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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK13A55DA(STA4,QM)

Name: TK13A55DA(STA4,QM)
Brand: Toshiba Semiconductor and Storage
SKU: TK13A55DA(STA4,QM)
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK13A55DA(STA4,QM)

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: TK13A55DA(STA4,QM).pdf

Description:: MOSFET N-CH 550V 12.5A TO220SIS

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Inventory:9,049

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Product details

Overview

TK13A55DA(STA4,QM) from Toshiba is a silicon N-channel power MOSFET in π-MOSⅦ technology, designed for high-voltage switching regulator applications. It features 550 V drain-source breakdown voltage (V_(BR)DSS), 0.32 Ω typical R_DS(ON) at V_GS = 10 V and I_D = 6.3 A, 6.0 S typical forward transfer admittance, and 310 mJ single-pulse avalanche energy - enabling robust operation in offline SMPS primary-side switches.

For engineers reviewing the TK13A55DA(STA4,QM) datasheet, TK13A55DA(STA4,QM) pinout, TK13A55DA(STA4,QM) application, or TK13A55DA(STA4,QM) equivalent, key selection criteria include verified avalanche ruggedness (E_AS = 310 mJ), thermal resistance (R_th(ch-c) = 2.78 °C/W), gate charge profile (Q_g = 38 nC), and JEITA SC-67 package compatibility with through-hole mounting.

Technical Context

This MOSFET operates in enhancement mode with a gate threshold voltage range of 2.0–4.0 V (V_DS = 10 V, I_D = 1 mA) and supports high-speed switching via low Crss (9 pF) and fast turn-on/turn-off times (t_on = 80 ns, t_off = 110 ns). Its π-MOSⅦ process delivers optimized trade-offs between conduction loss and switching loss for fixed-frequency flyback and forward converters.

The device integrates an intrinsic body diode with V_DSF = −1.7 V at I_DR = 12.5 A and t_rr = 1300 ns, supporting discontinuous conduction mode (DCM) operation. Avalanche-rated design ensures reliable energy absorption during inductive load switching transients without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	550 V - Withstands full mains rectified voltage in universal-input (85–265 VAC) offline SMPS designs.
R_DS(ON)	0.32 Ω (typ.) - Minimizes conduction loss at 6.3 A DC current, reducing heatsink requirements.
\|Y_fs\|	6.0 S (typ.) - High transconductance enables strong gate drive responsiveness and stable loop control.
E_AS	310 mJ - Rated avalanche energy allows safe operation under inductive switching stress without failure.
Q_g	38 nC - Total gate charge determines required driver strength and switching loss at 100 kHz+ frequencies.
R_th(ch-c)	2.78 °C/W - Enables 45 W continuous dissipation with modest heatsinking at T_c = 25°C.
C_iss	1800 pF - Input capacitance impacts gate drive power and zero-voltage switching feasibility.

Pinout & Package

TK13A55DA(STA4,QM) uses the JEITA SC-67 (Toshiba 2-10U1B) through-hole package: insulated metal tab, 3-pin layout, 1.7 g mass, and 15.0 mm × 13.0 mm footprint. Thermal path optimized for case-mounted heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives voltage-controlled signal to modulate channel conductivity; requires <±30 V rating and low-impedance drive.
2 (Drain)	High-side power terminal	Connected to primary winding of transformer or bulk capacitor; carries full switched current and withstands 550 V.
3 (Source)	Reference and return path	Serves as common reference for gate drive and current sensing; tied to power ground in non-isolated topologies.

Key Features

Feature	Design Value
π-MOSⅦ process technology	Optimized cell structure reduces R_DS(ON) × Q_g figure-of-merit for improved efficiency in 65–130 kHz SMPS.
Single-pulse avalanche rating	310 mJ validated per JEDEC JESD24-11 test conditions - eliminates need for external clamping in most flyback designs.
Low Crss (9 pF)	Minimizes Miller effect, improving noise immunity and enabling stable operation with standard gate drivers.
Enhancement-mode threshold	V_th = 2.0–4.0 V ensures reliable turn-off at 0 V gate bias and avoids spurious conduction during startup.
RoHS-compliant marking	[[G]]/RoHS COMPATIBLE label confirms lead-free termination and compliance with EU Directive 2011/65/EU.

