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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK13E25D,S1X(S

Name: TK13E25D,S1X(S
Brand: Toshiba Semiconductor and Storage
SKU: TK13E25D,S1X(S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK13E25D,S1X(S

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: TK13E25D,S1X(S.pdf

Description:: MOSFET N-CH 250V 13A TO220-3

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Product details

Overview

TK13E25D,S1X(S from Toshiba is a silicon N-channel power MOSFET in the π-MOSⅣ family, designed for high-efficiency switching in DC-DC converters and offline SMPS. It delivers 13 A continuous drain current at 250 V V_DSS, with R_DS(ON) = 0.19 Ω (typ.) at V_GS = 10 V and operates reliably up to 150 °C channel temperature.

For engineers reviewing the TK13E25D,S1X(S datasheet, TK13E25D,S1X(S pinout, TK13E25D,S1X(S application, or TK13E25D,S1X(S equivalent, this device serves as a robust, thermally efficient switch in mid-power industrial and consumer power supplies where low conduction loss and avalanche ruggedness are critical.

Technical Context

This enhancement-mode MOSFET features a gate threshold voltage of 1.5–3.5 V (V_DS = 10 V, I_D = 1 mA), enabling direct drive from standard logic-level controllers. Its 78 mJ single-pulse avalanche energy rating supports reliable operation under inductive load switching stress.

Thermal design is enabled by low channel-to-case resistance (R_th(ch-c) = 1.23 °C/W) and TO-220 package integration with drain-connected heatsink tab. Dynamic parameters include C_iss = 1100 pF and Q_g = 25 nC, indicating moderate gate drive requirements for 100 kHz-class switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	250 V - Supports 200 V DC bus designs with 25% margin for transient overvoltage in offline flyback and forward converters.
R_DS(ON)	0.19 Ω (typ.) at V_GS = 10 V - Enables <1.6 W conduction loss at 9 A DC, reducing thermal load in compact power stages.
I_D (DC)	13 A - Sustains continuous output current for 150–200 W isolated power supplies without forced airflow.
E_AS	78 mJ - Withstands single inductive energy spikes up to 78 mJ without failure, easing snubber design in relay or motor drive interfaces.
Q_g	25 nC - Requires ~0.25 mC total gate charge per switching cycle at 10 kHz, compatible with standard MOSFET drivers like TC4420.
C_iss	1100 pF - Limits high-frequency gate oscillation risk; pairs well with 5–10 Ω gate resistors for controlled turn-on/turn-off.
T_ch max	150 °C - Allows operation in sealed enclosures up to ambient 85 °C when mounted on ≥25 cm² copper pour with thermal via array.

Pinout & Package

TK13E25D,S1X(S is housed in a TO-220 package (TOSHIBA designation: 2-10X1A), with drain connected to the metal tab for direct heatsinking. The plastic body provides electrical isolation between tab and leads, and the device weighs 1.93 g (typ.).

Pin/Terminal	Circuit Role	Design Meaning
1: Gate (G)	Control input terminal	High-impedance node requiring <1 µA leakage; sensitive to ESD-must be handled with grounded wrist strap and anti-static mat.
2: Drain (D) (Heatsink)	Main current path output / thermal interface	Internally bonded to metal tab; electrically common with tab-requires insulating washer if mounted to grounded heatsink.
3: Source (S)	Reference node for gate drive and current return	Serves as local ground reference for driver ICs; layout must minimize source inductance to prevent false turn-on during dI/dt events.

Key Features

Feature	Design Value
Low R_DS(ON)	0.19 Ω typ. reduces conduction losses by >30% vs. legacy 0.27 Ω equivalents at 6.5 A, directly improving efficiency in 12 V output rails.
Avalanche-rated	78 mJ single-pulse rating enables robust operation in unclamped inductive switching-no external clamp diode needed in many relay driver applications.
Enhancement-mode V_th	1.5–3.5 V range ensures reliable turn-on with 3.3 V or 5 V microcontroller GPIO, eliminating need for level-shifting gate drivers in low-voltage control systems.
Low IDSS leakage	10 µA max at 250 V V_DS prevents significant standby power loss in always-on auxiliary supplies, supporting Energy Star Level VI compliance.

