Toshiba Semiconductor and Storage TK1K0A60F,S4X

Overview

TK1K0A60F,S4X from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in the π-MOSⅣ family, designed for high-voltage switching in offline AC-DC converters and DC-DC power supplies. It delivers 600 V V_DSS, 7.5 A continuous drain current, 0.83 Ω typical R_DS(ON), and operates with gate threshold voltage of 2–4 V at 0.77 mA - enabling robust control with standard 10 V gate drive in industrial SMPS designs.

For engineers reviewing the TK1K0A60F,S4X datasheet, TK1K0A60F,S4X pinout, TK1K0A60F,S4X application, or TK1K0A60F,S4X equivalent, key selection criteria include avalanche ruggedness (161 mJ), MOSFET dv/dt immunity (15 V/ns), TO-220SIS package thermal resistance (3.12 °C/W channel-to-case), and integrated body diode recovery characteristics (700 ns t_rr, 4.2 µC Q_rr) critical for hard-switched flyback and PFC stages.

Technical Context

This device implements a planar vertical DMOS structure optimized for high-voltage, medium-current operation with low conduction loss and controlled switching behavior. Its gate charge profile (Q_g = 24 nC, Q_gd = 10 nC) supports efficient 65–100 kHz switching in quasi-resonant and fixed-frequency topologies while maintaining safe SOA under repetitive avalanche stress.

The integrated body diode exhibits defined reverse recovery performance (I_rr = 12 A peak, dv/dt ruggedness ≥5 V/ns), making it suitable for applications requiring self-commutated freewheeling without external Schottky supplementation. Thermal design leverages the TO-220SIS package's isolated source terminal and low R_th(ch-c) to sustain 40 W dissipation at T_c = 25 °C.

Key Specifications

Pinout & Package

TK1K0A60F,S4X is housed in a TO-220SIS (JEITA SC-67, Toshiba 2-10U1S) package featuring electrically isolated source terminal and screw-mount capability. The package provides 3.12 °C/W channel-to-case thermal resistance and 2000 V_RMS isolation between drain and mounting surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with STP7NK60ZFP and IPP60R099C7, TK1K0A60F,S4X offers unique combination of guaranteed avalanche ruggedness, electrically isolated TO-220SIS packaging, and balanced gate charge - making it optimal for cost-sensitive, thermally constrained offline power supplies requiring field-proven reliability without added protection components.

Availability

TK1K0A60F,S4X is available at Aetrix Electronics and suitable for AC-DC power supplies, industrial LED drivers, and offline UPS systems requiring stable component supply and long-term manufacturability.

Supply support for TK1K0A60F,S4X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in discrete power MOSFET design and manufacturing.

The π-MOSⅣ series, including TK1K0A60F,S4X, was developed for high-efficiency, high-reliability switching power supplies targeting industrial, consumer, and lighting applications where ruggedness, thermal performance, and cost-effectiveness are critical.

FAQ

What is the maximum continuous drain current rating for TK1K0A60F,S4X?

The TK1K0A60F,S4X has a maximum continuous drain current (I_D) of 7.5 A at T_c = 25 °C. This rating assumes proper heatsinking and derating per the R_th(ch-c) = 3.12 °C/W specification. At higher case temperatures, the current must be reduced linearly - for example, to ~4.5 A at T_c = 100 °C - to maintain channel temperature ≤150 °C. The TK1K0A60F,S4X datasheet specifies this limit under DC conditions with no pulse duty cycle constraints.

Does TK1K0A60F,S4X have an isolated package, and why does that matter?

Yes, TK1K0A60F,S4X uses the TO-220SIS package with electrically isolated source terminal and 2000 V_RMS isolation between drain and mounting surface. This allows direct mechanical attachment to a common heatsink without insulating pads or thermal interface materials compromising electrical isolation - simplifying thermal design and improving reliability in grounded-chassis systems like AC-DC adapters and industrial power supplies. The isolation is integral to the TK1K0A60F,S4X package construction and verified per JEITA SC-67 standards.

What is the typical gate threshold voltage range for TK1K0A60F,S4X, and how does it affect drive requirements?

The TK1K0A60F,S4X has a gate threshold voltage (V_th) range of 2–4 V at V_DS = 10 V and I_D = 0.77 mA. This enhancement-mode characteristic ensures reliable turn-off with 0 V gate bias and full enhancement at 10 V, making it compatible with standard PWM controllers and gate drivers. The TK1K0A60F,S4X does not require negative gate bias for robust off-state operation, reducing driver complexity compared to high-voltage MOSFETs with higher V_th spread.

Can TK1K0A60F,S4X be used in avalanche mode, and what is its rated energy?

Yes, TK1K0A60F,S4X is rated for single-pulse avalanche operation with E_AS = 161 mJ at T_ch = 25 °C, tested under standardized conditions (V_DD = 90 V, L = 5.03 mH, I_AS = 7.5 A). This rating enables use in circuits subject to inductive switching stress - such as flyback transformer leakage spikes or relay coil suppression - without external clamping. The TK1K0A60F,S4X datasheet guarantees this parameter and defines test methodology in Section 4 (Absolute Maximum Ratings).

What is the reverse recovery time and charge of the body diode in TK1K0A60F,S4X?

The body diode of TK1K0A60F,S4X has a typical reverse recovery time (t_rr) of 700 ns and reverse recovery charge (Q_rr) of 4.2 µC when tested at I_DR = 7.5 A, V_GS = 0 V, and -dI_DR/dt = 100 A/µs. These values are specified in Section 6.4 of the TK1K0A60F,S4X datasheet and directly impact switching loss and EMI in topologies relying on body diode conduction, such as DCM flyback or asymmetrical half-bridge converters.