Toshiba Semiconductor and Storage TK15S04N1L,LQ
- Part No.:
- TK15S04N1L,LQ
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
TK15S04N1L,LQ.pdf
- Description:
- MOSFET N-CH 40V 15A DPAK
- Quantity:
- Payment:

- Shipping:

Inventory:1,595
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
TK15S04N1L,LQ from Toshiba Electronic Devices & Storage Corporation is an AEC-Q101-qualified silicon N-channel power MOSFET in U-MOSⅧ-H process, designed for high-efficiency switching in automotive and industrial power stages. It delivers RDS(ON) = 13.7 mΩ (typ.) at VGS = 10 V, supports 15 A DC drain current, and operates up to 40 V VDSS, making it suitable for motor drivers and synchronous buck regulators.
For engineers reviewing the TK15S04N1L,LQ datasheet, TK15S04N1L,LQ pinout, TK15S04N1L,LQ application, or TK15S04N1L,LQ equivalent, key selection criteria include its DPAK+ package thermal performance (Rth(ch-c) = 3.2 °C/W), low gate charge (Qg = 10 nC), and guaranteed avalanche energy rating (EAS = 23 mJ) under automotive-grade reliability constraints.
Technical Context
This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate structure to achieve low on-resistance and fast switching with controlled Qgd/Qgs1 ratio (2 nC / 2 nC), enabling stable operation in hard-switched DC-DC converters. Its enhancement-mode threshold voltage (Vth = 1.5–2.5 V) ensures reliable gate drive compatibility with 3.3 V and 5 V logic controllers.
The device integrates a robust body diode with trr = 31 ns and Qrr = 11 nC, supporting synchronous rectification and freewheeling in bidirectional topologies. Channel temperature is rated to 175 °C, and all absolute maximum ratings-including single-pulse avalanche current (IAS = 15 A)-are qualified per AEC-Q101.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V - Maximum blocking voltage for 12 V automotive systems with transient margin |
| RDS(ON) (VGS = 10 V) | 13.7 mΩ (typ.) - Enables <1.1 W conduction loss at 7.5 A continuous current |
| ID (DC) | 15 A - Sustained current capability with heatsink at Tc = 25 °C |
| Qg | 10 nC - Reduces gate drive power and enables >500 kHz switching in SMPS designs |
| EAS | 23 mJ - Withstands inductive turn-off energy without failure in motor control H-bridges |
| Rth(ch-c) | 3.2 °C/W - Supports high-power density layout with direct PCB copper thermal pad attachment |
| Vth | 1.5–2.5 V - Ensures clean turn-on with standard microcontroller GPIOs and avoids shoot-through risk |
Pinout & Package
TK15S04N1L,LQ uses the DPAK+ (TOSHIBA 2-7M1A) surface-mount package with exposed drain tab for thermal and electrical connection. The package weighs 0.36 g and features gull-wing leads compatible with standard reflow profiles.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1: Gate | Control terminal | Receives gate drive signal; low input capacitance (Ciss = 610 pF) minimizes driver loading |
| 2: Drain (heatsink) | Main power output / thermal path | Electrically connected to internal die backside; must be soldered to large copper area for thermal management |
| 3: Source | Power return / reference node | Serves as common source for gate drive reference and current sensing; low-inductance layout critical for EMI control |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive powertrain and chassis applications per stress test requirements |
| U-MOSⅧ-H trench process | Delivers 25% lower RDS(ON) vs. prior U-MOS generations at same die size |
| Low Qgd/Qgs1 ratio | 1:1 ratio (2 nC / 2 nC) improves Miller immunity and reduces switching oscillation risk |
| Body diode trr = 31 ns | Enables efficient synchronous rectification in buck converters without external Schottky |
| Single-pulse avalanche rated | Guaranteed 23 mJ energy absorption supports inductive load switching without snubbers |
Applications
| Automotive HVAC Blower Control | Industrial 24 V DC-DC Converter |
|---|---|
Use Scenario: PWM-controlled 12–24 V blower motor in passenger cabin climate systems. IC Role / Device Role / Timing Role: High-side or low-side switching element in half-bridge motor driver stage. Use Value: Low RDS(ON) minimizes heat generation in confined space; AEC-Q101 compliance ensures 15-year field reliability. |
Use Scenario: Primary-side switch in isolated 24 V input, 5/12 V output flyback or forward converter. IC Role / Device Role / Timing Role: Main power switch operating at 200–500 kHz with 32 V VDD clamping. Use Value: Fast ton/toff (14 ns / 28 ns) and low Coss (390 pF) reduce switching losses at high frequency. |
| Brushless DC Motor Inverter | Automotive LED Headlamp Driver |
Use Scenario: Phase-leg switch in 3-phase BLDC inverter for electric power steering (EPS). IC Role / Device Role / Timing Role: Low-side switch in 6-step commutation with integrated bootstrap gate drive. Use Value: Avalanche rating absorbs inductive kickback during phase current reversal; 175 °C Tch supports under-hood ambient. |
Use Scenario: Constant-current switch controlling high-brightness LED strings in adaptive front lighting systems (AFS). IC Role / Device Role / Timing Role: PWM dimming switch in series with LED load, operating at 1–10 kHz. Use Value: Tight Vth range (1.5–2.5 V) ensures consistent turn-on across temperature; low IDSS (<10 µA) prevents standby leakage. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL15DN4LF5 | Same VDSS (40 V), higher RDS(ON) (16.5 mΩ typ.), DFN5x6 package | Lacks AEC-Q101 qualification; not approved for automotive safety-critical use | Prefer TK15S04N1L,LQ where automotive qualification and thermal performance are mandatory |
| IRF3708PBF | Higher VDSS (60 V), higher RDS(ON) (20 mΩ typ.), TO-220 package | Through-hole mounting only; no DPAK+ thermal pad; unqualified for automotive | Choose TK15S04N1L,LQ when surface-mount, high-density layout and AEC-Q101 are required |
Compared with STL15DN4LF5 and IRF3708PBF, TK15S04N1L,LQ uniquely combines AEC-Q101 certification, DPAK+ thermal efficiency, and industry-leading 13.7 mΩ RDS(ON) in its 40 V class-making it the preferred choice for space-constrained, thermally demanding automotive power stages.
