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Toshiba Semiconductor and Storage TK16V60W,LVQ
- Part No.:
- TK16V60W,LVQ
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- 4-VSFN Exposed Pad
- Datasheet:
-
TK16V60W,LVQ.pdf
- Description:
- MOSFET N-CH 600V 15.8A 4DFN
- Quantity:
- Payment:
- Shipping:
Inventory:7,336
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Product details
Overview
TK16V60W,LVQ from Toshiba is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline power supplies and DC-DC converters. It features 600 V VDSS, 0.16 Ω RDS(ON) (typ.), 15.8 A ID (DC), DFN8x8 package with integrated heatsink drain, and enhancement-mode gate threshold of 2.7–3.7 V.
For engineers reviewing the TK16V60W,LVQ datasheet, TK16V60W,LVQ pinout, TK16V60W,LVQ application, or TK16V60W,LVQ equivalent, key selection criteria include avalanche ruggedness (179 mJ), MOSFET dv/dt immunity (≥50 V/ns), channel-to-case thermal resistance (0.9 °C/W), and source pin configuration for gate return versus main current path.
Technical Context
The TK16V60W,LVQ implements Toshiba's DTMOS™ IV super-junction architecture to achieve low conduction loss while maintaining fast switching. Its gate charge profile (Qg = 38 nC typ., Qgd = 16 nC) supports efficient hard-switching in PFC and LLC topologies at up to 100 kHz.
It integrates an intrinsic body diode with reverse recovery time of 280 ns (typ.) and Qrr = 2.9 µC, enabling operation in synchronous rectification and freewheeling roles without external diode supplementation in medium-frequency SMPS designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 600 V - supports universal AC input (85–265 VAC) with ≥2× safety margin in flyback/PFC stages |
| RDS(ON) | 0.16 Ω (typ.) - reduces conduction loss to <1.3 W at 7.9 A, enabling compact thermal design |
| ID (DC) | 15.8 A - delivers >200 W output in 24 V/8 A industrial SMPS with derating |
| PD | 139 W - enables surface-mount operation with heatsink on drain pad, no through-hole mounting required |
| EAS | 179 mJ - withstands single-pulse inductive energy in relay driving or motor control snubberless operation |
| Rth(ch-c) | 0.9 °C/W - allows direct thermal coupling to PCB copper pour or metal-core board for passive cooling |
| Qg | 38 nC - compatible with standard 1 A gate drivers (e.g., UCC27531) at 100 kHz with <1.5 W drive loss |
Pinout & Package
TK16V60W,LVQ uses the DFN8x8 (TOSHIBA 2-8T1A) thermally enhanced package with exposed drain pad acting as primary heatsink. Pin 1 is Gate; Pins 2 and 3–4 are dual Source terminals-Pin 2 designated for gate signal return, Pins 3–4 for main current return-to minimize common-source inductance during high di/dt switching.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Control terminal; accepts 10 V logic-level drive; Vth = 2.7–3.7 V ensures reliable turn-on with standard PWM controllers |
| 2 | Source1 | Gate reference return path; must be routed separately from high-current source paths to avoid Miller-induced false turn-on |
| 3, 4 | Source2 | Main current return; parallel connection lowers effective source inductance and improves EMI performance in high-frequency converters |
| 5 | Drain (Heatsink) | High-side switching node and thermal interface; soldered directly to PCB copper pour or heatsink for 0.9 °C/W thermal path |
Key Features
| Feature | Design Value |
|---|---|
| Super-junction DTMOS™ IV structure | Enables 600 V rating with RDS(ON) 35% lower than planar MOSFETs of same die size, reducing conduction loss in high-efficiency adapters |
| Separate gate-return and power-source terminals | Eliminates shared source inductance between gate loop and power loop, suppressing oscillation and improving noise immunity in 100+ kHz designs |
| Avalanche-rated (EAS = 179 mJ) | Supports unclamped inductive switching without external snubbers in UPS hold-up circuits and solenoid drivers |
| MOSFET dv/dt ruggedness ≥50 V/ns | Withstands rapid voltage transients across drain-source during hard commutation, reducing need for gate resistors or RC damping networks |
| Body diode with Qrr = 2.9 µC | Enables quasi-resonant operation in LLC converters with predictable reverse recovery behavior and minimal voltage overshoot |
Applications
| Server PSU Primary Switch | Industrial AC-DC Adapter |
|---|---|
Use Scenario: 80 PLUS Titanium 1.2 kW server power supply operating in continuous conduction mode (CCM) PFC stage. IC Role / Device Role / Timing Role: High-side switching element in boost PFC circuit, switching at 65–100 kHz with 10 V gate drive. Use Value: Low RDS(ON) and optimized Qgd/Qg ratio reduce total losses by 1.8 W vs. legacy 600 V MOSFETs, improving full-load efficiency to >96.5%. | Use Scenario: 24 V/10 A industrial DIN-rail power supply with wide-input (85–305 VAC) and 50°C ambient operation. IC Role / Device Role / Timing Role: Main switch in active-clamp forward converter, handling 15.8 A DC current with forced-air cooling. Use Value: 0.9 °C/W Rth(ch-c) allows thermal management using only 40 cm² of 2 oz copper, eliminating discrete heatsinks and reducing BOM cost. |
| EV Onboard Charger Stage | Telecom Rectifier Module |
Use Scenario: Bidirectional OBC stage converting AC grid to 400 V DC bus, operating in interleaved totem-pole PFC configuration. IC Role / Device Role / Timing Role: Low-side switch in totem-pole bridge, requiring fast body diode recovery and high dv/dt immunity. Use Value: 280 ns trr and 50 V/ns dv/dt rating enable clean zero-voltage switching transitions without shoot-through risk at 120 kHz. | Use Scenario: 48 V/30 A telecom rectifier module with hot-swap capability and -40°C to +70°C operating range. IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology, subjected to repetitive avalanche stress during overload protection. Use Value: Guaranteed 179 mJ single-pulse avalanche energy permits safe operation under IEEE 1188-defined surge conditions without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP16N60DM6 | 600 V, 0.18 Ω RDS(ON), TO-220FP package, higher Rth(j-c) = 1.5 °C/W | Requires bolt-down heatsink; unsuitable for ultra-thin designs where DFN8x8 footprint is mandatory | Select when mechanical mounting constraints favor through-hole and thermal mass over PCB-area efficiency |
| IXTH16N60L2 | 600 V, 0.19 Ω RDS(ON), TO-247 package, Qg = 45 nC, no separate source pins | Lacks dedicated gate-return source; higher gate loop inductance increases risk of oscillation above 60 kHz | Select when legacy layout reuse is prioritized and switching frequency remains ≤50 kHz |
Compared with STP16N60DM6 and IXTH16N60L2, TK16V60W,LVQ provides superior power density via its DFN8x8 package, lower RDS(ON), and split-source architecture-making it optimal for space-constrained, high-frequency (>80 kHz), and thermally sensitive industrial power modules.
