Toshiba Semiconductor and Storage TK12P60W,RVQ
- Part No.:
- TK12P60W,RVQ
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
TK12P60W,RVQ.pdf
- Description:
- MOSFET N CH 600V 11.5A DPAK
- Quantity:
- Payment:

- Shipping:

Inventory:1,930
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Product details
Overview
TK12P60W,RVQ from Toshiba is a silicon N-channel power MOSFET using DTMOS™ super-junction technology, designed for high-voltage switching in offline AC-DC converters and DC-DC regulators. It delivers 600 V VDSS, 11.5 A continuous drain current, and low RDS(ON) of 0.265 Ω (typ.) at VGS = 10 V, enabling efficient operation in 85–265 VAC input SMPS designs.
For engineers reviewing the TK12P60W,RVQ datasheet, TK12P60W,RVQ pinout, TK12P60W,RVQ application, or TK12P60W,RVQ equivalent, key selection considerations include its DPAK package thermal performance (Rth(ch-c) = 1.25 °C/W), avalanche ruggedness (EAS = 140 mJ), and gate threshold voltage range (2.7–3.7 V) for reliable drive compatibility with standard PWM controllers.
Technical Context
This MOSFET employs Toshiba's DTMOS™ IV super-junction structure to achieve low conduction loss while maintaining fast switching characteristics. Its enhancement-mode operation with Vth = 2.7–3.7 V ensures compatibility with 3.3 V and 5 V logic-level gate drivers, and its built-in body diode supports flyback and resonant converter topologies.
The device features optimized dynamic parameters including Ciss = 890 pF (typ.), Qg = 25 nC (typ.), and dv/dt ruggedness ≥50 V/ns - critical for stable operation in high-frequency, high-voltage switching applications without spurious turn-on.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 600 V - supports primary-side switching in universal-input offline SMPS up to 400 V DC bus |
| RDS(ON) | 0.265 Ω (typ.) - reduces conduction loss and thermal stress at 5.8 A operating current |
| ID (DC) | 11.5 A - enables use in 100 W–150 W power supplies with adequate heatsinking |
| EAS | 140 mJ - provides single-pulse avalanche energy margin for inductive load transients |
| Rth(ch-c) | 1.25 °C/W - allows 100 W power dissipation with ≤125 °C channel-to-case temperature rise |
| Qg | 25 nC (typ.) - determines gate drive power requirement and switching speed in hard-switched topologies |
| Vth | 2.7–3.7 V - ensures robust turn-on with standard PWM ICs and avoids false triggering near ground |
Pinout & Package
TK12P60W,RVQ is housed in a surface-mount DPAK (TOSHIBA 2-7K1S) package with exposed drain pad for thermal conduction to PCB copper. The package weighs 0.36 g and features gull-wing leads compatible with standard reflow profiles.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1: Gate | Control electrode | Receives gate drive signal; requires <1 µA leakage current and 2.7–3.7 V threshold for reliable turn-on |
| 2: Drain (Heatsink) | High-voltage output terminal | Connected to primary-side high-voltage rail; electrically and thermally coupled to PCB copper pour |
| 3: Source | Reference node / return path | Serves as local ground reference for gate drive and current sensing; carries full load current |
Key Features
| Feature | Design Value |
|---|---|
| DTMOS™ super-junction structure | Enables 600 V rating with RDS(ON) 30% lower than planar MOSFETs of same die size, improving power density |
| Enhancement-mode gate | Guarantees off-state by default; eliminates need for pull-down resistors in most gate-drive configurations |
| Low gate charge (Qg = 25 nC) | Reduces driver power loss and enables higher switching frequencies without excessive gate drive losses |
| Avalanche-rated (EAS = 140 mJ) | Withstands inductive energy spikes during overcurrent or short-circuit events without failure |
| Body diode with trr = 250 ns | Supports synchronous rectification and flyback operation with predictable reverse recovery behavior |
Applications
| AC-DC Adapters | Industrial SMPS |
|---|---|
Use Scenario: 65 W laptop adapter with universal AC input (85–265 VAC) and quasi-resonant flyback topology. IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer to secondary winding. Use Value: Low RDS(ON) and high VDSS enable >88% efficiency at full load while meeting IEC 61000-3-2 harmonic limits. | Use Scenario: 120 W industrial control power supply operating continuously at 60 °C ambient. IC Role / Device Role / Timing Role: Main switching element in active-clamp forward converter with 100 kHz switching frequency. Use Value: Rth(ch-c) = 1.25 °C/W and Tch max = 150 °C allow stable operation without forced air cooling. |
| LED Driver Power Supplies | Server PSU Front-End |
Use Scenario: Constant-current LED driver for street lighting with PFC + flyback architecture. IC Role / Device Role / Timing Role: PFC boost switch handling 10 A peak current at 400 V DC bus. Use Value: Avalanche rating and 11.5 A DC current support robust operation under line surges and lamp short-circuit conditions. | Use Scenario: 80 PLUS Platinum server PSU using LLC resonant converter with high-side switch. IC Role / Device Role / Timing Role: High-side primary switch in half-bridge configuration driving resonant tank. Use Value: Low Ciss (890 pF) and Crss (2.8 pF) minimize capacitive losses and improve ZVS behavior above 200 kHz. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP12NM60ND | 600 V, 12 A, RDS(ON) = 0.32 Ω (typ.), TO-220 package, no guaranteed EAS rating | Requires external heatsink; less suitable for compact DPAK-restricted layouts | Preferred where mechanical mounting flexibility outweighs board space constraints |
| IPP60R190C7 | 600 V, 18.5 A, RDS(ON) = 0.19 Ω (typ.), PG-TO220-3-1 package, CoolMOS™ C7 technology | Higher current rating and lower RDS(ON) but larger footprint and higher gate charge (Qg = 37 nC) | Selected when upgrading power capacity beyond 120 W or optimizing for ultra-low conduction loss |
Compared with STP12NM60ND and IPP60R190C7, the TK12P60W,RVQ offers superior thermal resistance in DPAK form factor and guaranteed avalanche capability - making it optimal for space-constrained, reliability-critical 100 W industrial SMPS where layout density and transient robustness are prioritized over raw current headroom.