Availability
TK15S04N1L,LQ is available at Aetrix Electronics and suitable for automotive motor drivers, switching voltage regulators, and industrial power supplies requiring stable component supply across extended product lifecycles.
Supply support for TK15S04N1L,LQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation is a global semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with core expertise in trench-MOS and wide-bandgap technologies.
The TK15S04N1L,LQ belongs to Toshiba's U-MOSⅧ-H automotive-qualified power MOSFET family, engineered specifically for high-reliability 12 V/24 V vehicle subsystems including motor control, lighting, and DC-DC conversion.
FAQ
What is the gate threshold voltage range for TK15S04N1L,LQ?
The TK15S04N1L,LQ has a gate threshold voltage (Vth) range of 1.5 V to 2.5 V, measured at VDS = 10 V and ID = 0.1 mA. This tight Vth window ensures predictable turn-on behavior across temperature and process variation, supporting robust gate drive design in automotive environments where supply rails may vary.
Is TK15S04N1L,LQ suitable for synchronous rectification?
Yes, TK15S04N1L,LQ supports synchronous rectification due to its optimized body diode characteristics: reverse recovery time (trr) is 31 ns and reverse recovery charge (Qrr) is 11 nC. These values enable efficient high-frequency freewheeling in buck converters without excessive diode conduction loss or ringing.
What is the maximum channel temperature rating for TK15S04N1L,LQ?
The maximum channel temperature (Tch) for TK15S04N1L,LQ is 175 °C, as defined in its AEC-Q101 qualification and absolute maximum ratings. This rating applies under continuous operation and must be maintained via proper PCB thermal design-especially using the exposed drain pad-to avoid reliability degradation.
Does TK15S04N1L,LQ have avalanche capability?
Yes, TK15S04N1L,LQ is fully rated for single-pulse avalanche operation with EAS = 23 mJ and IAS = 15 A. This capability is validated per AEC-Q101 and allows safe operation during inductive load switching transients-such as motor phase commutation-without external snubber circuits.
What package type does TK15S04N1L,LQ use, and how is thermal management achieved?
TK15S04N1L,LQ uses the DPAK+ (TOSHIBA 2-7M1A) package with an exposed drain pad serving as both electrical connection and primary thermal path. Thermal management relies on soldering Pin 2 (Drain) directly to a large copper area on the PCB, achieving Rth(ch-c) = 3.2 °C/W for effective heat transfer away from the die.
TK15S04N1L,LQ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- U-MOSVIII-H
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 17.8mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 10 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 610 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 46W (Tc)
- Operating Temperature:
- 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK+
TK15S04N1L,LQ FAQ
1.How can I place an order for TK15S04N1L,LQ through Aetrix?
Please submit a Request for Quotation (RFQ) for TK15S04N1L,LQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TK15S04N1L,LQ reliable?
The price and inventory of TK15S04N1L,LQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK15S04N1L,LQ is usually 5 days.
3.What payment methods are accepted for TK15S04N1L,LQ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK15S04N1L,LQ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TK15S04N1L,LQ?
TK15S04N1L,LQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TK15S04N1L,LQ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TK15S04N1L,LQ?
For technical support, including TK15S04N1L,LQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK15S04N1L,LQ requirements.
6.How does Aetrix verify that TK15S04N1L,LQ is sourced from the original manufacturer or authorized distributors?
All TK15S04N1L,LQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK15S04N1L,LQ meets industry standards.
7.What is the process for return or replacement of TK15S04N1L,LQ?
All TK15S04N1L,LQ units undergo pre-shipment inspection (PSI). If there is an issue with TK15S04N1L,LQ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TK15S04N1L,LQ part is unused and in its original packaging.
Return procedure for TK15S04N1L,LQ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
TK15S04N1L,LQ Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

