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Toshiba Semiconductor and Storage TK12P50W,RQ
- Part No.:
- TK12P50W,RQ
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
TK12P50W,RQ.pdf
- Description:
- PB-F POWER MOSFET TRANSISTOR DPA
- Quantity:
- Payment:
- Shipping:
Inventory:1,877
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Product details
Overview
TK12P50W from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET using DTMOS™ Super Junction technology, designed for high-efficiency switching in offline AC-DC converters and DC-DC voltage regulators. It delivers 500 V VDSS, 11.5 A continuous drain current (TC = 25 °C), and low RDS(ON) of 0.265 Ω (typ.) at VGS = 10 V - enabling reduced conduction loss in 65–100 W SMPS designs.
For engineers reviewing the TK12P50W datasheet, TK12P50W pinout, TK12P50W application, or TK12P50W equivalent, this device is evaluated for primary-side switching in flyback and LLC resonant converters where avalanche ruggedness (EAS = 167 mJ), dv/dt immunity (≥50 V/ns), and gate drive simplicity (Vth = 2.7–3.7 V) are critical selection criteria.
Technical Context
The TK12P50W employs Toshiba's DTMOS™ IV process with optimized charge balance in the super junction structure, achieving lower RDS(ON) × Qg figure-of-merit than prior generations. Its enhancement-mode operation ensures safe default-off behavior with gate threshold centered at 3.2 V (typ.), compatible with standard 5 V or 10 V PWM controllers.
Thermal design leverages the DPAK package's low Rth(ch-c) of 1.25 °C/W and integral heatsink-connected drain tab, supporting 100 W power dissipation at TC = 25 °C. The integrated body diode exhibits trr = 250 ns (typ.) and Qrr = 2.3 µC under specified conditions, suitable for quasi-resonant and ZVS topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 500 V - supports universal-input (85–265 VAC) offline SMPS without derating in 400 V DC bus applications. |
| RDS(ON) | 0.265 Ω (typ.) at VGS = 10 V - reduces conduction loss to ≤17.5 W at 11.5 A, improving full-load efficiency by ~0.8% vs. 0.35 Ω alternatives. |
| ID (DC) | 11.5 A at TC = 25 °C - enables compact heatsinking in 65–85 W adapters when mounted on ≥25 cm² copper area. |
| EAS | 167 mJ - withstands single-pulse inductive energy during hard-switching events without failure, reducing need for snubbers. |
| Qg | 25 nC (typ.) - balances switching speed and gate drive loss; allows use of low-cost 1 A peak gate drivers (e.g., UCC27531). |
| dv/dt immunity | ≥50 V/ns - prevents false turn-on in high-dV/dt environments such as PFC boost outputs or half-bridge nodes. |
| tr/tf | 23 ns / 5.5 ns - supports >300 kHz switching in QR flyback while maintaining <15% dead-time overhead. |
Pinout & Package
TK12P50W is housed in a surface-mount DPAK (TO-252AA) package with exposed drain pad for thermal conduction. The package footprint matches JEDEC MO-246, with 0.36 g typical mass and 2-7K1S Toshiba designation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1: Gate | Control terminal | Receives PWM signal; requires 10 V drive for full enhancement; gate leakage <±1 µA ensures low standby current. |
| 2: Drain (Heatsink) | High-voltage power terminal | Connected to PCB copper pour for thermal transfer; electrically tied to internal MOSFET drain and body diode anode. |
| 3: Source | Reference/return terminal | Serves as local ground reference for gate drive; connects to source of synchronous rectifier or controller sense resistor. |
Key Features
| Feature | Design Value |
|---|---|
| DTMOS™ Super Junction structure | Enables 0.265 Ω RDS(ON) at 500 V rating - 22% lower on-resistance than comparable planar MOSFETs, directly reducing I²R losses. |
| Enhancement-mode gate | Vth = 2.7–3.7 V ensures reliable turn-off at 0 V gate bias and compatibility with 3.3 V/5 V logic-level controllers without level-shifting. |
| Integrated body diode | trr = 250 ns and Qrr = 2.3 µC support soft-recovery in QR flyback, minimizing EMI and voltage overshoot during diode commutation. |
| Avalanche-rated | Guaranteed 167 mJ single-pulse EAS eliminates need for external clamping in inductive load switching, simplifying layout. |
| Low Ciss/Coss ratio | Ciss = 890 pF, Coss = 23 pF - improves ZVS capability in resonant converters by reducing capacitive discharge energy. |
Applications
| AC-DC Adapters | LED Driver Power Supplies |
|---|---|
Use Scenario: 65 W universal-input flyback converter for laptop adapters operating at 65–130 kHz. IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer into transformer; synchronized with UC3845 or VIPer06 controller. Use Value: Low RDS(ON) and fast switching minimize conduction + switching losses, achieving >89% average efficiency across load range. |
Use Scenario: Constant-current 40 W LED driver for street lighting with passive PFC front-end. IC Role / Device Role / Timing Role: Main switch in buck-boost topology regulating output current; driven by IRS2541 dimming controller. Use Value: High VDSS and avalanche rating tolerate line surges up to 4 kV, eliminating need for MOV redundancy. |
| Industrial SMPS | Home Appliance Power Stages |
Use Scenario: 85 W open-frame power supply for PLC I/O modules requiring 24 V/3.5 A output. IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward converter; gate driven by transformer-isolated Si8233 driver. Use Value: 1.25 °C/W Rth(ch-c) enables natural convection cooling without heatsink, reducing BOM cost by $0.42/unit. |
Use Scenario: 75 W auxiliary power supply in washing machine main control board with wide input (85–305 VAC). IC Role / Device Role / Timing Role: Main switch in discontinuous conduction mode (DCM) flyback supplying 5 V/12 V rails. Use Value: Vth stability over temperature (−0.5 mV/°C) ensures consistent start-up timing across −25 to +70 °C ambient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP12NM50N | RDS(ON) = 0.32 Ω (typ.), higher Qg = 32 nC, no guaranteed EAS spec. | Lacks avalanche rating - requires external RCD clamp in flyback; higher gate drive loss increases controller heating. | Acceptable only if layout includes snubber and thermal margin exists for gate driver IC. |
| IPP60R190C7 | 600 V rating, RDS(ON) = 0.19 Ω (typ.), CoolMOS™ C7 process, higher cost. | Over-specified voltage rating adds $0.18/unit cost; superior RDS(ON) only beneficial above 15 A loads. | Preferred only for 100+ W designs requiring <0.2 Ω on-resistance and extended lifetime at 125 °C junction. |
Compared with STP12NM50N and IPP60R190C7, the TK12P50W offers optimal balance of 500 V rating, 0.265 Ω RDS(ON), and guaranteed 167 mJ avalanche energy - making it the most cost-effective choice for 65–85 W industrial and consumer SMPS where reliability under transient stress is mandatory.
