Toshiba Semiconductor and Storage TK17V65W,LQ

Overview

TK17V65W from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline power supplies. It features 650 V drain-source breakdown voltage, 17.3 A DC drain current, and low R_DS(ON) of 0.175 Ω (typ.) at V_GS = 10 V, enabling high-efficiency operation in AC-DC adapters and industrial SMPS.

For engineers reviewing the TK17V65W datasheet, TK17V65W pinout, TK17V65W application, or TK17V65W equivalent, key selection considerations include its DFN8x8 package thermal performance (R_th(ch-c) = 0.8 °C/W), avalanche ruggedness (E_AS = 210 mJ), and gate threshold voltage range (2.5–3.5 V) for reliable drive compatibility with standard PWM controllers.

Technical Context

This MOSFET employs Toshiba's DTMOS™ IV super-junction structure to achieve low conduction loss while maintaining fast switching characteristics. Its optimized charge profile (Q_g = 45 nC typ., Q_gd = 20 nC) supports high-frequency operation up to several hundred kHz in resonant and hard-switched topologies.

The device integrates an intrinsic body diode with reverse recovery time (t_rr) of 300 ns and peak recovery current (I_rr) of 16 A under specified conditions, making it suitable for continuous-conduction-mode PFC and LLC half-bridge stages where diode behavior impacts efficiency and EMI.

Key Specifications

Pinout & Package

TK17V65W is housed in a surface-mount DFN8x8 package (Toshiba designation: 2-8T1A), featuring exposed drain pad for enhanced thermal dissipation. The package weighs 0.175 g and requires solder reflow per JEDEC J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP17N65M2 and IXTH17N65X2, the TK17V65W delivers lower thermal resistance, tighter gate threshold control, and characterized body diode recovery-making it the preferred choice for space-constrained, high-efficiency offline SMPS where thermal management and EMI control are critical.

Availability

TK17V65W is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC adapters, and telecom rectifier modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for TK17V65W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in high-voltage MOSFET technology.

The TK17V65W belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-power-density offline switching applications including datacenter PSUs and industrial power conversion.

FAQ

What is the maximum continuous drain current rating for TK17V65W?

The TK17V65W is rated for 17.3 A DC drain current at case temperature (T_c) of 25 °C. At higher case temperatures, current must be derated per the Safe Operating Area curve in the datasheet; for example, at T_c = 100 °C, the usable I_D drops to approximately 9.5 A. This rating assumes proper PCB thermal design with ≥200 mm² of 2 oz copper connected to the drain pad.

Does TK17V65W support gate drive from a 5 V microcontroller?

The TK17V65W has a gate threshold voltage (V_th) range of 2.5–3.5 V, so it will turn on with a 5 V gate drive. However, for low R_DS(ON) and minimal conduction loss, the datasheet specifies R_DS(ON) = 0.175 Ω at V_GS = 10 V. Driving TK17V65W at only 5 V results in significantly higher on-resistance (~0.45 Ω typ.), increasing power loss. A dedicated gate driver or level shifter is recommended for optimal performance.

How is the drain pad of TK17V65W thermally connected in layout?

The drain terminal (Pin 5) of TK17V65W is an exposed metal pad on the bottom of the DFN8x8 package and serves as both electrical connection and primary thermal path. In PCB layout, it must be connected to a large copper pour (minimum 200 mm², 2 oz thickness) with ≥8 thermal vias (0.3 mm diameter) to inner ground or thermal planes. This achieves the specified R_th(ch-c) = 0.8 °C/W and prevents channel temperature exceedance beyond 150 °C.

Is TK17V65W suitable for use in PFC boost circuits?

Yes, TK17V65W is well-suited for continuous-conduction-mode (CCM) PFC boost stages due to its 650 V V_DSS, low R_DS(ON), and characterized body diode with t_rr = 300 ns and Q_rr = 2.7 µC. These parameters enable efficient operation at typical PFC switching frequencies (65–150 kHz) while minimizing reverse recovery loss and associated EMI-key advantages confirmed in Toshiba's application notes for CCM PFC designs using DTMOS™ IV devices.

What precautions are needed when handling TK17V65W?

The TK17V65W is sensitive to electrostatic discharge (ESD), as noted in the datasheet. It must be handled using standard ESD-safe practices: grounded wrist straps, conductive foam storage, ionized air workstations, and ESD-safe packaging during transport. Additionally, the gate oxide is vulnerable to overvoltage; gate-source voltage must never exceed ±30 V, and gate drive traces should be short and shielded from noisy nodes to prevent unintended turn-on or latch-up.