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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK14N65W,S1F

Name: TK14N65W,S1F
Brand: Toshiba Semiconductor and Storage
SKU: TK14N65W,S1F
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK14N65W,S1F

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: TK14N65W,S1F.pdf

Description:: MOSFET N-CH 650V 13.7A TO247

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Product details

Overview

TK14N65W from Toshiba is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline power supplies and industrial DC-DC converters. It delivers 650 V V_DSS, 13.7 A continuous drain current, and a low R_DS(ON) of 0.22 Ω (typ.) at V_GS = 10 V, enabling efficient operation in 65 W–300 W SMPS designs.

For engineers reviewing the TK14N65W datasheet, TK14N65W pinout, TK14N65W application, or TK14N65W equivalent, key selection criteria include its TO-247 package thermal performance (R_th(ch-c) = 0.962 °C/W), avalanche ruggedness (E_AS = 231 mJ), and gate threshold voltage range (2.5–3.5 V) for reliable drive compatibility with standard PWM controllers.

Technical Context

This device implements Toshiba's DTMOS™ IV super-junction architecture to achieve low conduction loss while maintaining fast switching characteristics. Its dynamic parameters-C_iss = 1300 pF, Q_g = 35 nC, and t_on/t_off = 60/110 ns-support operation up to 100 kHz in hard-switched PFC and LLC resonant topologies.

The integrated body diode exhibits t_rr = 240 ns and Q_rr = 2.8 µC under specified conditions, enabling moderate-frequency synchronous rectification support. Gate drive is simplified by enhancement-mode operation and low gate resistance (r_g = 6 Ω), reducing external driver requirements.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - supports universal AC input (85–265 VAC) with ≥2× safety margin in flyback and forward converters
R_DS(ON)	0.22 Ω (typ.) - reduces conduction loss to <1.5 W at 13.7 A, enabling compact heatsink design
I_D (DC)	13.7 A - sustains continuous output power up to ~250 W in well-cooled 200 kHz SMPS
E_AS	231 mJ - withstands single-pulse inductive energy without failure during startup or overload
Q_g	35 nC - enables efficient gate driving with <1 W driver loss at 100 kHz using 12 V supply
t_r/t_f	20/7 ns - minimizes switching transition losses in ZVS/ZCS circuits
V_th	2.5–3.5 V - ensures clean turn-on with industry-standard 5 V or 12 V logic-level controllers

Pinout & Package

TK14N65W is housed in a TO-247 (JEITA SC-65 / Toshiba 2-16L1A) package with isolated mounting tab (Drain-connected heatsink). The case temperature rating is 150 °C, and thermal resistance from channel to case is 0.962 °C/W.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal requiring ≤±30 V drive; low C_iss (1300 pF) eases gate driver selection
2	Drain (Heatsink)	Main high-side power path; electrically connected to metal tab for direct heatsink mounting
3	Source	Reference node for gate drive and current sensing; tied to PCB ground plane in low-side switch configuration

Key Features

Feature	Design Value
Super-junction DTMOS™ IV structure	Enables 0.22 Ω R_DS(ON) at 650 V - 30% lower than conventional planar MOSFETs in same package
Low gate charge (Q_g = 35 nC)	Reduces gate driver power dissipation and EMI generation during high-frequency switching
Avalanche-rated (E_AS = 231 mJ)	Eliminates need for external snubbers in inductive load switching applications like motor drives
Enhancement-mode V_th (2.5–3.5 V)	Ensures zero conduction at logic-low gate voltage, preventing shoot-through in half-bridge configurations
Body diode with controlled Q_rr (2.8 µC)	Supports quasi-resonant operation with predictable reverse recovery behavior in LLC converters

Applications

Industrial Switching Power Supplies	Server & Telecom DC-DC Converters
Use Scenario: Primary-side switch in 200–300 W open-frame AC-DC power supplies for PLCs and HMIs. IC Role / Device Role / Timing Role: High-voltage power switch operating at 65–100 kHz in discontinuous conduction mode (DCM) flyback topology. Use Value: Low R_DS(ON) and high avalanche energy reduce thermal stress and improve reliability over 10-year field life.	Use Scenario: Main switch in 48 V input, 12 V output isolated forward converter for telecom rectifiers. IC Role / Device Role / Timing Role: Synchronous rectifier control FET in secondary-side synchronous rectification stage. Use Value: Fast t_r/t_f and low Q_rr minimize switching loss and cross-conduction risk at 200 kHz.
LED Driver Power Stages	Renewable Energy Inverters
Use Scenario: High-side switch in constant-current LED drivers for street lighting (150–250 W). IC Role / Device Role / Timing Role: Buck-boost controller switch handling 300–450 V DC bus with PWM dimming at 1–20 kHz. Use Value: Stable V_th tolerance ensures consistent turn-on timing across temperature, avoiding current overshoot.	Use Scenario: DC link switch in micro-inverters for residential solar panels (250–400 V DC input). IC Role / Device Role / Timing Role: Half-bridge leg switch in transformerless inverter topology operating at 16–25 kHz. Use Value: R_th(ch-c) = 0.962 °C/W allows direct heatsink mounting without thermal interface pads, simplifying mechanical design.

Industrial Switching Power Supplies

Server & Telecom DC-DC Converters

Use Scenario: Primary-side switch in 200–300 W open-frame AC-DC power supplies for PLCs and HMIs.

IC Role / Device Role / Timing Role: High-voltage power switch operating at 65–100 kHz in discontinuous conduction mode (DCM) flyback topology.

Use Value: Low R_DS(ON) and high avalanche energy reduce thermal stress and improve reliability over 10-year field life.

