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Toshiba Semiconductor and Storage TK160F10N1L,LXGQ
- Part No.:
- TK160F10N1L,LXGQ
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
TK160F10N1L,LXGQ.pdf
- Description:
- MOSFET N-CH 100V 160A TO220SM
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
TK160F10N1L,LXGQ from Toshiba Electronic Devices & Storage Corporation is an AEC-Q101-qualified silicon N-channel power MOSFET in U-MOSⅧ-H process, designed for high-current switching in automotive and industrial DC-DC converters. It delivers RDS(ON) = 2.0 mΩ (typ.) at VGS = 10 V, supports continuous drain current of 160 A (Tc = 25 °C), and features low gate charge (Qg = 122 nC) for efficient high-frequency operation in motor drivers and voltage regulators.
For engineers reviewing the TK160F10N1L,LXGQ datasheet, TK160F10N1L,LXGQ pinout, TK160F10N1L,LXGQ application, or TK160F10N1L,LXGQ equivalent, key selection criteria include its 100 V VDSS, TO-220SM(W) package with heatsink-integrated drain, AEC-Q101 qualification, and guaranteed single-pulse avalanche energy of 466 mJ - critical for robustness in automotive power stages.
Technical Context
This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate structure to minimize conduction loss while maintaining fast switching performance. Its enhancement-mode threshold voltage (Vth = 2.5–3.5 V) ensures reliable gate drive compatibility with standard 10 V logic-level controllers, and its low Ciss (10100 pF) and Crss (610 pF) support stable operation under high dV/dt conditions typical in synchronous rectification.
The device integrates a robust body diode with reverse recovery time trr = 110 ns (typ.) and Qrr = 165 nC (typ.), enabling efficient freewheeling in hard-switched topologies. Thermal design is supported by Rth(ch-c) = 0.4 °C/W, allowing high-power dissipation when mounted on a heatsink via its exposed drain tab.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Maximum blocking voltage for use in 48 V automotive systems and industrial 100 V bus applications. |
| RDS(ON) (VGS = 10 V) | 2.0 mΩ (typ.) - Enables <1.3 W conduction loss at 80 A, reducing thermal stress in high-current power stages. |
| ID (DC) | 160 A (Tc = 25 °C) - Supports high-output current in motor drives and battery-powered inverters without parallel devices. |
| Qg | 122 nC (typ.) - Low total gate charge allows fast turn-on/turn-off with moderate gate driver strength (e.g., 4.7 Ω RGG). |
| EAS | 466 mJ (typ.) - Guaranteed avalanche energy supports unclamped inductive switching in relay drivers and solenoid controls. |
| Rth(ch-c) | 0.4 °C/W - Enables 375 W power dissipation with ≤150 °C channel-to-case temperature rise, simplifying heatsink sizing. |
| AEC-Q101 | Qualified - Validated for automotive underhood applications including engine control, EPS, and ADAS power supplies. |
Pinout & Package
Package: TO-220SM(W), also designated TOSHIBA 2-10W1S - surface-mount variant with insulated mounting hole and integral heatsink tab (drain-connected). Weight: 1.07 g (typ.).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Control terminal; requires ≥2.5 V to initiate conduction; sensitive to ESD (handle per JESD22-A114). |
| 2 | Drain (Heatsink) | Main high-side current path; electrically connected to metal tab for direct thermal coupling to PCB/heatsink. |
| 3 | Source | Reference node for gate drive; common return for load current; must be routed with low inductance in high-dI/dt applications. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive temperature cycling, HTRB, and UIS testing - enables use in safety-critical 12/48 V vehicle subsystems. |
| RDS(ON) = 2.0 mΩ (typ.) @ VGS = 10 V | Reduces I²R losses by >30% vs. legacy U-MOS VI parts, improving efficiency in 100 kHz–500 kHz DC-DC converters. |
| Low Qgd/Qg ratio (22/122 nC) | Minimizes Miller effect during switching, enhancing noise immunity and enabling stable operation with minimal gate resistance. |
| Body diode trr = 110 ns (typ.) | Enables clean commutation in synchronous buck and half-bridge topologies without external Schottky catch diodes. |
| Single-pulse avalanche rating EAS = 466 mJ | Allows safe operation during transient overloads (e.g., motor stall, short-circuit events) without derating or snubbers. |
Applications
| Automotive Engine Control Unit (ECU) | Industrial 48 V DC-DC Converter |
|---|---|
Use Scenario: High-side switch for fuel injector or ignition coil driver in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: Power switch controlling 12–48 V inductive loads with precise µs-level on/off timing. Use Value: AEC-Q101 qualification and 466 mJ avalanche energy ensure reliability during load dump and inductive kickback events. |
Use Scenario: Primary-side synchronous rectifier in isolated 48 V to 12 V telecom/data center DC-DC modules. IC Role / Device Role / Timing Role: High-current, low-RDS(ON) switch operating at 200–300 kHz with tight duty-cycle control. Use Value: 2.0 mΩ RDS(ON) and 122 nC Qg enable >96% peak efficiency and minimal thermal footprint at 100 A output. |
| Electric Power Steering (EPS) Motor Driver | Server Rack Battery Backup System |
Use Scenario: Half-bridge leg in three-phase inverter driving 24–48 V brushless EPS motors. IC Role / Device Role / Timing Role: High-current switching element handling 160 A peak phase current with fast PWM edge control. Use Value: Low Ciss (10100 pF) and optimized gate charge reduce switching losses and EMI generation in compact motor control PCBs. |
Use Scenario: OR-ing FET in 48 V battery backup path for server PSUs, replacing ideal diodes. IC Role / Device Role / Timing Role: Bidirectional current-handling switch with low forward drop and controlled turn-on slew rate. Use Value: 100 V VDSS and 160 A ID support hot-swap capability and fault current limiting in redundant power architectures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N10F7 | RDS(ON) = 2.1 mΩ (typ.), Qg = 135 nC, same 100 V/160 A rating, but TO-220FP package (non-isolated drain). | Lacks AEC-Q101 qualification; not approved for automotive underhood use. | Prefer TK160F10N1L,LXGQ for automotive designs requiring qualification; STL220N10F7 suits cost-sensitive industrial SMPS. |
| IXFH160N10P | RDS(ON) = 2.3 mΩ (typ.), Qg = 140 nC, TO-247 package, higher Rth(ch-c) = 0.55 °C/W. | Higher thermal resistance requires larger heatsink; no AEC-Q101 data published. | TK160F10N1L,LXGQ offers better thermal performance and automotive compliance; IXFH160N10P fits legacy TO-247 layouts. |
Compared with STL220N10F7 and IXFH160N10P, the TK160F10N1L,LXGQ provides superior thermal resistance (0.4 °C/W), lower gate charge, and formal AEC-Q101 validation - making it the preferred choice for space-constrained, high-reliability automotive power stages where board area and qualification are decisive.
