Toshiba Semiconductor and Storage TK1K9A60F,S4X

Overview

TK1K9A60F,S4X from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in the π-MOSⅣ family, designed for high-voltage switching in offline AC-DC converters and DC-DC power stages. It delivers 600 V drain-source breakdown voltage, 1.6 Ω typical R_DS(ON) at V_GS = 10 V, and 3.7 A continuous drain current, operating up to 150 °C channel temperature in TO-220SIS package.

For engineers reviewing the TK1K9A60F,S4X datasheet, TK1K9A60F,S4X pinout, TK1K9A60F,S4X application, or TK1K9A60F,S4X equivalent, key selection criteria include avalanche ruggedness (101 mJ), gate threshold voltage range (2–4 V), diode reverse recovery characteristics (600 ns t_rr, 3.0 µC Q_rr), and thermal resistance (4.16 °C/W channel-to-case).

Technical Context

This MOSFET employs a planar vertical structure optimized for fast switching and robust avalanche performance in hard-switched topologies. Its enhancement-mode operation with V_th = 2–4 V enables direct drive from standard PWM controllers without level-shifting. The integrated body diode supports freewheeling in flyback and forward converters.

Designed for unclamped inductive switching (UIS) stress, it sustains single-pulse avalanche energy of 101 mJ at T_ch = 25 °C. Dynamic parameters-including C_iss = 490 pF, C_rss = 5.2 pF, and Q_g = 14 nC-support efficient gate driving at frequencies up to several hundred kHz in SMPS designs.

Key Specifications

Pinout & Package

TK1K9A60F,S4X is housed in a TO-220SIS (JEITA SC-67 / Toshiba 2-10U1S) package with isolated drain tab, enabling direct mounting to heatsinks without insulating hardware. Weight: 1.7 g (typ.).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with STP3NK60ZFP and IXTP3N60P, TK1K9A60F,S4X offers superior conduction efficiency (1.6 Ω vs ≥2.2 Ω), guaranteed drain isolation (2000 V_RMS), and higher avalanche margin (101 mJ), making it optimal for compact, safety-certified offline power supplies where layout simplicity and reliability are prioritized.

Availability

TK1K9A60F,S4X is available at Aetrix Electronics and suitable for AC-DC adapters, industrial auxiliary supplies, and LED drivers requiring stable component supply across extended production lifecycles.

Supply support for TK1K9A60F,S4X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, efficiency, and industrial-grade performance.

The TK1K9A60F,S4X belongs to Toshiba's π-MOSⅣ high-voltage MOSFET product line, engineered specifically for energy-efficient, compact offline switching power supplies in consumer, industrial, and lighting applications.

FAQ

What is the maximum continuous drain current rating for TK1K9A60F,S4X?

The TK1K9A60F,S4X has a maximum continuous drain current (I_D) of 3.7 A at T_c = 25 °C. This rating assumes proper heatsinking and derates linearly with increasing case temperature-down to zero at 150 °C-per its thermal resistance of 4.16 °C/W (channel-to-case). Actual usable current depends on PCB layout, ambient conditions, and thermal interface materials.

Does TK1K9A60F,S4X have an isolated drain package?

Yes, TK1K9A60F,S4X uses the TO-220SIS package, which features electrical isolation between the drain terminal and the metal tab. This provides 2000 V_RMS isolation, allowing direct mounting to grounded heatsinks without insulating hardware-a key advantage over standard TO-220 variants in safety-critical AC-DC designs.

What is the typical gate charge requirement for TK1K9A60F,S4X?

The TK1K9A60F,S4X has a total gate charge (Q_g) of 14 nC (typ.) under V_DD ≈ 400 V, V_GS = 10 V, and I_D = 3.7 A conditions. This value determines gate driver strength requirements; for example, a 1-A peak driver can fully charge the gate in ~14 ns, supporting switching frequencies up to several hundred kHz with low propagation delay.

How does the body diode performance of TK1K9A60F,S4X compare to standard MOSFETs?

The TK1K9A60F,S4X body diode exhibits t_rr = 600 ns (typ.), Q_rr = 3.0 µC, and I_rr = 10 A (typ.)-significantly faster and lower-loss than many 600 V MOSFETs. This reduces switching losses and EMI in DCM flyback converters, especially during the demagnetization phase where diode conduction occurs.

Is TK1K9A60F,S4X RoHS compliant?

Yes, TK1K9A60F,S4X is RoHS compliant per EU Directive 2011/65/EU. The marking notation on the device indicates [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]], depending on the specific lot. Full environmental compliance documentation, including substance declarations, is available through Toshiba's official channels and authorized distributors.