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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK16J60W,S1VE

Name: TK16J60W,S1VE
Brand: Toshiba Semiconductor and Storage
SKU: TK16J60W,S1VE
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK16J60W,S1VE

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-3P-3, SC-65-3

Datasheet:: TK16J60W,S1VE.pdf

Description:: X35 PB-F POWER MOSFET TRANSISTOR

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Product details

Overview

TK16J60W,S1VE from Toshiba is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline AC-DC power supplies and DC-DC converters. It delivers 600 V V_DSS, 15.8 A continuous drain current, and a low R_DS(ON) of 0.16 Ω (typ.) at V_GS = 10 V, enabling efficient operation in 65–100 W server SMPS and industrial auxiliary power units.

For engineers reviewing the TK16J60W,S1VE datasheet, TK16J60W,S1VE pinout, TK16J60W,S1VE application, or TK16J60W,S1VE equivalent, key selection criteria include avalanche ruggedness (E_AS = 231 mJ), diode reverse recovery performance (t_rr = 280 ns), gate charge (Q_g = 38 nC), and thermal resistance (R_th(ch-c) = 0.962 °C/W) under TO-3P(N) mounting conditions.

Technical Context

This device implements Toshiba's DTMOS™ IV super-junction architecture to achieve high breakdown voltage with low conduction loss. Its enhancement-mode gate threshold (V_th = 2.7–3.7 V) ensures reliable turn-on with standard 10 V gate drivers while maintaining low static power consumption.

The integrated body diode exhibits controlled reverse recovery (Q_rr = 2.9 µC, I_rr = 23 A) and dv/dt ruggedness ≥15 V/ns, supporting hard-switched topologies without external snubbers. Thermal design is anchored by a channel-to-case resistance of 0.962 °C/W, requiring direct heatsink mounting via the drain-connected tab.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - supports universal-input offline SMPS designs up to 400 V DC bus with margin
R_DS(ON)	0.16 Ω (typ.) at V_GS = 10 V - reduces conduction loss in 15.8 A continuous applications
I_D (DC)	15.8 A - enables use in 65–100 W high-efficiency power stages without parallel devices
E_AS	231 mJ - provides single-pulse avalanche energy handling for transient overvoltage protection
Q_g	38 nC - determines gate drive power requirement and influences switching loss in 100 kHz+ operation
t_rr	280 ns - limits reverse recovery losses during hard commutation in flyback and LLC resonant converters
R_th(ch-c)	0.962 °C/W - defines minimum heatsink interface thermal resistance needed to maintain T_ch ≤ 150 °C

Pinout & Package

TK16J60W,S1VE is housed in a TO-3P(N) package (JEITA SC-65, Toshiba 2-16C1S), featuring an isolated plastic body with a metal drain tab for direct heatsink mounting. The case weight is 4.6 g (typ.).

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal; requires 10 V drive for full enhancement; sensitive to ESD (±30 V max rating)
2	Drain (Heatsink)	Main high-side current path; electrically connected to metal tab for thermal conduction and mechanical mounting
3	Source	Reference node for gate drive; connects to power ground in low-side switch configurations

Key Features

Feature	Design Value
Super-junction DTMOS™ IV structure	Enables 600 V rating with R_DS(ON) 30% lower than planar MOSFETs of same die size
Enhancement-mode gate	V_th = 2.7–3.7 V ensures clean turn-on with industry-standard PWM controllers and avoids unintended conduction
Low Q_gd/Q_g ratio	Q_gd = 16 nC of total Q_g = 38 nC improves Miller immunity and enables stable high-frequency switching
Body diode with soft recovery	Q_rr = 2.9 µC and t_rr = 280 ns reduce switching noise and EMI in discontinuous conduction mode
Avalanche-rated	Guaranteed E_AS = 231 mJ allows safe operation during inductive load switching transients without external clamping

Applications

Server Auxiliary Power Supply	Industrial PLC Power Module
Use Scenario: 24 V/3 A standby rail generation from rectified 380 V DC bus in rack-mounted servers. IC Role / Device Role / Timing Role: Primary-side high-voltage switch in quasi-resonant flyback converter operating at 65–100 kHz. Use Value: Low R_DS(ON) minimizes no-load losses; avalanche rating absorbs leakage inductance spikes without snubber redesign.	Use Scenario: Isolated 5 V/2 A control rail in DIN-rail mounted programmable logic controller power stage. IC Role / Device Role / Timing Role: High-side switch in active clamp forward converter with 100 kHz fixed frequency. Use Value: Tight V_th distribution ensures consistent turn-on timing across temperature; low C_iss = 1350 pF eases gate driver selection.
LED Driver for High-Bay Lighting	Telecom Rectifier Module
Use Scenario: Constant-current output stage driving 100 W LED arrays from 277 V AC mains input. IC Role / Device Role / Timing Role: Main switching element in interleaved PFC + LLC dual-stage topology. Use Value: 63.2 A pulsed current rating supports peak loads; dv/dt ruggedness ≥15 V/ns prevents false triggering during line surges.	Use Scenario: 48 V/20 A output stage in -48 V telecom rectifier with hold-up time >20 ms. IC Role / Device Role / Timing Role: Synchronous rectifier replacement in secondary-side synchronous buck converter. Use Value: Body diode t_rr and Q_rr enable zero-voltage switching assist; R_th(ch-c) = 0.962 °C/W supports compact heatsink integration.

Server Auxiliary Power Supply

Industrial PLC Power Module

Use Scenario: 24 V/3 A standby rail generation from rectified 380 V DC bus in rack-mounted servers.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch in quasi-resonant flyback converter operating at 65–100 kHz.

Use Value: Low R_DS(ON) minimizes no-load losses; avalanche rating absorbs leakage inductance spikes without snubber redesign.

