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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK14A55D(STA4,Q,M)

Name: TK14A55D(STA4,Q,M)
Brand: Toshiba Semiconductor and Storage
SKU: TK14A55D(STA4,Q,M)
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK14A55D(STA4,Q,M)

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: TK14A55D(STA4,Q,M).pdf

Description:: MOSFET N-CH 550V 14A TO220SIS

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Product details

Overview

TK14A55D(STA4,Q,M) from Toshiba is a silicon N-channel power MOSFET in the π-MOSⅦ family, designed for high-voltage switching regulator applications. It features 550 V drain-source breakdown voltage (V_(BR)DSS), 14 A continuous drain current (I_D), and low R_DS(ON) of 0.31 Ω (typ.) at V_GS = 10 V - enabling efficient DC-DC conversion in industrial SMPS and AC-DC adapters.

For engineers reviewing the TK14A55D(STA4,Q,M) datasheet, TK14A55D(STA4,Q,M) pinout, TK14A55D(STA4,Q,M) application, or TK14A55D(STA4,Q,M) equivalent, key selection criteria include avalanche ruggedness (E_AS = 521 mJ), thermal resistance (R_th(ch-c) = 2.5 °C/W), gate threshold range (2.0–4.0 V), and RoHS-compliant SC-67 package with verified 3-pin terminal assignment.

Technical Context

This MOSFET operates in enhancement mode with a gate threshold voltage between 2.0 V and 4.0 V, ensuring reliable turn-on under standard 5 V or 10 V gate drive. Its π-MOSⅦ process delivers high forward transfer admittance (|Y_fs| = 6.5 S typ.) and low output capacitance (C_oss = 250 pF), supporting fast switching in hard-switched topologies.

The device integrates an intrinsic body diode with reverse recovery charge Q_rr = 20 μC and t_rr = 1600 ns, and is rated for repetitive avalanche energy (E_AR = 5.0 mJ). Thermal design must respect T_ch ≤ 150 °C, enforced by R_th(ch-c) = 2.5 °C/W and derated SOA curves at elevated case temperatures.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	550 V - supports primary-side switching in 400 V DC bus and universal-input offline SMPS
R_DS(ON)	0.31 Ω (typ.) at V_GS = 10 V - limits conduction loss to ≤ 61 W at I_D = 14 A
I_D (continuous)	14 A - enables ≥200 W power handling with adequate heatsinking
E_AS	521 mJ - withstands single-pulse inductive energy without failure in flyback or LLC resonant circuits
C_iss/C_oss	2300 pF / 250 pF - low C_oss reduces turn-off loss; high C_iss requires robust gate driver current capability
Q_g	40 nC - determines gate drive power requirement (~1.2 mW per MHz at 12 V drive)
T_ch max	150 °C - sets maximum junction temperature limit for reliability-aware thermal design

Pinout & Package

TK14A55D(STA4,Q,M) uses the SC-67 (Toshiba 2-10U1B) surface-mount package with isolated tab, rated for 1.7 g mass and JEITA-compliant footprint. The drain-connected tab provides low-inductance thermal path to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives voltage-controlled signal; threshold 2.0–4.0 V; ±30 V absolute max rating
2 (Drain)	High-side power terminal	Connected to drain metallization and exposed tab; carries full load current and withstands 550 V
3 (Source)	Reference and return path	Common node for gate drive reference and current sensing; tied to power ground in most topologies

Key Features

Feature	Design Value
π-MOSⅦ process technology	Enables optimized trade-off between R_DS(ON), Q_g, and C_oss for high-frequency switching up to 200 kHz
Single-pulse avalanche rating	521 mJ at V_DD = 90 V - allows safe operation during transient overvoltage events without external snubbers
Low gate leakage	±1 μA max at V_GS = ±30 V - ensures stable biasing in high-impedance gate networks
Body diode with defined Q_rr	20 μC reverse recovery charge - enables predictable timing in synchronous rectification and freewheeling paths
RoHS-compliant marking	Underlined Lot No. indicates [[G]]/RoHS COMPATIBLE - meets EU Directive 2011/65/EU requirements

