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Toshiba Semiconductor and Storage TK1R5R04PB,LXGQ

Name: TK1R5R04PB,LXGQ
Brand: Toshiba Semiconductor and Storage
SKU: TK1R5R04PB,LXGQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK1R5R04PB,LXGQ

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: TK1R5R04PB,LXGQ.pdf

Description:: MOSFET N-CH 40V 160A D2PAK

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Inventory:2,900

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Product details

Overview

TK1R5R04PB from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in U-MOSⅣ-H process, designed for high-current switching in automotive and industrial power stages. It delivers 1.25 mΩ R_DS(ON) at V_GS = 10 V, supports 160 A DC drain current, and features AEC-Q101 qualification for under-hood motor control and DC-DC converter applications.

For engineers reviewing the TK1R5R04PB datasheet, TK1R5R04PB pinout, TK1R5R04PB application, or TK1R5R04PB equivalent, key selection criteria include its 40 V V_DSS, low 0.73 °C/W channel-to-case thermal resistance, D2PAK+ package with exposed drain heatsink, and robust 377 mJ single-pulse avalanche energy rating.

Technical Context

This MOSFET employs Toshiba's U-MOSⅣ-H trench-gate structure to minimize conduction loss while maintaining fast switching performance. Its enhancement-mode gate threshold (2.0–3.0 V) enables direct drive from standard 3.3 V/5 V logic controllers, and integrated body diode supports synchronous rectification in buck converters.

The device operates within a channel temperature range of –55 °C to +175 °C and is rated for 100 A single-pulse avalanche current. Its dynamic characteristics-including 5500 pF input capacitance and 24 nC gate-drain charge-support optimized gate driver sizing for high-frequency (>100 kHz) switching topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage compatible with 12 V/24 V automotive battery systems and 48 V industrial rails.
R_DS(ON) (typ.)	1.25 mΩ at V_GS = 10 V - Enables <1.3 W conduction loss at 100 A, reducing heatsink requirements in high-power motor drivers.
I_D (DC)	160 A - Supports continuous high-current loads such as electric power steering (EPS) and HVAC blower motors.
E_AS	377 mJ - Withstands inductive energy spikes during fault conditions without failure, critical for automotive load-dump protection.
R_th(ch-c)	0.73 °C/W - Allows efficient thermal coupling to PCB copper or external heatsinks, enabling compact 2-layer board designs.
Q_gd	24 nC - Low Miller charge minimizes switching losses and improves immunity to dv/dt-induced turn-on in half-bridge configurations.
V_th	2.0–3.0 V - Ensures reliable turn-on with standard microcontroller GPIOs and compatibility with PWM controllers operating at 3.3 V logic levels.

Pinout & Package

TK1R5R04PB uses the D2PAK+ (TOSHIBA: 2-10W2A) surface-mount package with an exposed drain pad on the bottom for direct thermal attachment. The package weighs 0.992 g and features a standardized 3-pin configuration optimized for high-current PCB layout and thermal management.

Pin/Terminal	Circuit Role	Design Meaning
1: Gate	Control electrode	Accepts TTL/CMOS-compatible gate drive; requires <24 nC total charge for full enhancement; sensitive to ESD-must be handled with grounding precautions.
2: Drain (Heatsink)	Main current path output / thermal interface	Electrically connected to the internal die backside; must be soldered to large copper pour or heatsink for thermal dissipation and electrical return path.
3: Source	Reference node / current return	Serves as power ground reference for gate drive and current sensing; layout must minimize inductance to prevent ringing during fast switching transitions.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive under-hood environments including temperature cycling, humidity bias, and mechanical shock per JESD22 standards.
Low R_DS(ON)	1.25 mΩ typ. at 10 V drive enables >98% efficiency in 48 V/100 A DC-DC converters at 100 kHz switching frequency.
High avalanche ruggedness	377 mJ single-pulse rating allows safe operation in inductive load switching without external snubbers in motor phase-leg designs.
Enhancement-mode V_th	2.0–3.0 V threshold ensures predictable turn-on behavior with common 3.3 V microcontrollers and avoids unintended conduction during power-up.
Low Q_gd/Q_g ratio	24 nC/103 nC ratio improves hard-switching efficiency and reduces gate driver power consumption in high-frequency SMPS applications.

