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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK160F10N1L,LQ

Name: TK160F10N1L,LQ
Brand: Toshiba Semiconductor and Storage
SKU: TK160F10N1L,LQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK160F10N1L,LQ

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: TK160F10N1L,LQ.pdf

Description:: MOSFET N-CH 100V 160A TO220SM

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Product details

Overview

TK160F10N1L,LQ from Toshiba Electronic Devices & Storage Corporation is an AEC-Q101-qualified silicon N-channel power MOSFET in U-MOSⅧ-H process, designed for high-current switching in automotive and industrial DC-DC converters. It delivers R_DS(ON) = 2.0 mΩ (typ.) at V_GS = 10 V, supports 160 A DC drain current, and features a 100 V drain-source breakdown voltage with TO-220SM(W) package for enhanced thermal performance.

For engineers reviewing the TK160F10N1L,LQ datasheet, TK160F10N1L,LQ pinout, TK160F10N1L,LQ application, or TK160F10N1L,LQ equivalent, this device is selected for high-efficiency, high-reliability power stage designs where low conduction loss, robust avalanche capability (E_AS = 466 mJ), and automotive-grade qualification are critical.

Technical Context

This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate structure to minimize on-resistance while maintaining fast switching and low gate charge (Q_g = 122 nC typ.). Its enhancement-mode operation (V_th = 2.5–3.5 V) ensures reliable turn-on control with standard 10 V gate drivers.

The device integrates a built-in body diode with reverse recovery time t_rr = 110 ns (typ.) and Q_rr = 165 nC (typ.), enabling efficient synchronous rectification and freewheeling in hard-switched topologies. Thermal design is supported by R_th(ch-c) = 0.4 °C/W and T_ch rating up to 175 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Supports 48 V and 60 V automotive bus systems with margin against transients.
R_DS(ON)	2.0 mΩ (typ.) at V_GS = 10 V - Enables <1.3 W conduction loss at 80 A, reducing heatsink requirements.
I_D (DC)	160 A - Sustains continuous high-current output in motor drive H-bridge legs or VRM phases.
E_AS	466 mJ - Withstands single-pulse inductive energy without failure in unclamped inductive switching.
Q_g	122 nC (typ.) - Balances switching speed and driver loss; compatible with standard 1–4.7 Ω gate resistors.
t_rr	110 ns (typ.) - Limits diode reverse recovery loss and EMI in buck/boost/flyback converters.
R_th(ch-c)	0.4 °C/W - Allows >300 W power dissipation with moderate heatsinking at T_c = 100 °C.

Pinout & Package

Package: TO-220SM(W) (TOSHIBA 2-10W1S), surface-mount variant of TO-220 with isolated heatsink tab and gull-wing leads. Weight: 1.07 g (typ.).

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal; requires ≥10 V drive for full enhancement; sensitive to ESD (handle per JESD22-A114).
2	Drain (Heatsink)	Main current path input; electrically connected to metal tab - must be isolated from PCB ground unless system common-drain topology.
3	Source	Reference node for gate drive and current sensing; ties to power ground or low-side shunt resistor.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive underhood applications including temperature cycling, HTRB, and UIS stress per Rev-G test plan.
U-MOSⅧ-H trench process	Reduces cell pitch and channel resistance, achieving industry-leading R_DS(ON) × area efficiency for 100 V class.
Low Q_gd/Q_g ratio	Q_gd = 22 nC / Q_g = 122 nC → ~18% - improves Miller immunity and enables faster, more controllable turn-off.
Robust body diode	160 A pulsed reverse current rating and 110 ns t_rr support bidirectional current handling in half-bridge freewheeling.
Isolated heatsink tab	TO-220SM(W) package allows direct mounting to heatsink without insulator, simplifying thermal interface in space-constrained modules.

