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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK16N60W,S1VF

Name: TK16N60W,S1VF
Brand: Toshiba Semiconductor and Storage
SKU: TK16N60W,S1VF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK16N60W,S1VF

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: TK16N60W,S1VF.pdf

Description:: MOSFET N CH 600V 15.8A TO247

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Product details

Overview

TK16N60W,S1VF from Toshiba is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline SMPS and PFC stages. It delivers 600 V V_DSS, 15.8 A continuous drain current, and ultra-low R_DS(ON) of 0.16 Ω (typ.) at V_GS = 10 V - enabling high-efficiency 65–300 W AC/DC adapters and industrial power supplies.

For engineers reviewing the TK16N60W,S1VF datasheet, TK16N60W,S1VF pinout, TK16N60W,S1VF application, or TK16N60W,S1VF equivalent, key selection criteria include avalanche energy rating (231 mJ), gate threshold voltage range (2.7–3.7 V), thermal resistance (0.962 °C/W channel-to-case), and TO-247 package suitability for forced-air or heatsink-cooled designs.

Technical Context

This device implements Toshiba's DTMOS™ IV super-junction architecture to achieve low conduction loss without sacrificing switching speed. Its optimized charge profile - Q_g = 38 nC, Q_gd = 16 nC - supports clean turn-on/turn-off with minimal Miller-induced oscillation in hard-switched topologies.

Designed for unidirectional high-side or low-side switching, TK16N60W,S1VF features an integrated body diode with t_rr = 280 ns and Q_rr = 2.9 µC, enabling reliable operation in discontinuous conduction mode (DCM) PFC and flyback converters where reverse recovery behavior critically impacts EMI and efficiency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - supports universal AC input (85–265 VAC) with ≥2× safety margin in 400 V DC bus applications
R_DS(ON)	0.16 Ω (typ.) - reduces conduction loss to <1.3 W at 7.9 A, enabling thermally constrained PCB layouts
I_D (DC)	15.8 A - sustains full-load current in 200 W+ LLC resonant converters without derating at T_c = 25 °C
E_AS	231 mJ - withstands single-pulse inductive energy in 90 V, 4 A avalanche test, supporting robust overcurrent protection
C_iss	1350 pF - balances drive strength requirements and switching loss; compatible with standard 1–2 A gate drivers
t_r/t_f	25 ns / 5 ns - enables >100 kHz operation with controlled dv/dt (50 V/ns min) to reduce EMI filter burden
T_ch max	150 °C - allows operation up to 125 °C ambient with appropriate heatsinking per R_th(ch-c) = 0.962 °C/W

Pinout & Package

TK16N60W,S1VF is housed in a TO-247 (JEITA SC-65, Toshiba 2-16L1A) package with isolated metal tab (Drain-connected heatsink surface) and 3-terminal configuration optimized for high-power thermal and electrical performance.

Pin/Terminal	Circuit Role	Design Meaning
1: Gate	Control electrode	Receives 10 V logic-level drive; V_th = 2.7–3.7 V ensures compatibility with 3.3 V/5 V microcontrollers via level-shifting or dedicated gate drivers
2: Drain (Heatsink)	High-voltage power terminal	Electrically connected to case; must be insulated from chassis unless system ground topology permits direct heatsink bonding
3: Source	Reference node for gate drive and current sensing	Serves as return path for load current and gate driver loop; layout must minimize inductance to suppress ringing during fast switching

Key Features

Feature	Design Value
Super-junction DTMOS™ IV structure	Enables 0.16 Ω R_DS(ON) at 600 V - 30% lower on-resistance than planar MOSFETs in same package, reducing conduction loss in high-duty-cycle PFC
Low Q_gd/Q_g ratio (0.42)	Improves controllability during Miller plateau; mitigates shoot-through risk in half-bridge configurations without complex dead-time tuning
Body diode with t_rr = 280 ns	Supports ZVS-capable topologies like active clamp forward and asymmetrical half-bridge by limiting reverse recovery charge (Q_rr = 2.9 µC)
Avalanche-rated (E_AS = 231 mJ)	Eliminates need for external snubbers in inductive switching circuits - simplifies BOM and improves reliability in motor drive H-bridges
RoHS-compliant marking [[G]]	Confirms lead-free, halogen-free construction per EU Directive 2011/65/EU - meets environmental compliance for global industrial and consumer shipments