Applications

Automotive EPS	Industrial DC-DC Converter
Use Scenario: Electric power steering motor phase-leg switching in 12 V/24 V vehicle architectures. IC Role / Device Role / Timing Role: High-side/low-side N-channel MOSFET in three-phase inverter bridge, switching at 10–20 kHz with precise PWM timing. Use Value: 1.25 mΩ R_DS(ON) reduces I²R losses by >30% vs. legacy 2.5 mΩ devices, lowering junction temperature rise and extending system lifetime.	Use Scenario: Primary-side switch in isolated 48 V–12 V bidirectional DC-DC converter for server power distribution. IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in secondary-side synchronous rectification stage, driven with adaptive gate timing. Use Value: 100 A pulsed current rating and 0.73 °C/W thermal resistance enable 95% peak efficiency at 500 W output without forced air cooling.
Motor Drive Inverter	Switching Voltage Regulator
Use Scenario: High-current BLDC motor drive for HVAC blowers and radiator fans in commercial vehicles. IC Role / Device Role / Timing Role: Low-side switching element in 600 W–1 kW inverter stage, commutated at 8–15 kHz with dead-time control. Use Value: AEC-Q101 qualification ensures reliability across –40 °C to +150 °C ambient, meeting ISO 16750-4 vibration and thermal shock requirements.	Use Scenario: Main switching transistor in high-efficiency 40 V input buck regulator powering ADAS camera modules. IC Role / Device Role / Timing Role: Power switch controlled by integrated PWM controller with 100 ns propagation delay and 15 V gate drive capability. Use Value: 40 V V_DSS provides 2× safety margin over 12 V nominal supply, eliminating need for external clamping in load-dump transients.

Automotive EPS

Industrial DC-DC Converter

Use Scenario: Electric power steering motor phase-leg switching in 12 V/24 V vehicle architectures.

IC Role / Device Role / Timing Role: High-side/low-side N-channel MOSFET in three-phase inverter bridge, switching at 10–20 kHz with precise PWM timing.

Use Value: 1.25 mΩ R_DS(ON) reduces I²R losses by >30% vs. legacy 2.5 mΩ devices, lowering junction temperature rise and extending system lifetime.

Use Scenario: Primary-side switch in isolated 48 V–12 V bidirectional DC-DC converter for server power distribution.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in secondary-side synchronous rectification stage, driven with adaptive gate timing.

Use Value: 100 A pulsed current rating and 0.73 °C/W thermal resistance enable 95% peak efficiency at 500 W output without forced air cooling.

Motor Drive Inverter

Switching Voltage Regulator

Use Scenario: High-current BLDC motor drive for HVAC blowers and radiator fans in commercial vehicles.

IC Role / Device Role / Timing Role: Low-side switching element in 600 W–1 kW inverter stage, commutated at 8–15 kHz with dead-time control.

Use Value: AEC-Q101 qualification ensures reliability across –40 °C to +150 °C ambient, meeting ISO 16750-4 vibration and thermal shock requirements.

Use Scenario: Main switching transistor in high-efficiency 40 V input buck regulator powering ADAS camera modules.

IC Role / Device Role / Timing Role: Power switch controlled by integrated PWM controller with 100 ns propagation delay and 15 V gate drive capability.

Use Value: 40 V V_DSS provides 2× safety margin over 12 V nominal supply, eliminating need for external clamping in load-dump transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	40 V, 220 A, R_DS(ON) = 1.15 mΩ (typ.), DFN8 5×6 mm package, no AEC-Q101 certification	Higher current rating but smaller footprint; unsuitable for automotive qualification-critical designs	Select when board space is constrained and AEC-Q101 is not required; verify thermal performance with 0.95 °C/W R_th(j-a).
IRF1404ZPBF	40 V, 180 A, R_DS(ON) = 3.5 mΩ (typ.), TO-220AB package, non-automotive grade	Larger through-hole package; higher conduction loss increases thermal stress in high-duty-cycle motor drives	Choose only for cost-sensitive industrial prototypes where D2PAK+ reflow assembly is unavailable; derate current by 35%.

Compared with STL220N4F7AG and IRF1404ZPBF, TK1R5R04PB offers the optimal balance of AEC-Q101 compliance, ultra-low R_DS(ON), and thermally enhanced D2PAK+ packaging-making it the preferred choice for production-grade automotive motor control and high-efficiency DC-DC conversion where reliability and thermal performance are non-negotiable.

