Toshiba Semiconductor and Storage TK16E60W5,S1VX

Overview

TK16E60W5,S1VX from Toshiba is a silicon N-channel super-junction MOSFET (DTMOS™) designed for high-voltage switching in offline AC-DC power supplies and DC-DC converters. It delivers 600 V V_DSS, 0.18 Ω R_DS(ON) (typ.), 15.8 A I_D (DC), and fast 100 ns reverse recovery time, enabling efficient operation in 65–100 W flyback and LLC resonant topologies.

For engineers reviewing the TK16E60W5,S1VX datasheet, TK16E60W5,S1VX pinout, TK16E60W5,S1VX application, or TK16E60W5,S1VX equivalent, key selection criteria include its TO-220 package thermal performance (R_th(ch-c) = 0.962 °C/W), gate threshold voltage range (3–4.5 V), avalanche energy rating (194 mJ), and integrated body diode ruggedness (dv/dt ≥ 50 V/ns).

Technical Context

This device implements Toshiba's DTMOS™ IV super-junction architecture to achieve low conduction loss while maintaining robust switching behavior. Its enhancement-mode gate structure operates with V_th = 3–4.5 V at V_DS = 10 V and I_D = 0.79 mA, supporting standard 10 V gate drive in isolated flyback controllers.

The integrated body diode features trr = 100 ns (typ.) and Q_rr = 0.4 µC, reducing switching losses during hard-commutation transitions. Dynamic parameters-including C_iss = 1350 pF, C_oss = 35 pF, and Q_gd = 27 nC-support stable ZVS operation in resonant converters up to 300 kHz.

Key Specifications

Pinout & Package

TK16E60W5,S1VX is housed in a through-hole TO-220 package (Toshiba designation: 2-10X1A), with the drain connected internally to the metal tab for direct heatsinking. The package weighs 1.93 g and complies with RoHS requirements.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching applications.

Compared with STP16N60DM6 and IPP60R190C7, TK16E60W5,S1VX offers superior thermal resistance (0.962 °C/W vs. >2.0 °C/W for DPAK), lower Q_gd, and verified fast trr-making it optimal for thermally demanding, high-reliability flyback and LLC designs requiring bolted heatsinks and minimal EMI.

Availability

TK16E60W5,S1VX is available at Aetrix Electronics and suitable for AC-DC adapters, industrial flyback SMPS, and server power supply designs requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for TK16E60W5,S1VX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with core expertise in high-efficiency power conversion technologies.

TK16E60W5,S1VX belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-voltage, high-frequency switching power supplies targeting 80 PLUS Titanium and 80 PLUS Platinum efficiency standards.

FAQ

What is the gate threshold voltage range for TK16E60W5,S1VX?

The TK16E60W5,S1VX has a gate threshold voltage (V_th) range of 3.0 V to 4.5 V, measured at V_DS = 10 V and I_D = 0.79 mA. This enhancement-mode specification ensures reliable turn-on with standard 5 V or 10 V gate drivers and stable turn-off at 0 V, making TK16E60W5,S1VX suitable for use with common PWM controllers like UC3845 or UCC28780 without level-shifting circuitry.

Does TK16E60W5,S1VX include an integrated body diode, and what are its recovery characteristics?

Yes, TK16E60W5,S1VX integrates a fast-recovery body diode with reverse recovery time (t_rr) of 100 ns (typ.) and reverse recovery charge (Q_rr) of 0.4 µC, tested at I_DR = 7.9 A and dI_DR/dt = 100 A/µs. These values enable reduced switching loss and voltage overshoot in DCM flyback and quasi-resonant converters, distinguishing TK16E60W5,S1VX from standard MOSFETs with slower diodes.

What is the maximum continuous drain current rating for TK16E60W5,S1VX at T_c = 25 °C?

The maximum continuous drain current (I_D) for TK16E60W5,S1VX is 15.8 A at case temperature (T_c) = 25 °C, per Toshiba's Absolute Maximum Ratings table. Derating applies above 25 °C-e.g., at T_c = 100 °C, the usable I_D drops to approximately 8.5 A-so thermal design must ensure T_c remains within safe limits to sustain full-rated current in TK16E60W5,S1VX applications.

Is TK16E60W5,S1VX avalanche-rated, and what is its single-pulse energy capability?

Yes, TK16E60W5,S1VX is fully avalanche-rated with a guaranteed single-pulse avalanche energy (E_AS) of 194 mJ, tested under V_DD = 90 V, T_ch = 25 °C, L = 21.2 mH, R_G = 25 Ω, and I_AR = 4.0 A. This rating allows TK16E60W5,S1VX to safely absorb inductive energy during overvoltage events in unclamped topologies, reducing or eliminating the need for external snubber networks in flyback and forward converter designs.

What package type does TK16E60W5,S1VX use, and how is the drain terminal connected?

TK16E60W5,S1VX uses a TO-220 package (Toshiba designation: 2-10X1A), with Pin 2 (Drain) electrically connected to the metal tab for direct heatsinking. This configuration requires electrical isolation (e.g., mica washer + shoulder washer) when mounting to a grounded heatsink, as the drain is not internally insulated. The package's R_th(ch-c) = 0.962 °C/W enables efficient thermal transfer critical for sustained 130 W power dissipation in TK16E60W5,S1VX-based designs.