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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK12P60W,RVQ(S

Name: TK12P60W,RVQ(S
Brand: Toshiba Semiconductor and Storage
SKU: TK12P60W,RVQ(S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK12P60W,RVQ(S

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: TK12P60W,RVQ(S.pdf

Description:: MOSFET N-CH 600V 11.5A DPAK

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Product details

Overview

TK12P60W,RVQ(S from Toshiba is a 600 V, 11.5 A N-channel Super Junction MOSFET using DTMOS™ technology, optimized for high-efficiency switching voltage regulators and PFC stages. It delivers R_DS(ON) = 0.265 Ω (typ.) at V_GS = 10 V, operates in enhancement mode with V_th = 2.7–3.7 V, and features integrated body diode with t_rr = 250 ns.

For engineers reviewing the TK12P60W,RVQ(S datasheet, TK12P60W,RVQ(S pinout, TK12P60W,RVQ(S application, or TK12P60W,RVQ(S equivalent, key selection criteria include avalanche ruggedness (E_AS = 140 mJ), dV/dt immunity (≥50 V/ns), thermal resistance (R_th(ch-c) = 1.25 °C/W), and DPAK package suitability for surface-mount power conversion designs.

Technical Context

This device implements Toshiba's DTMOS™ IV process-Super Junction architecture enabling low R_DS(ON) without sacrificing switching speed. Its gate threshold (2.7–3.7 V) ensures compatibility with standard 3.3 V/5 V logic drivers while maintaining noise immunity.

Designed for hard-switched topologies, it supports single-pulse avalanche operation up to 140 mJ and exhibits robust dv/dt ruggedness (≥50 V/ns), critical for flyback and LLC resonant converters operating near breakdown limits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Supports input voltages up to 400 V AC rectified systems with safety margin.
R_DS(ON)	0.265 Ω (typ.) - Reduces conduction loss in 11.5 A DC applications like server PSU primary switches.
I_D (DC)	11.5 A - Enables continuous operation in compact 100 W–300 W offline SMPS designs.
E_AS	140 mJ - Withstands single-pulse inductive energy without failure in clamp or snubber circuits.
R_th(ch-c)	1.25 °C/W - Allows direct heatsink mounting via drain tab for thermal management in DPAK footprint.
t_rr	250 ns - Limits reverse recovery loss in discontinuous conduction mode (DCM) PFC boost stages.
Q_g	25 nC - Determines gate drive power requirement; compatible with common 1–2 A peak gate drivers.

Pinout & Package

Package: DPAK (TOSHIBA 2-7K1S), surface-mount, thermally enhanced with exposed drain pad acting as heatsink contact.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal; requires ≤±30 V drive; threshold defined at V_GS = 2.7–3.7 V.
2	Drain (Heatsink)	Main current path and thermal interface; electrically connected to case for PCB copper pour cooling.
3	Source	Reference node for gate drive and current sensing; connects to power ground in low-side configurations.

Key Features

Feature	Design Value
DTMOS™ Super Junction structure	Enables 0.265 Ω R_DS(ON) at 600 V rating-reducing conduction loss by >35% vs. planar MOSFETs in same package.
Enhancement-mode gate	V_th = 2.7–3.7 V ensures reliable turn-on with 3.3 V microcontrollers and avoids unintended conduction during startup.
Integrated fast-recovery body diode	t_rr = 250 ns and Q_rr = 2.3 µC minimize switching loss in synchronous rectification and freewheeling paths.
Avalanche-rated design	Guaranteed E_AS = 140 mJ supports unclamped inductive switching in flyback and forward converters.

Applications

Server Power Supply	Industrial AC-DC Adapter
Use Scenario: Primary-side switch in 300 W active-clamp forward converter for telecom servers. IC Role / Device Role / Timing Role: High-voltage switching element handling 400 V DC bus with 100 kHz PWM. Use Value: Low R_DS(ON) reduces conduction loss; avalanche rating eliminates need for external snubbers.	Use Scenario: PFC boost switch in 200 W industrial AC-DC adapter with universal input (90–264 V AC). IC Role / Device Role / Timing Role: Fast-switching power transistor controlling boost inductor current in continuous conduction mode. Use Value: 250 ns reverse recovery time minimizes dead-time loss; dV/dt ruggedness prevents false triggering.
LED Driver Power Stage	UPS Inverter Output Stage
Use Scenario: High-side switch in isolated LED driver with 600 V isolation barrier and dimming control. IC Role / Device Role / Timing Role: Regulates constant-current output via PWM-controlled high-voltage switching node. Use Value: 1.25 °C/W thermal resistance enables stable operation on minimal copper area, reducing board cost.	Use Scenario: Half-bridge leg switch in 1 kVA online UPS inverter stage converting 400 V DC to 230 V AC. IC Role / Device Role / Timing Role: Hard-switched power switch operating at 20 kHz with bidirectional current capability. Use Value: Body diode Q_rr = 2.3 µC lowers commutation loss during zero-voltage switching transitions.

Server Power Supply

Industrial AC-DC Adapter

Use Scenario: Primary-side switch in 300 W active-clamp forward converter for telecom servers.

IC Role / Device Role / Timing Role: High-voltage switching element handling 400 V DC bus with 100 kHz PWM.

Use Value: Low R_DS(ON) reduces conduction loss; avalanche rating eliminates need for external snubbers.

Use Scenario: PFC boost switch in 200 W industrial AC-DC adapter with universal input (90–264 V AC).

IC Role / Device Role / Timing Role: Fast-switching power transistor controlling boost inductor current in continuous conduction mode.

Use Value: 250 ns reverse recovery time minimizes dead-time loss; dV/dt ruggedness prevents false triggering.