Availability

TK1R5R04PB is available at Aetrix Electronics and suitable for automotive EPS systems, industrial DC-DC converters, and switching voltage regulators requiring stable component supply, long-term lifecycle support, and traceable sourcing for Tier-1 OEM programs.

Supply support for TK1R5R04PB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a global semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with core expertise in trench-gate MOSFET process technology and automotive-grade reliability validation.

The TK1R5R04PB belongs to Toshiba's U-MOSⅣ-H series of high-current N-channel MOSFETs, engineered specifically for demanding automotive and industrial power conversion applications where low conduction loss, high avalanche energy, and AEC-Q101 compliance are mandatory design requirements.

FAQ

What is the maximum continuous drain current rating for TK1R5R04PB?

The TK1R5R04PB is rated for 160 A DC drain current at T_c = 25 °C. This rating assumes proper heatsinking via the exposed drain pad and is limited by thermal resistance (R_th(ch-c) = 0.73 °C/W). At elevated case temperatures, the current must be derated per the Safe Operating Area curve in the TK1R5R04PB datasheet Figure 9.14.

Is TK1R5R04PB suitable for automotive applications?

Yes, TK1R5R04PB is AEC-Q101 qualified and explicitly designed for automotive use cases including electric power steering, HVAC blowers, and body control modules. Its qualification covers temperature cycling, humidity bias, and mechanical shock testing per JESD22 standards, and it operates reliably from –40 °C to +175 °C channel temperature.

What package type does TK1R5R04PB use, and how is thermal management implemented?

TK1R5R04PB uses the D2PAK+ (TOSHIBA 2-10W2A) surface-mount package with an exposed drain pad on the bottom side. Thermal management relies on soldering this pad directly to a large copper area or external heatsink, achieving 0.73 °C/W channel-to-case thermal resistance-critical for sustaining 160 A DC current without exceeding 175 °C junction temperature.

Does TK1R5R04PB have an integrated body diode, and what are its reverse recovery characteristics?

Yes, TK1R5R04PB includes an integrated body diode with reverse recovery time (t_rr) of 100 ns (typ.) and reverse recovery charge (Q_rr) of 100 nC (typ.) at I_DR = 160 A and –dI_DR/dt = 50 A/µs. These values support efficient synchronous rectification in buck converters but require careful gate timing to avoid shoot-through in half-bridge topologies.

What is the gate threshold voltage range for TK1R5R04PB, and how does it affect drive circuit design?

The TK1R5R04PB has a gate threshold voltage (V_th) range of 2.0–3.0 V at V_DS = 10 V and I_D = 0.5 mA. This allows direct drive from 3.3 V microcontrollers but mandates ≥10 V gate drive for full enhancement and minimal R_DS(ON). Gate driver selection must deliver ≥103 nC total charge with low impedance to ensure fast, low-loss switching.

TK1R5R04PB,LXGQ Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSIX-H

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 160A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 1.5mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 3V @ 500µA

Gate Charge (Qg) (Max) @ Vgs:: 103 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5500 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 205W (Tc)

Operating Temperature:: 175°C

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK+

TK1R5R04PB,LXGQ FAQ

1.How can I place an order for TK1R5R04PB,LXGQ through Aetrix?

Please submit a Request for Quotation (RFQ) for TK1R5R04PB,LXGQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK1R5R04PB,LXGQ reliable?

The price and inventory of TK1R5R04PB,LXGQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK1R5R04PB,LXGQ is usually 5 days.

3.What payment methods are accepted for TK1R5R04PB,LXGQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK1R5R04PB,LXGQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK1R5R04PB,LXGQ?

TK1R5R04PB,LXGQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK1R5R04PB,LXGQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK1R5R04PB,LXGQ?

For technical support, including TK1R5R04PB,LXGQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK1R5R04PB,LXGQ requirements.

6.How does Aetrix verify that TK1R5R04PB,LXGQ is sourced from the original manufacturer or authorized distributors?

All TK1R5R04PB,LXGQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK1R5R04PB,LXGQ meets industry standards.

7.What is the process for return or replacement of TK1R5R04PB,LXGQ?

All TK1R5R04PB,LXGQ units undergo pre-shipment inspection (PSI). If there is an issue with TK1R5R04PB,LXGQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK1R5R04PB,LXGQ part is unused and in its original packaging.

Return procedure for TK1R5R04PB,LXGQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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