Toshiba Semiconductor and Storage TK13A50DA(STA4,Q,M

Overview

TK13A50DA from TOSHIBA is a silicon N-channel power MOSFET in the π-MOSⅦ family, designed for high-efficiency switching regulator applications. It features 500 V drain-source breakdown voltage, 0.39 Ω typical R_DS(ON) at V_GS = 10 V and I_D = 6.3 A, 6.0 S typical forward transfer admittance, 12.5 A continuous drain current, and SC-67 (2-10U1B) package with isolated heatsink-capable construction.

For engineers reviewing the TK13A50DA datasheet, TK13A50DA pinout, TK13A50DA application, or TK13A50DA equivalent, key selection criteria include avalanche ruggedness (416 mJ single-pulse), thermal resistance (2.78 °C/W channel-to-case), gate charge profile (28 nC total), body diode recovery (1300 ns trr), and RoHS-compliant marking underlined [[G]]/RoHS COMPATIBLE.

Technical Context

This MOSFET operates in enhancement mode with a gate threshold voltage range of 2.0–4.0 V, enabling reliable turn-on using standard 3.3 V or 5 V logic-level drivers when combined with sufficient gate drive strength. Its low R_DS(ON) and high |Y_fs| support high-current, high-frequency DC-DC conversion while minimizing conduction and switching losses.

The device integrates an intrinsic fast-recovery body diode (V_DSF = −1.7 V at I_DR = 12.5 A) and is rated for repetitive avalanche energy (4.5 mJ), making it suitable for hard-switched topologies where inductive energy dissipation occurs across the MOSFET. Thermal design must respect T_ch ≤ 150 °C and derate PD linearly above 25 °C case temperature.

Key Specifications

Pinout & Package

TK13A50DA uses the SC-67 (JEITA) / 2-10U1B (Toshiba) package - a through-hole, isolated-tab power package with integral heatsink interface and 1.7 g mass. The tab is electrically connected to the drain terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP12NK50ZFP and IXTP12N50L2, TK13A50DA offers superior avalanche ruggedness and lower on-resistance in a thermally optimized SC-67 package-critical for unclamped inductive switching and space-constrained industrial power supplies.

Availability

TK13A50DA is available at Aetrix Electronics and suitable for AC-DC power adapters, industrial UPS systems, and LED streetlight drivers requiring stable component supply, long-lifecycle support, and traceable RoHS-compliant sourcing.

Supply support for TK13A50DA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on efficiency, reliability, and industrial-grade performance.

The TK13A50DA belongs to Toshiba's π-MOSⅦ high-voltage power MOSFET product line, engineered specifically for ruggedized switching regulator applications demanding high avalanche tolerance, low conduction loss, and stable parametric behavior over temperature.

FAQ

What is the maximum continuous drain current rating for TK13A50DA at 25°C case temperature?

The TK13A50DA has a DC drain current rating of 12.5 A at T_c = 25°C. This value assumes proper heatsinking to maintain channel temperature ≤150°C. At elevated case temperatures, current must be derated linearly per the Safe Operating Area curve - for example, at T_c = 100°C, the usable continuous current drops to approximately 6.5 A. Always verify thermal design using R_th(ch-c) = 2.78 °C/W and actual ambient/heatsink conditions before finalizing the TK13A50DA implementation.

Does TK13A50DA support logic-level gate drive?

The TK13A50DA is not a logic-level MOSFET. Its gate threshold voltage ranges from 2.0 V to 4.0 V, but full enhancement requires V_GS ≥ 10 V to achieve the specified R_DS(ON) of 0.39 Ω. Driving TK13A50DA with only 3.3 V or 5 V will result in significantly higher on-resistance (>2 Ω) and excessive conduction loss. A dedicated gate driver capable of delivering ≥10 V with ≥1 A peak current is required for optimal performance of TK13A50DA in switching applications.

What is the significance of the underlined lot number on TK13A50DA marking?

An underlined lot number on TK13A50DA indicates [[G]]/RoHS COMPATIBLE compliance per EU Directive 2011/65/EU, confirming lead-free terminations and restricted substance control. Non-underlined markings denote [[Pb]]/INCLUDES > MCV (lead-containing). Both variants share identical electrical and thermal specifications. For new designs targeting RoHS markets, only underlined units should be selected - the TK13A50DA part number itself does not encode compliance; visual inspection of the marking is mandatory to confirm RoHS status of each received TK13A50DA unit.

Can TK13A50DA be used in synchronous rectification circuits?

Yes, TK13A50DA can be used in synchronous rectification, particularly on secondary-side high-voltage rails (e.g., 48 V or 54 V outputs), due to its low R_DS(ON) and integrated body diode with V_DSF = −1.7 V at 12.5 A. However, its 1300 ns reverse recovery time (t_rr) is slower than dedicated sync rectifiers, so careful timing control is needed to avoid shoot-through. For best results, pair TK13A50DA with a gate driver featuring adaptive dead-time control and validate cross-conduction margins in the final TK13A50DA-based design.

How is avalanche capability tested for TK13A50DA, and what does 416 mJ represent?

The 416 mJ single-pulse avalanche energy (E_AS) for TK13A50DA is measured under standardized conditions: V_DD = 90 V, initial T_ch = 25°C, L = 4.53 mH, R_G = 25 Ω, and I_AR = 12.5 A. It quantifies the maximum inductive energy the device can absorb in one event without failure. This rating validates TK13A50DA for use in unclamped inductive switching (e.g., flyback transformers) where leakage energy must be dissipated internally - a key reliability advantage over non-rated MOSFETs like TK13A50DA's alternatives.