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Toshiba Semiconductor and Storage TK12V60W,LVQ
- Part No.:
- TK12V60W,LVQ
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- 4-VSFN Exposed Pad
- Datasheet:
-
TK12V60W,LVQ.pdf
- Description:
- MOSFET N-CH 600V 11.5A 4DFN
- Quantity:
- Payment:
- Shipping:
Inventory:6,193
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Product details
Overview
TK12V60W,LVQ from Toshiba is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline power supplies and DC-DC converters. It features 600 V VDSS, 0.265 Ω RDS(ON) (typ.), 11.5 A ID (DC), DFN8x8 package with heatsink-integrated drain, and enhancement-mode gate threshold of 2.7–3.7 V.
For engineers reviewing the TK12V60W,LVQ datasheet, TK12V60W,LVQ pinout, TK12V60W,LVQ application, or TK12V60W,LVQ equivalent, key selection considerations include avalanche ruggedness (93 mJ), dv/dt immunity (≥50 V/ns), thermal resistance (1.2 °C/W channel-to-case), and source pin separation for gate return vs. main current paths.
Technical Context
The TK12V60W,LVQ implements Toshiba's DTMOS™ super-junction architecture to achieve low on-resistance while maintaining fast switching and robust avalanche capability. Its internal structure separates Source1 (gate return) and Source2 (main current path) to minimize common-source inductance and improve gate drive stability under high di/dt conditions.
Designed for hard-switched PFC and LLC resonant converter primary-side switches, it supports 400 V bus operation with 25 ns typical reverse recovery time and 2.3 µC Qrr in its integrated body diode - enabling efficient zero-current switching transitions without external freewheeling diodes in certain topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 600 V - supports universal AC input (85–265 VAC) rectified to 375–400 VDC bus with margin |
| RDS(ON) | 0.265 Ω (typ.) - reduces conduction loss in 10–15 W/cm² power density designs |
| ID (DC) | 11.5 A - enables continuous operation up to ~120 W at 100 kHz in TO-220-equivalent thermal footprint |
| EAS | 93 mJ - withstands single-pulse inductive energy without failure during startup or overload |
| Rth(ch-c) | 1.2 °C/W - allows 104 W dissipation with ≤125 °C case temperature rise above ambient |
| Qg | 25 nC - determines gate driver current requirement (~1.25 A peak for 20 ns turn-on) |
| dv/dt immunity | ≥50 V/ns - prevents false turn-on in high-noise bridge-leg configurations |
Pinout & Package
TK12V60W,LVQ uses the DFN8x8 (TOSHIBA 2-8T1A) surface-mount package with exposed drain pad for thermal conduction. The 5-terminal layout isolates gate return and power return paths to suppress switching noise coupling.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Control terminal; requires <2.7 V to ensure full off-state; 10 V recommended for RDS(ON) spec |
| 2 | Source1 | Gate drive return path only - must connect to gate driver ground, not power ground |
| 3,4 | Source2 | Main current return path - connects to bulk capacitor negative or low-side switch node |
| 5 | Drain (Heatsink) | High-voltage output node and thermal interface - soldered directly to PCB copper pour for heat extraction |
Key Features
| Feature | Design Value |
|---|---|
| Super-junction DTMOS™ structure | Enables 600 V rating with RDS(ON) competitive with 500 V MOSFETs, reducing conduction loss by >30% vs. planar equivalents |
| Separated source terminals | Eliminates gate loop inductance from power current path, improving EMI and preventing oscillation during fast dV/dt transitions |
| Enhancement-mode threshold | Vth = 2.7–3.7 V ensures reliable turn-off at 0 V gate bias and compatibility with standard 3.3/5 V logic-level drivers |
| Avalanche-rated design | Guaranteed 93 mJ single-pulse energy absorption enables robust operation in inductive load switching without snubbers |
| Body diode with low Qrr | 2.3 µC reverse recovery charge minimizes commutation loss in quasi-resonant and ZVS topologies |
Applications
| Server PSU Primary Switch | Industrial AC-DC Adapter |
|---|---|
Use Scenario: 80+ Gold 1U 500 W server power supply operating at 100 kHz with active clamp forward topology. IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC bus and 10 A peak primary current. Use Value: Low RDS(ON) and 1.2 °C/W thermal resistance enable >94% efficiency at full load without forced air cooling. | Use Scenario: DIN-rail mounted 24 V/20 A industrial power adapter with wide input range (85–305 VAC). IC Role / Device Role / Timing Role: PFC boost switch in continuous conduction mode (CCM) with 65 kHz switching frequency. Use Value: 93 mJ EAS rating ensures reliability during line surges and brownouts without derating. |
| LED Driver Bulk Switch | EV Charger Auxiliary Supply |
Use Scenario: Outdoor LED streetlight driver with 600 V isolation barrier and 150 W output. IC Role / Device Role / Timing Role: Primary-side switch in flyback converter with 60 kHz operation and 3 kV reinforced isolation. Use Value: Separated Source1/Source2 pins reduce gate ringing and EMI emissions below CISPR-15 Class B limits. | Use Scenario: 12 V/5 A auxiliary power supply inside 22 kW AC EV charger cabinet. IC Role / Device Role / Timing Role: Main switch in half-bridge LLC resonant converter powering control board and fans. Use Value: 50 V/ns dv/dt immunity prevents spurious turn-on during high-frequency transformer leakage spikes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP12N60DM6 | 600 V, 0.28 Ω RDS(ON), 12 A ID, TO-220FP package, no separated sources | Requires external gate resistor tuning for EMI; higher thermal resistance (1.8 °C/W) demands larger heatsink | Preferred where through-hole assembly or legacy footprint compatibility is required |
| IXTH12N60L2 | 600 V, 0.32 Ω RDS(ON), 12 A ID, TO-247 package, 100 mJ EAS, no source separation | Higher conduction loss; superior avalanche rating but larger footprint and cost | Chosen when maximum ruggedness outweighs size and efficiency constraints |
Compared with STP12N60DM6 and IXTH12N60L2, the TK12V60W,LVQ delivers lower RDS(ON) in a thermally optimized DFN8x8 package with intentional source separation - making it optimal for space-constrained, high-efficiency 600 V SMPS designs where gate drive integrity and thermal management are critical.