Applications

AC-DC Adapter Power Stage	Industrial DC-DC Converter
Use Scenario: Primary-side switch in 65 W universal-input flyback converter for laptop adapters. IC Role / Device Role / Timing Role: Main power switch synchronized to PWM controller (e.g., UCC28704) operating at 66 kHz. Use Value: Low R_DS(ON) and 250 V rating enable >88% full-load efficiency while meeting IEC 61000-3-2 harmonic limits without active PFC stage.	Use Scenario: Isolated 24 V → 5 V/10 A DC-DC module in PLC backplane power distribution. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward topology with external gate driver (e.g., LM5113). Use Value: 13 A DC rating and 150 °C T_ch allow continuous operation at 85 °C ambient without derating, supporting fanless industrial enclosure design.
LED Driver Switching Stage	Motor Control Interface
Use Scenario: High-side switch in constant-current LED driver for streetlight modules (36–72 V string, 1.5 A). IC Role / Device Role / Timing Role: PWM-controlled power switch modulating LED current at 1–20 kHz to avoid audible noise. Use Value: Fast 20 ns fall time and low Q_gd (8.5 nC) ensure clean current transitions, minimizing LED current ripple and thermal stress on emitters.	Use Scenario: Low-side switch in brushed DC motor H-bridge for HVAC damper actuator (24 V, 8 A peak). IC Role / Device Role / Timing Role: One quadrant switch controlling motor direction and braking via PWM duty cycle. Use Value: Avalanche ruggedness absorbs inductive kickback during rapid deceleration, eliminating need for external TVS diodes in cost-sensitive consumer-grade actuators.

AC-DC Adapter Power Stage

Industrial DC-DC Converter

Use Scenario: Primary-side switch in 65 W universal-input flyback converter for laptop adapters.

IC Role / Device Role / Timing Role: Main power switch synchronized to PWM controller (e.g., UCC28704) operating at 66 kHz.

Use Value: Low R_DS(ON) and 250 V rating enable >88% full-load efficiency while meeting IEC 61000-3-2 harmonic limits without active PFC stage.

Use Scenario: Isolated 24 V → 5 V/10 A DC-DC module in PLC backplane power distribution.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward topology with external gate driver (e.g., LM5113).

Use Value: 13 A DC rating and 150 °C T_ch allow continuous operation at 85 °C ambient without derating, supporting fanless industrial enclosure design.

LED Driver Switching Stage

Motor Control Interface

Use Scenario: High-side switch in constant-current LED driver for streetlight modules (36–72 V string, 1.5 A).

IC Role / Device Role / Timing Role: PWM-controlled power switch modulating LED current at 1–20 kHz to avoid audible noise.

Use Value: Fast 20 ns fall time and low Q_gd (8.5 nC) ensure clean current transitions, minimizing LED current ripple and thermal stress on emitters.

Use Scenario: Low-side switch in brushed DC motor H-bridge for HVAC damper actuator (24 V, 8 A peak).

IC Role / Device Role / Timing Role: One quadrant switch controlling motor direction and braking via PWM duty cycle.

Use Value: Avalanche ruggedness absorbs inductive kickback during rapid deceleration, eliminating need for external TVS diodes in cost-sensitive consumer-grade actuators.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP14NF25	R_DS(ON) = 0.22 Ω (typ.), V_DSS = 250 V, TO-220, but higher Q_g = 32 nC and no guaranteed E_AS spec.	Lacks documented avalanche energy rating-requires external clamping in inductive loads.	Acceptable for non-avalanche-critical linear-regulated supplies; not recommended for relay/motor drive without added protection.
IRFIB730PBF	R_DS(ON) = 0.20 Ω (typ.), V_DSS = 250 V, TO-220AB, but lower I_D = 9.5 A and higher C_iss = 1350 pF.	Lower current rating and higher input capacitance increase gate drive burden and reduce switching speed.	Suitable only for <70 W designs with relaxed thermal margins; requires larger gate resistor to damp ringing.

Compared with STP14NF25 and IRFIB730PBF, TK13E25D,S1X(S offers superior avalanche ruggedness and lower gate charge, enabling simpler, more robust designs in 100–150 W switching power stages without compromising thermal headroom or EMI performance.