Applications

Industrial Switch-Mode Power Supplies	Universal Input AC-DC Adapters
Use Scenario: Primary-side switch in 150–300 W offline flyback or forward converters with universal AC input (85–265 VAC). IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer via transformer primary winding; driven by PWM controller IC. Use Value: 550 V V_(BR)DSS and 521 mJ E_AS ensure margin against line surges and transformer leakage spikes without clamping circuitry.	Use Scenario: Main switching transistor in compact 65–120 W laptop adapter designs operating at 65–130 kHz. IC Role / Device Role / Timing Role: Fast-turning N-channel MOSFET synchronized to controller's gate drive waveform; handles peak currents up to 56 A pulsed. Use Value: 0.31 Ω R_DS(ON) and 40 nC Q_g enable >90% efficiency at full load while maintaining thermal rise below 50 °C on 2-layer PCB.
DC-DC Converters for Telecom Equipment	LED Driver Power Stages
Use Scenario: Isolated DC-DC brick converter (48 V input to 12 V/24 V output) used in base station power systems. IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology; subjected to ZVS conditions and bidirectional current stress. Use Value: Low C_oss (250 pF) and controlled Q_gd/Q_gs ratio support soft-switching transitions, reducing EMI and switching losses.	Use Scenario: Buck-type constant-current LED driver for street lighting (30–100 W), operating from 300 V DC bus derived from PFC stage. IC Role / Device Role / Timing Role: High-side switch modulating LED string current at 1–20 kHz; conducts continuous 14 A with minimal conduction loss. Use Value: R_th(ch-c) = 2.5 °C/W allows direct mounting to aluminum heatsink, sustaining 150 °C channel temperature under ambient 85 °C conditions.

Industrial Switch-Mode Power Supplies

Universal Input AC-DC Adapters

Use Scenario: Primary-side switch in 150–300 W offline flyback or forward converters with universal AC input (85–265 VAC).

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer via transformer primary winding; driven by PWM controller IC.

Use Value: 550 V V_(BR)DSS and 521 mJ E_AS ensure margin against line surges and transformer leakage spikes without clamping circuitry.

Use Scenario: Main switching transistor in compact 65–120 W laptop adapter designs operating at 65–130 kHz.

IC Role / Device Role / Timing Role: Fast-turning N-channel MOSFET synchronized to controller's gate drive waveform; handles peak currents up to 56 A pulsed.

Use Value: 0.31 Ω R_DS(ON) and 40 nC Q_g enable >90% efficiency at full load while maintaining thermal rise below 50 °C on 2-layer PCB.

DC-DC Converters for Telecom Equipment

LED Driver Power Stages

Use Scenario: Isolated DC-DC brick converter (48 V input to 12 V/24 V output) used in base station power systems.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology; subjected to ZVS conditions and bidirectional current stress.

Use Value: Low C_oss (250 pF) and controlled Q_gd/Q_gs ratio support soft-switching transitions, reducing EMI and switching losses.

Use Scenario: Buck-type constant-current LED driver for street lighting (30–100 W), operating from 300 V DC bus derived from PFC stage.

IC Role / Device Role / Timing Role: High-side switch modulating LED string current at 1–20 kHz; conducts continuous 14 A with minimal conduction loss.

Use Value: R_th(ch-c) = 2.5 °C/W allows direct mounting to aluminum heatsink, sustaining 150 °C channel temperature under ambient 85 °C conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP14NK55ZFP	550 V V_(BR)DSS, R_DS(ON) = 0.38 Ω (typ.), TO-220FP package, no avalanche rating specified	Larger package footprint; higher R_DS(ON) increases conduction loss by ~23% at same current	Prefer TK14A55D(STA4,Q,M) where board space, thermal performance, or unclamped inductive switching is critical
IXTH14N50L	500 V V_(BR)DSS, R_DS(ON) = 0.33 Ω (typ.), TO-247 package, E_AS = 320 mJ	Lower voltage rating limits use to ≤400 V DC bus; larger TO-247 requires more PCB area and thermal via count	Choose TK14A55D(STA4,Q,M) for 550 V compliance, SC-67 surface-mount compatibility, and 64% higher avalanche energy

Compared with STP14NK55ZFP and IXTH14N50L, TK14A55D(STA4,Q,M) offers superior voltage margin, lower thermal resistance, and industry-leading single-pulse avalanche ruggedness - making it optimal for compact, high-reliability industrial SMPS where layout space and surge immunity are constrained.

