Toshiba Semiconductor and Storage TK16J60W,S1VQ

Overview

TK16J60W,S1VQ from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline AC-DC power supplies and PFC stages. It delivers 600 V V_DSS, 15.8 A I_D (DC), R_DS(ON) = 0.16 Ω (typ.) at V_GS = 10 V, and operates with gate threshold voltage V_th = 2.7–3.7 V - enabling direct drive from standard PWM controllers in 65–300 W industrial SMPS designs.

For engineers reviewing the TK16J60W,S1VQ datasheet, TK16J60W,S1VQ pinout, TK16J60W,S1VQ application, or TK16J60W,S1VQ equivalent, this page provides verified electrical parameters, thermal performance data, TO-3P(N) package layout, avalanche ruggedness (E_AS = 231 mJ), and design-critical MOSFET dv/dt rating (≥50 V/ns) - all confirmed from Toshiba's Rev. 3.0.A datasheet dated 2026-04-14.

Technical Context

This device implements Toshiba's DTMOS™ IV super-junction architecture to achieve low conduction loss while maintaining robust switching behavior. Its 0.962 °C/W channel-to-case thermal resistance and 130 W power dissipation (T_c = 25 °C) support thermally constrained heatsink designs in compact adapters and open-frame PSUs.

The TK16J60W,S1VQ features integrated body diode with reverse recovery time t_rr = 280 ns (I_DR = 7.9 A) and Q_rr = 2.9 µC, enabling hard-switched operation without external snubbers in boost PFC circuits. Gate charge values (Q_g = 38 nC, Q_gd = 16 nC) are optimized for 65–135 kHz operation with minimal driver loss.

Key Specifications

Pinout & Package

TK16J60W,S1VQ is housed in a TO-3P(N) package (JEITA SC-65, Toshiba 2-16C1S), featuring isolated metal tab for direct heatsink mounting and 4.6 g typical weight. The drain-connected tab serves as primary thermal path; gate and source terminals are insulated leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STW20NK60Z and IXTH16N60L2, the TK16J60W,S1VQ offers superior balance of low R_DS(ON), high avalanche energy, and guaranteed dv/dt immunity - making it optimal for cost-sensitive, thermally constrained, and reliability-critical 600 V SMPS designs where both efficiency and robustness are mandatory.

Availability

TK16J60W,S1VQ is available at Aetrix Electronics and suitable for industrial switching power supplies, server AC-DC rectifiers, and LED driver power stages requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for TK16J60W,S1VQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs for industrial, automotive, and consumer applications - with emphasis on high-reliability, high-efficiency power solutions.

The TK16J60W,S1VQ belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-voltage, high-efficiency switching power conversion in compact, thermally demanding environments.

FAQ

What is the maximum continuous drain current for TK16J60W,S1VQ at 100 °C case temperature?

The TK16J60W,S1VQ has a DC drain current rating of 15.8 A at T_c = 25 °C. At T_c = 100 °C, derating applies per Fig. 8.15: maximum allowable I_D drops to approximately 9.2 A, based on the guaranteed PD–T_c curve and R_DS(ON) increase with temperature. Always verify thermal design using R_th(ch-c) = 0.962 °C/W.

Does TK16J60W,S1VQ have a fully rated avalanche capability, and what is its test condition?

Yes, TK16J60W,S1VQ is fully specified for single-pulse avalanche with E_AS = 231 mJ (guaranteed maximum). Per Note 2 in the datasheet, this is measured under V_DD = 90 V, T_ch = 25 °C (initial), L = 25.3 mH, R_G = 25 Ω, and I_AR = 4.0 A - confirming robustness in unclamped inductive switching events common in relay and solenoid drivers.

Can TK16J60W,S1VQ be used in place of a logic-level MOSFET in 5 V gate drive applications?

No - TK16J60W,S1VQ is not a logic-level MOSFET. Its V_th range is 2.7–3.7 V, and R_DS(ON) is specified at V_GS = 10 V. At V_GS = 5 V, R_DS(ON) rises significantly (>0.4 Ω), increasing conduction loss beyond acceptable limits. Use only with 10–15 V gate drive for full performance.

What is the meaning of the "S1VQ" suffix in TK16J60W,S1VQ?

The "S1VQ" suffix denotes Toshiba's tape-and-reel packaging variant for automated SMT assembly: S1 = standard reel size (1,000 pcs/reel), V = lead-free (RoHS-compliant), Q = qualified for industrial temperature range (−55 °C to +150 °C). This matches the marking note on page 5 of the datasheet referencing [[G]]/RoHS COMPATIBLE labeling.

How does the body diode performance of TK16J60W,S1VQ compare to discrete Schottky alternatives in PFC designs?

The TK16J60W,S1VQ body diode has V_DSF = −1.7 V (max), t_rr = 280 ns, and Q_rr = 2.9 µC - significantly slower and higher forward drop than Schottky diodes, but sufficient for hard-switched boost PFC at ≤100 kHz. Unlike Schottky, it requires no external anti-parallel diode and avoids reverse leakage issues at high temperature, simplifying layout and improving reliability.