Applications

Server PSU Primary Switch	Industrial AC/DC Adapter
Use Scenario: High-efficiency 80 PLUS Titanium server power supply operating at 100–500 kHz with active clamp forward topology. IC Role / Device Role / Timing Role: Main switch in primary-side power stage handling 300–400 V DC bus and delivering up to 1.2 kW output. Use Value: Low R_DS(ON) and optimized Q_gd reduce total switching + conduction losses below 2.1 W at full load, directly contributing to >96% peak efficiency.	Use Scenario: 240 W industrial AC/DC adapter powering PLC I/O modules with wide ambient temperature range (−40 to +70 °C). IC Role / Device Role / Timing Role: Primary-side switching transistor in quasi-resonant flyback converter with valley-switching control. Use Value: Guaranteed 150 °C channel temperature rating and 0.962 °C/W R_th(ch-c) enable stable operation without fan cooling under sustained 70 °C ambient conditions.
Telecom Rectifier Module	PFC Front-End Stage
Use Scenario: −48 V telecom rectifier module converting 3-phase 400 V AC input to regulated DC output with hot-swap capability. IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge topology managing 600 V transient surges during line faults. Use Value: 231 mJ single-pulse avalanche energy rating absorbs worst-case inductive kickback without failure, eliminating need for clamping Zener networks.	Use Scenario: Boost-type active PFC stage in medical imaging equipment requiring low THD (<5%) and high PF (>0.99) across 50–60 Hz line frequency. IC Role / Device Role / Timing Role: Power switch operating in continuous conduction mode (CCM) at 65–100 kHz with critical gate drive timing. Use Value: Tight V_th tolerance (2.7–3.7 V) and low gate leakage (<1 µA) ensure consistent turn-on behavior across temperature and batch, maintaining PFC stability.

Server PSU Primary Switch

Industrial AC/DC Adapter

Use Scenario: High-efficiency 80 PLUS Titanium server power supply operating at 100–500 kHz with active clamp forward topology.

IC Role / Device Role / Timing Role: Main switch in primary-side power stage handling 300–400 V DC bus and delivering up to 1.2 kW output.

Use Value: Low R_DS(ON) and optimized Q_gd reduce total switching + conduction losses below 2.1 W at full load, directly contributing to >96% peak efficiency.

Use Scenario: 240 W industrial AC/DC adapter powering PLC I/O modules with wide ambient temperature range (−40 to +70 °C).

IC Role / Device Role / Timing Role: Primary-side switching transistor in quasi-resonant flyback converter with valley-switching control.

Use Value: Guaranteed 150 °C channel temperature rating and 0.962 °C/W R_th(ch-c) enable stable operation without fan cooling under sustained 70 °C ambient conditions.

Telecom Rectifier Module

PFC Front-End Stage

Use Scenario: −48 V telecom rectifier module converting 3-phase 400 V AC input to regulated DC output with hot-swap capability.

IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge topology managing 600 V transient surges during line faults.

Use Value: 231 mJ single-pulse avalanche energy rating absorbs worst-case inductive kickback without failure, eliminating need for clamping Zener networks.

Use Scenario: Boost-type active PFC stage in medical imaging equipment requiring low THD (<5%) and high PF (>0.99) across 50–60 Hz line frequency.

IC Role / Device Role / Timing Role: Power switch operating in continuous conduction mode (CCM) at 65–100 kHz with critical gate drive timing.

Use Value: Tight V_th tolerance (2.7–3.7 V) and low gate leakage (<1 µA) ensure consistent turn-on behavior across temperature and batch, maintaining PFC stability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16N60DM6	R_DS(ON) = 0.17 Ω (typ.), Q_g = 42 nC, TO-247 package, same 600 V rating	Higher gate charge increases driver loss; slightly higher R_DS(ON) raises conduction loss by ~6% at 7.9 A	Preferred when STMicroelectronics qualification or existing design reuse is required; requires minor gate driver sizing review
IPP60R190C7	R_DS(ON) = 0.19 Ω (typ.), Q_g = 33 nC, TO-247 package, 600 V rating	Lower Q_g eases drive requirements but higher R_DS(ON) degrades efficiency in high-current, low-frequency PFC	Best suited for soft-switched LLC resonant converters where switching loss dominates; less optimal for hard-switched boost PFC

Compared with STP16N60DM6 and IPP60R190C7, TK16N60W,S1VF offers the lowest R_DS(ON) among the three, delivering superior conduction efficiency in high-current, medium-frequency applications such as CCM PFC and server PSUs - while maintaining balanced Q_gd/Q_g for robust hard-switching behavior.

