Toshiba Semiconductor and Storage TK14A65W,S5X

Overview

TK14A65W from Toshiba is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline AC-DC power supplies and DC-DC converters. It delivers 650 V V_DSS, 13.7 A continuous drain current, and ultra-low R_DS(ON) of 0.22 Ω (typ.) at V_GS = 10 V, enabling high-efficiency operation in compact 65–100 W SMPS designs.

For engineers reviewing the TK14A65W datasheet, TK14A65W pinout, TK14A65W application, or TK14A65W equivalent, key selection criteria include its TO-220SIS package with isolated source terminal, avalanche ruggedness (E_AS = 231 mJ), gate threshold voltage range (2.5–3.5 V), and diode reverse recovery performance (t_rr = 240 ns, Q_rr = 2.8 µC) in PFC and LLC resonant topologies.

Technical Context

This DTMOS™-IV device uses Toshiba's super-junction structure to achieve low conduction loss while maintaining fast switching and robust dv/dt immunity (≥50 V/ns). Its gate charge profile (Q_g = 35 nC, Q_gd = 14 nC) supports efficient hard-switched operation up to 100 kHz with minimal Miller-induced oscillation risk.

The integrated body diode exhibits controlled reverse recovery with I_rr = 24 A (peak) and low Q_rr, reducing switching losses in bridge-leg configurations. Thermal design is supported by R_th(ch-c) = 3.13 °C/W and T_ch rating up to 150 °C, enabling reliable operation under sustained load in enclosed industrial power modules.

Key Specifications

Pinout & Package

TK14A65W is housed in a TO-220SIS (JEITA SC-67) package with electrically isolated source terminal-enabling direct mounting to heatsinks without insulating pads. The case is connected to the drain, and the source terminal is fully isolated for flexible PCB layout in high-side or floating-source configurations.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with STP14NK60ZFP and IPP65R280C7, TK14A65W provides superior conduction efficiency at 650 V, eliminates thermal interface complexity via TO-220SIS isolation, and offers tighter V_th control - making it optimal for space-constrained, high-reliability offline power where thermal and EMI margins are critical.

Availability

TK14A65W is available at Aetrix Electronics and suitable for AC-DC adapters, industrial SMPS, PFC boost stages, and LED drivers requiring stable component supply across multi-year production cycles.

Supply support for TK14A65W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in high-voltage MOSFET process technology.

TK14A65W belongs to Toshiba's DTMOS™-IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in industrial, medical, and commercial equipment.

FAQ

What is the maximum continuous drain current for TK14A65W at 100°C case temperature?

The TK14A65W supports 13.7 A DC drain current at T_c = 25°C per datasheet Absolute Maximum Ratings. At T_c = 100°C, derating applies: using R_th(ch-c) = 3.13 °C/W and T_ch(max) = 150°C, the allowable I_D drops to approximately 9.2 A to maintain junction temperature within limit. Always confirm with thermal simulation for your specific heatsink and airflow conditions.

Does TK14A65W have a built-in body diode, and what are its reverse recovery characteristics?

Yes, TK14A65W includes an integrated body diode optimized for power conversion. Its reverse recovery time (t_rr) is 240 ns (typ.) with Q_rr = 2.8 µC and peak I_rr = 24 A under specified test conditions (IDR = 6.9 A, dI/dt = 100 A/µs). These values are measured and guaranteed - critical for minimizing turn-on loss in synchronous rectifier and bridge-leg applications.

Can TK14A65W be used in avalanche mode, and what is its rated single-pulse energy?

Yes, TK14A65W is fully rated for single-pulse avalanche operation with E_AS = 231 mJ (typ.) at T_ch = 25°C. This rating is tested and guaranteed per JEDEC standards, enabling robust operation during inductive switching transients without external clamping - essential for flyback and forward converter primary switches.

What is the gate threshold voltage range for TK14A65W, and how does it affect controller compatibility?

The TK14A65W has a gate threshold voltage (V_th) range of 2.5–3.5 V (measured at V_DS = 10 V, I_D = 0.69 mA). This ensures reliable turn-on with standard 5 V or 3.3 V PWM controllers (e.g., UC384x, UCC28070) and clean turn-off at 0 V - eliminating need for negative gate bias or complex level-shifting circuits in most designs.

Is TK14A65W RoHS compliant, and what marking indicates environmental compliance?

Yes, TK14A65W is RoHS compliant. Per Toshiba's marking convention, a line under the lot number on the device surface indicates [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]. Non-underlined markings indicate lead-containing versions. Full compliance documentation and material declarations are available through Toshiba's official product pages and Aetrix Electronics' quality portal.