Toshiba Semiconductor and Storage TK14E65W5,S1X

Overview

TK14E65W5,S1X from Toshiba is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline power supplies and DC-DC converters. It delivers 650 V drain-source breakdown voltage, 0.25 Ω typical R_DS(ON) at V_GS = 10 V, and 100 ns typical reverse recovery time (t_rr), enabling efficient operation in 65–100 kHz flyback and LLC resonant topologies.

For engineers reviewing the TK14E65W5,S1X datasheet, TK14E65W5,S1X pinout, TK14E65W5,S1X application, or TK14E65W5,S1X equivalent, key selection criteria include its TO-220 package thermal performance (R_th(ch-c) = 0.962 °C/W), avalanche ruggedness (E_AS = 194 mJ), gate threshold range (3–4.5 V), and fast diode recovery for reduced snubber losses in hard-switched SMPS designs.

Technical Context

The TK14E65W5,S1X implements Toshiba's DTMOS™ IV super-junction architecture to achieve low conduction loss without sacrificing switching speed. Its optimized charge profile-Q_g = 40 nC, Q_gd/Q_gs1 = 22/13 nC-supports clean turn-on/turn-off with minimal Miller-induced oscillation under 400 V bus conditions.

It features an integrated body diode with controlled reverse recovery (t_rr = 100 ns typ., Q_rr = 0.6 µC) and dv/dt ruggedness ≥50 V/ns, making it suitable for discontinuous conduction mode (DCM) and quasi-resonant (QR) flyback controllers where diode commutation stress is critical.

Key Specifications

Pinout & Package

TK14E65W5,S1X is housed in a through-hole TO-220 package (Toshiba designation: 2-10X1A), with the drain connected internally to the metal tab for direct heatsink mounting and thermal management.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with STP14NK60ZFP and IPP65R045CFD7, the TK14E65W5,S1X offers optimal balance of R_DS(ON), t_rr, and gate charge for 65–100 kHz offline SMPS-delivering superior thermal performance per dollar without demanding high-speed gate drivers.

Availability

TK14E65W5,S1X is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC adapters, high-bay LED drivers, and UPS inverter stages requiring stable component supply and long-term manufacturability.

Supply support for TK14E65W5,S1X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in high-reliability discrete components.

The TK14E65W5,S1X belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-voltage switching power supplies targeting industrial, computing, and lighting applications.

FAQ

What is the maximum continuous drain current rating for TK14E65W5,S1X?

The TK14E65W5,S1X has a maximum continuous drain current (I_D) of 13.7 A at T_c = 25 °C. This rating assumes proper heatsinking to maintain channel temperature ≤150 °C; derating is required above 25 °C case temperature per the R_th(ch-c) = 0.962 °C/W thermal resistance. At T_c = 100 °C, the usable I_D drops to approximately 7.2 A.

Does TK14E65W5,S1X have an integrated body diode, and what are its key recovery characteristics?

Yes, the TK14E65W5,S1X includes an integrated N-channel body diode. Its key recovery specs are: reverse recovery time t_rr = 100 ns (typ.), reverse recovery charge Q_rr = 0.6 µC (typ.), and peak reverse recovery current I_rr = 12 A (typ.) at V_DD = 400 V and -dI_DR/dt = 100 A/µs. These values are measured under standardized conditions and support low-loss operation in DCM and QR flyback topologies.

What is the gate threshold voltage range for TK14E65W5,S1X, and how does it affect drive circuit design?

The TK14E65W5,S1X has a gate threshold voltage (V_th) range of 3.0–4.5 V (measured at V_DS = 10 V, I_D = 0.69 mA). This enhancement-mode range ensures reliable turn-on with standard 5 V logic or 12 V gate drivers without requiring negative bias for shutdown. Designers should ensure gate drive voltage exceeds 6 V to guarantee full enhancement and minimize R_DS(ON) variation across temperature.

Is TK14E65W5,S1X suitable for avalanche-rated applications, and what is its single-pulse energy rating?

Yes, the TK14E65W5,S1X is rated for single-pulse avalanche operation with E_AS = 194 mJ (tested at V_DD = 90 V, T_ch = 25 °C, L = 25 mH, R_G = 25 Ω, I_AR = 3.7 A). This rating validates its use in circuits subject to inductive switching stress, such as PFC boost clamps or relay driving, provided layout minimizes stray inductance and thermal limits are observed.

What package type and pin configuration does TK14E65W5,S1X use, and how is thermal management implemented?

The TK14E65W5,S1X uses a TO-220 package (Toshiba designation 2-10X1A) with three pins: Pin 1 = Gate, Pin 2 = Drain (electrically connected to the metal tab/heatsink), Pin 3 = Source. Thermal management relies on mounting the drain-connected tab to an external heatsink using 0.6 N·m torque; R_th(ch-c) = 0.962 °C/W enables 130 W dissipation at T_c = 25 °C.