Applications

Automotive DC-DC Converters	Industrial Motor Drives
Use Scenario: 12 V–48 V bidirectional DC-DC converter in 48 V mild-hybrid vehicles, operating at 200 kHz with synchronous rectification. IC Role / Device Role / Timing Role: High-side power switch in interleaved buck-boost stage; handles peak currents up to 160 A with <2.0 mΩ conduction loss. Use Value: Reduces conduction loss by >35% vs. legacy 3.5 mΩ 100 V MOSFETs, improving system efficiency from 92% to 94.5% at 5 kW load.	Use Scenario: Low-voltage, high-torque BLDC motor drive for HVAC blowers and power steering assist in commercial vehicles. IC Role / Device Role / Timing Role: Phase-leg high-side switch in 3-phase inverter; commutated at ≤10 kHz with active freewheeling via internal body diode. Use Value: Enables compact inverter design with 0.4 °C/W thermal resistance, allowing operation at 100 °C case temperature without derating.
Server VRMs	Renewable Energy Inverters
Use Scenario: Multiphase buck converter supplying CPU core voltage (0.8–1.2 V) at up to 600 A in AI accelerator servers. IC Role / Device Role / Timing Role: Synchronous rectifier in high-current phase leg; operated with 10 V gate drive and 4.7 Ω gate resistor for optimized dV/dt control. Use Value: Delivers 2.0 mΩ R_DS(ON) at 80 A, limiting I²R loss to 12.8 W per phase and enabling 96% peak efficiency at 400 W/phase.	Use Scenario: DC link switching in string-level solar microinverters requiring 100 V blocking and 100 A surge capability. IC Role / Device Role / Timing Role: Unidirectional switch in boost stage; subjected to repetitive UIS events during PV string fault conditions. Use Value: 466 mJ single-pulse avalanche energy rating ensures survivability during 100 µs overvoltage transients without external clamping.

Automotive DC-DC Converters

Industrial Motor Drives

Use Scenario: 12 V–48 V bidirectional DC-DC converter in 48 V mild-hybrid vehicles, operating at 200 kHz with synchronous rectification.

IC Role / Device Role / Timing Role: High-side power switch in interleaved buck-boost stage; handles peak currents up to 160 A with <2.0 mΩ conduction loss.

Use Value: Reduces conduction loss by >35% vs. legacy 3.5 mΩ 100 V MOSFETs, improving system efficiency from 92% to 94.5% at 5 kW load.

Use Scenario: Low-voltage, high-torque BLDC motor drive for HVAC blowers and power steering assist in commercial vehicles.

IC Role / Device Role / Timing Role: Phase-leg high-side switch in 3-phase inverter; commutated at ≤10 kHz with active freewheeling via internal body diode.

Use Value: Enables compact inverter design with 0.4 °C/W thermal resistance, allowing operation at 100 °C case temperature without derating.

Server VRMs

Renewable Energy Inverters

Use Scenario: Multiphase buck converter supplying CPU core voltage (0.8–1.2 V) at up to 600 A in AI accelerator servers.

IC Role / Device Role / Timing Role: Synchronous rectifier in high-current phase leg; operated with 10 V gate drive and 4.7 Ω gate resistor for optimized dV/dt control.

Use Value: Delivers 2.0 mΩ R_DS(ON) at 80 A, limiting I²R loss to 12.8 W per phase and enabling 96% peak efficiency at 400 W/phase.

Use Scenario: DC link switching in string-level solar microinverters requiring 100 V blocking and 100 A surge capability.

IC Role / Device Role / Timing Role: Unidirectional switch in boost stage; subjected to repetitive UIS events during PV string fault conditions.

Use Value: 466 mJ single-pulse avalanche energy rating ensures survivability during 100 µs overvoltage transients without external clamping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7	R_DS(ON) = 2.2 mΩ (typ.), Q_g = 135 nC, TO-220FP package (non-isolated tab)	Lacks AEC-Q101 qualification; not approved for automotive underhood use	Select when cost sensitivity outweighs automotive qualification and thermal isolation is not required.
IXFH160N10P	R_DS(ON) = 2.3 mΩ (typ.), E_AS = 320 mJ, TO-247AC package (larger footprint)	Higher R_DS(ON), lower avalanche rating, and larger package increase board area and thermal interface complexity	Choose only if existing layout uses TO-247 and no redesign is possible; otherwise, TK160F10N1L,LQ offers superior density and ruggedness.

