Toshiba Semiconductor and Storage TK16J60W5,S1VQ

Overview

TK16J60W5,S1VQ from Toshiba is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline power supplies and DC-DC converters. It delivers 600 V drain-source breakdown voltage, 0.18 Ω typical R_DS(ON) at V_GS = 10 V, and 100 ns typical reverse recovery time (t_rr), enabling efficient operation in 15.8 A continuous drain current applications such as AC-DC adapters and industrial SMPS.

For engineers reviewing the TK16J60W5,S1VQ datasheet, TK16J60W5,S1VQ pinout, TK16J60W5,S1VQ application, or TK16J60W5,S1VQ equivalent, key selection criteria include its TO-3P(N) package thermal performance (R_th(ch-c) = 0.962 °C/W), gate threshold voltage range (3–4.5 V), and avalanche energy rating (231 mJ), critical for robust flyback and PFC stage design.

Technical Context

The TK16J60W5,S1VQ implements Toshiba's DTMOS™ IV super-junction architecture to achieve low conduction loss while maintaining fast switching. Its 43 nC total gate charge (Q_g) and 27 nC gate-drain charge (Q_gd) support optimized hard-switching efficiency in 65–100 kHz power topologies.

Designed for unclamped inductive switching, it features guaranteed single-pulse avalanche capability (E_AS = 231 mJ at T_c = 25 °C) and 50 V/ns dv/dt ruggedness-enabling reliable operation without snubbers in high-noise industrial environments.

Key Specifications

Pinout & Package

TK16J60W5,S1VQ is housed in a TO-3P(N) package (JEITA SC-65, Toshiba 2-16C1S), featuring isolated metal tab for direct heatsink mounting and 4.6 g typical weight. The case serves as the drain terminal, optimizing thermal path from channel to heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with STW20NK60Z and IPP60R190C6, the TK16J60W5,S1VQ offers superior thermal performance (0.962 °C/W vs. ≥1.5 °C/W), faster body diode recovery (100 ns vs. ≥120 ns), and lower gate charge-making it optimal for space-constrained, high-efficiency 600 V SMPS where heatsink integration and switching loss are critical.

Availability

TK16J60W5,S1VQ is available at Aetrix Electronics and suitable for AC-DC adapters, industrial SMPS, and LED driver power supplies requiring stable component supply across multi-year production cycles.

Supply support for TK16J60W5,S1VQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a global semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with decades of expertise in high-reliability power MOSFET design.

The TK16J60W5,S1VQ belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-power-density offline switching applications including server PSUs, industrial power supplies, and renewable energy inverters.

FAQ

What is the maximum continuous drain current rating for TK16J60W5,S1VQ?

The TK16J60W5,S1VQ has a maximum continuous drain current (I_D) rating of 15.8 A at T_c = 25 °C. This rating assumes proper heatsinking via the TO-3P(N) metal tab; actual usable current depends on PCB layout, ambient temperature, and thermal interface quality. At elevated case temperatures, derating applies per the datasheet's PD–T_c curve (Figure 8.15).

Does TK16J60W5,S1VQ include an integrated body diode, and what are its key recovery characteristics?

Yes, the TK16J60W5,S1VQ features an integrated fast-recovery body diode with 100 ns typical reverse recovery time (t_rr) and 0.4 µC typical reverse recovery charge (Q_rr). These values are measured at I_DR = 7.9 A, V_GS = 0 V, and dI_DR/dt = 100 A/µs. The diode supports efficient operation in quasi-resonant and synchronous rectification topologies without external Schottky supplementation.

What is the gate threshold voltage range for TK16J60W5,S1VQ, and how does it affect drive circuit compatibility?

The TK16J60W5,S1VQ has a gate threshold voltage (V_th) range of 3.0–4.5 V (measured at V_DS = 10 V, I_D = 0.79 mA). This range ensures compatibility with standard 5 V and 12 V PWM controllers and gate drivers, providing noise immunity while avoiding unintended turn-on during startup or transient conditions. The TK16J60W5,S1VQ does not require negative gate bias for safe operation.

Is TK16J60W5,S1VQ RoHS compliant, and what marking indicates compliance?

Yes, the TK16J60W5,S1VQ is RoHS compliant. Per Toshiba documentation, RoHS-compliant units are marked with an underlined lot number and carry [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] labeling. Non-underlined markings indicate lead-containing versions. Always verify compliance status using the date code and packaging label per the official Toshiba marking guide (Rev. 2.0, February 2014).

What thermal resistance values define the thermal performance of TK16J60W5,S1VQ in its TO-3P(N) package?

The TK16J60W5,S1VQ specifies a channel-to-case thermal resistance (R_th(ch-c)) of 0.962 °C/W (max), measured with the metal tab directly mounted to a heatsink. Its channel-to-ambient value (R_th(ch-a)) is 50 °C/W (max) in free-air conditions. These values confirm the TO-3P(N) package's suitability for high-power applications where low thermal impedance between die and heatsink is essential-critical for sustaining 130 W power dissipation without exceeding 150 °C channel temperature.