Toshiba Semiconductor and Storage TK1K2A60F,S4X

Overview

TK1K2A60F,S4X from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in the π-MOSⅣ family, designed for high-voltage switching in offline SMPS primary-side circuits. It delivers 6 A DC drain current, 600 V drain-source breakdown voltage, and low 1 Ω (typ.) R_DS(ON) at V_GS = 10 V, enabling efficient operation in 65–100 W AC/DC adapters and industrial auxiliary power supplies.

For engineers reviewing the TK1K2A60F,S4X datasheet, TK1K2A60F,S4X pinout, TK1K2A60F,S4X application, or TK1K2A60F,S4X equivalent, key selection criteria include avalanche energy rating (134 mJ), gate threshold voltage range (2–4 V), TO-220SIS package thermal resistance (3.57 °C/W channel-to-case), and diode reverse recovery performance (600 ns trr, 3.3 µC Qrr) in flyback snubberless designs.

Technical Context

This MOSFET employs a planar vertical structure with optimized charge balance for rugged 600 V operation. Its enhancement-mode gate enables direct drive from standard PWM controllers without level-shifting, and its integrated body diode supports discontinuous conduction mode (DCM) flyback topologies with controlled reverse recovery.

The device features guaranteed single-pulse avalanche capability (E_AS = 134 mJ at T_ch = 25 °C), specified under V_DD = 90 V, L = 6.55 mH, I_AS = 6 A conditions. Thermal design is anchored by R_th(ch-c) = 3.57 °C/W and maximum channel temperature of 150 °C, requiring heatsink mounting per TO-220SIS mechanical specifications.

Key Specifications

Pinout & Package

TK1K2A60F,S4X is housed in a TO-220SIS (JEITA SC-67, Toshiba 2-10U1S) package with insulated tab, enabling direct mounting to heatsinks without isolation hardware. The package weighs 1.7 g and features screw-mount compatibility (0.6 N·m max torque).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP6NK60ZFP and FQP6N60C, TK1K2A60F,S4X offers superior thermal interface via insulated TO-220SIS, verified 134 mJ avalanche capability, and 0.2–0.4 Ω lower R_DS(ON), directly translating to reduced heatsink size and improved surge survivability in cost-sensitive industrial power supplies.

Availability

TK1K2A60F,S4X is available at Aetrix Electronics and suitable for AC/DC adapters, industrial auxiliary power units, and LED driver power stages requiring stable component supply and long-term manufacturability.

Supply support for TK1K2A60F,S4X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power ICs, and storage solutions with emphasis on reliability, efficiency, and industrial-grade robustness.

The TK1K2A60F,S4X belongs to Toshiba's π-MOSⅣ high-voltage MOSFET product line, engineered specifically for energy-efficient, compact, and thermally resilient offline switching power supplies in consumer, industrial, and lighting applications.

FAQ

What is the maximum continuous drain current rating for TK1K2A60F,S4X at 100°C case temperature?

The TK1K2A60F,S4X has a DC drain current rating of 6 A at T_c = 25 °C. At 100 °C case temperature, derating applies per the Safe Operating Area curve (Fig. 8.17); the practical continuous current drops to approximately 3.2 A to maintain T_ch ≤ 150 °C with R_th(ch-c) = 3.57 °C/W. Always verify thermal design using the guaranteed PD vs. T_c curve (Fig. 8.15) for your specific heatsink.

Does TK1K2A60F,S4X have a fully rated avalanche capability, and how is it tested?

Yes, TK1K2A60F,S4X specifies guaranteed single-pulse avalanche energy of 134 mJ under defined test conditions: V_DD = 90 V, T_ch = 25 °C (initial), L = 6.55 mH, and I_AS = 6 A (Note 2, Absolute Maximum Ratings). This is not a typical value but a production-tested minimum, ensuring robustness against inductive switching transients in flyback and resonant converters without external clamping.

Can TK1K2A60F,S4X be used as a direct replacement for older π-MOS III devices like TK1K1A60F?

No - TK1K2A60F,S4X is not a drop-in replacement for TK1K1A60F. While both share TO-220SIS packaging and 600 V rating, TK1K2A60F,S4X has lower R_DS(ON) (1 Ω vs. 1.3 Ω typ.), higher gate charge (21 nC vs. 17 nC), and improved dv/dt ruggedness (15 V/ns min). Gate drive strength and layout parasitics must be re-evaluated; refer to the TK1K2A60F,S4X-specific gate charge and switching time curves before substitution.

What is the significance of the "S4X" suffix in TK1K2A60F,S4X?

The "S4X" suffix denotes Toshiba's internal tape-and-reel packaging variant for automated SMT placement: 800 pcs per reel, embossed carrier tape (EIA-481 compliant), and RoHS-compliant lead finish. It does not indicate electrical or thermal differences from the base TK1K2A60F part - all parametric ratings, pinout, and package dimensions remain identical to the standard TO-220SIS version.

How does the body diode performance of TK1K2A60F,S4X impact quasi-resonant flyback design?

The TK1K2A60F,S4X body diode exhibits t_rr = 600 ns and Q_rr = 3.3 µC, enabling predictable zero-voltage switching (ZVS) turn-on in QR flyback controllers. This reduces switching loss and EMI versus slower diodes, allowing higher frequency operation (up to 130 kHz) while maintaining efficiency >88% at full load - confirmed in Toshiba Application Note AN-607 for π-MOSⅣ QR designs.