Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK16G60W,RVQ

Name: TK16G60W,RVQ
Brand: Toshiba Semiconductor and Storage
SKU: TK16G60W,RVQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: TK16G60W,RVQ

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: TK16G60W,RVQ.pdf

Description:: MOSFET N CH 600V 15.8A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:984

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

TK16G60W,RVQ from Toshiba is a silicon N-channel MOSFET using DTMOS™ Super Junction technology, designed for high-voltage switching in offline power supplies. It delivers 600 V V_DSS, 15.8 A continuous drain current, and low R_DS(ON) of 0.16 Ω (typ.) at V_GS = 10 V, enabling efficient operation in AC-DC adapters and industrial SMPS.

For engineers reviewing the TK16G60W,RVQ datasheet, TK16G60W,RVQ pinout, TK16G60W,RVQ application, or TK16G60W,RVQ equivalent, key selection criteria include avalanche ruggedness (E_AS = 194 mJ), gate threshold voltage range (2.7–3.7 V), thermal resistance (R_th(ch-c) = 0.962 °C/W), and D2PAK package suitability for heatsink-mounted high-power designs.

Technical Context

This device implements a planar-gate Super Junction structure to achieve high breakdown voltage with low on-resistance. Its enhancement-mode operation requires positive gate drive only, and its body diode exhibits 280 ns reverse recovery time with 2.9 µC Q_rr under specified conditions.

The TK16G60W,RVQ supports hard-switched topologies with guaranteed dv/dt ruggedness ≥50 V/ns and single-pulse avalanche capability up to 4.0 A. Gate charge parameters (Q_g = 38 nC, Q_gd = 16 nC) indicate moderate drive strength requirements for 400 V bus applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - supports universal-input offline SMPS without derating in 230 VAC mains systems
R_DS(ON)	0.16 Ω (typ.) - reduces conduction loss in 15–20 W to 100 W power stages
I_D (DC)	15.8 A - enables use with 130 W P_D at T_c = 25°C in thermally optimized layouts
E_AS	194 mJ - provides margin against inductive switching stress in flyback and LLC resonant converters
V_th	2.7–3.7 V - ensures reliable turn-on with standard 5 V or 3.3 V logic-level gate drivers
R_th(ch-c)	0.962 °C/W - allows direct mounting to heatsink for thermal management without thermal interface material overspec
Q_g	38 nC - determines gate driver current requirement (~1.5 A peak for 25 ns rise time)

Pinout & Package

Package: D2PAK (TOSHIBA designation 2-11H1A), surface-mount, isolated heatsink tab (Drain connected to tab). Weight: 1.59 g (typ.).

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives gate drive signal; sensitive to ESD; requires low-impedance path to minimize ringing
2 (Drain)	High-voltage power terminal	Connected to heatsink tab; carries full switching current and must be electrically isolated from PCB ground plane
3 (Source)	Power return / reference node	Serves as local ground reference for gate drive; layout must minimize inductance to prevent shoot-through

Key Features

Feature	Design Value
DTMOS™ Super Junction structure	Enables 600 V rating with R_DS(ON) 30% lower than conventional planar MOSFETs of same die size
Enhancement-mode gate	Eliminates need for negative bias or complex level-shifting in high-side configurations
Guaranteed avalanche energy	194 mJ single-pulse rating supports robustness in unclamped inductive switching events
Low Q_gd/Q_g ratio	16/38 nC = 0.42 - improves hard-switching efficiency by reducing Miller plateau duration
Body diode with controlled Q_rr	2.9 µC reverse recovery charge enables predictable snubber design in quasi-resonant topologies

