Toshiba Semiconductor and Storage TK17N65W,S1F

Overview

TK17N65W from Toshiba is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline power supplies. It delivers 650 V drain-source breakdown voltage, 17.3 A DC drain current, and a typical R_DS(ON) of 0.17 Ω at V_GS = 10 V, enabling efficient operation in AC-DC adapters and industrial SMPS.

For engineers reviewing the TK17N65W datasheet, TK17N65W pinout, TK17N65W application, or TK17N65W equivalent, key selection criteria include avalanche ruggedness (E_AS = 210 mJ), gate threshold voltage range (2.5–3.5 V), thermal resistance (R_th(ch-c) = 0.757 °C/W), and TO-247 package compatibility with heatsink mounting.

Technical Context

This device implements Toshiba's DTMOS™ (Double-diffused Trench MOS) structure to achieve low conduction loss while maintaining fast switching performance. Its enhancement-mode operation with V_th = 2.5–3.5 V ensures reliable turn-on with standard 3.3 V or 5 V gate drivers.

The TK17N65W integrates an intrinsic body diode with t_rr = 300 ns and Q_rr = 2.7 µC, supporting hard-switched topologies. Its dv/dt ruggedness exceeds 50 V/ns, and it sustains single-pulse avalanche energy up to 210 mJ without degradation.

Key Specifications

Pinout & Package

TK17N65W uses the industry-standard TO-247 (JEITA SC-65, Toshiba 2-16L1A) package with isolated tab for direct heatsink mounting. The drain terminal is electrically connected to the metal tab, requiring insulation unless chassis-grounded.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP18N65M5 and IPP65R190C7, the TK17N65W provides superior avalanche ruggedness and lower conduction loss, making it optimal for hard-switched industrial SMPS where reliability under line transients is critical-without requiring PCB layout changes for TO-247 footprint compatibility.

Availability

TK17N65W is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC adapters, and telecom rectifier modules requiring stable component supply across multi-year production cycles.

Supply support for TK17N65W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power ICs, and memory solutions with emphasis on energy efficiency and industrial reliability.

The TK17N65W belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in industrial and telecom infrastructure.

FAQ

What is the maximum continuous drain current for TK17N65W at case temperature of 100 °C?

The TK17N65W supports 17.3 A DC drain current at T_c = 25 °C. At T_c = 100 °C, derating applies per the Safe Operating Area curve (Fig. 8.17); the practical continuous current is approximately 11.5 A, based on linear derating from 165 W power dissipation and R_th(ch-c) = 0.757 °C/W. Always verify thermal design with actual board layout and airflow.

Does TK17N65W have a fully rated avalanche capability, and what test conditions apply?

Yes, TK17N65W has a guaranteed single-pulse avalanche energy rating of 210 mJ. This is measured under standardized conditions: V_DD = 90 V, T_ch = 25 °C (initial), L = 19.2 mH, R_G = 25 Ω, and I_AR = 4.4 A (Note 2, Absolute Maximum Ratings). The device is qualified for repetitive avalanche only within SOA limits-not as a design target.

Can TK17N65W be driven directly by a 3.3 V microcontroller GPIO without a gate driver?

No-while the TK17N65W has a low gate threshold (2.5–3.5 V), its total gate charge is 45 nC and input capacitance is 1800 pF. A 3.3 V GPIO cannot supply sufficient peak current to charge/discharge the gate quickly, resulting in slow switching, excessive heat, and potential shoot-through. A dedicated gate driver IC is required for reliable operation of TK17N65W.

Is TK17N65W RoHS compliant, and how is compliance indicated on the package?

Yes, TK17N65W is RoHS compliant. Per Toshiba's marking note (Section 7), RoHS-compliant units are marked with an underlined lot number and carry [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] labeling. Non-RoHS versions show [[Pb]]/INCLUDES > MCV. Confirm compliance via your Toshiba sales representative or official datasheet revision history.

What is the recommended gate resistor value for TK17N65W in a 100 kHz flyback converter?

A gate resistor of 10–22 Ω is recommended for TK17N65W in 100 kHz flyback applications. This balances switching speed (t_r/t_f ≈ 15/6 ns) against EMI and gate driver stress. Lower values (<10 Ω) increase dv/dt and risk oscillation; higher values (>33 Ω) raise switching losses. Always validate with oscilloscope measurements of V_GS and V_DS waveforms on the final PCB for TK17N65W.