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Toshiba Semiconductor and Storage TK17E80W,S1X
- Part No.:
- TK17E80W,S1X
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
TK17E80W,S1X.pdf
- Description:
- MOSFET N-CHANNEL 800V 17A TO220
- Quantity:
- Payment:
- Shipping:
Inventory:44
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Product details
Overview
TK17E80W from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel Super Junction MOSFET (DTMOS™) designed for high-voltage switching in offline power supplies. It delivers 800 V drain-source breakdown voltage, 17 A continuous drain current, and low 0.25 Ω (typ.) RDS(ON) at VGS = 10 V, enabling efficient operation in AC-DC adapters and industrial SMPS.
For engineers reviewing the TK17E80W datasheet, TK17E80W pinout, TK17E80W application, or TK17E80W equivalent, this device is selected for high-efficiency, high-reliability 600–800 V primary-side switching where thermal performance, avalanche ruggedness (418 mJ), and gate drive simplicity are critical design factors.
Technical Context
The TK17E80W employs Toshiba's DTMOS™ IV process with a super junction structure to achieve high voltage blocking and low conduction loss simultaneously. Its enhancement-mode threshold voltage (3.0–4.0 V) ensures compatibility with standard 10 V gate drivers and enables clean turn-on without requiring negative bias.
It features integrated body diode with 360 ns reverse recovery time and 6 µC Qrr, supporting hard-switched topologies. The device is rated for 150 °C channel temperature and exhibits robust dv/dt immunity (≥50 V/ns), making it suitable for noisy high-power environments without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 800 V - Supports universal-input offline SMPS up to 400 VAC mains with margin. |
| RDS(ON) | 0.25 Ω (typ.) at VGS = 10 V - Reduces conduction loss in 17 A continuous applications. |
| ID (DC) | 17 A at Tc = 25 °C - Enables compact heatsink design in TO-220 package. |
| EAS | 418 mJ - Withstands single-pulse avalanche energy without failure during overvoltage transients. |
| Qg | 32 nC - Optimized for fast, low-loss switching with standard gate drivers (e.g., 6.0 Ω gate resistance). |
| Rth(ch-c) | 0.694 °C/W - Allows direct mounting to heatsink for thermal management in high-power converters. |
| dv/dt immunity | ≥50 V/ns - Ensures reliable operation under fast voltage transients without spurious turn-on. |
Pinout & Package
TK17E80W is housed in a through-hole TO-220 package (TOSHIBA designation: 2-10X1A), with the drain connected internally to the metal tab for direct heatsinking. The package weighs 1.93 g and supports mounting torque of 0.6 N·m.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Control terminal; requires ≤±20 V gate-source voltage; low 12 nC Qgs1 enables fast turn-on. |
| 2 | Drain (Heatsink) | Main high-voltage power terminal; electrically connected to metal tab for thermal and electrical path to heatsink. |
| 3 | Source | Power return and reference node for gate drive; forms common source configuration with low-inductance layout. |
Key Features
| Feature | Design Value |
|---|---|
| Super Junction DTMOS™ IV structure | Enables 800 V rating with 0.25 Ω RDS(ON), reducing conduction loss by ~35% vs. planar MOSFETs at same voltage class. |
| Enhancement-mode Vth | 3.0–4.0 V range ensures reliable turn-on with 5 V or 10 V logic-level gate drivers without risk of accidental activation. |
| Low Qgd/Qg ratio | 9 nC/32 nC (28%) minimizes Miller plateau duration, improving switching speed and reducing overlap loss. |
| Integrated body diode | 360 ns trr and 6 µC Qrr support discontinuous conduction mode (DCM) flyback and LLC resonant converters. |
| Avalanche-rated | Guaranteed 418 mJ single-pulse EAS allows safe operation during inductive switching faults without external clamping. |
Applications
| Industrial SMPS | AC-DC Adapters |
|---|---|
Use Scenario: Primary-side switch in 100–300 W open-frame industrial power supplies operating from 85–264 VAC input. IC Role / Device Role / Timing Role: High-voltage power switch in flyback or forward converter topology; handles full line-referred voltage stress and load transients. Use Value: 800 V VDSS and 418 mJ EAS eliminate need for external RCD clamp in most designs, simplifying BOM and improving reliability. |
Use Scenario: Main switching transistor in compact 65 W laptop adapters with universal AC input and high efficiency targets (>90%). IC Role / Device Role / Timing Role: Primary-side MOSFET in quasi-resonant (QR) flyback controller systems; driven by variable-frequency PWM with zero-voltage switching (ZVS) assist. Use Value: Low 0.25 Ω RDS(ON) and 32 nC Qg reduce both conduction and switching losses, directly improving light-load and full-load efficiency. |
| LED Driver Power Stages | Server PSU Front-End |
Use Scenario: Switching element in constant-current LED drivers for street lighting and high-bay fixtures (200–400 W). IC Role / Device Role / Timing Role: High-side switch in buck-derived or flyback-derived constant-current regulator; operates at 50–100 kHz with high duty cycle. Use Value: 150 °C max channel temperature and 0.694 °C/W Rth(ch-c) allow sustained operation in thermally constrained outdoor enclosures without derating. |
Use Scenario: Active clamp forward or LLC primary switch in 1 kW+ server power supply units with PFC front-end. IC Role / Device Role / Timing Role: High-reliability main switch handling repetitive 600–800 V DC bus voltage and high peak currents. Use Value: ≥50 V/ns dv/dt immunity prevents false triggering during fast bus transients, eliminating need for gate resistors >10 Ω in high-noise environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP18N80M5 (STMicroelectronics) | 800 V, 18 A, RDS(ON) = 0.23 Ω (typ.), Qg = 36 nC, TO-220FP package (isolated tab) | Higher gate charge increases switching loss; isolated tab eliminates need for insulating pad but reduces thermal conductivity. | Prefer when electrical isolation between drain and heatsink is mandatory; avoid if thermal performance is prioritized over isolation. |
| IPP60R190C7 (Infineon) | 650 V, 21 A, RDS(ON) = 0.19 Ω (typ.), Qg = 37 nC, TO-220 package, CoolMOS™ C7 | Lower voltage rating limits use to 380 VDC bus systems; superior conduction loss only beneficial below 600 V. | Prefer for 400 VDC PFC output stages where lower RDS(ON) improves efficiency; not suitable for 800 V designs like universal AC input. |
Compared with STP18N80M5 and IPP60R190C7, the TK17E80W uniquely balances 800 V capability, 0.25 Ω conduction loss, and 32 nC gate charge in a standard non-isolated TO-220, making it optimal for cost-sensitive, thermally demanding 800 V primary-side switching where avalanche ruggedness is essential.
