Toshiba Semiconductor and Storage TK1K7A60F,S4X

Overview

TK1K7A60F,S4X from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in the π-MOSⅣ family, designed for high-voltage switching in offline AC-DC power supplies. It features 600 V V_DSS, 1.41 Ω (typ.) R_DS(ON) at V_GS = 10 V and I_D = 2 A, 4 A continuous drain current, and TO-220SIS package with isolated mounting capability.

For engineers reviewing the TK1K7A60F,S4X datasheet, TK1K7A60F,S4X pinout, TK1K7A60F,S4X application, or TK1K7A60F,S4X equivalent, this page delivers verified electrical specs, thermal performance data, gate charge characteristics, avalanche ruggedness (E_AS = 106 mJ), and real-world use context for flyback and PFC stage design.

Technical Context

This device operates in enhancement mode with V_th = 2–4 V (V_DS = 10 V, I_D = 0.46 mA), enabling reliable gate drive from standard 10 V logic or PWM controllers. Its low R_DS(ON) and optimized capacitance profile (C_iss = 560 pF, C_rss = 5 pF) support efficient hard-switching up to several hundred kHz.

The integrated body diode exhibits t_rr = 600 ns and Q_rr = 3.3 µC under specified conditions (I_DR = 4 A, -dI_DR/dt = 100 A/µs), supporting quasi-resonant and discontinuous conduction mode operation. Channel temperature is rated to 150 °C with R_th(ch-c) = 3.57 °C/W.

Key Specifications

Pinout & Package

TK1K7A60F,S4X is housed in a TO-220SIS (JEITA SC-67 / Toshiba 2-10U1S) package with internal isolation between drain and mounting tab (2000 V_RMS isolation voltage). The package weighs 1.7 g and supports mechanical mounting torque of 0.6 N·m.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 600 V power MOSFET applications.

Compared with STP4NK60ZFP and IPP60R190C6, TK1K7A60F,S4X offers balanced trade-offs: superior avalanche ruggedness over the STMicro part and lower system cost than the Infineon Superjunction device, while maintaining proven reliability in long-lifecycle industrial power supplies.

Availability

TK1K7A60F,S4X is available at Aetrix Electronics and suitable for AC-DC flyback converters, active PFC stages, and industrial control power modules requiring stable component supply and long-term manufacturability.

Supply support for TK1K7A60F,S4X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in discrete power MOSFET design and manufacturing.

The π-MOSⅣ series-including TK1K7A60F,S4X-is engineered for high-reliability, high-voltage switching in industrial and commercial power conversion, emphasizing avalanche ruggedness, thermal stability, and gate drive simplicity.

FAQ

What is the maximum continuous drain current for TK1K7A60F,S4X at 25 °C ambient?

The TK1K7A60F,S4X has a maximum continuous drain current (I_D) of 4 A at T_a = 25 °C with proper heatsinking. This rating assumes operation within absolute maximum limits and accounts for thermal resistance to ambient (R_th(ch-a) = 62.5 °C/W). At elevated temperatures or with limited airflow, derating is required per the datasheet's PD–T_c curve.

Does TK1K7A60F,S4X have an integrated body diode, and what are its key recovery characteristics?

Yes, TK1K7A60F,S4X includes a monolithic body diode. Its reverse recovery time (t_rr) is 600 ns and reverse recovery charge (Q_rr) is 3.3 µC under test conditions of I_DR = 4 A, V_GS = 0 V, and -dI_DR/dt = 100 A/µs. These values support use in discontinuous conduction mode (DCM) flyback and quasi-resonant converters.

What is the gate threshold voltage range for TK1K7A60F,S4X, and how does it affect drive circuit design?

The gate threshold voltage (V_th) for TK1K7A60F,S4X is 2–4 V at V_DS = 10 V and I_D = 0.46 mA. This range ensures reliable turn-on with standard 10 V gate drivers while avoiding unintended conduction from noise. Designers should maintain V_GS ≥ 8 V for full enhancement and low R_DS(ON).

Can TK1K7A60F,S4X be directly mounted to a heatsink without insulation?

Yes-TK1K7A60F,S4X uses the TO-220SIS package with electrically isolated drain tab, rated for 2000 V_RMS isolation. This allows direct mechanical mounting to a grounded heatsink without thermal pads or insulators, simplifying thermal design and reducing thermal resistance in industrial power supplies.

What is the single-pulse avalanche energy rating for TK1K7A60F,S4X, and under what conditions is it guaranteed?

The TK1K7A60F,S4X is rated for 106 mJ single-pulse avalanche energy (E_AS) under conditions of V_DD = 90 V, T_ch = 25 °C (initial), L = 11.7 mH, and I_AS = 4 A. This rating is guaranteed per Toshiba's qualification testing and enables robust operation during transformer leakage spikes without external protection components.