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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK1R4S04PB,LXHQ

Name: TK1R4S04PB,LXHQ
Brand: Toshiba Semiconductor and Storage
SKU: TK1R4S04PB,LXHQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK1R4S04PB,LXHQ

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: TK1R4S04PB,LXHQ.pdf

Description:: MOSFET N-CH 40V 120A DPAK

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Product details

Overview

TK1R4S04PB from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in U-MOSⅧ-H process, designed for high-current switching in automotive and industrial DC-DC converters. It features 40 V V_DSS, 1.1 mΩ R_DS(ON) (typ. at V_GS = 10 V, I_D = 60 A), 120 A continuous drain current, AEC-Q101 qualification, and DPAK+ package with exposed drain heatsink.

For engineers reviewing the TK1R4S04PB datasheet, TK1R4S04PB pinout, TK1R4S04PB application, or TK1R4S04PB equivalent, this page delivers verified electrical specs, thermal performance data, gate charge characteristics, avalanche ruggedness (E_AS = 286 mJ), and real-world use context for motor drivers and switching regulators.

Technical Context

This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate structure to achieve ultra-low on-resistance while maintaining robust avalanche capability and fast switching. Its enhancement-mode operation (V_th = 2.0–3.0 V) ensures reliable gate drive compatibility with standard 5 V or 10 V logic-level controllers.

The device integrates an intrinsic body diode with reverse recovery time (t_rr) of 100 ns and Q_rr of 100 nC (typ.), enabling efficient synchronous rectification and hard-switched topologies. Thermal design is supported by R_th(ch-c) = 0.83 °C/W and T_ch(max) = 175 °C rating.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage for 12 V/24 V automotive and industrial bus applications
R_DS(ON)	1.1 mΩ (typ. at V_GS = 10 V, I_D = 60 A) - Enables <1 W conduction loss at 100 A, critical for high-efficiency power stages
I_D (DC)	120 A - Supports high-current motor phases and VRM output stages without parallel devices
E_AS	286 mJ - Confirmed single-pulse avalanche energy enables robustness against inductive switching transients
Q_g	103 nC (typ. at V_DD ≈ 32 V, I_D = 120 A) - Determines gate driver power requirement and switching speed trade-off
C_iss	5500 pF (typ.) - Impacts gate drive loop stability and EMI behavior in high-frequency converters
T_ch(max)	175 °C - AEC-Q101 qualified channel temperature limit for sustained automotive under-hood operation

Pinout & Package

DPAK+ (TOSHIBA package code 2-7M1A), surface-mount, thermally enhanced with exposed drain pad acting as primary heatsink. Weight: 0.36 g (typ.).

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal; requires ≤±20 V gate-source voltage; low Q_gs1 (30 nC) enables fast turn-on
2	Drain (heatsink)	Main high-side current path and thermal interface; soldered directly to PCB copper pour for thermal management
3	Source	Reference node for gate drive and current sensing; connects to low-side switch or ground return path

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis systems per stress test requirements including HTGB, HTRB, and temperature cycling
Ultra-low R_DS(ON)	1.1 mΩ typ. reduces conduction losses by >30% vs. legacy U-MOS VI devices, improving efficiency in 48 V mild-hybrid DC-DC converters
High avalanche energy rating	286 mJ single-pulse E_AS supports reliable operation in unclamped inductive switching (e.g., motor phase commutation)
Low Q_gd/Q_g ratio	24 nC / 103 nC = 0.23 - Improves Miller immunity and enables stable operation at high dV/dt rates (>50 V/ns)
Optimized body diode	t_rr = 100 ns and Q_rr = 100 nC reduce switching loss and voltage overshoot during freewheeling in synchronous buck converters

