Toshiba Semiconductor and Storage TK16A60W,S4X

Overview

TK16A60W from Toshiba is a silicon N-channel super-junction MOSFET (DTMOS™) designed for high-voltage switching in offline AC-DC power supplies and DC-DC converters. It delivers 600 V V_DSS, 15.8 A continuous drain current, and a typ. R_DS(ON) of 0.16 Ω at V_GS = 10 V, enabling high-efficiency operation in PFC and main switch stages.

For engineers reviewing the TK16A60W datasheet, TK16A60W pinout, TK16A60W application, or TK16A60W equivalent, key selection criteria include its 600 V rating, TO-220SIS package with isolated heatsink capability, avalanche ruggedness (E_AS = 231 mJ), gate threshold range (2.7–3.7 V), and diode reverse recovery performance (t_rr = 280 ns, Q_rr = 2.9 µC).

Technical Context

This device employs Toshiba's DTMOS™ structure to achieve low on-resistance and fast switching with controlled dv/dt (≥50 V/ns). Its enhancement-mode operation and gate threshold voltage (2.7–3.7 V) ensure compatibility with standard 10 V gate drivers while maintaining noise immunity.

The integrated body diode exhibits t_rr = 280 ns and Q_rr = 2.9 µC under specified conditions (I_DR = 7.9 A, dI_DR/dt = 100 A/µs), supporting quasi-resonant and hard-switched topologies. Thermal resistance R_th(ch-c) = 3.13 °C/W enables high-power dissipation when mounted on heatsinks.

Key Specifications

Pinout & Package

TK16A60W is housed in a TO-220SIS (JEITA SC-67) package with internal isolation between the drain-connected tab and leads, enabling direct heatsink mounting without insulating hardware. The case is electrically connected to the drain terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with STP16NF60FD and IPP60R190C7, the TK16A60W offers unique drain-isolation in TO-220SIS, tighter V_th control, and superior single-pulse avalanche capability-making it optimal for space-constrained, high-reliability industrial power supplies where mechanical simplification and surge robustness are prioritized.

Availability

TK16A60W is available at Aetrix Electronics and suitable for AC-DC power adapters, industrial switching power supplies, and LED streetlight drivers requiring stable component supply and long-term lifecycle support.

Supply support for TK16A60W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with decades of expertise in high-voltage MOSFET design.

The TK16A60W belongs to Toshiba's DTMOS™ IV super-junction MOSFET family, engineered specifically for high-efficiency, high-reliability offline power conversion in industrial, lighting, and consumer applications.

FAQ

What is the maximum continuous drain current rating for TK16A60W?

The TK16A60W has a maximum continuous drain current (I_D) of 15.8 A at case temperature T_c = 25 °C. This rating decreases with rising case temperature per the derating curve in Figure 8.15; at T_c = 100 °C, the usable I_D drops to approximately 8.5 A. Designers must verify thermal design to maintain T_ch ≤ 150 °C under worst-case load and ambient conditions.

Does TK16A60W have an isolated package, and what is its isolation voltage rating?

Yes, the TK16A60W uses the TO-220SIS package with internal electrical isolation between the drain-connected metal tab and the lead frame. Its isolation voltage rating is V_ISO(RMS) = 2000 V, verified per safety standards. This eliminates the need for external insulating hardware when mounting to grounded heatsinks, simplifying mechanical design and improving thermal performance.

What is the typical gate threshold voltage range for TK16A60W, and how does it affect drive circuit design?

The TK16A60W has a gate threshold voltage (V_th) range of 2.7 V to 3.7 V at V_DS = 10 V and I_D = 0.79 mA. This tight distribution ensures consistent turn-on behavior across units and temperatures. It allows reliable operation with standard 10 V gate drivers while providing sufficient noise margin against spurious turn-on in noisy power environments.

How does the body diode performance of TK16A60W compare to standard MOSFETs in flyback applications?

The TK16A60W body diode has t_rr = 280 ns and Q_rr = 2.9 µC under defined test conditions (I_DR = 7.9 A, dI_DR/dt = 100 A/µs). Compared to conventional planar MOSFETs, this optimized recovery reduces voltage overshoot and EMI in discontinuous conduction mode (DCM) flyback converters, improving system reliability and easing EMI filter design.

Is TK16A60W RoHS compliant, and what marking indicates compliance?

Yes, TK16A60W is RoHS compliant. Per Toshiba documentation, RoHS-compliant units are marked with an underlined lot number and carry the [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] designation. Non-RoHS versions display an unmarked (non-underlined) lot number and [[Pb]]/INCLUDES > MCV. Always verify marking on received units and consult Toshiba's latest environmental compliance reports for full substance declarations.