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Toshiba Semiconductor and Storage TK14G65W5,RQ
- Part No.:
- TK14G65W5,RQ
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
TK14G65W5,RQ.pdf
- Description:
- MOSFET N-CH 650V 13.7A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,112
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Product details
Overview
TK14G65W5,RQ from Toshiba is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline power supplies and DC-DC converters. It delivers 650 V VDSS, 0.25 Ω RDS(ON) (typ.), 13.7 A ID (DC), and fast 100 ns reverse recovery time, enabling efficient operation in 65–100 W AC-DC adapters and industrial SMPS.
For engineers reviewing the TK14G65W5,RQ datasheet, TK14G65W5,RQ pinout, TK14G65W5,RQ application, or TK14G65W5,RQ equivalent, key selection criteria include its D2PAK package thermal performance (Rth(ch-c) = 0.962 °C/W), gate threshold range (3–4.5 V), and avalanche energy rating (EAS = 194 mJ) under defined test conditions.
Technical Context
This device implements Toshiba's DTMOS™ IV super-junction architecture to achieve low conduction loss while maintaining robust switching behavior. Its enhancement-mode gate structure operates with Vth = 3–4.5 V at VDS = 10 V and ID = 0.69 mA, supporting standard 10 V gate drive in flyback and LLC resonant topologies.
The integrated body diode exhibits trr = 100 ns (typ.) and Qrr = 0.6 µC (typ.) at IDR = 6.9 A, reducing switching losses during hard-commutation. Dynamic parameters include Ciss = 1300 pF, Coss = 35 pF, and Qg = 40 nC, indicating optimized gate charge for medium-frequency operation up to 100 kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 650 V - supports universal AC input (85–265 VAC) with margin for voltage spikes in offline SMPS |
| RDS(ON) | 0.25 Ω (typ.) - enables <1.7 W conduction loss at 13.7 A DC, critical for thermal management in compact adapters |
| ID (DC) | 13.7 A - rated for continuous output current in 65–100 W power stages without forced cooling |
| EAS | 194 mJ - withstands single-pulse avalanche stress during overvoltage transients without failure |
| trr | 100 ns (typ.) - minimizes dead-time losses and EMI in synchronous rectification and quasi-resonant converters |
| Rth(ch-c) | 0.962 °C/W - allows direct heatsink mounting via drain tab for efficient thermal path in D2PAK layout |
| Vth | 3–4.5 V - compatible with standard PWM controllers and provides noise-immune turn-on margin |
Pinout & Package
TK14G65W5,RQ uses the D2PAK (TOSHIBA 2-11H1A) surface-mount package with exposed drain pad for thermal and electrical connection. The drain tab serves as both heatsink interface and primary current return path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1: Gate | Control electrode | Receives 3–10 V logic-level signal; low Qgs1 = 13 nC enables fast turn-on with minimal driver loss |
| 2: Drain (Heatsink) | High-side power terminal | Exposed metal tab electrically connected to drain; must be isolated from PCB ground unless referenced to high-side potential |
| 3: Source | Reference node for gate drive | Serves as return path for load current and gate drive loop; low-inductance routing essential for EMI control |
Key Features
| Feature | Design Value |
|---|---|
| Super-junction DTMOS™ IV structure | Enables 0.25 Ω RDS(ON) at 650 V while maintaining <1300 pF Ciss for balanced efficiency and speed |
| Fast body diode recovery | trr = 100 ns (typ.) reduces switching loss and ringing in discontinuous conduction mode (DCM) flyback designs |
| Robust avalanche capability | EAS = 194 mJ (VDD = 90 V, L = 25 mH) supports reliable operation under transient overvoltage without external snubbers |
| Thermally optimized D2PAK | Rth(ch-c) = 0.962 °C/W enables >100 W operation with passive heatsinking in space-constrained industrial adapters |
| Enhancement-mode gate | Vth = 3–4.5 V ensures stable turn-off at 0 V and clean turn-on with standard 5/10 V drivers, eliminating need for negative bias |
Applications
| AC-DC Adapter Power Stage | Flyback Converter Primary Switch |
|---|---|
Use Scenario: 65 W universal-input AC-DC adapter for laptop chargers operating at 65–100 kHz. IC Role / Device Role / Timing Role: Main high-side switching element in primary-side flyback topology, handling full mains-referenced voltage and current. Use Value: Low RDS(ON) and fast trr reduce conduction and switching losses, improving efficiency to >89% at full load per DOE VI standards. |
Use Scenario: Isolated 24 V/3 A industrial power supply with reinforced insulation and overvoltage protection. IC Role / Device Role / Timing Role: Primary-side switch controlling energy transfer across transformer; synchronized with optocoupler feedback loop. Use Value: 194 mJ EAS rating eliminates need for clamping circuits during line surges, simplifying BOM and improving reliability. |
| LLC Resonant Half-Bridge | Server PSU PFC Stage |
Use Scenario: High-efficiency 150 W server auxiliary supply using LLC resonant topology with ZVS operation. IC Role / Device Role / Timing Role: Upper-leg switch in half-bridge configuration; commutates at zero voltage with body diode conduction. Use Value: 100 ns trr and low Qrr ensure clean ZVS transition and minimize circulating current loss during dead time. |
Use Scenario: Active PFC front-end in 500 W telecom rectifier operating at 65 kHz with THD <5%. IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) PFC, conducting full input current at peak line. Use Value: 13.7 A ID (DC) and 0.25 Ω RDS(ON) support high-current boost operation with <1.5 W conduction loss at 115 VAC input. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP14NM60ND | RDS(ON) = 0.32 Ω (max), EAS = 120 mJ, TO-220FP package (higher Rth(ch-c) = 2.5 °C/W) | Limited to ≤80 W due to higher conduction loss and inferior thermal resistance | Preferred where cost sensitivity outweighs efficiency and thermal constraints |
| IXTH12N65X2 | RDS(ON) = 0.34 Ω (typ.), Qg = 32 nC, TO-247 package, no specified trr | Requires external snubber for diode recovery; less suitable for DCM flyback without added complexity | Chosen when higher surge current rating (IDM = 48 A) is prioritized over body diode performance |
Compared with STP14NM60ND and IXTH12N65X2, TK14G65W5,RQ offers superior thermal performance (0.962 vs. ≥2.5 °C/W), lower RDS(ON), and guaranteed fast trr-making it optimal for compact, high-efficiency 65–100 W offline converters where board space and thermal headroom are constrained.