Use Scenario: Isolated 5 V/2 A control rail in DIN-rail mounted programmable logic controller power stage.

IC Role / Device Role / Timing Role: High-side switch in active clamp forward converter with 100 kHz fixed frequency.

Use Value: Tight V_th distribution ensures consistent turn-on timing across temperature; low C_iss = 1350 pF eases gate driver selection.

LED Driver for High-Bay Lighting

Telecom Rectifier Module

Use Scenario: Constant-current output stage driving 100 W LED arrays from 277 V AC mains input.

IC Role / Device Role / Timing Role: Main switching element in interleaved PFC + LLC dual-stage topology.

Use Value: 63.2 A pulsed current rating supports peak loads; dv/dt ruggedness ≥15 V/ns prevents false triggering during line surges.

Use Scenario: 48 V/20 A output stage in -48 V telecom rectifier with hold-up time >20 ms.

IC Role / Device Role / Timing Role: Synchronous rectifier replacement in secondary-side synchronous buck converter.

Use Value: Body diode t_rr and Q_rr enable zero-voltage switching assist; R_th(ch-c) = 0.962 °C/W supports compact heatsink integration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16N60DM6	R_DS(ON) = 0.18 Ω (typ.), Q_g = 35 nC, TO-247 package with insulated tab	Higher thermal resistance (R_th(ch-c) = 1.0 °C/W); requires different mounting hardware	Preferred where insulation from heatsink is mandatory; slightly higher conduction loss
IPP60R190C7	R_DS(ON) = 0.19 Ω (typ.), Q_g = 42 nC, TO-220FP package with non-isolated drain	Lower power dissipation limit (PD = 83 W); unsuitable for >80 W continuous operation	Cost-effective option for lower-power industrial SMPS where thermal headroom permits

Compared with STP16N60DM6 and IPP60R190C7, TK16J60W,S1VE offers the lowest R_DS(ON) and highest avalanche energy in TO-3P(N), making it optimal for thermally constrained 65–100 W high-reliability power supplies where heatsink mass is limited.

Availability

TK16J60W,S1VE is available at Aetrix Electronics and suitable for server auxiliary power supplies, industrial PLC power modules, high-bay LED drivers, and telecom rectifier modules requiring stable component supply and long-term lifecycle support.

Supply support for TK16J60W,S1VE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs for industrial, automotive, and consumer applications.

The TK16J60W,S1VE belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-reliability offline switching power supplies operating above 400 V DC input.

FAQ

What is the maximum continuous drain current rating for TK16J60W,S1VE?

The TK16J60W,S1VE has a maximum continuous drain current (I_D) of 15.8 A at T_c = 25 °C. This rating assumes proper heatsinking to maintain channel temperature ≤150 °C. At elevated case temperatures, derating applies per the PD vs. T_c curve (Fig. 8.15), with 130 W power dissipation at T_c = 25 °C.

Does TK16J60W,S1VE have avalanche capability, and how is it specified?

Yes, TK16J60W,S1VE is fully avalanche-rated with guaranteed single-pulse avalanche energy (E_AS) of 231 mJ at T_ch = 25 °C (V_DD = 90 V, L = 25.3 mH, R_G = 25 Ω, I_AR = 4.0 A). This specification enables robust operation during inductive switching transients without external clamping circuits.

What package type does TK16J60W,S1VE use, and is the drain electrically isolated?

TK16J60W,S1VE uses the TO-3P(N) package (JEITA SC-65), with Pin 2 (Drain) directly connected to the metal heatsink tab. The tab is **not electrically isolated**, requiring insulating hardware (e.g., silicone pad + shoulder washer) when mounted to a grounded heatsink.

How does the body diode performance of TK16J60W,S1VE compare to standard MOSFETs?

The TK16J60W,S1VE features a fast, soft-recovery body diode with t_rr = 280 ns and Q_rr = 2.9 µC (at I_DR = 7.9 A, dI_DR/dt = 100 A/µs). This outperforms typical planar MOSFETs in flyback and LLC converters by reducing switching losses and EMI generation during reverse recovery.

Is TK16J60W,S1VE RoHS compliant, and what marking indicates compliance?

Yes, TK16J60W,S1VE is RoHS compliant. Per Toshiba documentation, RoHS-compliant units are marked with an underlined lot number and carry the [[G]]/RoHS or [[G]]/RoHS [[Pb]] designation. Non-compliant versions (with lead) show an unmarked or [[Pb]]/INCLUDES > MCV label.

TK16J60W,S1VE Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: TO-3P-3, SC-65-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 15.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 190mOhm @ 7.9A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 790µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1350 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 130W (Tc)

Operating Temperature:: 150°C

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-3P(N)

TK16J60W,S1VE FAQ

1.How can I place an order for TK16J60W,S1VE through Aetrix?

Please submit a Request for Quotation (RFQ) for TK16J60W,S1VE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK16J60W,S1VE reliable?

The price and inventory of TK16J60W,S1VE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK16J60W,S1VE is usually 5 days.

3.What payment methods are accepted for TK16J60W,S1VE?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK16J60W,S1VE transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK16J60W,S1VE?

TK16J60W,S1VE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK16J60W,S1VE order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK16J60W,S1VE?

For technical support, including TK16J60W,S1VE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK16J60W,S1VE requirements.

6.How does Aetrix verify that TK16J60W,S1VE is sourced from the original manufacturer or authorized distributors?

All TK16J60W,S1VE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK16J60W,S1VE meets industry standards.

7.What is the process for return or replacement of TK16J60W,S1VE?

All TK16J60W,S1VE units undergo pre-shipment inspection (PSI). If there is an issue with TK16J60W,S1VE, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK16J60W,S1VE part is unused and in its original packaging.

Return procedure for TK16J60W,S1VE:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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