Toshiba Semiconductor and Storage TK16A60W,S4VX

Overview

TK16A60W,S4VX from Toshiba is a silicon N-channel super-junction MOSFET (DTMOS™) designed for high-voltage switching in offline AC-DC power supplies and DC-DC converters. It delivers 600 V V_DSS, 15.8 A continuous drain current, and ultra-low R_DS(ON) of 0.16 Ω (typ.) at V_GS = 10 V - enabling high-efficiency 65–100 W flyback and LLC resonant converters.

For engineers reviewing the TK16A60W,S4VX datasheet, TK16A60W,S4VX pinout, TK16A60W,S4VX application, or TK16A60W,S4VX equivalent, key selection criteria include its avalanche-rated ruggedness (E_AS = 231 mJ), fast switching (t_on = 50 ns, t_off = 100 ns), integrated body diode with 280 ns reverse recovery time, and TO-220SIS package optimized for thermal performance in compact industrial adapters.

Technical Context

This device employs Toshiba's DTMOS™ IV super-junction architecture to achieve low conduction loss without sacrificing switching speed. Its gate threshold voltage (2.7–3.7 V) ensures compatibility with standard 5 V and 10 V gate drivers while maintaining noise immunity in noisy power environments.

The TK16A60W,S4VX integrates a robust intrinsic body diode with Q_rr = 2.9 µC and dv/dt ruggedness ≥15 V/ns, supporting quasi-resonant and ZVS topologies. Thermal design is supported by R_th(ch-c) = 3.13 °C/W and channel temperature rating up to 150 °C.

Key Specifications

Pinout & Package

TK16A60W,S4VX is housed in a TO-220SIS (JEITA SC-67, Toshiba 2-10U1S) package with isolated tab - enabling direct heatsink mounting without insulating hardware while maintaining creepage/clearance compliance for Class II applications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with STP16N60DM6 and IXTH16N60L2, the TK16A60W,S4VX offers the lowest R_DS(ON) and fully isolated TO-220SIS packaging - delivering superior thermal efficiency and simplified mechanical integration in space-constrained industrial power supplies.

Availability

TK16A60W,S4VX is available at Aetrix Electronics and suitable for industrial AC-DC adapters, server auxiliary power supplies, and LED driver power stages requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for TK16A60W,S4VX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with decades of expertise in high-reliability discrete components.

The TK16A60W,S4VX belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in industrial and commercial power conversion systems.

FAQ

What is the maximum continuous drain current rating for TK16A60W,S4VX?

The TK16A60W,S4VX has a maximum continuous drain current (I_D) of 15.8 A at T_c = 25 °C. This rating assumes proper heatsinking and derating per the R_th(ch-c) = 3.13 °C/W specification. At elevated case temperatures, the current must be reduced linearly to maintain channel temperature ≤150 °C - for example, to ~10 A at T_c = 70 °C. The TK16A60W,S4VX datasheet provides full derating curves in Figure 8.15.

Does TK16A60W,S4VX have an isolated package, and what is its isolation voltage rating?

Yes, the TK16A60W,S4VX uses the TO-220SIS package with electrically isolated metal tab. Its isolation voltage rating is V_ISO(RMS) = 2000 V, verified per safety standards. This eliminates the need for insulating hardware (e.g., mica washers or silicone pads) when mounting directly to a heatsink - simplifying assembly and improving thermal reliability in Class II AC-DC designs. The TK16A60W,S4VX marking and packaging documentation confirm this isolation feature.

What is the typical gate charge profile of TK16A60W,S4VX, and how does it impact gate driver selection?

The TK16A60W,S4VX has a total gate charge (Q_g) of 38 nC (typ.), with Q_gs1 = 9 nC and Q_gd = 16 nC. This moderate Q_g allows use with standard 1-A peak gate drivers (e.g., UCC27531, TC4420) at 100 kHz switching without excessive driver heating. The relatively low Q_gd/Q_g ratio improves Miller immunity. For optimal performance, the TK16A60W,S4VX should be driven with V_GS ≥10 V to fully enhance the channel and minimize R_DS(ON).

How does the body diode performance of TK16A60W,S4VX compare to standard fast-recovery diodes?

The TK16A60W,S4VX features an integrated body diode with t_rr = 280 ns (typ.) and Q_rr = 2.9 µC - significantly softer and lower-charge than standard FRD-based solutions. This reduces voltage overshoot and EMI during commutation in quasi-resonant flyback and LLC converters. Unlike discrete diodes, the body diode shares the same thermal path as the MOSFET channel, ensuring consistent behavior across temperature. The TK16A60W,S4VX datasheet specifies these parameters in Section 6.4 under Source-Drain Characteristics.

Is TK16A60W,S4VX RoHS compliant, and what marking indicates compliance?

Yes, the TK16A60W,S4VX is RoHS compliant. Per Toshiba's marking convention (Section 7), RoHS-compliant units are marked with an underlined lot number and carry the [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] designation. Non-RoHS versions show an unmarked (non-underlined) lot number and [[Pb]]/INCLUDES > MCV. All TK16A60W,S4VX units supplied by Aetrix Electronics meet EU Directive 2011/65/EU requirements, and full compliance documentation is available upon request.