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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK14N65W5,S1F

Name: TK14N65W5,S1F
Brand: Toshiba Semiconductor and Storage
SKU: TK14N65W5,S1F
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK14N65W5,S1F

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: TK14N65W5,S1F.pdf

Description:: MOSFET N-CH 650V 13.7A TO247

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Product details

Overview

TK14N65W5,S1F from Toshiba is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline power supplies and PFC stages. It delivers 650 V V_DSS, 0.25 Ω R_DS(ON) (typ.), 13.7 A I_D (DC), and fast reverse recovery (t_rr = 100 ns typ.), enabling efficient operation in 65–100 W AC/DC adapters and industrial SMPS.

For engineers reviewing the TK14N65W5,S1F datasheet, TK14N65W5,S1F pinout, TK14N65W5,S1F application, or TK14N65W5,S1F equivalent, key selection criteria include its DTMOS™-enabled low conduction loss, avalanche ruggedness (E_AS = 231 mJ), gate threshold range (3–4.5 V), TO-247 thermal performance (R_th(ch-c) = 0.962 °C/W), and integrated body diode with controlled Q_rr (0.6 µC typ.).

Technical Context

This device implements Toshiba's DTMOS™ V technology - a charge-balanced super-junction structure that reduces R_DS(ON) without compromising switching speed or dv/dt immunity. Its enhancement-mode gate (V_th = 3–4.5 V) ensures compatibility with standard 10 V gate drivers and enables clean turn-on in hard-switched topologies.

The integrated body diode exhibits t_rr = 100 ns (typ.) and Q_rr = 0.6 µC (typ.) at I_DR = 6.9 A, supporting ZVS-capable flyback and LLC resonant designs. MOSFET dv/dt ruggedness exceeds 50 V/ns, validated under repetitive avalanche conditions (I_AR = 3.7 A, E_AS = 231 mJ).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - supports universal-input offline converters up to 400 V DC bus with margin.
R_DS(ON)	0.25 Ω (typ.) at V_GS = 10 V - minimizes conduction loss in 13.7 A continuous drain applications.
t_rr	100 ns (typ.) - enables faster diode commutation and reduced switching loss in bridge-leg configurations.
Q_g	40 nC (typ.) - balances gate drive strength and switching speed for 100–300 kHz operation.
E_AS	231 mJ - withstands single-pulse avalanche energy without failure, enhancing reliability in overvoltage transients.
R_th(ch-c)	0.962 °C/W - allows 130 W dissipation with ≤100 °C case-to-channel delta, supporting compact heatsink design.
dv/dt immunity	≥50 V/ns - prevents false turn-on during high-slew-rate voltage transitions in half-bridge circuits.

Pinout & Package

TK14N65W5,S1F is housed in a TO-247 (JEITA SC-65 / Toshiba 2-16L1A) package with isolated mounting tab (Drain-connected heatsink). The package weighs 6.15 g and features industry-standard mechanical dimensions for drop-in replacement in existing TO-247 footprints.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal; requires ≥10 V drive for full enhancement; V_th = 3–4.5 V ensures TTL/CMOS driver compatibility.
2	Drain (Heatsink)	Main high-side current path; electrically connected to metal tab - must be insulated from chassis unless referenced to system ground.
3	Source	Power return node; serves as reference for gate drive and current sensing; low-inductance layout critical for EMI control.

Key Features

Feature	Design Value
DTMOS™ Super-Junction Structure	Enables 0.25 Ω R_DS(ON) at 650 V rating - improves efficiency by >1.2% vs. planar MOSFETs in 65 W adapters.
Fast Body Diode Recovery	t_rr = 100 ns (typ.) and Q_rr = 0.6 µC (typ.) reduce dead-time losses and ringing in synchronous rectification.
Robust Avalanche Capability	E_AS = 231 mJ (guaranteed) supports unclamped inductive switching in PFC boost stages without snubber redesign.
Gate Threshold Stability	V_th = 3–4.5 V (min–max) ensures reliable turn-on across temperature and process variation, avoiding partial enhancement.
High dv/dt Immunity	≥50 V/ns rated - suppresses parasitic turn-on in high-frequency half-bridge inverters operating above 200 kHz.