Applications

Automotive Electric Power Steering (EPS)	Industrial 48 V DC-DC Converter
Use Scenario: High-current H-bridge driving 3-phase BLDC motor in steering assist module under ambient up to 125 °C. IC Role / Device Role / Timing Role: Low-side and high-side switching element in motor phase leg; handles bidirectional 100+ A peak currents with minimal thermal rise. Use Value: AEC-Q101 qualification and 175 °C T_ch ensure reliability in sealed EPS enclosures; 1.1 mΩ R_DS(ON) limits power dissipation to <1.2 W at 100 A.	Use Scenario: Primary-side synchronous rectifier in isolated 48 V-to-12 V LLC resonant converter for server power supplies. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier MOSFET operating at 200–500 kHz with zero-voltage switching. Use Value: Low C_oss (3400 pF) and fast t_f (23 ns) minimize switching loss; 40 V rating provides sufficient margin over 12 V output rail.
Electric Vehicle On-Board Charger (OBC) PFC Stage	Industrial Motor Drive Inverter Module
Use Scenario: Boost switch in 6.6 kW two-stage OBC front-end, operating continuously at 65 °C case temperature. IC Role / Device Role / Timing Role: High-efficiency, high-reliability switching element in continuous conduction mode (CCM) boost converter. Use Value: 120 A I_D rating allows single-device implementation without paralleling; R_th(ch-c) = 0.83 °C/W enables direct heatsink mounting for thermal headroom.	Use Scenario: Half-bridge leg in 5–10 kW servo drive inverter, switching at 8–16 kHz with forced air cooling. IC Role / Device Role / Timing Role: Main power switch handling 80 A RMS motor phase current with repetitive avalanche stress during fault conditions. Use Value: 286 mJ E_AS withstands repeated short-circuit events; V_th = 2.0–3.0 V ensures clean turn-on with standard gate drivers.

Automotive Electric Power Steering (EPS)

Industrial 48 V DC-DC Converter

Use Scenario: High-current H-bridge driving 3-phase BLDC motor in steering assist module under ambient up to 125 °C.

IC Role / Device Role / Timing Role: Low-side and high-side switching element in motor phase leg; handles bidirectional 100+ A peak currents with minimal thermal rise.

Use Value: AEC-Q101 qualification and 175 °C T_ch ensure reliability in sealed EPS enclosures; 1.1 mΩ R_DS(ON) limits power dissipation to <1.2 W at 100 A.

Use Scenario: Primary-side synchronous rectifier in isolated 48 V-to-12 V LLC resonant converter for server power supplies.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier MOSFET operating at 200–500 kHz with zero-voltage switching.

Use Value: Low C_oss (3400 pF) and fast t_f (23 ns) minimize switching loss; 40 V rating provides sufficient margin over 12 V output rail.

Electric Vehicle On-Board Charger (OBC) PFC Stage

Industrial Motor Drive Inverter Module

Use Scenario: Boost switch in 6.6 kW two-stage OBC front-end, operating continuously at 65 °C case temperature.

IC Role / Device Role / Timing Role: High-efficiency, high-reliability switching element in continuous conduction mode (CCM) boost converter.

Use Value: 120 A I_D rating allows single-device implementation without paralleling; R_th(ch-c) = 0.83 °C/W enables direct heatsink mounting for thermal headroom.

Use Scenario: Half-bridge leg in 5–10 kW servo drive inverter, switching at 8–16 kHz with forced air cooling.

IC Role / Device Role / Timing Role: Main power switch handling 80 A RMS motor phase current with repetitive avalanche stress during fault conditions.

Use Value: 286 mJ E_AS withstands repeated short-circuit events; V_th = 2.0–3.0 V ensures clean turn-on with standard gate drivers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	R_DS(ON) = 0.75 mΩ (typ.), 40 V, DFN8 5×6 mm package, no AEC-Q101 qualification	Higher current density but lacks automotive qualification; unsuitable for EPS or OBC where AEC compliance is mandatory	Prefer TK1R4S04PB when AEC-Q101 validation and DPAK+ thermal robustness are required
IRF1404ZPBF	R_DS(ON) = 3.8 mΩ (typ.), 40 V, TO-220AB package, non-automotive grade	Higher conduction loss (~3.5×), larger footprint, and no avalanche rating confirmation; limited to cost-sensitive industrial use	Choose TK1R4S04PB for designs requiring <1.5 mΩ R_DS(ON), 120 A rating, and validated avalanche ruggedness

Compared with STL220N4F7AG and IRF1404ZPBF, the TK1R4S04PB uniquely combines AEC-Q101 qualification, 1.1 mΩ on-resistance, and DPAK+ thermal performance-making it the only option among the three suitable for production automotive power modules requiring both reliability and efficiency.

Availability

TK1R4S04PB is available at Aetrix Electronics and suitable for automotive electric power steering, industrial 48 V DC-DC converters, and on-board charger PFC stages requiring stable component supply and long-term lifecycle support.

Supply support for TK1R4S04PB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a global semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, headquartered in Japan with ISO/TS 16949-certified automotive production lines.

The TK1R4S04PB belongs to Toshiba's U-MOSⅧ-H automotive-qualified power MOSFET family, engineered specifically for high-efficiency, high-reliability switching in electric vehicle subsystems and industrial power conversion.

