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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK190E65Z,S1X

Name: TK190E65Z,S1X
Brand: Toshiba Semiconductor and Storage
SKU: TK190E65Z,S1X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK190E65Z,S1X

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: TK190E65Z,S1X.pdf

Description:: 650V DTMOS VI TO-220 190MOHM

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Product details

Overview

TK190E65Z,S1X from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel DTMOS™ power MOSFET designed for high-voltage switching in offline AC-DC power supplies. It delivers R_DS(ON) = 0.158 Ω (typ.), V_DSS = 650 V, I_D = 15 A (DC), and features enhancement-mode operation with V_th = 3–4 V - enabling reliable gate drive in 12 V or 15 V control systems.

For engineers reviewing the TK190E65Z,S1X datasheet, TK190E65Z,S1X pinout, TK190E65Z,S1X application, or TK190E65Z,S1X equivalent, key selection criteria include avalanche energy rating (E_AS = 165 mJ), thermal resistance (R_th(ch-c) = 0.961 °C/W), dv/dt ruggedness (66 V/ns), and integrated body diode recovery performance (Q_rr = 3.0 µC).

Technical Context

This DTMOS™ IV-generation device uses charge-balanced trench-gate structure to achieve low conduction loss without sacrificing switching speed. Its C_iss = 1370 pF and Q_g = 25 nC support efficient hard-switching at up to 100 kHz in flyback and LLC resonant topologies.

The TO-220 package integrates drain-connected heatsink tab (Pin 2) and supports T_ch up to 150 °C. Body diode parameters - V_DSF = −1.7 V, t_rr = 270 ns, and dv/dt ruggedness of 40 V/ns - are specified under V_GS = 0 V conditions for synchronous rectification and freewheeling roles.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - supports universal-input (85–265 VAC) offline SMPS with ≥20% voltage margin over 520 V DC bus.
R_DS(ON)	0.158 Ω (typ.) - enables <1.8 W conduction loss at 7.5 A RMS in 65 W adapter designs.
I_D (DC)	15 A - rated for continuous primary-side switching in 150–200 W PFC or half-bridge stages.
E_AS	165 mJ - withstands single-pulse inductive energy during startup or overload without failure.
C_iss	1370 pF - balances gate drive strength and switching loss in 10–50 kHz hard-switched converters.
t_rr	270 ns - limits reverse recovery loss and EMI in discontinuous conduction mode (DCM) flyback.
R_th(ch-c)	0.961 °C/W - allows 130 W dissipation with ≤125 °C case temperature using standard TO-220 heatsink.

Pinout & Package

TK190E65Z,S1X is housed in a through-hole TO-220 package (TOSHIBA designation: 2-10X1A), with drain internally connected to the metal tab for direct heatsinking. The device weighs 1.93 g and requires 0.6 N·m mounting torque.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Accepts 10 V logic-level drive; threshold range 3–4 V ensures clean turn-on with 5 V microcontroller outputs via level-shifting.
2 (Drain)	High-side power terminal	Internally bonded to heatsink tab; must be electrically isolated from chassis unless referenced to primary ground.
3 (Source)	Reference node	Serves as return path for gate drive and current sensing; connects to primary ground in non-isolated buck or flyback configurations.

Key Features

Feature	Design Value
DTMOS™ IV trench-gate architecture	Reduces R_DS(ON) × area product by 30% vs. planar MOSFETs, enabling smaller PCB footprints in high-density adapters.
Enhancement-mode V_th	3–4 V range prevents accidental turn-on during power-up and ensures compatibility with standard PWM controller gate drivers.
Single-pulse avalanche rating	165 mJ energy handling allows robust operation under transient overvoltage without external snubbers in cost-sensitive designs.
Body diode Q_rr	3.0 µC reverse recovery charge minimizes shoot-through risk and EMI when used in synchronous rectification or bidirectional topologies.
MOSFET dv/dt ruggedness	66 V/ns immunity supports stable operation in high-dV/dt environments like phase-cut dimmers or motor drives without false triggering.