Availability

TK16N60W,S1VF is available at Aetrix Electronics and suitable for server power supplies, industrial AC/DC adapters, and telecom rectifier modules requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for TK16N60W,S1VF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with decades of expertise in high-reliability discrete components.

TK16N60W,S1VF belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-voltage switching power conversion in industrial, telecom, and computing infrastructure applications.

FAQ

What is the maximum continuous drain current rating for TK16N60W,S1VF?

The TK16N60W,S1VF has a maximum continuous drain current (I_D) of 15.8 A at T_c = 25 °C. This rating assumes proper heatsinking and is derated linearly above 25 °C case temperature per the specified thermal resistance of 0.962 °C/W. At T_c = 100 °C, the usable I_D drops to approximately 8.2 A to maintain T_ch ≤ 150 °C.

Does TK16N60W,S1VF have avalanche capability, and how is it specified?

Yes, TK16N60W,S1VF is fully rated for single-pulse avalanche operation with E_AS = 231 mJ (tested at V_DD = 90 V, I_AR = 4.0 A, L = 25.3 mH, R_G = 25 Ω). This specification confirms its ability to safely absorb inductive energy during overcurrent or short-circuit events without destruction - a key requirement for rugged industrial motor drives and telecom rectifiers.

What is the gate threshold voltage range for TK16N60W,S1VF, and why does it matter?

The gate threshold voltage (V_th) for TK16N60W,S1VF is specified from 2.7 V to 3.7 V at V_DS = 10 V and I_D = 0.79 mA. This tight range ensures predictable turn-on behavior across process variation and temperature, critical for stable operation in digitally controlled PFC and synchronous rectification circuits where gate drive timing directly affects efficiency and THD.

Is TK16N60W,S1VF RoHS compliant, and how is compliance indicated?

Yes, TK16N60W,S1VF is RoHS compliant. Compliance is marked on the device body with an underlined lot number prefix [[G]], indicating "RoHS COMPATIBLE" per Toshiba's marking convention. This confirms adherence to EU Directive 2011/65/EU, including restrictions on lead, mercury, cadmium, hexavalent chromium, PBB, and PBDE.

How does the body diode performance of TK16N60W,S1VF compare to standard MOSFETs?

The body diode in TK16N60W,S1VF exhibits t_rr = 280 ns and Q_rr = 2.9 µC at I_DR = 7.9 A, significantly improved over legacy planar MOSFETs. This fast, low-charge recovery minimizes switching loss and EMI in flyback and active-clamp topologies - enabling cleaner zero-voltage switching transitions and reduced snubber losses compared to non-optimized devices.

TK16N60W,S1VF Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: DTMOSIV

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 15.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 190mOhm @ 7.9A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 790µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1350 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 130W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247

TK16N60W,S1VF FAQ

1.How can I place an order for TK16N60W,S1VF through Aetrix?

Please submit a Request for Quotation (RFQ) for TK16N60W,S1VF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK16N60W,S1VF reliable?

The price and inventory of TK16N60W,S1VF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK16N60W,S1VF is usually 5 days.

3.What payment methods are accepted for TK16N60W,S1VF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK16N60W,S1VF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK16N60W,S1VF?

TK16N60W,S1VF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK16N60W,S1VF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK16N60W,S1VF?

For technical support, including TK16N60W,S1VF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK16N60W,S1VF requirements.

6.How does Aetrix verify that TK16N60W,S1VF is sourced from the original manufacturer or authorized distributors?

All TK16N60W,S1VF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK16N60W,S1VF meets industry standards.

7.What is the process for return or replacement of TK16N60W,S1VF?

All TK16N60W,S1VF units undergo pre-shipment inspection (PSI). If there is an issue with TK16N60W,S1VF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK16N60W,S1VF part is unused and in its original packaging.

Return procedure for TK16N60W,S1VF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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