Applications

Offline AC-DC Adapters	Industrial SMPS Power Supplies
Use Scenario: 36 W universal-input (85–265 VAC) flyback adapter for industrial HMIs and PLC I/O modules. IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer to secondary winding; operated at 65 kHz with DCM. Use Value: 550 V V_(BR)DSS and 310 mJ E_AS ensure margin against line surges and transformer leakage spikes without snubber redesign.	Use Scenario: 120 W forward-converter-based 24 V/5 A power supply for factory automation controllers. IC Role / Device Role / Timing Role: Main switching transistor in primary bridge-leg configuration; driven by UC3845-based controller. Use Value: 0.32 Ω R_DS(ON) and 2.78 °C/W R_th(ch-c) enable >89% efficiency at full load with passive heatsinking.
LED Driver Power Stages	UPS Inverter Half-Bridge
Use Scenario: Constant-current 48 V/1.5 A LED driver for outdoor signage with surge immunity to ±2 kV (IEC 61000-4-5). IC Role / Device Role / Timing Role: High-side switch in buck-derived topology; handles repetitive 100 μs overcurrent events. Use Value: Repetitive avalanche rating (E_AR = 4.5 mJ) and 12.5 A I_AR support robust short-circuit recovery without latch-up.	Use Scenario: 1 kVA online UPS with 50 Hz output and bidirectional DC-link switching. IC Role / Device Role / Timing Role: Low-side switch in half-bridge inverter stage; commutated at 16 kHz PWM with dead-time control. Use Value: Fast t_off = 110 ns and low Q_gd/Q_gs ratio (14/24 nC) reduce cross-conduction losses and improve THD.

Offline AC-DC Adapters

Industrial SMPS Power Supplies

Use Scenario: 36 W universal-input (85–265 VAC) flyback adapter for industrial HMIs and PLC I/O modules.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer to secondary winding; operated at 65 kHz with DCM.

Use Value: 550 V V_(BR)DSS and 310 mJ E_AS ensure margin against line surges and transformer leakage spikes without snubber redesign.

Use Scenario: 120 W forward-converter-based 24 V/5 A power supply for factory automation controllers.

IC Role / Device Role / Timing Role: Main switching transistor in primary bridge-leg configuration; driven by UC3845-based controller.

Use Value: 0.32 Ω R_DS(ON) and 2.78 °C/W R_th(ch-c) enable >89% efficiency at full load with passive heatsinking.

LED Driver Power Stages

UPS Inverter Half-Bridge

Use Scenario: Constant-current 48 V/1.5 A LED driver for outdoor signage with surge immunity to ±2 kV (IEC 61000-4-5).

IC Role / Device Role / Timing Role: High-side switch in buck-derived topology; handles repetitive 100 μs overcurrent events.

Use Value: Repetitive avalanche rating (E_AR = 4.5 mJ) and 12.5 A I_AR support robust short-circuit recovery without latch-up.

Use Scenario: 1 kVA online UPS with 50 Hz output and bidirectional DC-link switching.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge inverter stage; commutated at 16 kHz PWM with dead-time control.

Use Value: Fast t_off = 110 ns and low Q_gd/Q_gs ratio (14/24 nC) reduce cross-conduction losses and improve THD.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP13NK55ZFP	550 V V_DSS, R_DS(ON) = 0.38 Ω (typ.), Zener-protected gate, TO-220FP package	Higher R_DS(ON) increases conduction loss; integrated gate protection simplifies drive circuitry	Preferred where gate robustness outweighs efficiency; not drop-in due to different pinout and thermal pad layout
IXTH12N50L	500 V V_DSS, R_DS(ON) = 0.42 Ω (typ.), 200 mJ E_AS, TO-247 package	Lower voltage rating limits use to 230 VAC-only systems; larger package offers better thermal performance	Consider only for lower-input-voltage designs requiring higher thermal margin; requires PCB layout change

Compared with STP13NK55ZFP and IXTH12N50L, TK13A55DA(STA4,QM) provides superior avalanche ruggedness and lower on-resistance in a compact SC-67 package - making it optimal for space-constrained, universal-input SMPS where reliability under transient stress is critical.

Availability

TK13A55DA(STA4,QM) is available at Aetrix Electronics and suitable for offline AC-DC adapters, industrial SMPS power supplies, and LED driver power stages requiring stable component supply across multi-year production cycles.