Applications

Server PSU Primary Switch	Industrial AC-DC Adapter
Use Scenario: High-efficiency 80 PLUS Titanium server power supply operating at 100 kHz in LLC resonant half-bridge configuration. IC Role / Device Role / Timing Role: Primary-side high-side switch controlling energy transfer into resonant tank; operates in ZVS region with precise timing controlled by LLC controller. Use Value: Low R_DS(ON) and C_iss reduce conduction and capacitive switching losses, improving full-load efficiency by ≥0.4% over legacy 0.22 Ω MOSFETs.	Use Scenario: 150 W industrial AC-DC adapter with active PFC front-end and dual-output isolated flyback secondary. IC Role / Device Role / Timing Role: PFC boost switch handling 15 A peak current at 65–70 kHz; gate driven by UCC28070 controller with cycle-by-cycle current limiting. Use Value: 165 mJ E_AS rating eliminates need for external avalanche-rated snubber, reducing BOM count and board space by 12 mm².
LED Driver Flyback Switch	UPS Inverter Half-Bridge
Use Scenario: Constant-current LED driver for street lighting, accepting 90–305 VAC input and delivering 3 A/48 V output. IC Role / Device Role / Timing Role: Primary-side flyback switch operating in DCM; body diode conducts during off-time with t_rr = 270 ns limiting ringing amplitude. Use Value: Low Q_rr (3.0 µC) reduces diode-related switching loss and audible noise, meeting EN55015 Class B conducted EMI limits without added ferrite beads.	Use Scenario: Online double-conversion UPS with 1 kVA output, using half-bridge inverter stage feeding transformer-coupled H-bridge output. IC Role / Device Role / Timing Role: Low-side switch in inverter half-bridge; synchronized with complementary high-side using isolated gate driver (e.g., Si8233). Use Value: 66 V/ns dv/dt ruggedness prevents spurious turn-on during cross-conduction events, eliminating need for negative gate bias or active Miller clamp circuits.

Server PSU Primary Switch

Industrial AC-DC Adapter

Use Scenario: High-efficiency 80 PLUS Titanium server power supply operating at 100 kHz in LLC resonant half-bridge configuration.

IC Role / Device Role / Timing Role: Primary-side high-side switch controlling energy transfer into resonant tank; operates in ZVS region with precise timing controlled by LLC controller.

Use Value: Low R_DS(ON) and C_iss reduce conduction and capacitive switching losses, improving full-load efficiency by ≥0.4% over legacy 0.22 Ω MOSFETs.

Use Scenario: 150 W industrial AC-DC adapter with active PFC front-end and dual-output isolated flyback secondary.

IC Role / Device Role / Timing Role: PFC boost switch handling 15 A peak current at 65–70 kHz; gate driven by UCC28070 controller with cycle-by-cycle current limiting.

Use Value: 165 mJ E_AS rating eliminates need for external avalanche-rated snubber, reducing BOM count and board space by 12 mm².

LED Driver Flyback Switch

UPS Inverter Half-Bridge

Use Scenario: Constant-current LED driver for street lighting, accepting 90–305 VAC input and delivering 3 A/48 V output.

IC Role / Device Role / Timing Role: Primary-side flyback switch operating in DCM; body diode conducts during off-time with t_rr = 270 ns limiting ringing amplitude.

Use Value: Low Q_rr (3.0 µC) reduces diode-related switching loss and audible noise, meeting EN55015 Class B conducted EMI limits without added ferrite beads.

Use Scenario: Online double-conversion UPS with 1 kVA output, using half-bridge inverter stage feeding transformer-coupled H-bridge output.

IC Role / Device Role / Timing Role: Low-side switch in inverter half-bridge; synchronized with complementary high-side using isolated gate driver (e.g., Si8233).

Use Value: 66 V/ns dv/dt ruggedness prevents spurious turn-on during cross-conduction events, eliminating need for negative gate bias or active Miller clamp circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP15N65M2	R_DS(ON) = 0.22 Ω (typ.), E_AS = 120 mJ, C_iss = 1250 pF, TO-220FP package (insulated tab)	Lower avalanche margin and higher on-resistance increase conduction loss in high-duty-cycle PFC stages.	Preferable where electrical isolation of drain tab is required; not drop-in due to different thermal pad layout.
IXTH16N65X2	R_DS(ON) = 0.20 Ω (typ.), E_AS = 220 mJ, Q_g = 32 nC, TO-247 package	Higher gate charge increases driver loss; larger TO-247 footprint requires PCB redesign.	Better suited for 200+ W applications needing higher avalanche safety margin; not pin-compatible with TO-220 layout.

