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Toshiba Semiconductor and Storage TK12E80W,S1X
- Part No.:
- TK12E80W,S1X
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
TK12E80W,S1X.pdf
- Description:
- MOSFET N-CH 800V 11.5A TO220
- Quantity:
- Payment:
- Shipping:
Inventory:8,460
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Product details
Overview
TK12E80W from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline AC-DC power supplies and industrial SMPS. It features 800 V drain-source breakdown voltage, 0.38 Ω typical RDS(ON) at VGS = 10 V, 11.5 A DC drain current, and TO-220 package with isolated heatsink-connected drain.
For engineers reviewing the TK12E80W datasheet, TK12E80W pinout, TK12E80W application, or TK12E80W equivalent, this device is selected for high-efficiency, high-reliability 400–640 V bus applications where low conduction loss, avalanche ruggedness (326 mJ), and gate drive simplicity are critical.
Technical Context
The TK12E80W employs Toshiba's DTMOS™ IV super-junction structure to achieve low RDS(ON) × area while maintaining high VDSS. Its enhancement-mode threshold (Vth = 3.0–4.0 V) enables direct drive from standard 5 V or 10 V controllers without level-shifting.
Thermal design is supported by 0.757 °C/W channel-to-case resistance and 150 °C maximum channel temperature. The device integrates an intrinsic body diode with 330 ns reverse recovery time and 3.6 µC Qrr, suitable for hard-switched flyback and LLC resonant topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 800 V - supports 640 V DC bus designs with 25 % safety margin for surge and ringing |
| RDS(ON) (typ.) | 0.38 Ω at VGS = 10 V - reduces conduction loss to ≤2.2 W at 7.5 A RMS in 100 kHz SMPS |
| ID (DC) | 11.5 A - enables ≥150 W continuous output in TO-220-mounted offline converters |
| EAS | 326 mJ - withstands single-pulse avalanche events common during overvoltage transients |
| Ciss | 1400 pF - balances switching speed and EMI control when driven with 10 Ω gate resistor |
| Qg | 23 nC - allows efficient 100–300 kHz operation with <1 W gate drive loss using standard drivers |
| Tch(max) | 150 °C - defines thermal derating limit for PCB layout and heatsink sizing |
Pinout & Package
Package: TO-220 (TOSHIBA designation 2-10X1A), through-hole, isolated heatsink tab (Drain connected to tab). Weight: 1.93 g (typ.).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Control terminal; requires ≤±20 V gate-source voltage; sensitive to ESD |
| 2 | Drain (Heatsink) | Main high-side current path; electrically connected to metal tab; must be insulated from chassis unless referenced to high-voltage rail |
| 3 | Source | Power return and reference node for gate drive; ties to low-side switch or ground in flyback/LLC configurations |
Key Features
| Feature | Design Value |
|---|---|
| Super-junction DTMOS™ IV structure | Enables 800 V rating with 0.38 Ω RDS(ON), reducing die size and cost vs. planar alternatives |
| Low gate charge (Qg = 23 nC) | Minimizes driver power loss and simplifies selection of low-cost gate drivers (e.g., UCC27531) |
| High dv/dt ruggedness (≥50 V/ns) | Ensures reliable operation under fast voltage transitions in hard-switched topologies without false turn-on |
| Intrinsic body diode with low Qrr | 3.6 µC reverse recovery charge reduces switching loss and EMI in quasi-resonant converters |
| Avalanche-rated (EAS = 326 mJ) | Eliminates need for external snubbers in clamp circuits and improves system robustness against inductive kick |
Applications
| Industrial SMPS | Server PSU Front-End |
|---|---|
|
Use Scenario: 1 kW open-frame power supply for factory automation PLCs operating from 3-phase 400 V AC input. IC Role / Device Role / Timing Role: Primary-side high-voltage switch in active clamp forward topology running at 150 kHz. Use Value: 0.38 Ω RDS(ON) cuts conduction loss by 35 % vs. legacy 0.65 Ω MOSFETs, improving full-load efficiency to >92 %. |
Use Scenario: 80+ Titanium-certified 1600 W server power supply with PFC + LLC stages. IC Role / Device Role / Timing Role: PFC boost switch handling 11.5 A DC current at 400 V DC bus. Use Value: 326 mJ avalanche energy absorbs line surge events without failure, meeting IEC 61000-4-5 Level 4 immunity. |
| LED Streetlight Driver | EV Charger Auxiliary Supply |
|
Use Scenario: Outdoor 150 W constant-current LED driver with universal AC input (90–305 V AC). IC Role / Device Role / Timing Role: Main switch in discontinuous conduction mode (DCM) flyback converter. Use Value: 3.0–4.0 V gate threshold ensures clean turn-on with standard 5 V PWM controllers, avoiding shoot-through risk. |
Use Scenario: 24 V/3 A auxiliary power supply inside 11 kW AC EV on-board charger. IC Role / Device Role / Timing Role: High-side switch in isolated forward converter powering MCU, gate drivers, and sensors. Use Value: 0.757 °C/W Rth(ch-c) allows direct mounting to aluminum chassis, eliminating discrete heatsink and saving 8 cm² PCB area. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP12NM80 | RDS(ON) = 0.45 Ω (max), lower EAS (220 mJ), same TO-220 package | Limited to 120 W continuous output due to higher conduction loss and reduced avalanche margin | Acceptable for cost-sensitive 65–100 W adapters where surge immunity is less critical |
| IPP60R190C7 | 600 V rating, 0.19 Ω RDS(ON), CoolMOS™ C7 technology, smaller SMD package (TO-220FP) | Not suitable for 800 V bus designs; requires redesign for 400 V systems only | Preferred for space-constrained 400 V PFC stages needing <0.2 Ω RDS(ON) and lower Qg |
Compared with STP12NM80 and IPP60R190C7, the TK12E80W uniquely delivers 800 V capability with sub-0.4 Ω RDS(ON) in TO-220, making it optimal for industrial 640 V DC bus converters where both voltage headroom and thermal performance are non-negotiable.
