Toshiba Semiconductor and Storage TK17A80W,S4X

Overview

TK17A80W from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline power supplies. It delivers 800 V drain-source breakdown voltage, 17 A DC drain current, and a typical R_DS(ON) of 0.25 Ω at V_GS = 10 V, enabling efficient operation in AC-DC adapters and industrial SMPS.

For engineers reviewing the TK17A80W datasheet, TK17A80W pinout, TK17A80W application, or TK17A80W equivalent, key selection considerations include its TO-220SIS package thermal performance (R_th(ch-c) = 2.78 °C/W), avalanche ruggedness (E_AS = 475 mJ), and gate threshold range (3.0–4.0 V) for reliable drive compatibility with standard PWM controllers.

Technical Context

This DTMOS™-structured MOSFET employs a super-junction architecture to achieve low conduction loss while maintaining high voltage blocking capability. Its enhancement-mode operation with V_th = 3.0–4.0 V ensures compatibility with 5 V and 3.3 V logic-level gate drivers without requiring level-shifting circuitry.

The device integrates an intrinsic body diode with reverse recovery time t_rr = 360 ns and Q_rr = 6 µC, supporting hard-switched topologies. Its dv/dt ruggedness exceeds 50 V/ns, enabling stable operation under fast transient conditions in PFC and LLC resonant converters.

Key Specifications

Pinout & Package

Package: TO-220SIS (JEITA SC-67, Toshiba 2-10U1S), isolated case, 1.7 g typical weight, designed for vertical mounting with heatsink interface on drain tab.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with STP16N80FI and IXTH16N80L2, the TK17A80W offers superior balance of low R_DS(ON), fast switching, and guaranteed avalanche ruggedness-making it optimal for industrial-grade 65–150 W SMPS where thermal margin and fault resilience are critical.

Availability

TK17A80W is available at Aetrix Electronics and suitable for industrial SMPS, AC-DC adapters, and LED driver power stages requiring stable component supply and long-term lifecycle support.

Supply support for TK17A80W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a global semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in high-reliability power electronics.

The TK17A80W belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in industrial and consumer offline power conversion systems.

FAQ

What is the maximum continuous drain current rating for the TK17A80W?

The TK17A80W has a DC drain current rating of 17 A at T_c = 25 °C. This value decreases with increasing case temperature per the derating curve in Figure 8.15; at T_c = 100 °C, the usable I_D drops to approximately 9.5 A. The TK17A80W must be mounted on a heatsink capable of maintaining T_c ≤ 100 °C for sustained 17 A operation.

Does the TK17A80W have built-in avalanche capability, and how is it specified?

Yes, the TK17A80W is rated for single-pulse avalanche energy E_AS = 475 mJ under defined test conditions (V_DD = 90 V, L = 74.5 mH, I_AS = 3.4 A). This specification confirms its ability to absorb inductive energy without failure during overcurrent transients, a key requirement for flyback and PFC designs where snubberless operation is desired. The TK17A80W datasheet guarantees this parameter across production lots.

What is the gate threshold voltage range for the TK17A80W, and why does it matter?

The TK17A80W has a gate threshold voltage V_th of 3.0–4.0 V (measured at V_DS = 10 V, I_D = 0.85 mA). This range ensures reliable turn-on with standard 5 V logic-level drivers while preventing accidental turn-on from noise or leakage currents. For robust operation, gate drive should exceed 10 V to fully enhance the channel and minimize R_DS(ON); the TK17A80W achieves its rated 0.25 Ω only at V_GS = 10 V.

How does the TO-220SIS package of the TK17A80W differ from standard TO-220AB?

The TO-220SIS package used by the TK17A80W features electrical isolation between the drain-connected tab and the mounting surface, rated at 2000 V_RMS. Unlike standard TO-220AB, it allows direct heatsink attachment without insulating pads or sil-pads, reducing thermal resistance and assembly complexity. The TK17A80W's R_th(ch-c) = 2.78 °C/W reflects this optimized thermal path, making it ideal for space-constrained industrial power designs.

Can the TK17A80W be used in zero-voltage switching (ZVS) topologies?

Yes, the TK17A80W supports ZVS operation due to its low output capacitance (C_oss = 42 pF typ.) and controlled body diode characteristics (t_rr = 360 ns, Q_rr = 6 µC). These parameters enable reliable resonant turn-on in LLC and phase-shifted full-bridge converters. However, ZVS behavior depends on external circuit tuning; the TK17A80W itself does not integrate ZVS control logic-it functions as a high-performance power switch within such topologies.