Availability
TK160F10N1L,LXGQ is available at Aetrix Electronics and suitable for automotive engine control units, industrial 48 V DC-DC converters, and electric power steering motor drivers requiring stable component supply across multi-year production cycles.
Supply support for TK160F10N1L,LXGQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power ICs, and storage solutions with focus on automotive, industrial, and consumer applications.
The TK160F10N1L,LXGQ belongs to Toshiba's U-MOSⅧ-H high-efficiency power MOSFET family, engineered specifically for high-current, high-reliability switching in automotive powertrain and ADAS systems.
FAQ
What is the maximum continuous drain current rating for TK160F10N1L,LXGQ?
The TK160F10N1L,LXGQ is rated for 160 A continuous drain current (ID) at case temperature Tc = 25 °C. This rating assumes proper heatsinking via its TO-220SM(W) drain tab and accounts for thermal limits defined by Rth(ch-c) = 0.4 °C/W. At higher case temperatures, derating applies per the Safe Operating Area curve in the datasheet.
Is TK160F10N1L,LXGQ qualified for automotive applications?
Yes, the TK160F10N1L,LXGQ is fully AEC-Q101 qualified, having passed stress tests including temperature cycling, highly accelerated life testing (HALT), and unclamped inductive switching (UIS). This certification confirms its suitability for underhood automotive applications such as engine control, EPS, and ADAS power supplies.
What is the gate threshold voltage range for TK160F10N1L,LXGQ?
The TK160F10N1L,LXGQ has a gate threshold voltage (Vth) range of 2.5 V to 3.5 V, measured at VDS = 10 V and ID = 1 mA. This enhancement-mode specification ensures predictable turn-on behavior with standard 3.3 V or 5 V logic-level gate drivers, and supports robust noise margin in noisy automotive environments.
Does TK160F10N1L,LXGQ have an integrated body diode, and what are its key parameters?
Yes, the TK160F10N1L,LXGQ includes a monolithic body diode with reverse recovery time trr = 110 ns (typ.) and reverse recovery charge Qrr = 165 nC (typ.) at IDR = 160 A and -dIDR/dt = 50 A/µs. These values enable efficient freewheeling in hard-switched topologies without requiring external Schottky diodes.
What package type does TK160F10N1L,LXGQ use, and how is thermal management implemented?
The TK160F10N1L,LXGQ uses the TO-220SM(W) package (TOSHIBA designation: 2-10W1S), featuring an insulated mounting hole and exposed drain tab that serves as both electrical connection and thermal interface. Thermal management relies on direct mounting to a heatsink or copper pour, leveraging its low Rth(ch-c) of 0.4 °C/W to dissipate up to 375 W at Tc = 25 °C.
TK160F10N1L,LXGQ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- U-MOSVIII-H
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 160A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.4mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 122 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 10100 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 375W (Tc)
- Operating Temperature:
- 175°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-220SM(W)
TK160F10N1L,LXGQ FAQ
1.How can I place an order for TK160F10N1L,LXGQ through Aetrix?
Please submit a Request for Quotation (RFQ) for TK160F10N1L,LXGQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TK160F10N1L,LXGQ reliable?
The price and inventory of TK160F10N1L,LXGQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK160F10N1L,LXGQ is usually 5 days.
3.What payment methods are accepted for TK160F10N1L,LXGQ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK160F10N1L,LXGQ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TK160F10N1L,LXGQ?
TK160F10N1L,LXGQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TK160F10N1L,LXGQ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TK160F10N1L,LXGQ?
For technical support, including TK160F10N1L,LXGQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK160F10N1L,LXGQ requirements.
6.How does Aetrix verify that TK160F10N1L,LXGQ is sourced from the original manufacturer or authorized distributors?
All TK160F10N1L,LXGQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK160F10N1L,LXGQ meets industry standards.
7.What is the process for return or replacement of TK160F10N1L,LXGQ?
All TK160F10N1L,LXGQ units undergo pre-shipment inspection (PSI). If there is an issue with TK160F10N1L,LXGQ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TK160F10N1L,LXGQ part is unused and in its original packaging.
Return procedure for TK160F10N1L,LXGQ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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