Toshiba Semiconductor and Storage TK1R4F04PB,LXGQ

Overview

TK1R4F04PB from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in the U-MOSⅧ-H family, designed as a high-current, low-R_DS(ON) switching element for automotive and industrial DC-DC conversion. It delivers R_DS(ON) = 1.1 mΩ (typ.) at V_GS = 10 V, supports 160 A DC drain current, and features AEC-Q101 qualification for under-hood automotive use.

For engineers reviewing the TK1R4F04PB datasheet, TK1R4F04PB pinout, TK1R4F04PB application, or TK1R4F04PB equivalent, key selection criteria include its 40 V V_DSS, TO-220SM(W) package with heatsink-integrated drain, and guaranteed single-pulse avalanche energy of 377 mJ - critical for robustness in motor drive and synchronous rectifier designs.

Technical Context

This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate process to achieve ultra-low on-resistance while maintaining fast switching performance. Its gate threshold voltage range (2.0–3.0 V) enables reliable enhancement-mode operation with standard 10 V gate drivers, and its low Q_gd (24 nC typ.) minimizes Miller-induced turn-off delay in high-frequency converters.

Thermally, it features a channel-to-case thermal resistance of 0.73 °C/W and a maximum channel temperature rating of 175 °C, enabling high-power operation when mounted on an adequately sized heatsink. The device integrates a robust body diode with t_rr = 100 ns (typ.) and Q_rr = 100 nC (typ.), supporting synchronous rectification and freewheeling in hard-switched topologies.

Key Specifications

Pinout & Package

TK1R4F04PB is housed in a TO-220SM(W) package (Toshiba designation: 2-10W1S), featuring an isolated gate lead, electrically connected drain tab (heatsink surface), and source terminal - optimized for high-current PCB mounting with thermal relief.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STL220N4F7AG and IRFB4115PBF, TK1R4F04PB uniquely balances AEC-Q101 compliance, 1.1 mΩ on-resistance, and TO-220SM(W) thermal performance - making it the optimal choice for automotive 48 V systems where qualification, efficiency, and thermal management are jointly critical.

Availability

TK1R4F04PB is available at Aetrix Electronics and suitable for automotive power conversion, industrial DC-DC converters, and motor drive inverters requiring stable component supply across extended production lifecycles.

Supply support for TK1R4F04PB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on automotive, industrial, and consumer reliability.

The TK1R4F04PB belongs to Toshiba's U-MOSⅧ-H power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in automotive 48 V systems and industrial power supplies.

FAQ

What is the maximum continuous drain current rating for TK1R4F04PB?

The TK1R4F04PB has a maximum continuous drain current (I_D) rating of 160 A at T_c = 25 °C. This rating assumes proper heatsinking to maintain channel temperature ≤175 °C. At elevated case temperatures, derating applies per the Safe Operating Area curve in the datasheet - for example, at T_c = 100 °C, the usable I_D drops to approximately 95 A. Always verify thermal design using R_th(ch-c) = 0.73 °C/W.

Is TK1R4F04PB qualified for automotive applications?

Yes, TK1R4F04PB is AEC-Q101 qualified, confirming its suitability for automotive electronic systems including engine control units, electric power steering, and ADAS power stages. The qualification covers stress tests for temperature cycling, humidity, HTRB, and ESD - all performed per the AEC-Q101 standard. This makes TK1R4F04PB appropriate for under-hood environments up to 150 °C ambient.

What package type does TK1R4F04PB use, and how is thermal management implemented?

TK1R4F04PB uses the TO-220SM(W) package (Toshiba designation: 2-10W1S), which features an electrically connected drain tab serving as both the high-current output and primary thermal path. The package provides 0.73 °C/W channel-to-case thermal resistance, enabling direct mounting to a heatsink. Proper insulation (e.g., mica washer + thermal grease) is required if the heatsink is grounded, since the drain is internally tied to the metal tab.

Does TK1R4F04PB include an integrated body diode, and what are its key parameters?

Yes, TK1R4F04PB includes a built-in body diode rated for 160 A DC reverse current. Key parameters include diode forward voltage V_DSF = –1.2 V (max) at I_DR = 160 A, reverse recovery time t_rr = 100 ns (typ.), and reverse recovery charge Q_rr = 100 nC (typ.). These values support efficient freewheeling and synchronous rectification without external diodes in buck or LLC topologies.

What is the gate threshold voltage range for TK1R4F04PB, and how does it affect drive requirements?

The gate threshold voltage (V_th) for TK1R4F04PB is specified as 2.0–3.0 V at V_DS = 10 V and I_D = 0.5 mA. This enhancement-mode range ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers. For full enhancement and minimal R_DS(ON), a V_GS ≥ 10 V is recommended - the device achieves 1.1 mΩ at this bias. Avoid driving near V_th in switching applications to prevent linear-mode heating.