Use Scenario: Main switch in 48 V input, 12 V output isolated forward converter for telecom rectifiers.

IC Role / Device Role / Timing Role: Synchronous rectifier control FET in secondary-side synchronous rectification stage.

Use Value: Fast t_r/t_f and low Q_rr minimize switching loss and cross-conduction risk at 200 kHz.

LED Driver Power Stages

Renewable Energy Inverters

Use Scenario: High-side switch in constant-current LED drivers for street lighting (150–250 W).

IC Role / Device Role / Timing Role: Buck-boost controller switch handling 300–450 V DC bus with PWM dimming at 1–20 kHz.

Use Value: Stable V_th tolerance ensures consistent turn-on timing across temperature, avoiding current overshoot.

Use Scenario: DC link switch in micro-inverters for residential solar panels (250–400 V DC input).

IC Role / Device Role / Timing Role: Half-bridge leg switch in transformerless inverter topology operating at 16–25 kHz.

Use Value: R_th(ch-c) = 0.962 °C/W allows direct heatsink mounting without thermal interface pads, simplifying mechanical design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP14NK60ZFP	600 V V_DSS, R_DS(ON) = 0.38 Ω, Q_g = 42 nC, TO-220FP package	Lower voltage rating and higher on-resistance limit use to ≤150 W designs; smaller package restricts thermal headroom	Choose when cost sensitivity outweighs efficiency and power density requirements
IXTH14N65X2	650 V V_DSS, R_DS(ON) = 0.24 Ω, Q_g = 32 nC, TO-247 package, enhanced dv/dt immunity	Slightly higher R_DS(ON) but superior noise immunity in EMI-critical environments like medical equipment	Prefer where system-level EMC compliance is prioritized over minimal conduction loss

Compared with STP14NK60ZFP and IXTH14N65X2, TK14N65W offers the lowest R_DS(ON) in TO-247 form factor and best balance of gate charge and avalanche ruggedness for general-purpose 200–300 W industrial SMPS.

Availability

TK14N65W is available at Aetrix Electronics and suitable for industrial switching power supplies, server DC-DC converters, LED driver power stages, and renewable energy inverters requiring stable component supply and long-term manufacturability.

Supply support for TK14N65W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with global manufacturing and quality systems certified to ISO 9001 and IATF 16949.

The TK14N65W belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in industrial and infrastructure applications.

FAQ

What is the maximum continuous drain current rating for TK14N65W?

The TK14N65W has a maximum continuous drain current (I_D) of 13.7 A at T_c = 25 °C. This rating assumes proper heatsinking to maintain channel temperature ≤150 °C. At elevated case temperatures, derating is required per the PD–T_c curve in Figure 8.15 of the TK14N65W datasheet.

Does TK14N65W support avalanche operation, and what is its rated single-pulse energy?

Yes, TK14N65W is fully avalanche-rated with guaranteed single-pulse avalanche energy (E_AS) of 231 mJ under specified test conditions (V_DD = 90 V, I_AR = 3.7 A, L = 29.8 mH). This capability allows safe operation during transient overloads without external clamping components in properly designed circuits.

What is the gate threshold voltage range for TK14N65W, and how does it affect drive compatibility?

The TK14N65W has a gate threshold voltage (V_th) range of 2.5–3.5 V at V_DS = 10 V and I_D = 0.69 mA. This ensures reliable turn-on with standard 5 V or 12 V gate drivers while maintaining sufficient noise margin to prevent spurious conduction in noisy industrial environments.

Can TK14N65W be used in place of older DTMOS™ III devices like TK12A65D?

TK14N65W is not a direct drop-in replacement for TK12A65D due to differences in gate charge (35 nC vs. 28 nC) and R_DS(ON) (0.22 Ω vs. 0.29 Ω). While both share TO-247 packaging and pinout, layout review is required to verify gate drive strength and thermal margin before substitution in existing designs.

What thermal resistance values apply to TK14N65W in typical heatsink-mounted configurations?

When mounted to a heatsink via its Drain-connected tab, TK14N65W exhibits R_th(ch-c) = 0.962 °C/W (channel-to-case) and R_th(ch-a) = 50 °C/W (channel-to-ambient, no heatsink). For production designs, actual thermal performance depends on interface material, mounting torque (0.8 N·m max), and heatsink geometry-validated per Figure 8.13 and 8.15 in the TK14N65W datasheet.

TK14N65W,S1F Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: DTMOSIV

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 13.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 250mOhm @ 6.9A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 690µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1300 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 130W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247

TK14N65W,S1F FAQ

1.How can I place an order for TK14N65W,S1F through Aetrix?

Please submit a Request for Quotation (RFQ) for TK14N65W,S1F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK14N65W,S1F reliable?

The price and inventory of TK14N65W,S1F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK14N65W,S1F is usually 5 days.

3.What payment methods are accepted for TK14N65W,S1F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK14N65W,S1F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK14N65W,S1F?

TK14N65W,S1F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK14N65W,S1F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK14N65W,S1F?

For technical support, including TK14N65W,S1F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK14N65W,S1F requirements.

6.How does Aetrix verify that TK14N65W,S1F is sourced from the original manufacturer or authorized distributors?

All TK14N65W,S1F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK14N65W,S1F meets industry standards.

7.What is the process for return or replacement of TK14N65W,S1F?

All TK14N65W,S1F units undergo pre-shipment inspection (PSI). If there is an issue with TK14N65W,S1F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK14N65W,S1F part is unused and in its original packaging.

Return procedure for TK14N65W,S1F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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