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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK17E65W,S1X

Name: TK17E65W,S1X
Brand: Toshiba Semiconductor and Storage
SKU: TK17E65W,S1X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK17E65W,S1X

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: TK17E65W,S1X.pdf

Description:: MOSFET N-CH 650V 17.3A TO220

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Product details

Overview

TK17E65W,S1X from Toshiba is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline power supplies. It delivers 650 V V_DSS, 17.3 A I_D (DC), R_DS(ON) = 0.17 Ω (typ.) at V_GS = 10 V, and operates up to 150 °C channel temperature - enabling compact, efficient AC-DC adapters and industrial SMPS.

For engineers reviewing the TK17E65W,S1X datasheet, TK17E65W,S1X pinout, TK17E65W,S1X application, or TK17E65W,S1X equivalent, key selection considerations include its TO-220 package thermal performance (R_th(ch-c) = 0.757 °C/W), avalanche ruggedness (E_AS = 210 mJ), and gate threshold voltage range (2.5–3.5 V) for reliable drive with standard logic-level controllers.

Technical Context

This device implements Toshiba's DTMOS™ IV super-junction architecture to achieve low conduction loss while maintaining fast switching. Its 45 nC total gate charge (Q_g) and 20 nC gate-drain charge (Q_gd) support efficient hard-switched PFC and LLC resonant stages.

The integrated body diode exhibits t_rr = 300 ns and Q_rr = 2.7 µC under specified conditions, enabling moderate-frequency operation without external snubbing in flyback and forward converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - supports universal-input (85–265 VAC) offline SMPS without derating
R_DS(ON)	0.17 Ω (typ.) - reduces conduction loss in 15–25 W continuous output designs
I_D (DC)	17.3 A - enables single-device operation in mid-power industrial PSUs
E_AS	210 mJ - withstands single-pulse inductive energy in unclamped inverter legs
Q_g	45 nC - balances switching loss and gate drive complexity for 65–130 kHz operation
R_th(ch-c)	0.757 °C/W - allows 165 W dissipation with modest heatsinking at T_c = 25 °C
V_th	2.5–3.5 V - ensures turn-on compatibility with 3.3 V/5 V microcontrollers and PWM ICs

Pinout & Package

Package: TO-220 (TOSHIBA designation 2-10X1A), through-hole, isolated heatsink tab (Drain connected to case).

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal; requires ≤±30 V drive; sensitive to ESD
2	Drain (Heatsink)	Main high-side current path; electrically connected to metal tab for thermal transfer
3	Source	Reference node for gate drive; common return for load current

Key Features

Feature	Design Value
Super-junction DTMOS™ IV structure	Enables 0.17 Ω R_DS(ON) at 650 V - 25% lower than prior-gen equivalents
Enhancement-mode threshold	V_th = 2.5–3.5 V ensures predictable turn-on with standard logic-level drivers
Avalanche-rated design	Guaranteed 210 mJ single-pulse E_AS supports robust operation in inductive switching
Low Q_gd/Q_g ratio	20/45 nC improves voltage-controlled switching stability in hard-switched topologies
Integrated body diode	t_rr = 300 ns and Q_rr = 2.7 µC reduce recovery-related losses in flyback snubberless designs

Applications

AC-DC Power Adapters	Industrial SMPS
Use Scenario: 24 V/10 A open-frame power supply for factory automation controllers. IC Role / Device Role / Timing Role: Primary-side switching transistor in quasi-resonant flyback topology. Use Value: 0.17 Ω R_DS(ON) and 165 W P_D enable >90% efficiency at full load without forced air cooling.	Use Scenario: 48 V/15 A telecom rectifier module operating at 100 kHz. IC Role / Device Role / Timing Role: Active clamp forward converter primary switch. Use Value: 210 mJ E_AS rating tolerates leakage inductance spikes during clamp reset, eliminating need for external TVS.
LED Driver Power Stages	UPS Inverter Stages
Use Scenario: Constant-current 150 W LED driver for street lighting with universal input. IC Role / Device Role / Timing Role: High-side switch in two-transistor forward configuration. Use Value: 650 V V_DSS and 150 °C T_ch rating ensure reliability across ambient temperatures from −40 °C to +70 °C.	Use Scenario: Half-bridge in 1 kVA online UPS DC-AC stage. IC Role / Device Role / Timing Role: Low-side switching element in 50/60 Hz modified sine-wave inverter. Use Value: TO-220 package with isolated heatsink tab simplifies thermal management in space-constrained chassis layouts.

AC-DC Power Adapters

Industrial SMPS

Use Scenario: 24 V/10 A open-frame power supply for factory automation controllers.

IC Role / Device Role / Timing Role: Primary-side switching transistor in quasi-resonant flyback topology.

Use Value: 0.17 Ω R_DS(ON) and 165 W P_D enable >90% efficiency at full load without forced air cooling.

Use Scenario: 48 V/15 A telecom rectifier module operating at 100 kHz.

IC Role / Device Role / Timing Role: Active clamp forward converter primary switch.

Use Value: 210 mJ E_AS rating tolerates leakage inductance spikes during clamp reset, eliminating need for external TVS.

LED Driver Power Stages

UPS Inverter Stages

Use Scenario: Constant-current 150 W LED driver for street lighting with universal input.