Availability
TK12E80W is available at Aetrix Electronics and suitable for industrial SMPS, server power supplies, LED streetlight drivers, and EV charger auxiliary supplies requiring stable component supply across multi-year production cycles.
Supply support for TK12E80W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in high-reliability power MOSFETs.
The TK12E80W belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-voltage AC-DC conversion in industrial and infrastructure power systems.
FAQ
What is the maximum continuous drain current for TK12E80W at 100°C case temperature?
The TK12E80W supports 11.5 A DC drain current at Tc = 25°C. At 100°C case temperature, derating applies per the Safe Operating Area curve (Fig. 8.17): maximum continuous ID drops to approximately 6.2 A to maintain Tch ≤ 150°C. This value is confirmed in the SOA graph and must be validated with actual board-level thermal measurements for the TK12E80W.
Does TK12E80W have a fully rated avalanche capability, and what test conditions apply?
Yes, the TK12E80W is fully rated for single-pulse avalanche with EAS = 326 mJ (Tch = 25°C, VDD = 90 V, L = 112 mH, RG = 25 Ω, IAS = 2.3 A). This rating is guaranteed per Toshiba's reliability testing and appears in Absolute Maximum Ratings Table 4. It is not repetitive or continuous; each event must be separated by sufficient cooling time for the TK12E80W.
Can TK12E80W be used in place of a 600 V MOSFET in a 400 V DC bus application?
Yes, the TK12E80W is compatible with 400 V DC bus applications and offers advantages including lower RDS(ON) (0.38 Ω vs. typical 0.2–0.3 Ω for 600 V parts), higher avalanche margin, and proven ruggedness. However, its gate threshold (3.0–4.0 V) and Qg (23 nC) require verification against existing driver strength and timing constraints in the original 600 V design using TK12E80W.
What is the thermal resistance from channel to ambient (Rth(ch-a)) for TK12E80W in a standard TO-220 mount?
The datasheet specifies Rth(ch-a) = 83.3 °C/W (max) for the TK12E80W in free-air, unmounted conditions. With a 1 cm² copper pad and minimal heatsinking, practical Rth(ch-a) improves to ~45–60 °C/W. For production use, the TK12E80W must be mounted to a heatsink - channel-to-case resistance is 0.757 °C/W (max), which dominates thermal design.
Is TK12E80W RoHS compliant and halogen-free?
Yes, the TK12E80W meets EU RoHS Directive 2011/65/EU requirements and is halogen-free per Toshiba's environmental compliance documentation (Rev. 5.0.B, May 2026). Full material declarations and test reports are available upon request for the TK12E80W through Toshiba's official channels.
TK12E80W,S1X Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- DTMOSIV
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 800 V
- Current - Continuous Drain (Id) @ 25°C:
- 11.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 450mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 570µA
- Gate Charge (Qg) (Max) @ Vgs:
- 23 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1400 pF @ 300 V
- FET Feature:
- -
- Power Dissipation (Max):
- 165W (Tc)
- Operating Temperature:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
TK12E80W,S1X FAQ
1.How can I place an order for TK12E80W,S1X through Aetrix?
Please submit a Request for Quotation (RFQ) for TK12E80W,S1X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TK12E80W,S1X reliable?
The price and inventory of TK12E80W,S1X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK12E80W,S1X is usually 5 days.
3.What payment methods are accepted for TK12E80W,S1X?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK12E80W,S1X transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TK12E80W,S1X?
TK12E80W,S1X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TK12E80W,S1X order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TK12E80W,S1X?
For technical support, including TK12E80W,S1X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK12E80W,S1X requirements.
6.How does Aetrix verify that TK12E80W,S1X is sourced from the original manufacturer or authorized distributors?
All TK12E80W,S1X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK12E80W,S1X meets industry standards.
7.What is the process for return or replacement of TK12E80W,S1X?
All TK12E80W,S1X units undergo pre-shipment inspection (PSI). If there is an issue with TK12E80W,S1X, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TK12E80W,S1X part is unused and in its original packaging.
Return procedure for TK12E80W,S1X:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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