Applications

Server PSU Primary Switch	Industrial AC-DC Adapter
Use Scenario: High-efficiency 80 PLUS Titanium server power supply operating at 400 V DC bus with active clamp flyback topology. IC Role / Device Role / Timing Role: Main switching transistor handling primary-side 15.8 A peak current at 100 kHz switching frequency. Use Value: Low R_DS(ON) and 194 mJ E_AS reduce conduction loss and improve reliability during transient overloads.	Use Scenario: 65 W industrial-grade AC-DC adapter for factory automation controllers with wide input range (85–264 VAC). IC Role / Device Role / Timing Role: Primary-side switch in discontinuous conduction mode (DCM) flyback converter. Use Value: 2.7–3.7 V V_th ensures compatibility with low-voltage gate drivers; D2PAK package enables mechanical stability under vibration.
LED Driver Power Stage	UPS Inverter Half-Bridge
Use Scenario: Constant-current LED driver for outdoor signage with 600 V isolation barrier and surge immunity. IC Role / Device Role / Timing Role: High-side switch in buck-derived constant-current regulator driving 48 V string at 1.2 A. Use Value: 600 V V_DSS withstands lightning-induced surges; low Q_g enables clean 500 kHz PWM control.	Use Scenario: 1 kVA online UPS inverter stage converting 360 V DC bus to 230 V AC output via H-bridge configuration. IC Role / Device Role / Timing Role: Low-side switch in half-bridge leg, conducting 15.8 A RMS with 100 ns dead-time control. Use Value: R_th(ch-c) = 0.962 °C/W allows direct heatsink mounting without thermal vias, simplifying thermal design.

Server PSU Primary Switch

Industrial AC-DC Adapter

Use Scenario: High-efficiency 80 PLUS Titanium server power supply operating at 400 V DC bus with active clamp flyback topology.

IC Role / Device Role / Timing Role: Main switching transistor handling primary-side 15.8 A peak current at 100 kHz switching frequency.

Use Value: Low R_DS(ON) and 194 mJ E_AS reduce conduction loss and improve reliability during transient overloads.

Use Scenario: 65 W industrial-grade AC-DC adapter for factory automation controllers with wide input range (85–264 VAC).

IC Role / Device Role / Timing Role: Primary-side switch in discontinuous conduction mode (DCM) flyback converter.

Use Value: 2.7–3.7 V V_th ensures compatibility with low-voltage gate drivers; D2PAK package enables mechanical stability under vibration.

LED Driver Power Stage

UPS Inverter Half-Bridge

Use Scenario: Constant-current LED driver for outdoor signage with 600 V isolation barrier and surge immunity.

IC Role / Device Role / Timing Role: High-side switch in buck-derived constant-current regulator driving 48 V string at 1.2 A.

Use Value: 600 V V_DSS withstands lightning-induced surges; low Q_g enables clean 500 kHz PWM control.

Use Scenario: 1 kVA online UPS inverter stage converting 360 V DC bus to 230 V AC output via H-bridge configuration.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge leg, conducting 15.8 A RMS with 100 ns dead-time control.

Use Value: R_th(ch-c) = 0.962 °C/W allows direct heatsink mounting without thermal vias, simplifying thermal design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16N60DM6	600 V, 16 A, R_DS(ON) = 0.17 Ω (typ.), DPAK package, lower E_AS (120 mJ)	Limited to lower-power (<80 W) designs due to higher thermal resistance (R_th(j-a) ≈ 62 °C/W vs. TK16G60W,RVQ's 0.962 °C/W heatsink path)	Prefer TK16G60W,RVQ when heatsink mounting and avalanche margin are critical
IXTH16N60L2	600 V, 16 A, R_DS(ON) = 0.18 Ω (typ.), TO-247 package, higher Q_g (52 nC)	Requires larger PCB footprint and more gate drive power; better suited for forced-air-cooled industrial inverters	Choose TK16G60W,RVQ for space-constrained, heatsink-integrated designs with tight gate drive budgets

Compared with STP16N60DM6 and IXTH16N60L2, the TK16G60W,RVQ offers superior thermal coupling via D2PAK heatsink tab and higher single-pulse avalanche energy-critical for unclamped inductive loads-while maintaining competitive R_DS(ON) and gate charge in a compact surface-mount form factor.

