Toshiba Semiconductor and Storage TK14A65W5,S5X
- Part No.:
- TK14A65W5,S5X
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
TK14A65W5,S5X.pdf
- Description:
- MOSFET N-CH 650V 13.7A TO220SIS
- Quantity:
- Payment:

- Shipping:

Inventory:2,110
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Product details
Overview
TK14A65W5,S5X from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline SMPS and PFC stages. It delivers 650 V VDSS, 13.7 A ID (DC), RDS(ON) = 0.25 Ω (typ.), and fast reverse recovery (trr = 100 ns typ.) - enabling efficient, compact 65–100 W AC/DC adapters and industrial power supplies.
For engineers reviewing the TK14A65W5,S5X datasheet, TK14A65W5,S5X pinout, TK14A65W5,S5X application, or TK14A65W5,S5X equivalent, key selection criteria include its TO-220SIS package with isolated heatsink, DTMOS™-enabled low conduction loss, avalanche ruggedness (EAS = 231 mJ), and gate threshold compatibility with standard 10 V drive circuits.
Technical Context
This device implements Toshiba's DTMOS™ IV super-junction architecture to achieve high breakdown voltage with low on-resistance and reduced Qg (40 nC typ.). Its internal body diode exhibits controlled reverse recovery (Qrr = 0.6 µC typ., trr = 100 ns) - critical for reducing switching losses and EMI in continuous-conduction-mode (CCM) PFC and QR flyback topologies.
The TK14A65W5,S5X features enhancement-mode operation (Vth = 3–4.5 V), ±30 V VGSS rating, and guaranteed avalanche capability under single-pulse conditions (IAR = 3.7 A, EAS = 231 mJ). Thermal design is supported by Rth(ch-c) = 3.13 °C/W and isolation voltage of 2000 VRMS, enabling direct-mount heatsinking without additional insulation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 650 V - supports universal-input (85–265 VAC) offline converters with margin against line surges and ringing. |
| RDS(ON) | 0.25 Ω (typ.) at VGS = 10 V - reduces conduction loss in 13.7 A DC applications, enabling <1.5 W dissipation at full load. |
| trr | 100 ns (typ.) - minimizes diode reverse recovery loss and associated voltage spikes in hard-switched topologies. |
| EAS | 231 mJ (single-pulse) - ensures robustness against inductive energy transients during overcurrent or short-circuit events. |
| Ciss | 1300 pF (at VDS = 300 V) - enables predictable gate drive requirements and stable switching with standard 10–25 Ω gate resistors. |
| Vth | 3–4.5 V - compatible with 3.3 V/5 V logic-level controllers and provides noise-immune turn-on with sufficient margin below 5 V. |
| Qg | 40 nC (typ.) - balances switching speed and drive loss; enables 100–200 kHz operation with moderate gate driver ICs. |
Pinout & Package
Package: TO-220SIS (JEITA SC-67 / Toshiba 2-10U1S), featuring electrically isolated metal tab rated for 2000 VRMS - allows direct mounting to heatsink without insulating pads or hardware.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control terminal | Receives gate drive signal; requires ≤±30 V swing; low input capacitance (Ciss = 1300 pF) eases drive design. |
| 2 (Drain) | High-side power output | Connected to primary winding or bus rail; rated for 650 V blocking and avalanche energy absorption. |
| 3 (Source) | Power return reference | Serves as local ground reference for gate drive; ties to source of external driver or controller IC. |
Key Features
| Feature | Design Value |
|---|---|
| DTMOS™ Super-Junction Structure | Enables 650 V rating with 0.25 Ω RDS(ON), reducing conduction loss by >30% vs. planar MOSFETs at same voltage class. |
| Fast Body Diode Recovery | trr = 100 ns (typ.) and Qrr = 0.6 µC (typ.) - suppresses voltage overshoot and EMI in bridgeless PFC and synchronous rectification. |
| Isolated Heatsink Mounting | 2000 VRMS isolation between drain and tab - eliminates need for thermal pads or insulators in compact, cost-sensitive designs. |
| Enhancement-Mode Gate Threshold | Vth = 3–4.5 V - ensures reliable turn-on with industry-standard PWM controllers while rejecting noise up to 2 V. |
| Avalanche-Rated Operation | Guaranteed EAS = 231 mJ - permits safe operation under unclamped inductive switching, simplifying protection circuitry. |
Applications
| Server PSU Primary Switch | Industrial AC/DC Adapter |
|---|---|
Use Scenario: High-efficiency 1 kW server power supply operating in CCM PFC + LLC resonant topology. IC Role / Device Role / Timing Role: Main switch in boost PFC stage handling 13.7 A RMS current at 65–100 kHz. Use Value: Low RDS(ON) and fast trr reduce total losses by ~1.2 W per device versus legacy 600 V MOSFETs, improving system efficiency to >96%. |
Use Scenario: 65 W industrial AC/DC adapter with universal input and reinforced isolation. IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant flyback converter with 65 kHz switching frequency. Use Value: Isolated TO-220SIS package enables direct heatsink mounting without creepage/clearance compromises, saving PCB area and BOM cost. |
| LED Driver Power Stage | UPS Inverter Half-Bridge |
Use Scenario: Constant-current LED driver for street lighting with active PFC and 100–200 W output. IC Role / Device Role / Timing Role: High-side switch in interleaved boost PFC, operating at 70 kHz with 10 A peak current. Use Value: Controlled Qrr and dv/dt ruggedness (>50 V/ns) prevent false triggering and improve reliability under high-temperature ambient conditions. |
