Toshiba Semiconductor and Storage TK19A50W,S5X

Overview

TK19A50W from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET using DTMOS™ Super Junction technology, designed for high-voltage switching in offline AC-DC converters and industrial SMPS. It delivers 500 V V_DSS, 18.5 A continuous drain current, 0.16 Ω typical R_DS(ON), and operates up to 150 °C channel temperature.

For engineers reviewing the TK19A50W datasheet, TK19A50W pinout, TK19A50W application, or TK19A50W equivalent, key selection criteria include its avalanche energy rating (277 mJ), gate threshold voltage range (2.7–3.7 V), TO-220SIS package thermal resistance (3.13 °C/W ch-to-case), and diode reverse recovery performance (280 ns trr at 7.9 A).

Technical Context

The TK19A50W employs Toshiba's DTMOS™ IV process with optimized charge balance for low conduction loss and fast switching. Its enhancement-mode operation requires positive gate drive only, and the integrated body diode supports synchronous rectification and flyback snubberless topologies.

Designed for hard-switched 500 V applications, it features guaranteed single-pulse avalanche capability (E_AS = 277 mJ) and high dv/dt ruggedness (≥50 V/ns), enabling robust operation in discontinuous conduction mode (DCM) and quasi-resonant (QR) flyback converters without external clamping.

Key Specifications

Pinout & Package

TO-220SIS (JEITA SC-67, Toshiba 2-10U1S) - isolated tab package with creepage/clearance optimized for reinforced insulation in Class II AC-DC designs. Tab is electrically connected to Drain.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP19NM50 and IPP60R190C7, the TK19A50W uniquely combines guaranteed avalanche ruggedness, reinforced isolation, and DTMOS™-optimized R_DS(ON)/Q_g trade-off - making it the preferred choice for industrial-grade AC-DC power supplies requiring long-term reliability under surge conditions.

Availability

TK19A50W is available at Aetrix Electronics and suitable for AC-DC power adapters, industrial SMPS, and motor drive inverters requiring stable component supply, long-lifecycle support, and RoHS-compliant sourcing.

Supply support for TK19A50W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with over 50 years of expertise in discrete power semiconductors.

The TK19A50W belongs to Toshiba's DTMOS™ IV high-voltage MOSFET product line, engineered specifically for high-efficiency, high-reliability offline switching power supplies targeting industrial, medical, and telecom applications.

FAQ

What is the maximum continuous drain current rating for TK19A50W at T_c = 25 °C?

The TK19A50W has an absolute maximum continuous drain current (I_D) rating of 18.5 A at case temperature T_c = 25 °C. Derating is required above this temperature - for example, at T_c = 80 °C, the usable I_D drops to approximately 11.5 A based on its 3.13 °C/W channel-to-case thermal resistance and 150 °C maximum channel temperature limit. Always verify thermal design margins using actual board layout and heatsink performance before finalizing the TK19A50W implementation.

Does TK19A50W have a built-in body diode, and what are its key recovery characteristics?

Yes, the TK19A50W includes an integrated N-channel body diode. Its reverse recovery time (t_rr) is 280 ns at I_DR = 7.9 A and dI_DR/dt = 100 A/µs, with reverse recovery charge (Q_rr) of 2.9 µC. These values are measured under standardized test conditions and enable predictable behavior in flyback snubberless designs and synchronous rectification schemes. The TK19A50W body diode performance is fully characterized in Section 6.4 of its official datasheet.

What is the gate threshold voltage range for TK19A50W, and how does it affect drive circuit design?

The TK19A50W has a gate threshold voltage (V_th) range of 2.7 V to 3.7 V at V_DS = 10 V and I_D = 0.79 mA. This enhancement-mode specification ensures reliable turn-on with standard 5 V or 10 V gate drivers while avoiding accidental conduction from noise. For robust operation, gate drive should exceed 10 V to achieve full R_DS(ON) performance; the TK19A50W is not optimized for 3.3 V logic-level drive without external level shifting.

Can TK19A50W be used in avalanche mode, and what is its rated single-pulse energy?

Yes, the TK19A50W is fully specified for single-pulse avalanche operation with a guaranteed rating of 277 mJ at T_ch = 25 °C. This energy is measured under defined conditions (V_DD = 90 V, L = 29.5 mH, R_G = 25 Ω, I_AR = 4.0 A). While the TK19A50W can withstand such events, repeated avalanche operation is not recommended for long-term reliability - proper snubber design or clamping remains essential in high-inductance switching circuits.

What is the isolation voltage rating of TK19A50W, and which safety standards does it support?

The TK19A50W provides 2000 V_RMS isolation voltage between the drain-connected tab and source/ground terminals, verified per JEDEC and IEC test methods. This rating supports compliance with reinforced insulation requirements in IEC/UL 62368-1 and EN 60335-1 for Class II AC-DC power supplies. When mounted with appropriate insulating hardware and PCB creepage/clearance, the TK19A50W enables safe primary-secondary barrier implementation without additional isolation components.