Toshiba Semiconductor and Storage TK155E65Z,S1X

Overview

TK155E65Z from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel DTMOS power MOSFET designed for high-efficiency switching in offline AC-DC power supplies. It delivers 650 V V_DSS, 18 A continuous drain current, and a typ. R_DS(ON) of 0.13 Ω at V_GS = 10 V, with TO-220 package and integrated body diode for flyback and LLC resonant converter primary-side switching.

For engineers reviewing the TK155E65Z datasheet, TK155E65Z pinout, TK155E65Z application, or TK155E65Z equivalent, key selection criteria include avalanche ruggedness (E_AS = 225 mJ), dv/dt immunity (70 V/ns), low gate charge (Q_g = 29 nC), thermal resistance (R_th(ch-c) = 0.833 °C/W), and body diode reverse recovery performance (Q_rr = 3.3 µC).

Technical Context

The TK155E65Z implements Toshiba's DTMOS (Double-diffused Trench MOS) structure to achieve lower R_DS(ON) and reduced gate-drain charge (Q_gd = 8 nC) versus planar counterparts. Its enhancement-mode operation (V_th = 3–4 V) enables direct drive from standard PWM controllers without level-shifting.

Designed for hard-switched and resonant topologies, it features guaranteed single-pulse avalanche capability (I_AS = 4.5 A, E_AS = 225 mJ) and robust MOSFET dv/dt ruggedness (70 V/ns), supporting reliable operation under transient overvoltage and commutation stress in 650 V-class SMPS.

Key Specifications

Pinout & Package

TK155E65Z uses the industry-standard TO-220 package (TOSHIBA designation: 2-10X1A), with drain connected to the metal tab for direct heatsink mounting and optimized thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Compared with STP15NM60ND and IXTH16N65X2, the TK155E65Z offers the lowest R_DS(ON) in TO-220, verified avalanche energy, and optimized Q_gd/C_iss ratio-making it ideal for high-efficiency, thermally constrained 650 V SMPS where layout reuse and BOM simplification are priorities.

Availability

TK155E65Z is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC adapters, telecom rectifiers, and EV auxiliary power supplies requiring stable component supply and long-term manufacturability.

Supply support for TK155E65Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a global semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in discrete power semiconductors.

The TK155E65Z belongs to Toshiba's DTMOS VI series, engineered specifically for high-efficiency, high-reliability switching power supplies targeting datacenter, industrial, and telecom infrastructure applications.

FAQ

What is the maximum continuous drain current rating for TK155E65Z at case temperature 100 °C?

The TK155E65Z supports 12.5 A continuous drain current at T_c = 100 °C, derated from its 18 A rating at T_c = 25 °C per the guaranteed maximum ID–Tc curve (Fig. 8.17). This derating ensures safe operation within thermal limits when mounted on a heatsink with appropriate thermal interface material and airflow.

Does TK155E65Z have a fully rated avalanche capability, and what test conditions apply?

Yes, TK155E65Z specifies guaranteed single-pulse avalanche energy E_AS = 225 mJ under conditions: V_DD = 90 V, T_ch = 25 °C (initial), L = 19.7 mH, and I_AS = 4.5 A (Note 2, Absolute Maximum Ratings). This rating is production-tested and applies to transient inductive energy absorption during turn-off.

What is the typical gate threshold voltage range for TK155E65Z, and how does it affect drive circuit design?

The TK155E65Z has a gate threshold voltage V_th of 3–4 V (V_DS = 10 V, I_D = 0.73 mA), confirming enhancement-mode behavior. This allows direct interfacing with 3.3 V or 5 V logic-level PWM controllers without gate driver boosting, though 10 V gate drive is recommended for full R_DS(ON) utilization and optimal switching speed.

Can TK155E65Z be used in synchronous rectification applications?

No, TK155E65Z is not intended for synchronous rectification. It is a high-voltage N-channel MOSFET optimized for primary-side switching, with body diode characteristics (V_DSF = −1.7 V, t_rr = 290 ns) suitable only for freewheeling-not low-loss rectification. For SR, dedicated low-V_F, low-Q_rr MOSFETs like the TK120F06N are recommended.

What is the channel-to-case thermal resistance of TK155E65Z, and how does it impact heatsink selection?

The TK155E65Z has a maximum channel-to-case thermal resistance R_th(ch-c) of 0.833 °C/W. When dissipating 15 W, this results in ~12.5 °C temperature rise from case to junction-enabling use of compact extruded aluminum heatsinks (e.g., 50 × 50 × 25 mm) with natural convection, provided the case-to-heatsink interface uses thermal grease (0.1 °C·in²/W typical).