Supply support for TK13A55DA(STA4,QM) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

TK13A55DA(STA4,QM) belongs to Toshiba's π-MOSⅦ high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching regulators in industrial and commercial power conversion systems.

FAQ

What is the maximum continuous drain current rating for TK13A55DA(STA4,QM) at 25°C case temperature?

The maximum continuous drain current (I_D) for TK13A55DA(STA4,QM) is 12.5 A at T_c = 25°C, as specified in the Absolute Maximum Ratings table. This rating assumes proper heatsinking to maintain channel temperature ≤150°C and accounts for thermal resistance R_th(ch-c) = 2.78 °C/W. At elevated case temperatures, derating is required per the PD–T_c curve in the datasheet.

Does TK13A55DA(STA4,QM) have built-in gate protection?

No, TK13A55DA(STA4,QM) does not integrate gate protection diodes or Zener clamps. Its gate-source voltage rating is ±30 V, and gate leakage current is limited to ±1 μA at V_GS = ±30 V. External gate protection - such as a 15–18 V Zener clamp between gate and source - is recommended in noisy environments or when using high-impedance gate drives to prevent ESD or overvoltage damage.

Can TK13A55DA(STA4,QM) be used in synchronous rectification topologies?

No, TK13A55DA(STA4,QM) is not suitable for synchronous rectification. It is a standard N-channel enhancement-mode MOSFET optimized for high-voltage switching, not low-V_DS conduction. Its body diode reverse recovery time (t_rr = 1300 ns) and forward voltage (V_DSF = −1.7 V) are not optimized for fast, low-loss rectification; dedicated SR controllers and logic-level MOSFETs with t_rr < 50 ns are required instead.

What is the gate threshold voltage range for TK13A55DA(STA4,QM), and how does it affect drive circuit design?

The gate threshold voltage (V_th) for TK13A55DA(STA4,QM) is 2.0–4.0 V at V_DS = 10 V and I_D = 1 mA. This range ensures reliable turn-on with standard 10 V gate drive while preventing accidental conduction from noise or leakage. Drive circuits must supply ≥5 V to guarantee full enhancement and avoid linear-mode operation; 12–15 V is recommended for margin and fast switching.

Is TK13A55DA(STA4,QM) compliant with RoHS and REACH regulations?

Yes, TK13A55DA(STA4,QM) is RoHS-compatible as indicated by the [[G]]/RoHS COMPATIBLE marking on the device body, confirming compliance with EU Directive 2011/65/EU. Toshiba also confirms adherence to REACH SVHC requirements. Full substance declarations and CoC documentation are available upon request from authorized Toshiba distributors or Aetrix Electronics' technical support team for TK13A55DA(STA4,QM).

TK13A55DA(STA4,QM) Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: π-MOSVII

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 550 V

Current - Continuous Drain (Id) @ 25°C:: 12.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 480mOhm @ 6.3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 45W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220SIS

TK13A55DA(STA4,QM) FAQ

1.How can I place an order for TK13A55DA(STA4,QM) through Aetrix?

Please submit a Request for Quotation (RFQ) for TK13A55DA(STA4,QM) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK13A55DA(STA4,QM) reliable?

The price and inventory of TK13A55DA(STA4,QM) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK13A55DA(STA4,QM) is usually 5 days.

3.What payment methods are accepted for TK13A55DA(STA4,QM)?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK13A55DA(STA4,QM) transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK13A55DA(STA4,QM)?

TK13A55DA(STA4,QM) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK13A55DA(STA4,QM) order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK13A55DA(STA4,QM)?

For technical support, including TK13A55DA(STA4,QM) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK13A55DA(STA4,QM) requirements.

6.How does Aetrix verify that TK13A55DA(STA4,QM) is sourced from the original manufacturer or authorized distributors?

All TK13A55DA(STA4,QM) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK13A55DA(STA4,QM) meets industry standards.

7.What is the process for return or replacement of TK13A55DA(STA4,QM)?

All TK13A55DA(STA4,QM) units undergo pre-shipment inspection (PSI). If there is an issue with TK13A55DA(STA4,QM), returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK13A55DA(STA4,QM) part is unused and in its original packaging.

Return procedure for TK13A55DA(STA4,QM):

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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