Availability
TK12V60W,LVQ is available at Aetrix Electronics and suitable for server PSUs, industrial AC-DC adapters, and LED driver bulk switching requiring stable component supply across multi-year production cycles.
Supply support for TK12V60W,LVQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with over 50 years of power MOSFET innovation.
The TK12V60W,LVQ belongs to Toshiba's DTMOS™ VI super-junction MOSFET product line, engineered specifically for high-efficiency, high-reliability offline SMPS in datacenter, industrial, and lighting applications.
FAQ
What is the gate threshold voltage range for TK12V60W,LVQ?
The TK12V60W,LVQ has a guaranteed gate threshold voltage (Vth) range of 2.7 V to 3.7 V, measured at VDS = 10 V and ID = 0.6 mA. This enhancement-mode specification ensures reliable turn-off at 0 V gate bias and compatibility with standard 3.3 V or 5 V microcontroller outputs. The TK12V60W,LVQ requires ≥10 V gate drive to achieve its rated RDS(ON) of 0.265 Ω.
How does the dual-source pin configuration of TK12V60W,LVQ improve switching performance?
The TK12V60W,LVQ separates Source1 (pin 2) for gate drive return and Source2 (pins 3 & 4) for main current return to eliminate shared source inductance between gate and power loops. This reduces gate voltage overshoot/ringing during fast dV/dt transitions and improves EMI behavior. In practice, this allows the TK12V60W,LVQ to operate stably at higher frequencies without added gate resistors - a key advantage over conventional single-source MOSFETs.
What is the maximum allowable channel temperature for TK12V60W,LVQ?
The TK12V60W,LVQ has a maximum channel temperature (Tch) rating of 150 °C, as specified in its absolute maximum ratings. Operation beyond this limit risks accelerated parametric drift and reduced long-term reliability. The device's Rth(ch-c) of 1.2 °C/W means that maintaining Tc ≤ 25 °C above ambient requires ≤104 W power dissipation - consistent with its rated PD of 104 W at Tc = 25 °C.
Can TK12V60W,LVQ be used in avalanche mode repeatedly?
The TK12V60W,LVQ is rated for single-pulse avalanche energy (EAS) of 93 mJ, tested under defined conditions (VDD = 90 V, L = 18.2 mH, IAR = 3 A). It is not characterized for repetitive avalanche operation. Continuous or repeated avalanche stress may cause cumulative degradation. For designs requiring frequent inductive energy clamping, external snubbers or active clamping circuits are recommended to keep the TK12V60W,LVQ within its safe operating area.
What is the body diode reverse recovery charge (Qrr) of TK12V60W,LVQ?
The TK12V60W,LVQ exhibits a typical reverse recovery charge (Qrr) of 2.3 µC, measured at IDR = 5.8 A, VGS = 0 V, and dIDR/dt = 100 A/µs. This low Qrr value contributes to reduced commutation losses in quasi-resonant and zero-voltage-switching topologies. The TK12V60W,LVQ's body diode also achieves a typical trr of 250 ns, supporting efficient operation in high-frequency flyback and LLC converters.
TK12V60W,LVQ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- DTMOSIV
- Package/Case:
- 4-VSFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 11.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 300mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id:
- 3.7V @ 600µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 890 pF @ 300 V
- FET Feature:
- -
- Power Dissipation (Max):
- 104W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 4-DFN-EP (8x8)
TK12V60W,LVQ FAQ
1.How can I place an order for TK12V60W,LVQ through Aetrix?
Please submit a Request for Quotation (RFQ) for TK12V60W,LVQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TK12V60W,LVQ reliable?
The price and inventory of TK12V60W,LVQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK12V60W,LVQ is usually 5 days.
3.What payment methods are accepted for TK12V60W,LVQ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK12V60W,LVQ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TK12V60W,LVQ?
TK12V60W,LVQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TK12V60W,LVQ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TK12V60W,LVQ?
For technical support, including TK12V60W,LVQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK12V60W,LVQ requirements.
6.How does Aetrix verify that TK12V60W,LVQ is sourced from the original manufacturer or authorized distributors?
All TK12V60W,LVQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK12V60W,LVQ meets industry standards.
7.What is the process for return or replacement of TK12V60W,LVQ?
All TK12V60W,LVQ units undergo pre-shipment inspection (PSI). If there is an issue with TK12V60W,LVQ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TK12V60W,LVQ part is unused and in its original packaging.
Return procedure for TK12V60W,LVQ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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