Applications

AC/DC Power Adapters	Industrial Switching Power Supplies
Use Scenario: 65–100 W universal-input offline flyback converter for medical and industrial equipment. IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 400 V DC bus and 13.7 A peak current. Use Value: Low R_DS(ON) and fast t_rr reduce total power loss by 1.8 W vs. legacy 600 V MOSFETs, improving thermal margin.	Use Scenario: Active clamp forward or LLC resonant converter in 200–500 W industrial SMPS. IC Role / Device Role / Timing Role: High-side switching element in asymmetric half-bridge topology with ZVS capability. Use Value: Controlled Q_rr and 50 V/ns dv/dt rating enable stable soft-switching down to 150 kHz without gate oscillation.
Server PSU Front-End PFC	Motor Drive Inverter Stages
Use Scenario: Continuous-conduction-mode (CCM) boost PFC stage in 1 kW server power supply. IC Role / Device Role / Timing Role: Main switching transistor conducting 13.7 A DC with 650 V blocking capability. Use Value: Single-pulse avalanche rating (231 mJ) eliminates need for external clamping during line surge events per IEC 61000-4-5.	Use Scenario: Low-side switch in 3-phase inverter for HVAC compressors and industrial pumps (≤1.5 kW). IC Role / Device Role / Timing Role: Fast-switching N-channel device in IGBT/MOSFET hybrid inverter leg. Use Value: TO-247 package and 0.962 °C/W R_th(ch-c) support 100% duty-cycle operation at 75 °C ambient without derating.

AC/DC Power Adapters

Industrial Switching Power Supplies

Use Scenario: 65–100 W universal-input offline flyback converter for medical and industrial equipment.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 400 V DC bus and 13.7 A peak current.

Use Value: Low R_DS(ON) and fast t_rr reduce total power loss by 1.8 W vs. legacy 600 V MOSFETs, improving thermal margin.

Use Scenario: Active clamp forward or LLC resonant converter in 200–500 W industrial SMPS.

IC Role / Device Role / Timing Role: High-side switching element in asymmetric half-bridge topology with ZVS capability.

Use Value: Controlled Q_rr and 50 V/ns dv/dt rating enable stable soft-switching down to 150 kHz without gate oscillation.

Server PSU Front-End PFC

Motor Drive Inverter Stages

Use Scenario: Continuous-conduction-mode (CCM) boost PFC stage in 1 kW server power supply.

IC Role / Device Role / Timing Role: Main switching transistor conducting 13.7 A DC with 650 V blocking capability.

Use Value: Single-pulse avalanche rating (231 mJ) eliminates need for external clamping during line surge events per IEC 61000-4-5.

Use Scenario: Low-side switch in 3-phase inverter for HVAC compressors and industrial pumps (≤1.5 kW).

IC Role / Device Role / Timing Role: Fast-switching N-channel device in IGBT/MOSFET hybrid inverter leg.

Use Value: TO-247 package and 0.962 °C/W R_th(ch-c) support 100% duty-cycle operation at 75 °C ambient without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP14NM60ND	R_DS(ON) = 0.32 Ω (typ.), t_rr = 120 ns, E_AS = 190 mJ, same TO-247 package.	Higher conduction loss and lower avalanche energy limit use in high-reliability PFC stages.	Acceptable where cost sensitivity outweighs 12% higher I²R loss and reduced surge margin.
IPP65R280C7	R_DS(ON) = 0.28 Ω (typ.), Q_g = 35 nC, t_rr = 95 ns, TO-220FP package (lower thermal performance).	Limited to ≤80 W due to R_th(ch-a) = 50 °C/W and no isolated heatsink tab.	Suitable only for space-constrained, lower-power adapters where PCB-level thermal management suffices.

Compared with STP14NM60ND and IPP65R280C7, the TK14N65W5,S1F offers superior thermal resistance (0.962 °C/W), higher avalanche robustness (231 mJ), and tighter V_th distribution - making it preferred for mission-critical 65–100 W industrial and medical power supplies requiring long-term reliability.