Availability
TK14G65W5,RQ is available at Aetrix Electronics and suitable for AC-DC adapters, industrial flyback converters, and server auxiliary power supplies requiring stable component supply and long-term manufacturability.
Supply support for TK14G65W5,RQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power ICs, and memory solutions with emphasis on energy efficiency and reliability.
The TK14G65W5,RQ belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in compact offline power supplies and industrial SMPS.
FAQ
What is the maximum continuous drain current rating for TK14G65W5,RQ?
The TK14G65W5,RQ has a maximum continuous drain current (ID) of 13.7 A at Tc = 25 °C. This rating assumes proper heatsinking via the drain tab; derating is required above 25 °C case temperature per the Rth(ch-c) = 0.962 °C/W specification. At Tc = 100 °C, the usable ID drops to approximately 7.5 A.
Does TK14G65W5,RQ have an integrated body diode, and what are its key recovery characteristics?
Yes, TK14G65W5,RQ includes an integrated body diode with reverse recovery time (trr) of 100 ns (typ.) and reverse recovery charge (Qrr) of 0.6 µC (typ.) at IDR = 6.9 A. These values are measured under standardized conditions (VGS = 0 V, -dIDR/dt = 100 A/µs) and directly impact switching loss in DCM flyback and LLC resonant converters.
What is the gate threshold voltage range for TK14G65W5,RQ, and how does it affect drive compatibility?
The gate threshold voltage (Vth) for TK14G65W5,RQ is specified from 3 V to 4.5 V at VDS = 10 V and ID = 0.69 mA. This range ensures reliable turn-on with standard 5 V or 10 V PWM controllers while providing sufficient noise margin to prevent spurious conduction in noisy industrial environments.
Can TK14G65W5,RQ be used in avalanche mode, and what is its single-pulse energy rating?
Yes, TK14G65W5,RQ is rated for single-pulse avalanche operation with EAS = 194 mJ under defined test conditions (VDD = 90 V, Tch = 25 °C, L = 25 mH, RG = 25 Ω, IAR = 3.7 A). This rating allows safe operation during transient overvoltage events without external clamping in well-designed layouts.
What package type does TK14G65W5,RQ use, and how is thermal management implemented?
TK14G65W5,RQ uses the D2PAK (TOSHIBA 2-11H1A) surface-mount package with an exposed drain tab that serves as both electrical connection and thermal interface. Thermal management relies on mounting this tab to a copper heatsink or thermal pad on the PCB, achieving Rth(ch-c) = 0.962 °C/W for effective channel-to-case heat transfer.
TK14G65W5,RQ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- DTMOSIV
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 13.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 300mOhm @ 6.9A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 690µA
- Gate Charge (Qg) (Max) @ Vgs:
- 40 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1300 pF @ 300 V
- FET Feature:
- -
- Power Dissipation (Max):
- 130W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
TK14G65W5,RQ FAQ
1.How can I place an order for TK14G65W5,RQ through Aetrix?
Please submit a Request for Quotation (RFQ) for TK14G65W5,RQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TK14G65W5,RQ reliable?
The price and inventory of TK14G65W5,RQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK14G65W5,RQ is usually 5 days.
3.What payment methods are accepted for TK14G65W5,RQ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK14G65W5,RQ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TK14G65W5,RQ?
TK14G65W5,RQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TK14G65W5,RQ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TK14G65W5,RQ?
For technical support, including TK14G65W5,RQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK14G65W5,RQ requirements.
6.How does Aetrix verify that TK14G65W5,RQ is sourced from the original manufacturer or authorized distributors?
All TK14G65W5,RQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK14G65W5,RQ meets industry standards.
7.What is the process for return or replacement of TK14G65W5,RQ?
All TK14G65W5,RQ units undergo pre-shipment inspection (PSI). If there is an issue with TK14G65W5,RQ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TK14G65W5,RQ part is unused and in its original packaging.
Return procedure for TK14G65W5,RQ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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