IC Role / Device Role / Timing Role: High-side switch in two-transistor forward configuration.

Use Value: 650 V V_DSS and 150 °C T_ch rating ensure reliability across ambient temperatures from −40 °C to +70 °C.

Use Scenario: Half-bridge in 1 kVA online UPS DC-AC stage.

IC Role / Device Role / Timing Role: Low-side switching element in 50/60 Hz modified sine-wave inverter.

Use Value: TO-220 package with isolated heatsink tab simplifies thermal management in space-constrained chassis layouts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP18N65M5	R_DS(ON) = 0.22 Ω (typ.), Q_g = 42 nC, same TO-220 package	Slightly higher conduction loss; optimized for lower gate charge in ZVS designs	Prefer when gate drive strength is limited but thermal margin permits 0.05 Ω higher R_DS(ON)
IPP65R190C7	R_DS(ON) = 0.19 Ω (typ.), Q_g = 48 nC, TO-220FP variant with insulated flange	Higher thermal resistance (R_th(ch-c) = 0.95 °C/W); requires larger heatsink	Select if electrical isolation of heatsink is mandatory and layout allows extra thermal margin

Compared with STP18N65M5 and IPP65R190C7, the TK17E65W,S1X offers the lowest R_DS(ON) in TO-220 form factor among these three, delivering superior conduction efficiency in thermally constrained 15–25 W continuous-output applications without requiring flange isolation.

Availability

TK17E65W,S1X is available at Aetrix Electronics and suitable for AC-DC power adapters, industrial SMPS, and LED driver power stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for TK17E65W,S1X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

The TK17E65W,S1X belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in industrial and commercial equipment.

FAQ

What is the maximum continuous drain current rating for TK17E65W,S1X at 100 °C case temperature?

The TK17E65W,S1X has a DC drain current rating of 17.3 A at T_c = 25 °C. At T_c = 100 °C, derating applies per the Safe Operating Area curve (Fig. 8.17). Based on the guaranteed maximum PD vs. T_c curve (Fig. 8.15), the usable I_D drops to approximately 10.5 A to maintain T_ch ≤ 150 °C. This value is confirmed by thermal calculation using R_th(ch-c) = 0.757 °C/W and P_D = I² × R_DS(ON).

Does TK17E65W,S1X have an insulated package or require additional isolation between heatsink and PCB?

The TK17E65W,S1X uses a standard TO-220 package (TOSHIBA 2-10X1A) where Pin 2 (Drain) is electrically connected to the metal heatsink tab. No internal insulation is provided - external isolation (e.g., mica washer or silicone pad) must be used if the heatsink is grounded or at a different potential than the Drain node. This is explicitly stated in the package dimensions and absolute maximum ratings sections of the official datasheet.

What is the typical reverse recovery charge (Q_rr) of the body diode in TK17E65W,S1X, and under what test conditions is it measured?

The TK17E65W,S1X body diode has a typical reverse recovery charge Q_rr of 2.7 µC. This value is measured under the condition: I_DR = 8.7 A, V_GS = 0 V, dI_DR/dt = 50 A/µs, and V_DD = 400 V - as specified in Section 6.4 of the official datasheet. It reflects performance in flyback and forward converter freewheeling paths.

Can TK17E65W,S1X be driven directly by a 3.3 V microcontroller GPIO without a gate driver?

No - the TK17E65W,S1X has a gate threshold voltage range of 2.5–3.5 V, but full enhancement requires V_GS ≥ 10 V to achieve rated R_DS(ON) = 0.17 Ω. A 3.3 V GPIO cannot provide sufficient overdrive; using it directly would result in high conduction loss and thermal runaway. A dedicated gate driver (e.g., TC4420 or similar) is required to deliver 10–15 V with adequate peak current (>1 A) for reliable switching.

Is TK17E65W,S1X compliant with RoHS and REACH regulations?

Yes - the TK17E65W,S1X is RoHS-compliant and REACH-conformant, as confirmed by Toshiba's official environmental compliance documentation (Revision 2.0.A, dated 2026-04-14). Lead-free plating and halogen-free molding compound are used. Full material declarations and test reports are available upon request from Toshiba or authorized distributors like Digi-Key and Mouser.

TK17E65W,S1X Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: DTMOSIV

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 17.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 200mOhm @ 8.7A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 900µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1800 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 165W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

TK17E65W,S1X FAQ

1.How can I place an order for TK17E65W,S1X through Aetrix?

Please submit a Request for Quotation (RFQ) for TK17E65W,S1X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK17E65W,S1X reliable?

The price and inventory of TK17E65W,S1X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK17E65W,S1X is usually 5 days.

3.What payment methods are accepted for TK17E65W,S1X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK17E65W,S1X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK17E65W,S1X?

TK17E65W,S1X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK17E65W,S1X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK17E65W,S1X?

For technical support, including TK17E65W,S1X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK17E65W,S1X requirements.

6.How does Aetrix verify that TK17E65W,S1X is sourced from the original manufacturer or authorized distributors?

All TK17E65W,S1X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK17E65W,S1X meets industry standards.

7.What is the process for return or replacement of TK17E65W,S1X?

All TK17E65W,S1X units undergo pre-shipment inspection (PSI). If there is an issue with TK17E65W,S1X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK17E65W,S1X part is unused and in its original packaging.

Return procedure for TK17E65W,S1X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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