Availability
TK12P60W,RVQ is available at Aetrix Electronics and suitable for AC-DC adapters, industrial SMPS, and LED driver power supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.
Supply support for TK12P60W,RVQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in high-voltage MOSFET design and manufacturing.
The TK12P60W,RVQ belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in consumer, industrial, and lighting applications.
FAQ
What is the maximum continuous drain current for TK12P60W,RVQ at 100 °C case temperature?
The TK12P60W,RVQ supports 11.5 A DC drain current at Tc = 25 °C. At Tc = 100 °C, derating applies per the Safe Operating Area curve (Fig. 8.17); the practical continuous current is approximately 7.2 A, based on thermal resistance Rth(ch-c) = 1.25 °C/W and Tch limit of 150 °C. Always verify with actual board thermal design before finalizing.
Does TK12P60W,RVQ have a fully rated avalanche capability, and what is the test condition?
Yes, TK12P60W,RVQ is fully specified for single-pulse avalanche energy: EAS = 140 mJ (min). This is measured under standardized conditions: VDD = 90 V, Tch = 25 °C (initial), L = 27.2 mH, RG = 25 Ω, and IAR = 3.0 A. The rating ensures robustness against inductive switching transients in flyback and forward converters.
Can TK12P60W,RVQ be driven directly by a 3.3 V microcontroller GPIO pin?
No - the TK12P60W,RVQ has a gate threshold voltage range of 2.7–3.7 V and requires ≥10 V VGS for full enhancement (RDS(ON) = 0.265 Ω typ.). Driving with only 3.3 V results in high RDS(ON) (>2 Ω), excessive heating, and potential failure. A dedicated gate driver IC or level-shifting circuit is required for reliable operation of TK12P60W,RVQ.
What is the meaning of "RVQ" suffix in TK12P60W,RVQ?
The "RVQ" suffix in TK12P60W,RVQ denotes Toshiba's tape-and-reel packaging variant for automated SMT assembly: 8 mm carrier tape, 2,000 units per reel, and RoHS-compliant lead-free finish. It does not indicate electrical or functional differentiation from TK12P60W - all parametric specifications remain identical across both part numbers.
Is TK12P60W,RVQ suitable for use in automotive applications?
No - TK12P60W,RVQ is not qualified to AEC-Q101 and is explicitly excluded from automotive use per Toshiba's RESTRICTIONS ON PRODUCT USE notice. It lacks automotive-grade screening, extended temperature validation, and failure rate data required for vehicle systems. For automotive applications, select AEC-Q101-qualified alternatives such as TK12P60W-A or equivalent qualified parts.
TK12P60W,RVQ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- DTMOSIV
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 11.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 340mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id:
- 3.7V @ 600µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 890 pF @ 300 V
- FET Feature:
- -
- Power Dissipation (Max):
- 100W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
TK12P60W,RVQ FAQ
1.How can I place an order for TK12P60W,RVQ through Aetrix?
Please submit a Request for Quotation (RFQ) for TK12P60W,RVQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TK12P60W,RVQ reliable?
The price and inventory of TK12P60W,RVQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK12P60W,RVQ is usually 5 days.
3.What payment methods are accepted for TK12P60W,RVQ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK12P60W,RVQ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TK12P60W,RVQ?
TK12P60W,RVQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TK12P60W,RVQ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TK12P60W,RVQ?
For technical support, including TK12P60W,RVQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK12P60W,RVQ requirements.
6.How does Aetrix verify that TK12P60W,RVQ is sourced from the original manufacturer or authorized distributors?
All TK12P60W,RVQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK12P60W,RVQ meets industry standards.
7.What is the process for return or replacement of TK12P60W,RVQ?
All TK12P60W,RVQ units undergo pre-shipment inspection (PSI). If there is an issue with TK12P60W,RVQ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TK12P60W,RVQ part is unused and in its original packaging.
Return procedure for TK12P60W,RVQ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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