Toshiba Semiconductor and Storage TK16A60W5,S4VX

Overview

TK16A60W5,S4VX from Toshiba is a silicon N-channel super-junction MOSFET (DTMOS™) designed for high-voltage switching in offline AC-DC power supplies and DC-DC converters. It delivers 600 V V_DSS, 15.8 A continuous drain current, and ultra-low R_DS(ON) of 0.18 Ω (typ.) at V_GS = 10 V - enabling high-efficiency operation in 65–300 W SMPS designs.

For engineers reviewing the TK16A60W5,S4VX datasheet, TK16A60W5,S4VX pinout, TK16A60W5,S4VX application, or TK16A60W5,S4VX equivalent, this page provides verified electrical specs, TO-220SIS package layout, fast body diode recovery (t_rr = 100 ns), avalanche ruggedness (E_AS = 231 mJ), and real-world selection guidance for industrial and consumer power systems.

Technical Context

This device employs Toshiba's DTMOS™ IV super-junction architecture to achieve low conduction loss without sacrificing switching speed. Its enhancement-mode gate threshold (V_th = 3.0–4.5 V) ensures compatibility with standard 5 V and 10 V gate drivers, while its optimized charge profile (Q_g = 43 nC, Q_gd/Q_gs1 = 27/11 nC) supports ZVS and resonant topologies.

The integrated fast-recovery body diode (t_rr = 100 ns typ., Q_rr = 0.4 µC) reduces switching losses and EMI in hard-switched PFC and LLC half-bridge stages. Thermal design is supported by R_th(ch-c) = 3.13 °C/W and guaranteed safe operating area up to T_ch = 150 °C.

Key Specifications

Pinout & Package

TK16A60W5,S4VX is housed in a TO-220SIS (JEITA SC-67, Toshiba 2-10U1S) package with internal source-isolated drain tab - enabling direct mounting to heatsink without insulating washer. The case is electrically connected to the drain terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with STP16N60DM6 and IPP60R190C7, TK16A60W5,S4VX offers the lowest combined conduction/recovery loss (R_DS(ON) × t_rr product = 18 ns·Ω) and highest E_AS rating - making it optimal for rugged, cost-sensitive offline power supplies where thermal margin is constrained.

Availability

TK16A60W5,S4VX is available at Aetrix Electronics and suitable for AC-DC adapters, LED drivers, and industrial SMPS requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for TK16A60W5,S4VX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with over 50 years of power MOSFET innovation.

The TK16A60W5,S4VX belongs to Toshiba's DTMOS™ IV super-junction MOSFET family, engineered specifically for high-efficiency, high-reliability offline power conversion in consumer, industrial, and lighting applications.

FAQ

What is the maximum continuous drain current for TK16A60W5,S4VX at 100 °C case temperature?

The TK16A60W5,S4VX datasheet specifies I_D = 15.8 A at T_c = 25 °C. At T_c = 100 °C, derating applies: using the absolute maximum rating curve (Fig. 8.15), the usable I_D drops to approximately 9.2 A to maintain T_ch ≤ 150 °C. This value is confirmed by the guaranteed PD vs. T_c curve and thermal resistance R_th(ch-c) = 3.13 °C/W.

Does TK16A60W5,S4VX have an integrated body diode, and what are its key recovery parameters?

Yes, TK16A60W5,S4VX features an integrated fast-recovery body diode characterized in Section 6.4. Its reverse recovery time t_rr is 100 ns (typ.), reverse recovery charge Q_rr is 0.4 µC (typ.), and peak reverse recovery current I_rr is 9.7 A (typ.) under specified test conditions (I_DR = 7.9 A, dI_DR/dt = 100 A/µs). These values are measured and guaranteed per Rev. 5.0.A datasheet.

Is TK16A60W5,S4VX pin-compatible with other TO-220SIS MOSFETs like TK12A60W or TK20A60W?

No - TK16A60W5,S4VX is not pin-compatible with TK12A60W or TK20A60W despite sharing the TO-220SIS package. Pin assignment (Gate-Drain-Source) is identical, but the internal construction differs: TK16A60W5,S4VX uses DTMOS™ IV with optimized charge distribution, whereas TK12A60W is DTMOS™ III and TK20A60W has different R_DS(ON)/Q_g trade-offs. Electrical substitution requires validation of gate drive timing and SOA margins.

What is the isolation voltage rating of the TO-220SIS package used in TK16A60W5,S4VX?

The TO-220SIS package of TK16A60W5,S4VX is rated for V_ISO(RMS) = 2000 V, as stated in the Absolute Maximum Ratings table (Section 4). This isolation is achieved via reinforced molding compound and creepage/clearance design compliant with IEC 60747-17, enabling use in Class II insulated power supplies without additional barrier materials.

How does the gate threshold voltage range of TK16A60W5,S4VX affect drive circuit design?

The TK16A60W5,S4VX has a V_th range of 3.0–4.5 V (V_DS = 10 V, I_D = 0.79 mA), meaning gate drive must exceed 4.5 V to ensure full enhancement across process variation. A 5 V TTL or 10 V CMOS driver is recommended; 3.3 V logic cannot reliably turn on the device. This is explicitly defined in Section 6.1 and validated across temperature.