Availability
TK17E80W is available at Aetrix Electronics and suitable for industrial SMPS, AC-DC adapters, LED driver power stages, and server PSU front-end designs requiring stable component supply and long-term manufacturability.
Supply support for TK17E80W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in high-voltage MOSFET technology.
The TK17E80W belongs to Toshiba's DTMOS™ IV super junction MOSFET product line, engineered specifically for high-efficiency, high-reliability offline switching power supplies operating at 600–800 V DC bus voltages.
FAQ
What is the maximum continuous drain current rating for TK17E80W?
The TK17E80W is rated for 17 A continuous drain current (ID) at case temperature Tc = 25 °C. At higher case temperatures, current must be derated per the Safe Operating Area curve in the datasheet; for example, at Tc = 100 °C, the usable ID drops to approximately 9.5 A. This rating assumes proper heatsinking via the drain-connected metal tab.
Does TK17E80W have avalanche capability, and how is it specified?
Yes, the TK17E80W is fully avalanche-rated with a guaranteed single-pulse avalanche energy (EAS) of 418 mJ at Tch = 25 °C. This specification is measured under standardized conditions (VDD = 90 V, L = 65.6 mH, RG = 25 Ω, IAS = 3.4 A) and ensures robustness against inductive switching faults without requiring external protection circuitry in most designs.
What is the gate threshold voltage range for TK17E80W, and why does it matter?
The TK17E80W has a gate threshold voltage (Vth) range of 3.0 to 4.0 V (measured at VDS = 10 V, ID = 0.85 mA). This tight range ensures consistent turn-on behavior across production lots and temperature, allowing reliable operation with standard 5 V or 10 V gate drivers while avoiding unintended conduction near ground potential.
Can TK17E80W be used in hard-switched topologies like conventional flyback or forward converters?
Yes, the TK17E80W is explicitly characterized for hard-switched operation, with documented dynamic parameters including 24 ns rise time, 7 ns fall time, and 50 V/ns dv/dt immunity. Its low Qgd/Qg ratio and robust body diode (trr = 360 ns) make it suitable for flyback, forward, and active-clamp topologies without requiring additional snubbing or gate drive optimization beyond standard practice.
What thermal resistance values apply to TK17E80W in TO-220 package?
The TK17E80W exhibits a channel-to-case thermal resistance (Rth(ch-c)) of 0.694 °C/W maximum and a channel-to-ambient resistance (Rth(ch-a)) of 83.3 °C/W maximum (unmounted, still air). For practical thermal design, the 0.694 °C/W value governs heatsink sizing when the drain tab is mounted to an external heatsink using the specified 0.6 N·m torque.
TK17E80W,S1X Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- DTMOSIV
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 800 V
- Current - Continuous Drain (Id) @ 25°C:
- 17A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 290mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 850µA
- Gate Charge (Qg) (Max) @ Vgs:
- 32 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2050 pF @ 300 V
- FET Feature:
- -
- Power Dissipation (Max):
- 180W (Tc)
- Operating Temperature:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
TK17E80W,S1X FAQ
1.How can I place an order for TK17E80W,S1X through Aetrix?
Please submit a Request for Quotation (RFQ) for TK17E80W,S1X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TK17E80W,S1X reliable?
The price and inventory of TK17E80W,S1X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK17E80W,S1X is usually 5 days.
3.What payment methods are accepted for TK17E80W,S1X?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK17E80W,S1X transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TK17E80W,S1X?
TK17E80W,S1X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TK17E80W,S1X order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TK17E80W,S1X?
For technical support, including TK17E80W,S1X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK17E80W,S1X requirements.
6.How does Aetrix verify that TK17E80W,S1X is sourced from the original manufacturer or authorized distributors?
All TK17E80W,S1X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK17E80W,S1X meets industry standards.
7.What is the process for return or replacement of TK17E80W,S1X?
All TK17E80W,S1X units undergo pre-shipment inspection (PSI). If there is an issue with TK17E80W,S1X, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TK17E80W,S1X part is unused and in its original packaging.
Return procedure for TK17E80W,S1X:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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