Availability

TK14A55D(STA4,Q,M) is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, universal input AC-DC adapters, and telecom DC-DC converters requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for TK14A55D(STA4,Q,M) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, efficiency, and industrial-grade performance.

TK14A55D(STA4,Q,M) belongs to Toshiba's π-MOSⅦ high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching regulators in industrial and consumer power electronics.

FAQ

What is the gate threshold voltage range for TK14A55D(STA4,Q,M)?

The gate threshold voltage (V_th) of TK14A55D(STA4,Q,M) is specified from 2.0 V to 4.0 V at V_DS = 10 V and I_D = 1 mA. This range ensures consistent turn-on behavior across temperature and process variation, supporting reliable operation with 5 V logic-level gate drivers. The TK14A55D(STA4,Q,M) does not require gate boosting for activation in standard SMPS controllers.

Does TK14A55D(STA4,Q,M) have avalanche capability, and how is it rated?

Yes, TK14A55D(STA4,Q,M) is fully rated for single-pulse avalanche with E_AS = 521 mJ under defined test conditions (V_DD = 90 V, L = 4.6 mH, I_AR = 14 A). It also supports repetitive avalanche energy of 5.0 mJ. This ruggedness allows the TK14A55D(STA4,Q,M) to safely absorb inductive energy during abnormal switching events without external protection components.

What package type and pin configuration does TK14A55D(STA4,Q,M) use?

TK14A55D(STA4,Q,M) uses the SC-67 package (JEITA designation), also known as Toshiba 2-10U1B. It has three terminals: Pin 1 = Gate, Pin 2 = Drain (connected to exposed tab), Pin 3 = Source. The package is surface-mount, RoHS-compliant, and thermally optimized with R_th(ch-c) = 2.5 °C/W.

How does the body diode performance of TK14A55D(STA4,Q,M) compare to standard rectifiers?

The intrinsic body diode of TK14A55D(STA4,Q,M) exhibits V_DSF = −1.7 V at I_DR = 14 A and t_rr = 1600 ns, with Q_rr = 20 μC. While slower than dedicated SiC or fast-recovery diodes, this diode is characterized and usable in non-synchronous flyback or freewheeling applications where cost and integration outweigh ultra-fast recovery needs - a verified feature of the TK14A55D(STA4,Q,M).

Is TK14A55D(STA4,Q,M) suitable for use in automotive applications?

No - TK14A55D(STA4,Q,M) is not qualified for automotive use. Toshiba explicitly excludes automotive applications from its intended use statement, citing requirements for "extraordinarily high levels of quality and/or reliability" and potential safety-critical failure modes. The TK14A55D(STA4,Q,M) is rated for industrial and consumer power electronics only, per Toshiba's product restriction notice.

TK14A55D(STA4,Q,M) Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: π-MOSVII

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 550 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 370mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220SIS

TK14A55D(STA4,Q,M) FAQ

1.How can I place an order for TK14A55D(STA4,Q,M) through Aetrix?

Please submit a Request for Quotation (RFQ) for TK14A55D(STA4,Q,M) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK14A55D(STA4,Q,M) reliable?

The price and inventory of TK14A55D(STA4,Q,M) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK14A55D(STA4,Q,M) is usually 5 days.

3.What payment methods are accepted for TK14A55D(STA4,Q,M)?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK14A55D(STA4,Q,M) transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK14A55D(STA4,Q,M)?

TK14A55D(STA4,Q,M) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK14A55D(STA4,Q,M) order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK14A55D(STA4,Q,M)?

For technical support, including TK14A55D(STA4,Q,M) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK14A55D(STA4,Q,M) requirements.

6.How does Aetrix verify that TK14A55D(STA4,Q,M) is sourced from the original manufacturer or authorized distributors?

All TK14A55D(STA4,Q,M) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK14A55D(STA4,Q,M) meets industry standards.

7.What is the process for return or replacement of TK14A55D(STA4,Q,M)?

All TK14A55D(STA4,Q,M) units undergo pre-shipment inspection (PSI). If there is an issue with TK14A55D(STA4,Q,M), returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK14A55D(STA4,Q,M) part is unused and in its original packaging.

Return procedure for TK14A55D(STA4,Q,M):

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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