Availability

TK16G60W,RVQ is available at Aetrix Electronics and suitable for industrial AC-DC adapters, server power supplies, and LED driver power stages requiring stable component supply and long-term manufacturability.

Supply support for TK16G60W,RVQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with global manufacturing and quality certification.

The TK16G60W,RVQ belongs to Toshiba's DTMOS™ IV Super Junction MOSFET product line, engineered for high-efficiency, high-reliability switching in 600 V offline power conversion systems.

FAQ

What is the maximum continuous drain current rating for TK16G60W,RVQ?

The TK16G60W,RVQ has a maximum continuous drain current (I_D) of 15.8 A at case temperature T_c = 25°C. This rating assumes proper heatsinking; derating is required above 25°C per the R_th(ch-c) = 0.962 °C/W thermal resistance. At T_c = 100°C, the usable I_D drops to approximately 8.2 A based on linear derating.

Does TK16G60W,RVQ have avalanche capability, and how is it specified?

Yes, the TK16G60W,RVQ is rated for single-pulse avalanche energy (E_AS) of 194 mJ under defined test conditions (V_DD = 90 V, T_ch = 25°C, L = 21.2 mH, R_G = 25 Ω, I_AR = 4.0 A). This specification confirms ruggedness against inductive switching transients but does not imply repetitive avalanche operation.

What is the gate threshold voltage range for TK16G60W,RVQ, and why does it matter?

The TK16G60W,RVQ has a gate threshold voltage (V_th) range of 2.7 V to 3.7 V at V_DS = 10 V and I_D = 0.79 mA. This range ensures reliable turn-on with standard 3.3 V or 5 V gate drivers while avoiding unintended conduction due to noise-critical for stable operation in noisy industrial environments.

Can TK16G60W,RVQ be used in place of older DTMOS™ III devices like TK16E60W?

While both share the DTMOS™ architecture and 600 V rating, the TK16G60W,RVQ (DTMOS™ IV) offers improved R_DS(ON) (0.16 Ω vs. 0.18 Ω typ.), lower Q_gd, and enhanced avalanche ruggedness versus TK16E60W. Pinout and package are identical (D2PAK), making it a validated upgrade path where higher efficiency or reliability is required.

What thermal considerations apply to TK16G60W,RVQ in PCB layout?

The TK16G60W,RVQ uses a D2PAK package with Drain connected to the exposed heatsink tab. Layout must provide a large, low-thermal-resistance copper area (≥200 mm²) directly under the tab, preferably with multiple thermal vias to inner-layer ground planes. Avoid routing signal traces beneath the tab, and ensure mechanical mounting pressure is uniform to maximize thermal contact.

TK16G60W,RVQ Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: DTMOSIV

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 15.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 190mOhm @ 7.9A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 790µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1350 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 130W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

TK16G60W,RVQ FAQ

1.How can I place an order for TK16G60W,RVQ through Aetrix?

Please submit a Request for Quotation (RFQ) for TK16G60W,RVQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK16G60W,RVQ reliable?

The price and inventory of TK16G60W,RVQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK16G60W,RVQ is usually 5 days.

3.What payment methods are accepted for TK16G60W,RVQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK16G60W,RVQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK16G60W,RVQ?

TK16G60W,RVQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK16G60W,RVQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK16G60W,RVQ?

For technical support, including TK16G60W,RVQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK16G60W,RVQ requirements.

6.How does Aetrix verify that TK16G60W,RVQ is sourced from the original manufacturer or authorized distributors?

All TK16G60W,RVQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK16G60W,RVQ meets industry standards.

7.What is the process for return or replacement of TK16G60W,RVQ?

All TK16G60W,RVQ units undergo pre-shipment inspection (PSI). If there is an issue with TK16G60W,RVQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK16G60W,RVQ part is unused and in its original packaging.

Return procedure for TK16G60W,RVQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…