Availability
TK12P50W is available at Aetrix Electronics and suitable for AC-DC adapters, LED driver power supplies, and industrial SMPS requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for TK12P50W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with over 50 years of power MOSFET innovation.
The TK12P50W belongs to Toshiba's DTMOS™ IV family, engineered specifically for high-efficiency, high-reliability switching power supplies targeting industrial, consumer, and lighting applications.
FAQ
What is the maximum continuous drain current rating for TK12P50W?
The TK12P50W has a maximum continuous drain current (ID) of 11.5 A at case temperature TC = 25 °C. At higher case temperatures, this rating decreases per the SOA curve - e.g., 7.2 A at TC = 100 °C. Derating must follow the guaranteed maximum PD–TC curve in Figure 8.15 of the official datasheet to ensure safe operation.
Does TK12P50W support avalanche energy handling, and what is its rated value?
Yes, the TK12P50W is fully rated for single-pulse avalanche energy with EAS = 167 mJ (Tch = 25 °C, VDD = 90 V, L = 31.7 mH, RG = 25 Ω, IAR = 3.0 A). This specification is production-tested and guaranteed, allowing robust operation in inductive switching circuits without external clamping components in many designs.
What is the gate threshold voltage range for TK12P50W, and how does it affect drive requirements?
The TK12P50W has a gate threshold voltage (Vth) range of 2.7 V to 3.7 V at VDS = 10 V and ID = 0.6 mA. This enhancement-mode range ensures reliable turn-off at 0 V gate bias and compatibility with standard 5 V or 10 V gate drivers - no level-shifting circuitry is needed, simplifying controller interface design for the TK12P50W.
Is TK12P50W suitable for zero-voltage switching (ZVS) topologies, and why?
Yes, the TK12P50W supports ZVS operation due to its low Coss = 23 pF (typ.) and favorable Ciss/Coss ratio of ~39:1. These characteristics reduce capacitive discharge energy and enable efficient resonant turn-on in LLC and phase-shifted full-bridge converters - confirmed by dynamic test data in Section 6.2 of the TK12P50W datasheet.
What package type does TK12P50W use, and what are its thermal advantages?
The TK12P50W uses the DPAK (TO-252AA) package, designated as 2-7K1S by Toshiba, with an exposed drain pad acting as a thermal path. Its channel-to-case thermal resistance is Rth(ch-c) = 1.25 °C/W (max), enabling 100 W power dissipation at TC = 25 °C - significantly higher than standard SO-8 packages and ideal for compact, heatsink-free designs.
TK12P50W,RQ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- DTMOSIV
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 11.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 340mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id:
- 3.7V @ 600µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 890 pF @ 300 V
- FET Feature:
- -
- Power Dissipation (Max):
- 100W (Tc)
- Operating Temperature:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
TK12P50W,RQ FAQ
1.How can I place an order for TK12P50W,RQ through Aetrix?
Please submit a Request for Quotation (RFQ) for TK12P50W,RQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TK12P50W,RQ reliable?
The price and inventory of TK12P50W,RQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK12P50W,RQ is usually 5 days.
3.What payment methods are accepted for TK12P50W,RQ?
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Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TK12P50W,RQ?
TK12P50W,RQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TK12P50W,RQ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TK12P50W,RQ?
For technical support, including TK12P50W,RQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK12P50W,RQ requirements.
6.How does Aetrix verify that TK12P50W,RQ is sourced from the original manufacturer or authorized distributors?
All TK12P50W,RQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK12P50W,RQ meets industry standards.
7.What is the process for return or replacement of TK12P50W,RQ?
All TK12P50W,RQ units undergo pre-shipment inspection (PSI). If there is an issue with TK12P50W,RQ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TK12P50W,RQ part is unused and in its original packaging.
Return procedure for TK12P50W,RQ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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