Availability

TK13E25D,S1X(S is available at Aetrix Electronics and suitable for AC-DC adapters, industrial DC-DC converters, LED drivers, and motor control interfaces requiring stable component supply across multi-year production cycles.

Supply support for TK13E25D,S1X(S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with decades of expertise in discrete transistor reliability and thermal design.

The TK13E25D,S1X(S belongs to Toshiba's π-MOSⅣ series of high-voltage N-channel MOSFETs, engineered specifically for high-efficiency, high-reliability switching in industrial and consumer power conversion systems.

FAQ

What is the maximum continuous drain current for TK13E25D,S1X(S at 100 °C case temperature?

The TK13E25D,S1X(S supports 13 A DC drain current at T_c = 25 °C. At T_c = 100 °C, derating applies per the Safe Operating Area curve (Fig. 8.14): maximum continuous I_D drops to approximately 7.2 A due to thermal limitation, assuming R_th(ch-c) = 1.23 °C/W and T_ch ≤ 150 °C. Always verify with actual board thermal simulation.

Does TK13E25D,S1X(S have a built-in body diode, and what are its reverse recovery characteristics?

Yes, TK13E25D,S1X(S includes an integral body diode with V_DSF = −1.7 V (max) at I_DR = 13 A and t_rr = 180 ns (typ.) at dI_DR/dt = 100 A/µs. This fast recovery enables use in synchronous rectification and freewheeling paths, though external Schottky diodes may still be preferred for ultra-low-loss 100+ kHz designs.

Can TK13E25D,S1X(S be driven directly from a 3.3 V microcontroller GPIO without a gate driver?

TK13E25D,S1X(S has V_th = 1.5–3.5 V, so it will turn on with 3.3 V, but full enhancement (to achieve R_DS(ON) ≤ 0.25 Ω) requires V_GS ≥ 10 V. Driving directly from 3.3 V results in high R_DS(ON) (>1 Ω), excessive heating, and unreliable switching. A level-shifting gate driver (e.g., TC4427) is required for production use of TK13E25D,S1X(S.

What is the meaning of "S1X(S" in the full part number TK13E25D,S1X(S?

The suffix "S1X(S" denotes Toshiba's internal packaging and marking variant: "S1X" indicates tape-and-reel packaging per JEDEC standard, and "(S" specifies the TO-220AB package with drain-tab isolation and standard lead finish. This exact variant is documented in Toshiba's 2014 datasheet Rev. 2.0 and corresponds to orderable part TK13E25D,S1X(S.

Is TK13E25D,S1X(S RoHS-compliant and halogen-free?

Yes, TK13E25D,S1X(S complies with EU RoHS Directive 2011/65/EU and is halogen-free per Toshiba's environmental specifications. Lead finish is matte tin, and all materials meet JIS C 0950:2005 standards. Full compliance documentation-including test reports-is available upon request from Aetrix Electronics or Toshiba's official portal.

TK13E25D,S1X(S Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 250mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1100 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 102W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

TK13E25D,S1X(S FAQ

1.How can I place an order for TK13E25D,S1X(S through Aetrix?

Please submit a Request for Quotation (RFQ) for TK13E25D,S1X(S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK13E25D,S1X(S reliable?

The price and inventory of TK13E25D,S1X(S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK13E25D,S1X(S is usually 5 days.

3.What payment methods are accepted for TK13E25D,S1X(S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK13E25D,S1X(S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK13E25D,S1X(S?

TK13E25D,S1X(S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK13E25D,S1X(S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK13E25D,S1X(S?

For technical support, including TK13E25D,S1X(S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK13E25D,S1X(S requirements.

6.How does Aetrix verify that TK13E25D,S1X(S is sourced from the original manufacturer or authorized distributors?

All TK13E25D,S1X(S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK13E25D,S1X(S meets industry standards.

7.What is the process for return or replacement of TK13E25D,S1X(S?

All TK13E25D,S1X(S units undergo pre-shipment inspection (PSI). If there is an issue with TK13E25D,S1X(S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK13E25D,S1X(S part is unused and in its original packaging.

Return procedure for TK13E25D,S1X(S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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