Compared with STL220N10F7 and IXFH160N10P, the TK160F10N1L,LQ provides the lowest R_DS(ON), highest E_AS, and automotive qualification in a thermally optimized surface-mount package - making it the preferred choice for next-generation 48 V automotive and high-density industrial power stages.

Availability

TK160F10N1L,LQ is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and server VRMs requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.

Supply support for TK160F10N1L,LQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a global semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in automotive-grade reliability and trench-MOSFET innovation.

The TK160F10N1L,LQ belongs to Toshiba's U-MOSⅧ-H automotive power MOSFET family, engineered specifically for high-efficiency, high-reliability 48 V and 60 V power conversion systems in electrified vehicles and industrial automation.

FAQ

What is the maximum continuous drain current rating for TK160F10N1L,LQ?

The TK160F10N1L,LQ is rated for 160 A DC drain current at T_c = 25 °C. Derating applies above 25 °C case temperature per the Safe Operating Area curve (Fig. 9.13); at T_c = 100 °C, the usable DC current drops to approximately 105 A. This rating assumes proper heatsinking with R_th(ch-c) ≤ 0.4 °C/W and adherence to the absolute maximum channel temperature of 175 °C.

Is TK160F10N1L,LQ suitable for automotive underhood applications?

Yes, the TK160F10N1L,LQ is AEC-Q101 qualified and explicitly designed for automotive underhood use, including engine control units, 48 V DC-DC converters, and electric power steering systems. Its construction meets stress-test requirements for temperature cycling, high-temperature reverse bias, and unclamped inductive switching - all validated per Rev-G test conditions in the official Toshiba qualification report.

What is the gate threshold voltage range for TK160F10N1L,LQ?

The gate threshold voltage (V_th) for TK160F10N1L,LQ is specified as 2.5 V to 3.5 V at V_DS = 10 V and I_D = 1 mA. This range ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers when used with appropriate gate resistors, while maintaining noise immunity in noisy automotive environments.

Does TK160F10N1L,LQ include an integrated body diode, and what are its key parameters?

Yes, TK160F10N1L,LQ includes a monolithic body diode with reverse recovery time (t_rr) of 110 ns (typ.) and reverse recovery charge (Q_rr) of 165 nC (typ.) at I_DR = 160 A and -dI_DR/dt = 50 A/µs. These values enable efficient freewheeling in hard-switched topologies and reduce snubber losses compared to discrete diode solutions.

What package type does TK160F10N1L,LQ use, and how is thermal management implemented?

TK160F10N1L,LQ uses the TO-220SM(W) package (TOSHIBA 2-10W1S), a surface-mount variant with an isolated metal tab serving as the drain and primary heatsink interface. Thermal management relies on direct mounting to an external heatsink; its R_th(ch-c) = 0.4 °C/W enables >300 W power dissipation at T_c = 100 °C, provided the heatsink maintains stable thermal resistance to ambient.

TK160F10N1L,LQ Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSVIII-H

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 160A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 2.4mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 122 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 10100 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: 175°C

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-220SM(W)

TK160F10N1L,LQ FAQ

1.How can I place an order for TK160F10N1L,LQ through Aetrix?

Please submit a Request for Quotation (RFQ) for TK160F10N1L,LQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK160F10N1L,LQ reliable?

The price and inventory of TK160F10N1L,LQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK160F10N1L,LQ is usually 5 days.

3.What payment methods are accepted for TK160F10N1L,LQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK160F10N1L,LQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK160F10N1L,LQ?

TK160F10N1L,LQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK160F10N1L,LQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK160F10N1L,LQ?

For technical support, including TK160F10N1L,LQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK160F10N1L,LQ requirements.

6.How does Aetrix verify that TK160F10N1L,LQ is sourced from the original manufacturer or authorized distributors?

All TK160F10N1L,LQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK160F10N1L,LQ meets industry standards.

7.What is the process for return or replacement of TK160F10N1L,LQ?

All TK160F10N1L,LQ units undergo pre-shipment inspection (PSI). If there is an issue with TK160F10N1L,LQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK160F10N1L,LQ part is unused and in its original packaging.

Return procedure for TK160F10N1L,LQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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