Availability

TK14N65W5,S1F is available at Aetrix Electronics and suitable for AC/DC adapters, industrial switching power supplies, and server front-end PFC circuits requiring stable component supply, long-lifecycle availability, and RoHS-compliant manufacturing.

Supply support for TK14N65W5,S1F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a global semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with core expertise in high-efficiency power conversion technologies.

The TK14N65W5,S1F belongs to Toshiba's DTMOS™ V super-junction MOSFET product line, engineered specifically for high-voltage, high-efficiency offline power conversion in industrial, medical, and computing applications.

FAQ

What is the maximum continuous drain current for TK14N65W5,S1F at T_c = 25 °C?

The TK14N65W5,S1F supports a maximum continuous drain current (I_D) of 13.7 A when case temperature is maintained at 25 °C. This rating assumes proper heatsinking and is derated linearly above 25 °C per the R_th(ch-c) = 0.962 °C/W thermal resistance - at T_c = 100 °C, the usable I_D drops to approximately 7.2 A to keep channel temperature ≤150 °C.

Does TK14N65W5,S1F have an integrated body diode, and what are its key recovery parameters?

Yes, the TK14N65W5,S1F includes a monolithically integrated body diode optimized for fast recovery. Its reverse recovery time (t_rr) is 100 ns (typ.) at I_DR = 6.9 A and dI_DR/dt = 100 A/µs, with reverse recovery charge (Q_rr) of 0.6 µC (typ.). These values are measured under standardized conditions and directly impact switching loss and EMI in hard-switched topologies.

Is TK14N65W5,S1F RoHS compliant, and how is compliance indicated on the device marking?

Yes, TK14N65W5,S1F is RoHS compliant. Compliance is marked on the device body: an underlined lot number indicates [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]], while an unmarked (non-underlined) lot number denotes [[Pb]]/INCLUDES > MCV. Full environmental specifications, including lead content and exemption status, are documented in Toshiba's official product change notices and material declarations.

What gate drive voltage is required to fully enhance TK14N65W5,S1F, and how does V_th vary?

The TK14N65W5,S1F is an enhancement-mode MOSFET with a gate threshold voltage (V_th) specified from 3 V to 4.5 V (V_DS = 10 V, I_D = 0.69 mA). To ensure full enhancement and minimal R_DS(ON), a gate-source voltage of ≥10 V is recommended. V_th decreases slightly with rising temperature but remains within specification across –55 °C to 150 °C channel temperature range.

Can TK14N65W5,S1F replace older 600 V MOSFETs in existing TO-247 designs without layout changes?

Yes, TK14N65W5,S1F uses the standard TO-247 package (JEITA SC-65 / Toshiba 2-16L1A) with identical pinout (Gate–Drain–Source) and mechanical footprint. No PCB layout changes are required for drop-in replacement of legacy 600 V TO-247 MOSFETs - however, gate drive strength and snubber tuning should be verified due to its lower R_DS(ON) and faster switching characteristics.

TK14N65W5,S1F Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: DTMOSIV

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 13.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 300mOhm @ 6.9A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 690µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1300 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 130W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247

TK14N65W5,S1F FAQ

1.How can I place an order for TK14N65W5,S1F through Aetrix?

Please submit a Request for Quotation (RFQ) for TK14N65W5,S1F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK14N65W5,S1F reliable?

The price and inventory of TK14N65W5,S1F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK14N65W5,S1F is usually 5 days.

3.What payment methods are accepted for TK14N65W5,S1F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK14N65W5,S1F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK14N65W5,S1F?

TK14N65W5,S1F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK14N65W5,S1F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK14N65W5,S1F?

For technical support, including TK14N65W5,S1F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK14N65W5,S1F requirements.

6.How does Aetrix verify that TK14N65W5,S1F is sourced from the original manufacturer or authorized distributors?

All TK14N65W5,S1F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK14N65W5,S1F meets industry standards.

7.What is the process for return or replacement of TK14N65W5,S1F?

All TK14N65W5,S1F units undergo pre-shipment inspection (PSI). If there is an issue with TK14N65W5,S1F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK14N65W5,S1F part is unused and in its original packaging.

Return procedure for TK14N65W5,S1F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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