Toshiba Semiconductor and Storage TK17A65W5,S5X

Overview

TK17A65W5 from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline AC-DC power supplies. It delivers 650 V drain-source breakdown voltage, 17.3 A DC drain current, and low 0.19 Ω (typ.) R_DS(ON), enabling efficient operation in 65–100 W server SMPS and industrial auxiliary power units.

For engineers reviewing the TK17A65W5 datasheet, TK17A65W5 pinout, TK17A65W5 application, or TK17A65W5 equivalent, key selection criteria include its fast 110 ns (typ.) body diode reverse recovery time, 314 mJ single-pulse avalanche energy rating, and TO-220SIS package with isolated mounting for enhanced thermal and safety performance in high-reliability power conversion designs.

Technical Context

This device implements Toshiba's DTMOS™ IV super-junction architecture to achieve simultaneous low conduction loss and reduced gate charge (Q_g = 50 nC typ.). Its enhancement-mode threshold voltage of 3–4.5 V enables direct drive from standard 5 V or 3.3 V controllers without level-shifting.

The integrated fast-recovery body diode (t_rr = 110 ns typ., Q_rr = 0.63 µC) supports quasi-resonant and LLC topologies requiring controlled reverse recovery behavior. Thermal resistance R_th(ch-c) = 2.78 °C/W ensures stable channel temperature control under continuous 45 W power dissipation at T_c = 25 °C.

Key Specifications

Pinout & Package

TK17A65W5 is housed in a TO-220SIS (JEITA SC-67) package with internal isolation between drain and mounting tab, rated for 2000 V_RMS isolation voltage. The package provides low thermal resistance (R_th(ch-c) = 2.78 °C/W) and mechanical stability for through-hole mounting on heatsinks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP18N65M5 and IPP65R190C7, the TK17A65W5 offers optimal balance of low gate charge, robust avalanche capability, and certified isolation-making it ideal for space-constrained, thermally demanding industrial and server power supplies where layout simplicity and long-term reliability are critical.

Availability

TK17A65W5 is available at Aetrix Electronics and suitable for server auxiliary power supplies, industrial PLC power modules, LED streetlight drivers, and ATX PS3.3 main switch applications requiring stable component supply and long-lifecycle support.

Supply support for TK17A65W5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a global semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in high-reliability power electronics.

The TK17A65W5 belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-density offline AC-DC conversion in industrial, computing, and lighting applications.

FAQ

What is the maximum continuous drain current rating for TK17A65W5?

The TK17A65W5 has a DC drain current rating of 17.3 A at T_c = 25 °C. This value assumes proper heatsinking and is derated linearly above 25 °C case temperature per the specified thermal resistance of 2.78 °C/W. At T_c = 100 °C, the usable DC current drops to approximately 11.5 A to maintain channel temperature ≤150 °C. The TK17A65W5 must not exceed this limit in sustained operation.

Does TK17A65W5 require a gate resistor for safe operation?

Yes, TK17A65W5 requires an external gate resistor to control dV/dt and prevent oscillation during switching. Typical values range from 10 Ω to 25 Ω depending on drive strength and layout parasitics. The datasheet specifies RG = 10 Ω for switching time measurements and confirms dv/dt ruggedness ≥50 V/ns under those conditions. Omitting or undersizing the gate resistor risks shoot-through, EMI, and premature failure of the TK17A65W5.

Can TK17A65W5 be used in avalanche mode intentionally?

The TK17A65W5 is rated for single-pulse avalanche energy of 314 mJ (E_AS) with defined test conditions (V_DD = 90 V, I_AR = 4.4 A). While it can withstand occasional unclamped inductive switching events, Toshiba does not recommend intentional repetitive avalanche operation. Continuous avalanche stresses degrade reliability; the TK17A65W5 should be applied within SOA limits using appropriate snubbers or clamping circuits.

What is the isolation voltage rating of TK17A65W5's TO-220SIS package?

The TO-220SIS package of TK17A65W5 is rated for 2000 V_RMS isolation between the drain terminal and the mounting tab. This eliminates the need for insulating pads or shoulder washers in heatsink-mounted configurations, simplifying mechanical design and improving thermal transfer. The TK17A65W5 maintains this isolation rating under standard humidity and contamination conditions per JEDEC standards.

How does the body diode performance of TK17A65W5 compare to standard MOSFETs?

The TK17A65W5 features an optimized body diode with 110 ns typical reverse recovery time (t_rr) and 0.63 µC reverse recovery charge (Q_rr). This is significantly faster than conventional planar MOSFETs (typically >200 ns), reducing switching loss and voltage overshoot in hard-switched topologies. In practical use, this allows the TK17A65W5 to replace discrete FRED diodes in some flyback designs, lowering BOM count and cost.