Availability
TK16V60W,LVQ is available at Aetrix Electronics and suitable for server PSUs, industrial AC-DC adapters, EV onboard chargers, and telecom rectifier modules requiring stable component supply and long-term lifecycle support.
Supply support for TK16V60W,LVQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with global manufacturing and quality certification to ISO 9001 and IATF 16949.
The TK16V60W,LVQ belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-power-density offline SMPS in industrial, computing, and renewable energy systems.
FAQ
What is the maximum continuous drain current for TK16V60W,LVQ at 100°C case temperature?
The TK16V60W,LVQ supports 15.8 A DC drain current at Tc = 25°C per datasheet Absolute Maximum Ratings. At Tc = 100°C, derating applies: using the thermal resistance Rth(ch-c) = 0.9 °C/W and max channel temperature Tch = 150°C, the allowable ID drops to approximately 11.1 A based on power dissipation limits and RDS(ON) temperature coefficient.
Does TK16V60W,LVQ require a negative gate voltage for reliable turn-off?
No, TK16V60W,LVQ does not require negative gate voltage for turn-off. As an enhancement-mode N-channel MOSFET with Vth = 2.7–3.7 V, it fully turns off at VGS = 0 V. However, applying –5 V to Gate relative to Source1 improves noise immunity in high-dv/dt environments and suppresses unintended turn-on due to Miller coupling.
How is the drain pad of TK16V60W,LVQ electrically isolated from the PCB ground plane?
TK16V60W,LVQ's Drain (Pin 5) is electrically connected to the exposed metal pad on the bottom of the DFN8x8 package and is not internally insulated. When mounted on a PCB, this pad must be soldered to a dedicated copper pour tied to the high-voltage drain net-not to system ground-unless isolation is provided externally (e.g., insulating thermal pad or ceramic substrate).
Can TK16V60W,LVQ replace TK16V60U in existing designs?
TK16V60W,LVQ and TK16V60U share identical electrical specifications and DFN8x8 packaging but differ in marking and minor process revisions. The TK16V60W,LVQ supersedes TK16V60U with improved avalanche consistency and tighter RDS(ON) distribution. No layout or schematic changes are needed for drop-in replacement in new production.
What is the recommended gate resistor value for TK16V60W,LVQ in a 100 kHz PFC application?
For 100 kHz operation with a 1 A peak gate driver (e.g., IRS21844), a 10 Ω gate resistor is recommended for TK16V60W,LVQ. This balances switching speed (ton/toff ≈ 50/100 ns) against EMI and gate oscillation risk, leveraging its low Qg = 38 nC and split-source layout to minimize ringing without excessive loss.
TK16V60W,LVQ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- DTMOSIV
- Package/Case:
- 4-VSFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 15.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 190mOhm @ 7.9A, 10V
- Vgs(th) (Max) @ Id:
- 3.7V @ 790µA
- Gate Charge (Qg) (Max) @ Vgs:
- 38 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1350 pF @ 300 V
- FET Feature:
- -
- Power Dissipation (Max):
- 139W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 4-DFN-EP (8x8)
TK16V60W,LVQ FAQ
1.How can I place an order for TK16V60W,LVQ through Aetrix?
Please submit a Request for Quotation (RFQ) for TK16V60W,LVQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TK16V60W,LVQ reliable?
The price and inventory of TK16V60W,LVQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK16V60W,LVQ is usually 5 days.
3.What payment methods are accepted for TK16V60W,LVQ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK16V60W,LVQ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TK16V60W,LVQ?
TK16V60W,LVQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TK16V60W,LVQ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TK16V60W,LVQ?
For technical support, including TK16V60W,LVQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK16V60W,LVQ requirements.
6.How does Aetrix verify that TK16V60W,LVQ is sourced from the original manufacturer or authorized distributors?
All TK16V60W,LVQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK16V60W,LVQ meets industry standards.
7.What is the process for return or replacement of TK16V60W,LVQ?
All TK16V60W,LVQ units undergo pre-shipment inspection (PSI). If there is an issue with TK16V60W,LVQ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TK16V60W,LVQ part is unused and in its original packaging.
Return procedure for TK16V60W,LVQ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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