LED Driver Power Stage

UPS Inverter Output Stage

Use Scenario: High-side switch in isolated LED driver with 600 V isolation barrier and dimming control.

IC Role / Device Role / Timing Role: Regulates constant-current output via PWM-controlled high-voltage switching node.

Use Value: 1.25 °C/W thermal resistance enables stable operation on minimal copper area, reducing board cost.

Use Scenario: Half-bridge leg switch in 1 kVA online UPS inverter stage converting 400 V DC to 230 V AC.

IC Role / Device Role / Timing Role: Hard-switched power switch operating at 20 kHz with bidirectional current capability.

Use Value: Body diode Q_rr = 2.3 µC lowers commutation loss during zero-voltage switching transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NK60ZFP	R_DS(ON) = 0.38 Ω (typ.), E_AS = 120 mJ, TO-220FP package	Larger footprint and higher conduction loss; less suitable for space-constrained SMT designs	Choose when legacy through-hole layout exists and thermal mass of TO-220FP is preferred.
IPP60R190C7	R_DS(ON) = 0.19 Ω (typ.), 650 V rating, PG-TO220-3-1 package, CoolMOS™ C7	Lower R_DS(ON) but higher gate charge (Q_g = 34 nC); requires stronger gate driver	Choose for higher efficiency at light loads where Q_g-related switching loss dominates.

Compared with STP12NK60ZFP and IPP60R190C7, the TK12P60W,RVQ(S offers optimal balance of low R_DS(ON), moderate Q_g, and DPAK thermal performance-making it ideal for cost-sensitive, surface-mount 200–400 W power supplies where layout density and driver simplicity matter.

Availability

TK12P60W,RVQ(S is available at Aetrix Electronics and suitable for switching voltage regulators, industrial AC-DC adapters, and LED driver power stages requiring stable component supply and long-term production continuity.

Supply support for TK12P60W,RVQ(S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with global manufacturing and quality certification.

The TK12P60W,RVQ(S belongs to Toshiba's DTMOS™ IV Super Junction MOSFET product line, engineered for high-efficiency, high-reliability AC-DC and DC-DC conversion in industrial and computing power supplies.

FAQ

What is the maximum continuous drain current for TK12P60W,RVQ(S at 100°C case temperature?

The TK12P60W,RVQ(S supports I_D = 11.5 A DC at T_c = 25°C. At T_c = 100°C, derating applies per the Safe Operating Area curve (Fig. 8.17); maximum continuous current drops to approximately 7.2 A due to thermal limitation and R_DS(ON) increase. Always verify actual channel temperature using R_th(ch-c) = 1.25 °C/W and measured power dissipation.

Does TK12P60W,RVQ(S have avalanche capability, and how is it specified?

Yes, the TK12P60W,RVQ(S is fully avalanche-rated with guaranteed single-pulse E_AS = 140 mJ (T_ch = 25°C, V_DD = 90 V, L = 27.2 mH, R_G = 25 Ω, I_AR = 3.0 A). This rating allows safe operation under unclamped inductive switching conditions typical in flyback and forward converters without external protection.

What is the gate threshold voltage range for TK12P60W,RVQ(S, and why does it matter for drive circuit design?

The TK12P60W,RVQ(S has V_th = 2.7–3.7 V (V_DS = 10 V, I_D = 0.6 mA). This range ensures reliable turn-on with 3.3 V logic-level drivers while providing sufficient noise margin against false triggering. Designers must ensure gate drive voltage exceeds 4.5 V to achieve full R_DS(ON) performance and avoid linear-mode operation.

Can TK12P60W,RVQ(S be used in synchronous rectification topologies?

No-the TK12P60W,RVQ(S is not optimized for synchronous rectification. Its body diode has t_rr = 250 ns and Q_rr = 2.3 µC, which is acceptable for freewheeling but too slow for high-frequency SR. Dedicated low-Q_rr, logic-level MOSFETs (e.g., SiC Schottky or trench-MOS) are recommended for SR applications above 100 kHz.

Is TK12P60W,RVQ(S RoHS-compliant and halogen-free?

Yes, the TK12P60W,RVQ(S meets EU RoHS Directive requirements and is halogen-free per Toshiba's environmental compliance documentation (Rev. 4.0.A, 2026-04-14). Full material declarations and test reports are available upon request from Toshiba or authorized distributors.

TK12P60W,RVQ(S Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: DTMOSIV

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 11.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 340mOhm @ 5.8A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 600µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 890 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 100W (Tc)

Operating Temperature:: 150°C

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

TK12P60W,RVQ(S FAQ

1.How can I place an order for TK12P60W,RVQ(S through Aetrix?

Please submit a Request for Quotation (RFQ) for TK12P60W,RVQ(S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK12P60W,RVQ(S reliable?

The price and inventory of TK12P60W,RVQ(S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK12P60W,RVQ(S is usually 5 days.

3.What payment methods are accepted for TK12P60W,RVQ(S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK12P60W,RVQ(S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK12P60W,RVQ(S?

TK12P60W,RVQ(S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK12P60W,RVQ(S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK12P60W,RVQ(S?

For technical support, including TK12P60W,RVQ(S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK12P60W,RVQ(S requirements.

6.How does Aetrix verify that TK12P60W,RVQ(S is sourced from the original manufacturer or authorized distributors?

All TK12P60W,RVQ(S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK12P60W,RVQ(S meets industry standards.

7.What is the process for return or replacement of TK12P60W,RVQ(S?

All TK12P60W,RVQ(S units undergo pre-shipment inspection (PSI). If there is an issue with TK12P60W,RVQ(S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK12P60W,RVQ(S part is unused and in its original packaging.

Return procedure for TK12P60W,RVQ(S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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