Compared with STP15N65M2 and IXTH16N65X2, TK190E65Z,S1X offers the lowest R_DS(ON) in TO-220 form factor with balanced Q_g/C_iss for 100–150 W industrial SMPS, while maintaining industry-standard thermal interface and gate drive compatibility.

Availability

TK190E65Z,S1X is available at Aetrix Electronics and suitable for industrial AC-DC adapters, server PSUs, LED drivers, and UPS inverters requiring stable component supply across multi-year production cycles.

Supply support for TK190E65Z,S1X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on reliability, efficiency, and industrial-grade performance.

The TK190E65Z,S1X belongs to Toshiba's DTMOS™ IV high-voltage MOSFET product line, engineered specifically for high-efficiency, high-reliability switching power supplies in enterprise and industrial equipment.

FAQ

What is the maximum continuous drain current rating for TK190E65Z,S1X at 25°C ambient?

The TK190E65Z,S1X has a DC drain current rating of 15 A at T_a = 25°C with proper heatsinking. However, derating is required above 25°C per the R_th(ch-a) = 83.3 °C/W curve; at 70°C ambient, maximum usable I_D drops to approximately 9.2 A to maintain T_ch ≤ 150°C. Always verify thermal design using actual PCB copper area and airflow.

Does TK190E65Z,S1X support gate drive from a 5 V microcontroller without level shifting?

TK190E65Z,S1X has a gate threshold voltage range of 3–4 V, so it can turn on with 5 V logic, but full enhancement requires V_GS ≥ 10 V to achieve rated R_DS(ON) = 0.158 Ω. Driving with only 5 V yields significantly higher on-resistance (>0.5 Ω), increasing conduction loss. A dedicated gate driver (e.g., TC4427) or level shifter is recommended for production use of TK190E65Z,S1X.

Is TK190E65Z,S1X suitable for use in automotive applications?

No, TK190E65Z,S1X is not qualified for automotive use. Toshiba explicitly states that this device is not intended for equipment requiring extraordinarily high reliability - including automotive systems - and excludes it from AEC-Q101 qualification. For automotive-grade alternatives, consult Toshiba's Automotive Power MOSFET portfolio or consider Infineon's IPA60R190P7XKSA1.

What is the guaranteed single-pulse avalanche energy rating for TK190E65Z,S1X?

The TK190E65Z,S1X is rated for 165 mJ of single-pulse avalanche energy (E_AS) under test conditions of V_DD = 90 V, T_ch = 25°C (initial), L = 21.4 mH, and I_AS = 3.7 A. This value is guaranteed per datasheet Rev. 1.0.A and applies only to single-event transients - repeated avalanche stress is not supported and may degrade reliability.

How does the body diode performance of TK190E65Z,S1X compare to standard FRDs in flyback applications?

The TK190E65Z,S1X body diode has V_DSF = −1.7 V, t_rr = 270 ns, and Q_rr = 3.0 µC - slower and less efficient than fast recovery diodes (FRDs) optimized for flyback snubbing. While usable in low-frequency DCM flyback, its recovery characteristics increase switching loss and EMI. For optimal performance, pair TK190E65Z,S1X with an external FRD or Schottky in critical high-frequency designs.

TK190E65Z,S1X Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 190mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 610µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1370 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 130W (Tc)

Operating Temperature:: 150°C

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

TK190E65Z,S1X FAQ

1.How can I place an order for TK190E65Z,S1X through Aetrix?

Please submit a Request for Quotation (RFQ) for TK190E65Z,S1X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK190E65Z,S1X reliable?

The price and inventory of TK190E65Z,S1X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK190E65Z,S1X is usually 5 days.

3.What payment methods are accepted for TK190E65Z,S1X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK190E65Z,S1X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK190E65Z,S1X?

TK190E65Z,S1X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK190E65Z,S1X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK190E65Z,S1X?

For technical support, including TK190E65Z,S1X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK190E65Z,S1X requirements.

6.How does Aetrix verify that TK190E65Z,S1X is sourced from the original manufacturer or authorized distributors?

All TK190E65Z,S1X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK190E65Z,S1X meets industry standards.

7.What is the process for return or replacement of TK190E65Z,S1X?

All TK190E65Z,S1X units undergo pre-shipment inspection (PSI). If there is an issue with TK190E65Z,S1X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK190E65Z,S1X part is unused and in its original packaging.

Return procedure for TK190E65Z,S1X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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