Use Scenario: 1 kVA online UPS inverter stage converting 400 V DC bus to 230 V AC output. IC Role / Device Role / Timing Role: Upper switch in half-bridge configuration driving transformer primary with 13.7 A pulsed current. Use Value: Single-pulse avalanche rating (EAS = 231 mJ) absorbs energy from transformer leakage inductance during dead-time transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage switching MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP14NK60ZFP | RDS(ON) = 0.38 Ω (typ.), higher Qg = 55 nC, non-isolated TO-220FP package. | Lacks 2000 VRMS isolation; requires insulated mounting hardware and increases thermal resistance. | Preferred where board space permits added insulation and lower-cost sourcing is prioritized over thermal simplicity. |
| IXTH14N65X2 | RDS(ON) = 0.27 Ω (typ.), trr = 120 ns (typ.), TO-247 package with non-isolated tab. | Higher switching loss due to slower diode recovery; larger footprint and no integrated isolation. | Chosen when higher peak current (14 A) and ruggedness outweigh layout and thermal integration benefits of TK14A65W5,S5X. |
Compared with STP14NK60ZFP and IXTH14N65X2, the TK14A65W5,S5X offers superior thermal integration via isolated TO-220SIS, lower conduction loss, and faster diode recovery - making it optimal for space-constrained, high-efficiency offline power supplies where heatsink mounting simplicity and EMI control are critical.
Availability
TK14A65W5,S5X is available at Aetrix Electronics and suitable for server PSUs, industrial AC/DC adapters, LED drivers, and UPS inverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.
Supply support for TK14A65W5,S5X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation is a global semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with core expertise in silicon power MOSFETs and IGBTs.
The TK14A65W5,S5X belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in industrial and computing applications.
FAQ
What is the maximum continuous drain current for TK14A65W5,S5X at Tc = 25 °C?
The TK14A65W5,S5X supports a maximum continuous drain current (ID) of 13.7 A at case temperature Tc = 25 °C. This rating assumes proper heatsinking and adherence to the channel temperature limit of 150 °C. Derating is required above 25 °C case temperature per the Rth(ch-c) = 3.13 °C/W thermal resistance specification.
Does TK14A65W5,S5X have an electrically isolated package?
Yes, the TK14A65W5,S5X uses the TO-220SIS package with 2000 VRMS isolation between the drain and the metal tab. This allows direct mechanical mounting to a heatsink without thermal interface pads or insulating hardware - a key differentiator from standard TO-220 or TO-220FP variants.
What is the typical gate charge requirement for TK14A65W5,S5X?
The TK14A65W5,S5X has a typical total gate charge (Qg) of 40 nC at VDD ≈ 400 V and ID = 13.7 A. This value enables efficient switching at 100–200 kHz using common gate driver ICs like the UCC27531 or TC4420 with 10–25 Ω series resistance.
How does the body diode performance of TK14A65W5,S5X compare to standard MOSFETs?
The TK14A65W5,S5X features a fast-recovery body diode with trr = 100 ns (typ.) and Qrr = 0.6 µC (typ.), significantly better than conventional 650 V planar MOSFETs. This reduces switching loss and voltage overshoot in hard-switched and quasi-resonant topologies where the body diode conducts during dead time.
Is TK14A65W5,S5X compliant with RoHS directives?
Yes, the TK14A65W5,S5X is RoHS-compliant per EU Directive 2011/65/EU. The marking indicates [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]], and environmental compliance details are confirmed in Toshiba's official product documentation and material declarations.
TK14A65W5,S5X Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- DTMOSIV
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 13.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 300mOhm @ 6.9A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 690µA
- Gate Charge (Qg) (Max) @ Vgs:
- 40 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1300 pF @ 300 V
- FET Feature:
- -
- Power Dissipation (Max):
- 40W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220SIS
TK14A65W5,S5X FAQ
1.How can I place an order for TK14A65W5,S5X through Aetrix?
Please submit a Request for Quotation (RFQ) for TK14A65W5,S5X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TK14A65W5,S5X reliable?
The price and inventory of TK14A65W5,S5X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK14A65W5,S5X is usually 5 days.
3.What payment methods are accepted for TK14A65W5,S5X?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK14A65W5,S5X transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TK14A65W5,S5X?
TK14A65W5,S5X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TK14A65W5,S5X order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TK14A65W5,S5X?
For technical support, including TK14A65W5,S5X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK14A65W5,S5X requirements.
6.How does Aetrix verify that TK14A65W5,S5X is sourced from the original manufacturer or authorized distributors?
All TK14A65W5,S5X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK14A65W5,S5X meets industry standards.
7.What is the process for return or replacement of TK14A65W5,S5X?
All TK14A65W5,S5X units undergo pre-shipment inspection (PSI). If there is an issue with TK14A65W5,S5X, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TK14A65W5,S5X part is unused and in its original packaging.
Return procedure for TK14A65W5,S5X:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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