Toshiba Semiconductor and Storage TK17A65W,S5X

Overview

TK17A65W from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline power supplies. It features 650 V V_DSS, 17.3 A continuous drain current, 0.17 Ω typical R_DS(ON), and TO-220SIS package with isolated mounting. It is used in AC-DC adapters and industrial switching regulators requiring efficient 650 V operation.

For engineers reviewing the TK17A65W datasheet, TK17A65W pinout, TK17A65W application, or TK17A65W equivalent, key selection criteria include avalanche energy rating (314 mJ), gate threshold voltage range (2.5–3.5 V), dv/dt ruggedness (≥50 V/ns), and thermal resistance (R_th(ch-c) = 2.78 °C/W) for reliable high-power switching design.

Technical Context

This device implements Toshiba's DTMOS™ (Double-diffused Trench MOS) super-junction architecture to achieve low conduction loss while maintaining fast switching and robust avalanche capability. Its enhancement-mode operation with V_th = 2.5–3.5 V enables direct drive from standard 3.3 V/5 V controllers without gate boosting.

The integrated body diode supports flyback and LLC resonant topologies, with reverse recovery time (t_rr) of 300 ns and Q_rr = 2.7 µC at 8.7 A - optimized for reduced switching loss and EMI in high-frequency SMPS designs.

Key Specifications

Pinout & Package

TK17A65W uses the TO-220SIS (JEITA SC-67, Toshiba 2-10U1S) package - a through-hole, isolated-source variant of TO-220 with internal creepage/clearance for reinforced insulation. The metal tab is electrically connected to the drain, and the plastic body provides 2000 V_RMS isolation between drain and source terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with STP18N65M5 and IPP65R190C7, the TK17A65W offers built-in 2000 V_RMS isolation and tighter V_th tolerance (2.5–3.5 V), reducing gate drive complexity and eliminating insulator hardware - critical for compact, safety-certified offline power designs.

Availability

TK17A65W is available at Aetrix Electronics and suitable for AC-DC adapters, industrial switching regulators, and LED driver power supplies requiring stable component supply across multi-year production cycles.

Supply support for TK17A65W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in high-reliability discrete components.

The TK17A65W belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-voltage switching power supplies operating up to 650 V with enhanced ruggedness and thermal performance.

FAQ

What is the maximum continuous drain current rating for TK17A65W?

The TK17A65W has a maximum continuous drain current (I_D) of 17.3 A at T_c = 25 °C. This rating assumes proper heatsinking to maintain channel temperature ≤150 °C. At elevated case temperatures, derating is required per the datasheet's PD–T_c curve - e.g., at T_c = 100 °C, usable I_D drops to approximately 10.5 A due to thermal limits.

Does TK17A65W have an isolated package, and what is its isolation rating?

Yes, the TK17A65W uses the TO-220SIS package, which provides reinforced electrical isolation between the drain (metal tab) and source (lead 3). Its isolation voltage rating is 2000 V_RMS, verified per safety standards, enabling direct mounting to grounded heatsinks without additional insulation - a key advantage for Class II AC-DC power supplies.

What is the typical gate threshold voltage range for TK17A65W, and how does it affect drive circuitry?

The TK17A65W has a gate threshold voltage (V_th) range of 2.5 V to 3.5 V at V_DS = 10 V and I_D = 0.9 mA. This tight range ensures predictable turn-on behavior with standard 3.3 V or 5 V PWM controllers, eliminating the need for gate voltage translation or negative bias circuits commonly required with higher-threshold MOSFETs.

Can TK17A65W be used in avalanche mode, and what is its rated single-pulse energy?

Yes, the TK17A65W is rated for single-pulse avalanche operation with E_AS = 314 mJ (T_ch = 25 °C, V_DD = 90 V, L = 28.7 mH, R_G = 25 Ω, I_AR = 4.4 A). This rating supports reliable unclamped inductive switching in PFC and flyback converters, though repetitive avalanche is not guaranteed and should be avoided in production designs.

What are the key dynamic parameters that impact switching loss in TK17A65W?

Key dynamic parameters for switching loss in TK17A65W include total gate charge Q_g = 45 nC (determines gate driver power), gate-drain charge Q_gd = 20 nC (affects Miller plateau duration), and output capacitance C_oss = 40 pF (influences turn-off loss and resonant behavior). These values - combined with its 50 V/ns dv/dt ruggedness - enable efficient operation up to 200 kHz in well-designed SMPS layouts.