power stages requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for TK12A80W,S4X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in high-voltage MOSFET innovation.

The TK12A80W,S4X belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-reliability offline switching power supplies operating up to 800 V.

FAQ

What is the maximum continuous drain current rating for TK12A80W,S4X?

The TK12A80W,S4X has a maximum continuous drain current (I_D) of 11.5 A at T_c = 25 °C. Derating is required above 25 °C case temperature - at 100 °C case, the usable I_D drops to approximately 6.2 A per the thermal derating curve in Figure 8.15. This rating assumes proper heatsinking with ≤2.78 °C/W channel-to-case thermal resistance.

Does TK12A80W,S4X have an isolated package, and what is its isolation voltage rating?

Yes, the TK12A80W,S4X uses the TO-220SIS package with electrically isolated metal tab. Its isolation voltage rating is 2000 V_RMS, verified per safety standards. This eliminates the need for insulating pads or shoulder washers when mounting directly to grounded heatsinks - a key advantage over standard TO-220 variants.

What is the typical gate charge and how does it affect driver selection for TK12A80W,S4X?

The TK12A80W,S4X has a typical total gate charge (Q_g) of 23 nC at V_DD ≈ 640 V and I_D = 11.5 A. With a typical gate resistance of 30 Ω, this supports clean switching at 65–100 kHz using standard 1-A peak gate drivers (e.g., UCC27531). Higher-frequency designs (>130 kHz) benefit from lower-R_G (≤5 Ω) and drivers capable of ≥2 A peak sink/source.

How does the body diode performance of TK12A80W,S4X compare to standard MOSFETs in flyback applications?

The TK12A80W,S4X body diode exhibits t_rr = 330 ns and Q_rr = 3.6 µC at I_DR = 5.8 A - significantly faster and lower charge than conventional 800 V MOSFETs (typically >500 ns, >6 µC). This reduces reverse recovery loss and EMI in DCM flyback converters, enabling higher switching frequencies without snubbers.

Is TK12A80W,S4X suitable for avalanche-prone circuits like flyback snubberless designs?

Yes, the TK12A80W,S4X is fully rated for unclamped inductive switching with guaranteed single-pulse avalanche energy (E_AS) of 358 mJ at T_ch = 25 °C. This makes it suitable for snubberless flyback and active-clamp forward converters where leakage inductance energy must be absorbed internally - confirmed in Figure 8.14 of the datasheet.