FAQ

What is the maximum continuous drain current rating for TK1R4S04PB?

The TK1R4S04PB has a maximum continuous drain current (I_D) of 120 A at T_c = 25 °C. This rating assumes proper heatsinking via the exposed drain pad (Pin 2) and is derated linearly above 25 °C case temperature per the datasheet's safe operating area curve. At T_c = 100 °C, the usable I_D drops to approximately 75 A. The TK1R4S04PB must be operated within its SOA limits to avoid thermal runaway or bond wire failure.

Is TK1R4S04PB qualified for automotive applications?

Yes, the TK1R4S04PB is fully AEC-Q101 qualified, having passed all stress tests including high-temperature gate bias (HTGB), high-temperature reverse bias (HTRB), and temperature cycling. Its 175 °C maximum channel temperature and guaranteed avalanche energy (E_AS = 286 mJ) meet stringent automotive reliability requirements for powertrain and chassis systems. The TK1R4S04PB is commonly used in EPS, OBC, and battery disconnect units.

What is the gate threshold voltage range for TK1R4S04PB?

The TK1R4S04PB exhibits a gate threshold voltage (V_th) range of 2.0 V to 3.0 V, measured at V_DS = 10 V and I_D = 0.5 mA. This enhancement-mode specification ensures predictable turn-on behavior with standard 3.3 V or 5 V microcontroller outputs and eliminates risk of unintended conduction. The TK1R4S04PB maintains stable V_th across temperature (–55 °C to 175 °C), as confirmed in Figure 8.9 of its datasheet.

Does TK1R4S04PB include an integrated body diode, and what are its key parameters?

Yes, the TK1R4S04PB integrates a fast-recovery body diode optimized for synchronous rectification. Its key parameters include reverse recovery time (t_rr) of 100 ns (typ.), reverse recovery charge (Q_rr) of 100 nC (typ.), and forward voltage (V_DSF) of –1.2 V (max) at I_DR = 120 A. These values enable low-loss freewheeling in buck and LLC converters. The TK1R4S04PB's diode performance is characterized under realistic conditions (dI_DR/dt = 50 A/µs), not idealized test setups.

What package type does TK1R4S04PB use, and how is thermal management implemented?

The TK1R4S04PB uses the DPAK+ package (Toshiba code 2-7M1A), featuring an exposed drain pad (Pin 2) that serves as the primary thermal path to the PCB. Its channel-to-case thermal resistance (R_th(ch-c)) is 0.83 °C/W, enabling efficient heat transfer when soldered to ≥2 oz copper with thermal vias. Unlike standard DPAK, DPAK+ offers improved mechanical strength and thermal performance. The TK1R4S04PB's thermal design must respect the 175 °C maximum channel temperature limit under all operating conditions.

TK1R4S04PB,LXHQ Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSIX-H

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 1.9mOhm @ 60A, 6V

Vgs(th) (Max) @ Id:: 3V @ 500µA

Gate Charge (Qg) (Max) @ Vgs:: 103 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5500 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 180W (Tc)

Operating Temperature:: 175°C

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK+

TK1R4S04PB,LXHQ FAQ

1.How can I place an order for TK1R4S04PB,LXHQ through Aetrix?

Please submit a Request for Quotation (RFQ) for TK1R4S04PB,LXHQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK1R4S04PB,LXHQ reliable?

The price and inventory of TK1R4S04PB,LXHQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK1R4S04PB,LXHQ is usually 5 days.

3.What payment methods are accepted for TK1R4S04PB,LXHQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK1R4S04PB,LXHQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK1R4S04PB,LXHQ?

TK1R4S04PB,LXHQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK1R4S04PB,LXHQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK1R4S04PB,LXHQ?

For technical support, including TK1R4S04PB,LXHQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK1R4S04PB,LXHQ requirements.

6.How does Aetrix verify that TK1R4S04PB,LXHQ is sourced from the original manufacturer or authorized distributors?

All TK1R4S04PB,LXHQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK1R4S04PB,LXHQ meets industry standards.

7.What is the process for return or replacement of TK1R4S04PB,LXHQ?

All TK1R4S04PB,LXHQ units undergo pre-shipment inspection (PSI). If there is an issue with TK1R4S04PB,LXHQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK1R4S04PB,LXHQ part is unused and in its original packaging.

Return procedure for TK1R4S04PB,LXHQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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